1
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Ren H, Lai YA, Channa S, O’Mahoney DA, Zheng XY, Suzuki Y, Kent AD. Electrical Detection of Spin-Hall-Induced Auto-oscillations in Lithium Aluminate Ferrite Thin Films. NANO LETTERS 2025; 25:6399-6404. [PMID: 40209177 PMCID: PMC12023014 DOI: 10.1021/acs.nanolett.4c06305] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/09/2024] [Revised: 03/31/2025] [Accepted: 04/02/2025] [Indexed: 04/12/2025]
Abstract
Ferrimagnetic insulators with ultralow damping are of great interest for their potential applications in energy-efficient computing devices. Here, we report the direct electrical detection of magnetic auto-oscillations in unpatterned ultralow damping ferrimagnetic insulator epitaxial Li0.5Al0.5Fe2O4 thin films, driven by a current in a proximal Pt nanowire. Auto-oscillations occur for only one current polarity, consistent with the spin-Hall effect inducing the oscillation state. Micromagnetic modeling shows good agreement with the experimental frequency and field dispersions, showing only one dominant oscillation mode, in contrast to the multiple modes typically observed in transition-metal nanowire-type spin-Hall nanooscillators. This study illustrates a new material system for neuromorphic computing and magnonics, a simple material platform with the direct-current generation of high-frequency (∼10 GHz) signals and their electrical detection.
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Affiliation(s)
- Haowen Ren
- Center
for Quantum Phenomena, Department of Physics, New York University, New York, New York 10003, United States
| | - Ya-An Lai
- Center
for Quantum Phenomena, Department of Physics, New York University, New York, New York 10003, United States
| | - Sanyum Channa
- Department
of Physics, Stanford University, Stanford, California 94305, United States
- Geballe
Laboratory for Advanced Materials, Stanford
University, Stanford, California 94305, United States
| | - Daisy A. O’Mahoney
- Geballe
Laboratory for Advanced Materials, Stanford
University, Stanford, California 94305, United States
- Department
of Materials Science and Engineering, Stanford
University, Stanford, California 94305, United States
| | - Xin Yu Zheng
- Geballe
Laboratory for Advanced Materials, Stanford
University, Stanford, California 94305, United States
- Department
of Applied Physics, Stanford University, Stanford, California 94305, United States
| | - Yuri Suzuki
- Geballe
Laboratory for Advanced Materials, Stanford
University, Stanford, California 94305, United States
- Department
of Applied Physics, Stanford University, Stanford, California 94305, United States
| | - Andrew D. Kent
- Center
for Quantum Phenomena, Department of Physics, New York University, New York, New York 10003, United States
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2
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Luo B, Velvaluri P, Liu Y, Sun NX. Magnetoelectric BAW and SAW Devices: A Review. MICROMACHINES 2024; 15:1471. [PMID: 39770224 PMCID: PMC11677952 DOI: 10.3390/mi15121471] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/01/2024] [Revised: 11/21/2024] [Accepted: 11/21/2024] [Indexed: 01/11/2025]
Abstract
Magnetoelectric (ME) devices combining piezoelectric and magnetostrictive materials have emerged as powerful tools to miniaturize and enhance sensing and communication technologies. This paper examines recent developments in bulk acoustic wave (BAW) and surface acoustic wave (SAW) ME devices, which demonstrate unique capabilities in ultra-sensitive magnetic sensing, compact antennas, and quantum applications. Leveraging the mechanical resonance of BAW and SAW modes, ME sensors achieve the femto- to pico-Tesla sensitivity ideal for biomedical applications, while ME antennas, operating at acoustic resonance, allow significant size reduction, with high radiation gain and efficiency, which is suited for bandwidth-restricted applications. In addition, ME non-reciprocal magnetoacoustic devices using hybrid magnetoacoustic waves present novel solutions for RF isolation, which have also shown potential for the efficient control of quantum defects, such as negatively charged nitrogen-vacancy (NV-) centers. Continued advancements in materials and device structures are expected to further enhance ME device performance, positioning them as key components in future bio-sensing, wireless communication, and quantum information technologies.
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Affiliation(s)
| | | | | | - Nian-Xiang Sun
- Electrical and Computer Engineering Department, Northeastern University, Boston, MA 02115, USA; (B.L.); (P.V.); (Y.L.)
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3
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Cheng J, Yu R, Sun L, He K, Ji T, Yang M, Zhang Z, Hu X, Niu H, Yang X, Chen P, Chen G, Xiao J, Huang F, Lu X, Cai H, Yuan H, Miao B, Ding H. A nonvolatile magnon field effect transistor at room temperature. Nat Commun 2024; 15:9314. [PMID: 39472444 PMCID: PMC11522597 DOI: 10.1038/s41467-024-53524-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/03/2023] [Accepted: 10/14/2024] [Indexed: 11/02/2024] Open
Abstract
Information industry is one of the major drivers of the world economy. Its rapid growth, however, leads to severe heat problem which strongly hinders further development. This calls for a non-charge-based technology. Magnon, capable of transmitting spin information without electron movement, holds tremendous potential in post-Moore era. Given the cornerstone role of the field effect transistor in modern electronics, creating its magnonic equivalent is highly desired but remains a challenge. Here, we demonstrate a nonvolatile three-terminal lateral magnon field effect transistor operating at room temperature. The device consists of a ferrimagnetic insulator (Y3Fe5O12) deposited on a ferroelectric material [Pb(Mg1/3Nb2/3)0.7Ti0.3O3 or Pb(Zr0.52Ti0.48)O3], with three Pt stripes patterned on Y3Fe5O12 as the injector, gate, and detector, respectively. The magnon transport in Y3Fe5O12 can be regulated by the gate voltage pulses in a nonvolatile manner with a high on/off ratio. Our findings provide a solid foundation for designing energy-efficient magnon-based devices.
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Affiliation(s)
- Jun Cheng
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, and Collaborative Innovation Center of Advanced Microstructures, Nanjing, 210093, PR China
| | - Rui Yu
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, and Collaborative Innovation Center of Advanced Microstructures, Nanjing, 210093, PR China
- Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai, 201204, PR China
| | - Liang Sun
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, and Collaborative Innovation Center of Advanced Microstructures, Nanjing, 210093, PR China
| | - Kang He
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, and Collaborative Innovation Center of Advanced Microstructures, Nanjing, 210093, PR China
| | - Tongzhou Ji
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, and Collaborative Innovation Center of Advanced Microstructures, Nanjing, 210093, PR China
| | - Man Yang
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, and Collaborative Innovation Center of Advanced Microstructures, Nanjing, 210093, PR China
| | - Zeyuan Zhang
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, and Collaborative Innovation Center of Advanced Microstructures, Nanjing, 210093, PR China
| | - Xueli Hu
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, and Collaborative Innovation Center of Advanced Microstructures, Nanjing, 210093, PR China
| | - Heng Niu
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, and Collaborative Innovation Center of Advanced Microstructures, Nanjing, 210093, PR China
| | - Xi Yang
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, and Collaborative Innovation Center of Advanced Microstructures, Nanjing, 210093, PR China
| | - Peng Chen
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, and Collaborative Innovation Center of Advanced Microstructures, Nanjing, 210093, PR China
| | - Gong Chen
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, and Collaborative Innovation Center of Advanced Microstructures, Nanjing, 210093, PR China
| | - Jiang Xiao
- Department of Physics, Fudan University, Shanghai, 200433, PR China
| | - Fengzhen Huang
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, and Collaborative Innovation Center of Advanced Microstructures, Nanjing, 210093, PR China
| | - Xiaomei Lu
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, and Collaborative Innovation Center of Advanced Microstructures, Nanjing, 210093, PR China
| | - Hongling Cai
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, and Collaborative Innovation Center of Advanced Microstructures, Nanjing, 210093, PR China
| | - Huaiyang Yuan
- Institute for Advanced Study in Physics, Zhejiang University, 310027, Hangzhou, PR China.
| | - Bingfeng Miao
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, and Collaborative Innovation Center of Advanced Microstructures, Nanjing, 210093, PR China.
| | - Haifeng Ding
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, and Collaborative Innovation Center of Advanced Microstructures, Nanjing, 210093, PR China.
- Shishan Laboratory, Suzhou Campus of Nanjing University, Suzhou, 215000, PR China.
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4
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Gaur SS, Marinero EE. Emergent Magnonic Materials: Challenges and Opportunities. MATERIALS (BASEL, SWITZERLAND) 2023; 16:6299. [PMID: 37763576 PMCID: PMC10533023 DOI: 10.3390/ma16186299] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/04/2023] [Revised: 09/11/2023] [Accepted: 09/16/2023] [Indexed: 09/29/2023]
Abstract
Advances in information technology are hindered by energy dissipation from Joule losses associated with charge transport. In contrast, the process of information based on spin waves propagation (magnons) in magnetic materials is dissipationless. Low damping of spin wave excitations is essential to control the propagation length of magnons. Ferrimagnetic Y3Fe5O12 garnets (YIG) exhibit the lowest magnetic damping constants. However, to attain the lowest damping constant, epitaxial growth of YIG on single crystal substrates of Gd3Ga5O12 at elevated temperatures is required, which hinders their CMOS integration in electronic devices. Furthermore, their low saturation magnetization and magnetocrystalline anisotropy are challenging for nanoscale device applications. In the search for alternative material systems, polycrystalline ferromagnetic Co25Fe75 alloy films and ferrimagnetic spinel ferrites, such as MgAl0.5Fe1.5O4 (MAFO), have emerged as potential candidates. Their damping constants are comparable, although they are at least one order of magnitude higher than YIG's. However, Co25Fe75 alloy thin film growth is CMOS compatible, and its magnon diffusion length is 20× longer than in MAFO. In addition, MAFO requires epitaxial growth on lattice-matched MgAl2O4 substrates. We discuss the material properties that control the Gilbert damping constant in CoxFe1-x alloys and MAFO and conclude that CoxFe1-x alloy thin films bring us closer to the realization of the exploitation of spin waves for magnonics.
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Affiliation(s)
| | - Ernesto E. Marinero
- School of Materials Engineering, Purdue University, West Lafayette, IN 47907, USA
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5
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Qi S, Chen D, Chen K, Liu J, Chen G, Luo B, Cui H, Jia L, Li J, Huang M, Song Y, Han S, Tong L, Yu P, Liu Y, Wu H, Wu S, Xiao J, Shindou R, Xie XC, Chen JH. Giant electrically tunable magnon transport anisotropy in a van der Waals antiferromagnetic insulator. Nat Commun 2023; 14:2526. [PMID: 37130859 PMCID: PMC10154397 DOI: 10.1038/s41467-023-38172-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/24/2022] [Accepted: 04/19/2023] [Indexed: 05/04/2023] Open
Abstract
Anisotropy is a manifestation of lowered symmetry in material systems that have profound fundamental and technological implications. For van der Waals magnets, the two-dimensional (2D) nature greatly enhances the effect of in-plane anisotropy. However, electrical manipulation of such anisotropy as well as demonstration of possible applications remains elusive. In particular, in-situ electrical modulation of anisotropy in spin transport, vital for spintronics applications, has yet to be achieved. Here, we realized giant electrically tunable anisotropy in the transport of second harmonic thermal magnons (SHM) in van der Waals anti-ferromagnetic insulator CrPS4 with the application of modest gate current. Theoretical modeling found that 2D anisotropic spin Seebeck effect is the key to the electrical tunability. Making use of such large and tunable anisotropy, we demonstrated multi-bit read-only memories (ROMs) where information is inscribed by the anisotropy of magnon transport in CrPS4. Our result unveils the potential of anisotropic van der Waals magnons for information storage and processing.
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Affiliation(s)
- Shaomian Qi
- International Center of Quantum Materials, School of Physics, Peking University, Beijing, China
| | - Di Chen
- Beijing Academy of Quantum Information Sciences, Beijing, China
| | - Kangyao Chen
- International Center of Quantum Materials, School of Physics, Peking University, Beijing, China
| | - Jianqiao Liu
- International Center of Quantum Materials, School of Physics, Peking University, Beijing, China
| | - Guangyi Chen
- International Center of Quantum Materials, School of Physics, Peking University, Beijing, China
| | - Bingcheng Luo
- International Center of Quantum Materials, School of Physics, Peking University, Beijing, China
| | - Hang Cui
- International Center of Quantum Materials, School of Physics, Peking University, Beijing, China
| | - Linhao Jia
- International Center of Quantum Materials, School of Physics, Peking University, Beijing, China
- Beijing Academy of Quantum Information Sciences, Beijing, China
| | - Jiankun Li
- Beijing Academy of Quantum Information Sciences, Beijing, China
| | - Miaoling Huang
- Beijing Academy of Quantum Information Sciences, Beijing, China
| | - Yuanjun Song
- Beijing Academy of Quantum Information Sciences, Beijing, China
| | - Shiyi Han
- College of Chemistry and Molecular Engineering, Peking University, Beijing, China
| | - Lianming Tong
- College of Chemistry and Molecular Engineering, Peking University, Beijing, China
| | - Peng Yu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou, China
| | - Yi Liu
- Center for Advanced Quantum Studies and Department of Physics, Beijing Normal University, Beijing, China
| | - Hongyu Wu
- Key Laboratory of Magnetic Materials and Devices, Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, China
| | - Shiwei Wu
- Department of Physics and State Key Laboratory of Surface Physics, Fudan University, Shanghai, China
| | - Jiang Xiao
- Department of Physics and State Key Laboratory of Surface Physics, Fudan University, Shanghai, China
| | - Ryuichi Shindou
- International Center of Quantum Materials, School of Physics, Peking University, Beijing, China
| | - X C Xie
- International Center of Quantum Materials, School of Physics, Peking University, Beijing, China
- Hefei National Laboratory, Hefei, China
| | - Jian-Hao Chen
- International Center of Quantum Materials, School of Physics, Peking University, Beijing, China.
- Beijing Academy of Quantum Information Sciences, Beijing, China.
- Hefei National Laboratory, Hefei, China.
- Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing, China.
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6
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Li R, Riddiford LJ, Chai Y, Dai M, Zhong H, Li B, Li P, Yi D, Zhang Y, Broadway DA, Dubois AEE, Maletinsky P, Hu J, Suzuki Y, Ralph DC, Nan T. A puzzling insensitivity of magnon spin diffusion to the presence of 180-degree domain walls. Nat Commun 2023; 14:2393. [PMID: 37100786 PMCID: PMC10133301 DOI: 10.1038/s41467-023-38095-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/19/2022] [Accepted: 04/14/2023] [Indexed: 04/28/2023] Open
Abstract
We present room-temperature measurements of magnon spin diffusion in epitaxial ferrimagnetic insulator MgAl0.5Fe1.5O4 (MAFO) thin films near zero applied magnetic field where the sample forms a multi-domain state. Due to a weak uniaxial magnetic anisotropy, the domains are separated primarily by 180° domain walls. We find, surprisingly, that the presence of the domain walls has very little effect on the spin diffusion - nonlocal spin transport signals in the multi-domain state retain at least 95% of the maximum signal strength measured for the spatially-uniform magnetic state, over distances at least five times the typical domain size. This result is in conflict with simple models of interactions between magnons and static domain walls, which predict that the spin polarization carried by the magnons reverses upon passage through a 180° domain wall.
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Affiliation(s)
- Ruofan Li
- Laboratory of Atomic and Solid-State Physics, Cornell University, Ithaca, NY, 14853, USA
| | - Lauren J Riddiford
- Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA, 94305, USA
| | - Yahong Chai
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, 100084, Beijing, China
| | - Minyi Dai
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA
| | - Hai Zhong
- Qnami AG, CH-4132, Muttenz, Switzerland
| | - Bo Li
- Institute for Advanced Study, Tsinghua University, 100084, Beijing, China
| | - Peng Li
- Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA, 94305, USA
| | - Di Yi
- Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA, 94305, USA
- State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Yuejie Zhang
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, 100084, Beijing, China
| | - David A Broadway
- Department of Physics, University of Basel, CH-4056, Basel, Switzerland
| | - Adrien E E Dubois
- Qnami AG, CH-4132, Muttenz, Switzerland
- Department of Physics, University of Basel, CH-4056, Basel, Switzerland
| | - Patrick Maletinsky
- Qnami AG, CH-4132, Muttenz, Switzerland
- Department of Physics, University of Basel, CH-4056, Basel, Switzerland
| | - Jiamian Hu
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA
| | - Yuri Suzuki
- Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA, 94305, USA
- Department of Applied Physics, Stanford University, Stanford, CA, 94305, USA
| | - Daniel C Ralph
- Laboratory of Atomic and Solid-State Physics, Cornell University, Ithaca, NY, 14853, USA.
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY, 14853, USA.
| | - Tianxiang Nan
- Laboratory of Atomic and Solid-State Physics, Cornell University, Ithaca, NY, 14853, USA.
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, 100084, Beijing, China.
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7
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Das S, Ross A, Ma XX, Becker S, Schmitt C, van Duijn F, Galindez-Ruales EF, Fuhrmann F, Syskaki MA, Ebels U, Baltz V, Barra AL, Chen HY, Jakob G, Cao SX, Sinova J, Gomonay O, Lebrun R, Kläui M. Anisotropic long-range spin transport in canted antiferromagnetic orthoferrite YFeO 3. Nat Commun 2022; 13:6140. [PMID: 36253357 PMCID: PMC9576681 DOI: 10.1038/s41467-022-33520-5] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/13/2021] [Accepted: 09/07/2022] [Indexed: 11/09/2022] Open
Abstract
In antiferromagnets, the efficient transport of spin-waves has until now only been observed in the insulating antiferromagnet hematite, where circularly (or a superposition of pairs of linearly) polarized spin-waves diffuse over long distances. Here, we report long-distance spin-transport in the antiferromagnetic orthoferrite YFeO3, where a different transport mechanism is enabled by the combined presence of the Dzyaloshinskii-Moriya interaction and externally applied fields. The magnon decay length is shown to exceed hundreds of nanometers, in line with resonance measurements that highlight the low magnetic damping. We observe a strong anisotropy in the magnon decay lengths that we can attribute to the role of the magnon group velocity in the transport of spin-waves in antiferromagnets. This unique mode of transport identified in YFeO3 opens up the possibility of a large and technologically relevant class of materials, i.e., canted antiferromagnets, for long-distance spin transport.
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Affiliation(s)
- Shubhankar Das
- Institute of Physics, Johannes Gutenberg University Mainz, Staudingerweg 7, 55128, Mainz, Germany
| | - A Ross
- Unité Mixte de Physique CNRS, Thales, Université Paris-Saclay, Palaiseau, 91767, France
| | - X X Ma
- Department of Physics, Materials Genome Institute, International Center for Quantum and Molecular Structures, Shanghai University, Shanghai, 200444, China
| | - S Becker
- Institute of Physics, Johannes Gutenberg University Mainz, Staudingerweg 7, 55128, Mainz, Germany
| | - C Schmitt
- Institute of Physics, Johannes Gutenberg University Mainz, Staudingerweg 7, 55128, Mainz, Germany
| | - F van Duijn
- Univ. Grenoble Alpes, CNRS, CEA, Grenoble INP, SPINTEC, F-38000, Grenoble, France
- Laboratoire National des Champs Magnétiques Intenses, CNRS-UGA-UPS-INSA-EMFL, F-38042, Grenoble, France
| | - E F Galindez-Ruales
- Institute of Physics, Johannes Gutenberg University Mainz, Staudingerweg 7, 55128, Mainz, Germany
| | - F Fuhrmann
- Institute of Physics, Johannes Gutenberg University Mainz, Staudingerweg 7, 55128, Mainz, Germany
| | - M-A Syskaki
- Institute of Physics, Johannes Gutenberg University Mainz, Staudingerweg 7, 55128, Mainz, Germany
| | - U Ebels
- Univ. Grenoble Alpes, CNRS, CEA, Grenoble INP, SPINTEC, F-38000, Grenoble, France
| | - V Baltz
- Univ. Grenoble Alpes, CNRS, CEA, Grenoble INP, SPINTEC, F-38000, Grenoble, France
| | - A-L Barra
- Laboratoire National des Champs Magnétiques Intenses, CNRS-UGA-UPS-INSA-EMFL, F-38042, Grenoble, France
| | - H Y Chen
- Department of Physics, Materials Genome Institute, International Center for Quantum and Molecular Structures, Shanghai University, Shanghai, 200444, China
| | - G Jakob
- Institute of Physics, Johannes Gutenberg University Mainz, Staudingerweg 7, 55128, Mainz, Germany
- Graduate School of Excellence Materials Science in Mainz, Staudingerweg 9, 55128, Mainz, Germany
| | - S X Cao
- Department of Physics, Materials Genome Institute, International Center for Quantum and Molecular Structures, Shanghai University, Shanghai, 200444, China.
| | - J Sinova
- Institute of Physics, Johannes Gutenberg University Mainz, Staudingerweg 7, 55128, Mainz, Germany
| | - O Gomonay
- Institute of Physics, Johannes Gutenberg University Mainz, Staudingerweg 7, 55128, Mainz, Germany
| | - R Lebrun
- Unité Mixte de Physique CNRS, Thales, Université Paris-Saclay, Palaiseau, 91767, France
| | - M Kläui
- Institute of Physics, Johannes Gutenberg University Mainz, Staudingerweg 7, 55128, Mainz, Germany.
- Graduate School of Excellence Materials Science in Mainz, Staudingerweg 9, 55128, Mainz, Germany.
- Center for Quantum Spintronics, Norwegian University of Science and Technology, Trondheim, 7491, Norway.
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