Nanoscale Control of One-Dimensional Confined States in Strongly Correlated Homojunctions

Nanoscale island manipulation and construction of heterojunctions by mechanical collision of 2D materials

Controllable phase transitions between distinct polymorphs in transition metal dichalcogenides (TMDs) hold great significance for applications in nanoscale electronics. Currently, constructing nanoscale heterojunctions with the desired TMD phase remains challenging due to insufficient control. In this study, we provided a new strategy of phase transitions by controllable mechanical collision of TMD islands containing over thousands of atoms. Using an in situ scanning tunneling microscopy (STM) tip manipulation technique, we can precisely control the fixed-axis rotation of nanoscale NbSe2 islands. Through mechanically colliding T- and H-NbSe2 with each other, we successfully triggered a phase transition from Mott insulator T-NbSe2 to semi-metal H-NbSe2, thereby creating a high-quality heterojunction. We further unveiled the unusual electronic properties of this heterojunction, and provided new insights into the phase transition mechanisms in TMDs and their potential applications in nanoscale electronics.

Realization of fractional-layer transition metal dichalcogenides

Layered van der Waals transition metal dichalcogenides (TMDCs), generally composed of three atomic X-M-X planes in each layer (M = transition metal, X = chalcogen), provide versatile platforms for exploring diverse quantum phenomena. In each MX2 layer, the M-X bonds are predominantly covalent in nature and, as a result, the cleavage of TMDC crystals normally occurs between the layers. Here we report the controllable realization of fractional-layer WTe2 via an in-situ scanning tunneling microscopy (STM) tip manipulation technique. By applying STM tip pulses, hundreds of the topmost Te atoms are removed to form a nanoscale monolayer Te pit in the 1 T'-WTe2, thus realizing a 2/3-layer WTe2 film. Such a configuration undergoes a spontaneous atomic reconstruction, yielding a unidirectional charge density redistribution with the wavevector and geometry quite distinct from that of pristine 1 T'-WTe2. Our results expand the conventional understanding of the TMDCs and are expected to stimulate further research on the structure and properties of fractional-layer TMDCs.

Multiple Electronic Phases Coexisting under Inhomogeneous Strains in the Correlated Insulator

Monolayer transition metal dichalcogenides (TMDs) can host exotic phenomena such as correlated insulating and charge-density-wave (CDW) phases. Such properties are strongly dependent on the precise atomic arrangements. Strain, as an effective tuning parameter in atomic arrangements, has been widely used for tailoring material's structures and related properties, yet to date, a convincing demonstration of strain-induced dedicate phase transition at nanometer scale in monolayer TMDs has been lacking. Here, a strain engineering technique is developed to controllably introduce out-of-plane atomic deformations in monolayer CDW material 1T-NbSe₂ . The scanning tunneling microscopy and spectroscopy (STM and STS) measurements, accompanied by first-principles calculations, demonstrate that the CDW phase of 1T-NbSe₂ can survive under both tensile and compressive strains even up to 5%. Moreover, significant strain-induced phase transitions are observed, i.e., tensile (compressive) strains can drive 1T-NbSe₂ from an intrinsic-correlated insulator into a band insulator (metal). Furthermore, experimental evidence of the multiple electronic phase coexistence at the nanoscale is provided. The results shed new lights on the strain engineering of correlated insulator and useful for design and development of strain-related nanodevices.

Ullmann-Like Covalent Bond Coupling without Participation of Metal Atoms

Ullmann-like on-surface synthesis is one of the most appropriate approaches for the bottom-up fabrication of covalent organic nanostructures and many successes have been achieved. The Ullmann reaction requires the oxidative addition of a catalyst (a metal atom in most cases): the metal atom will insert into a carbon-halogen bond, forming organometallic intermediates, which are then reductively eliminated and form C-C covalent bonds. As a result, traditional Ullmann coupling involves reactions of multiple steps, making it difficult to control the final product. Moreover, forming the organometallic intermediates will potentially poison the metal surface catalytic reactivity. In the study, we used the 2D hBN, an atomically thin sp²-hybridized sheet with a large band gap, to protect the Rh(111) metal surface. It is an ideal 2D platform to decouple the molecular precursor from the Rh(111) surface while maintaining the reactivity of Rh(111). We realize an Ullmann-like coupling of a planar biphenylene-based molecule, i.e., 1,8-dibromobiphenylene (BPBr₂), on an hBN/Rh(111) surface with an ultrahigh selectivity of the biphenylene dimer product, containing 4-, 6-, and 8-membered rings. The reaction mechanism, including electron wave penetration and the template effect of the hBN, is elucidated by combining low-temperature scanning tunneling microscopy and density functional theory calculations. Our findings are expected to play an essential role regarding the high-yield fabrication of functional nanostructures for future information devices.

Monolayer NbSe2 Favors Ultralow Friction and Super Wear Resistance

The urgent demand for atomically thin, superlubricating, and super wear-resistant materials in micro/nanoelectromechanical systems has stimulated the research of friction-reducing and antiwear materials. However, the fabrication of subnanometer-thick films with superlubricating and super wear-resistant properties under ambient conditions remains a huge challenge. Herein, high-quality monolayer (ML) NbSe₂ (∼0.8 nm) with ultralow friction and super wear resistance in an atmospheric environment was successfully grown by chemical vapor deposition (CVD) for the first time. Moreover, compared with few-layered (FL) NbSe₂, ML NbSe₂ has a lower friction coefficient and better wear resistance. On the basis of density function theory (DFT) calculations, the adhesion and the degree of charge transfer between ML NbSe₂ and the substrate is larger than that of the topmost layer to the underlying layers of NbSe₂ with two or more layers, which can be used to explain that the ML NbSe₂ favors ultralow friction and super wear resistance.

Atomic-scale visualization of chiral charge density wave superlattices and their reversible switching

Chirality is essential for various phenomena in life and matter. However, chirality and its switching in electronic superlattices, such as charge density wave (CDW) superlattices, remain elusive. In this study, we characterize the chirality switching with atom-resolution imaging in a single-layer NbSe₂ CDW superlattice by the technique of scanning tunneling microscopy. The atomic arrangement of the CDW superlattice is found continuous and intact although its chirality is switched. Several intermediate states are tracked by time-resolved imaging, revealing the fast and dynamic chirality transition. Importantly, the switching is reversibly realized with an external electric field. Our findings unveil the delicate switching process of chiral CDW superlattice in a two-dimensional (2D) crystal down to the atomic scale.

Size Dependence of Charge-Density-Wave Orders in Single-Layer NbSe2 Hetero/Homophase Junctions

Controlling charge-density-wave (CDW) orders in two-dimensional (2D) crystals has attracted a great deal of interest because of their fundamental physics and their demand inse in miniaturized devices. In this work, we systematically studied the size-dependent CDW orders in single-layer hetero/homo-NbSe₂ stacking junctions. We found that the CDW orders in the top 1T-NbSe₂ layer of the junctions are highly dependent on its lateral size. For the 1T/2H-NbSe₂ heterojunction, the critical lateral size of 1T-NbSe₂ islands for the formation of well-defined CDW orders is ∼26 nm, whereas below 15 nm, the CDW orders melt. However, for the 1T/1T-NbSe₂ homojunction, the CDW orders in the islands can persist even with a lateral size of <11 nm. Our findings illuminate the fresh phenomenon of size-dependent CDW orders existing in 2D van der Waals hetero/homojunctions and provide useful information for the control of CDW orders.