All Optical Switching through Anistropic Gain of CsPbBr3 Single Crystal Microplatelet

Room-Temperature Lasing at Flatband Bound States in the Continuum

High-quality factor optical modes with a low dispersion in the momentum space are highly desirable for applications such as low-threshold lasers, strong light-matter interactions, and optical trapping. Bound states in the continuum (BICs) have recently gained attention as a promising optical cavity concept due to their theoretically infinite quality factors. However, their quality factor decreases exponentially when deviating from the BIC singularity in the momentum space, which limits their practical use. Here, we present a design concept and experimental realization of flatband BICs in a rectangular array of titanium dioxide nanopillars. By precisely engineering the interaction between four counterpropagating guided modes in the array, a nondispersive BIC band can be obtained. The flatband BIC exhibits an enhanced quality factor near the Γ-point by 2 orders of magnitude compared to that of the symmetry-protected BIC mode in a square array, along with an exceptionally high optical density of states. As a result, we achieve room-temperature lasing at the flatband BIC with a quality factor of ∼9100 and a threshold 4 times lower than that of the symmetry-protected BIC. The flatband-BIC lasing properties, such as directionality and topological charge, are also studied in detail. The concept and outstanding lasing performance of the flatband BICs presented in our work mark an important step toward efficient optical cavities and microlasers and hold great potential for advanced photonic and optoelectronic devices.

Optimizing Lasing Performance of CsPbBr3 Microplates by Regulating Exciton Recombination Dynamics with Pressure

This study aims to achieve an ultralow lasing threshold in CsPbBr3 microplates (MPs), a crucial step toward developing electrically driven micro/nanolasers for optics integrated chips. We investigate the lasing behavior of CsPbBr3 MPs under varying pressures by using static-state photoluminescence (PL), time-resolved PL (TRPL), and first-principles theory calculations based on density functional theory (DFT). Our results reveal that the lasing threshold initially decreases and then increases, with a critical turning point at 0.44 GPa. Notably, we achieve an optimal lasing threshold of 20.87 μJ/cm2 after releasing pressure from 1.87 GPa, highlighting the potential of pressure modulation to optimize the lasing performance. At low pressure, pressure-induced phonon hardening enhances the barrier, preventing excitons decay from free states to trapping states. Conversely, at higher pressure, the increased density of surface defects, due to pressure-induced anisotropic contraction of lattice constants along the c-axis, leads to excitons decay from free states to trapping states. For CsPbBr3 MPs, it is evident that only free excitons contribute to lasing, while both free and trapped excitons contribute to luminescence. These findings offer a novel strategy to optimize the lasing performance of perovskite micro/nanolasers, significantly advancing their potential for practical applications in optoelectronic devices.

The Photophysics of Perovskite Emitters: from Ensemble to Single Particle

Halide perovskite emitters are a groundbreaking class of optoelectronic materials possessing remarkable photophysical properties for diverse applications. In perovskite light emitting devices, they have achieved external quantum efficiencies exceeding 28%, showcasing their potential for next-generation solid-state lighting and ultra high definition displays. Furthermore, the demonstration of room temperature continuous-wave perovskite lasing underscores their potential for integrated optoelectronics. Of late, perovskite emitters are also found to exhibit desirable single-photon emission characteristics as well as superfluorescence or superradiance phenomena for quantum optics. With progressive advances in synthesis, surface engineering, and encapsulation, halide perovskite emitters are poised to become key components in quantum optical technologies. Understanding the underpinning photophysical mechanisms is crucial for engineering these novel emergent quantum materials. This review aims to provide a condensed overview of the current state of halide perovskite emitter research covering both established and fledging applications, distill the underlying mechanisms, and offer insights into future directions for this rapidly evolving field.

Ultracompact and Uniform Nanoemitter Array Based on Periodic Scattering

As emerging gain materials, lead halide perovskites have drawn considerable attention in coherent light sources. With the development of patterning and integration techniques, a perovskite laser array has been realized by distributing perovskite microcrystals periodically. Nevertheless, the packing density is limited by the crystal size and the channel gap distance. More importantly, the lasing performance for individual laser units is quite random due to variation of size and crystal quality. Herein an ultracompact perovskite nanoemitter array with uniform emission has been demonstrated. Individual emitters are formed via scattering evanescent components from a shared Fabry-Perot laser, ensuring uniform lasing emission in a unit cell with a side length of 160 nm and lattice constant of 400 nm. And the periodic silicon scatterers do not deteriorate the lasing threshold dramatically. In addition, the surface emitting efficiency increased significantly. The direct integration of a densely packed nanoemitter array with a silicon platform promises high-throughput sensing and high-capacity optical interconnects.

Photophysical Properties of Submicrometer Ultrathin Perovskite Single-Crystal Films

Organic-inorganic hybrid perovskite (OIHP) has attracted a great deal of interest with respect to diverse optoelectronic devices. However, the photophysical properties of the OIHP require further understanding because most of the investigations have been conducted with polycrystalline perovskites, which contain high-density structural defects. Here, diverse photophysical properties, including structural characterization, spectroscopic features, and photoexcited products, are studied in submicrometer CH3NH3PbBr3 ultrathin single-crystal (UTSC) films. Unlike polycrystalline films and large single crystals, the UTSC film provides a unique platform for studying spectroscopic characteristics of single-crystal perovskites. Compared with the polycrystalline film, the UTSC film presents an atomically flat morphology and near-perfect lattice with a lower defect density, leading to an isotropic system that can be applied in the construction of high-performance optoelectronic devices. Furthermore, a long lifetime emissive channel assigned to the trion is indicated, which is scarcely found in perovskite polycrystalline films. Our results profoundly improve our understanding of their photophysical properties and expand the horizons for perovskite materials in photonic applications.

A Universal Approach Toward Intrinsically Flexible All-Inorganic Perovskite-Gel Composites with Full-Color Luminescence

The combination of all-inorganic perovskites (PVSKs) and polymers allows for free-standing flexible optoelectronic devices. However, solubility difference of the PVSK precursors and concerns over the compatibility between polymer carriers and PVSKs imply a great challenge to incorporate different kinds of PVSKs into polymer matrices by the same manufacturing process. In this work, PVSK precursors are introduced into poly(2-hydroxyethyl acrylate) (PHEA) hydrogels in sequence, in which the PVSK-gel composites are achieved with full-color emissions by simply varying the precursor species. Moreover, it is found that CsBr has a higher interaction energy with the (111) plane of CsPbBr3 than the (110) plane; thus, the CsPbBr3 crystals with a shape of truncated cube and tetragon are observed during the CsPbBr3-Cs4PbBr6 phase transition over time. The PVSK-gel composites feature excellent bendability, elasticity, and stretchable deformation (tensile strain > 500%), which allows for 3D printing emissive customized stereoscopic architectures with shape-memory features.

Facet-selective growth of halide perovskite/2D semiconductor van der Waals heterostructures for improved optical gain and lasing

The tunable properties of halide perovskite/two dimensional (2D) semiconductor mixed-dimensional van der Waals heterostructures offer high flexibility for innovating optoelectronic and photonic devices. However, the general and robust growth of high-quality monocrystalline halide perovskite/2D semiconductor heterostructures with attractive optical properties has remained challenging. Here, we demonstrate a universal van der Waals heteroepitaxy strategy to synthesize a library of facet-specific single-crystalline halide perovskite/2D semiconductor (multi)heterostructures. The obtained heterostructures can be broadly tailored by selecting the coupling layer of interest, and can include perovskites varying from all-inorganic to organic-inorganic hybrid counterparts, individual transition metal dichalcogenides or 2D heterojunctions. The CsPbI2Br/WSe2 heterostructures demonstrate ultrahigh optical gain coefficient, reduced gain threshold and prolonged gain lifetime, which are attributed to the reduced energetic disorder. Accordingly, the self-organized halide perovskite/2D semiconductor heterostructure lasers show highly reproducible single-mode lasing with largely reduced lasing threshold and improved stability. Our findings provide a high-quality and versatile material platform for probing unique optoelectronic and photonic physics and developing further electrically driven on-chip lasers, nanophotonic devices and electronic-photonic integrated systems.

Organic Ligand Engineering for Tailoring Electron-Phonon Coupling in 2D Hybrid Perovskites

In the emerging two-dimensional organic-inorganic hybrid perovskites, the electronic structures and carrier behaviors are strongly impacted by intrinsic electron-phonon interactions, which have received inadequate attention. In this study, we report an intriguing phenomenon of negative carrier diffusion induced by electron-phonon coupling in (2T)2PbI4. Theoretical calculations reveal that the electron-phonon coupling drives the band alignment in (2T)2PbI4 to alternate between type I and type II heterostructures. As a consequence, photoexcited holes undergo transitions between the organic ligands and inorganic layers, resulting in abnormal carrier transport behavior compared to other two-dimensional hybrid perovskites. These findings provide valuable insights into the role of electron-phonon coupling in shaping the band alignments and carrier behaviors in two-dimensional hybrid perovskites. They also open up exciting avenues for designing and fabricating functional semiconductor heterostructures with tailored properties.

Exciton polariton condensation from bound states in the continuum at room temperature

Exciton-polaritons (polaritons) resulting from the strong exciton-photon interaction stimulates the development of novel low-threshold coherent light sources to circumvent the ever-increasing energy demands of optical communications1-3. Polaritons from bound states in the continuum (BICs) are promising for Bose-Einstein condensation owing to their theoretically infinite quality factors, which provide prolonged lifetimes and benefit the polariton accumulations4-7. However, BIC polariton condensation remains limited to cryogenic temperatures ascribed to the small exciton binding energies of conventional material platforms. Herein, we demonstrated room-temperature BIC polariton condensation in perovskite photonic crystal lattices. BIC polariton condensation was demonstrated at the vicinity of the saddle point of polariton dispersion that generates directional vortex beam emission with long-range coherence. We also explore the peculiar switching effect among the miniaturized BIC polariton modes through effective polariton-polariton scattering. Our work paves the way for the practical implementation of BIC polariton condensates for integrated photonic and topological circuits.

Intrinsic Self-Trapped Excitons in Graphitic Carbon Nitride

Graphitic carbon nitrides (g-C3N4) as low-cost, chemically stable, and ecofriendly layered semiconductors have attracted rapidly growing interest in optoelectronics and photocatalysis. However, the nature of photoexcited carriers in g-C3N4 is still controversial, and an independent charge-carrier picture based on the band theory is commonly adopted. Here, by performing transient spectroscopy studies, we show characteristics of self-trapped excitons (STEs) in g-C3N4 nanosheets including broad trapped exciton-induced absorption, picosecond exciton trapping without saturation at high photoexcitation density, and transient STE-induced stimulated emissions. These features, together with the ultrafast exciton trapping polarization memory, strongly suggest that STEs intrinsically define the nature of the photoexcited states in g-C3N4. These observations provide new insights into the fundamental photophysics of carbon nitrides, which may enlighten novel designs to boost energy conversion efficiency.

On-Substrate Fabrication of CsPbBr3 Single-Crystal Microstructures via Nanoparticle Self-Assembly-Assisted Low-Temperature Sintering

The growth of all-inorganic perovskite single-crystal microstructures on substrates is a promising approach for constructing photonic and electronic microdevices. However, current preparation methods typically involve direct control of ions or atoms, which often depends on specific lattice-matched substrates for epitaxial growth and other stringent conditions that limit the mild preparation and flexibility of device integration. Herein, we present the on-substrate fabrication of CsPbBr3 single-crystal microstructures obtained via a nanoparticle self-assembly assisted low-temperature sintering (NSALS) method. Sintering guided by self-assembled atomically oriented superlattice embryos facilitated the formation of single-crystal microstructures under mild conditions without substrate dependence. The as-prepared on-substrate microstructures exhibited a consistent out-of-plane orientation with a carrier lifetime of up to 82.7 ns. Photodetectors fabricated by using these microstructures exhibited an excellent photoresponse of 9.15 A/W, and the dynamic optical response had a relative standard deviation as low as 0.1831%. The discrete photosensor microarray chip with 174000 pixels in a 100 mm2 area showed a response difference of less than 6%. This method of nanoscale particle-controlled single crystal growth on a substrate offers a perspective for mild-condition preparation and in situ repair of crystals of various types. This advancement can propel the flexible integration and widespread application of perovskite devices.

High Q-Factor Single-Mode Lasing in Inorganic Perovskite Microcavities with Microfocusing Field Confinement

The realization of high-Q single-mode lasing on the microscale is significant for the advancement of on-chip integrated light sources. It remains a challenging trade-off between Q-factor enhancement and light-field localization to raise the lasing emission rate. Here, we fabricated a zero-dimensional perovskite microcavity integrated with a nondamage pressed microlens to three-dimensionally tailor the intracavity light field and demonstrated linearly and nonlinearly (two-photon) pumped lasing by this microfocusing configuration. Notably, the microlensing microcavity experimentally achieves a high Q-factor (16700), high polarization (99.6%), and high Purcell factor (11.40) single-mode lasing under high-repetition pulse pumping. Three-dimensional light-field confinement formed by the microlens and plate microcavity simultaneously reduces the mode volume (∼3.66 μm3) and suppresses diffraction and transverse walk-off loss, which induces discretization on energy-momentum dispersions and spatial electromagnetic-field distributions. The Q factor and Purcell factor of our lasing come out on top among most of the reported perovskite microcavities, paving a promising avenue toward further studying electrically driven on-chip microlasers.

Lead-Free Chiral Perovskite for High Degree of Circularly Polarized Light Emission and Spin Injection

We report a zero-dimensional (0D) lead-free chiral perovskite (S-/R-MBA)4Bi2I10 with a high degree of circularly polarized light (CPL) emission. Our 0D lead-free chiral perovskite exhibits an average degree of circular polarization (DOCP) of 19.8% at 78 K under linearly polarized laser excitation, and the maximum DOCP can reach 25.8%, which is 40 times higher than the highest DOCP of 0.5% in all reported lead-free chiral perovskites to the best of our knowledge. The high DOCP of (S-/R-MBA)4Bi2I10 is attributed to the free exciton emission with a Huang-Rhys factor of 2.8. In contrast, all the lead-free chiral perovskites in prior reports are dominant by self-trapped exciton in which the spin relaxation reduces DOCP dramatically. Moreover, we realize the manipulation of the valley degree of freedom of monolayer WSe2 by using the spin injection of the 0D chiral lead-free perovskites. Our results provide a new perspective to develop lead-free chiral perovskite devices for CPL light source, spintronics, and valleytronics.

Ultrahigh-Q Lead Halide Perovskite Microlasers

Lead halide perovskites have been promising platforms for micro- and nanolasers. However, the fragile nature of perovskites poses an extreme challenge to engineering a cavity boundary and achieving high-quality (Q) modes, severely hindering their practical applications. Here, we combine an etchless bound state in the continuum (BIC) and a chemically synthesized single-crystalline CsPbBr₃ microplate to demonstrate on-chip integrated perovskite microlasers with ultrahigh Q factors. By pattering polymer microdisks on CsPbBr₃ microplates, we show that record high-Q BIC modes can be formed by destructive interference between different in-plane radiation from whispering gallery modes. Consequently, a record high Q-factor of 1.04 × 10⁵ was achieved in our experiment. The high repeatability and high controllability of such ultrahigh Q BIC microlasers have also been experimentally confirmed. This research provides a new paradigm for perovskite nanophotonics.

Giant and Tunable Excitonic Optical Anisotropy in Single-Crystal Halide Perovskites

During the last years, giant optical anisotropy has demonstrated its paramount importance for light manipulation. In spite of recent advances in the field, the achievement of continuous tunability of optical anisotropy remains an outstanding challenge. Here, we present a solution to the problem through the chemical alteration of halogen atoms in single-crystal halide perovskites. As a result, we manage to continually modify the optical anisotropy by 0.14. We also discover that the halide perovskite can demonstrate optical anisotropy up to 0.6 in the visible range─the largest value among non-van der Waals materials. Moreover, our results reveal that this anisotropy could be in-plane and out-of-plane depending on perovskite shape─rectangular and square. As a practical demonstration, we have created perovskite anisotropic nanowaveguides and shown a significant impact of anisotropy on high-order guiding modes. These findings pave the way for halide perovskites as a next-generation platform for tunable anisotropic photonics.

Morphology dependent light-induced photoluminescence enhancement of CsPbBr3 microcrystals

Herein, we report a facile method for growing CsPbBr₃ cube and prism microcrystals by microspacing in-air sublimation. Morphology-dependent photoluminescence behavior investigation reveals that the CsPbBr₃ cubes show higher photoluminescence quantum yield and longer PL lifetime than the prisms. In contrast, CsPbBr₃ prisms exhibit more considerable light-induced photoluminescence enhancement.

The Dissociation of Exciton During the Lasing of a Single CsPbBr3 Microplate

In this work, the lasing of a single CsPbBr₃ microplate (MP) fabricated with chemical vapor deposition (CVD) is investigated from the viewpoint of exciton dissociation characterized with steady-state photoluminescence (PL) and time-resolved photoluminescence (TRPL). It is confirmed that the lasing performance is disturbed by the dissociation of excitons. The increase of lasing threshold with temperature originates from the dissociation of free excitons (FEs) to localized carriers (LCs), and the lasing failure is mostly ascribed to the dissociation of FEs to free carriers (FCs). The working temperature of micro/nanolasers based on metal halide perovskites (MHPs) could be raised up to the temperature determined by exciton binding energy while the laser heating effect is dealt with well. These findings advance our understanding on the photophysics of the lasing behaviors of micro/nanocavities based on MHPs and help us promote their performance by having better thermal management.

Hot Carrier Transfer in PtSe2/Graphene Enabled by the Hot Phonon Bottleneck

The charge transfer (CT) process of two-dimensional (2D) graphene/transition metal dichalcogenides (TMDs) heterostructures makes the photoelectric conversion ability of TMDs into a wider spectral range for the light harvester and photoelectric detector applications. However, the direct in situ investigation of the hot carrier transport in graphene/TMDs heterostructures has been rarely reported. Herein, using the optical pump and a terahertz (THz) probe (OPTP) spectroscopy, the CT process from graphene to five-layer PtSe₂ in the PtSe₂/graphene (P/G) heterostructure is demonstrated to be related to the pump fluence, which is enabled by the hot phonon bottleneck (HPB) effect in graphene. Furthermore, the frequency dispersion conductivity and the THz emission spectroscopy of the P/G heterostructure confirmed the existence of interlayer CT and its pump fluence-dependent behavior. Our results provide in-depth physical insights into the CT mechanism at the P/G van der Waals interface, which is crucial for further exploration of optoelectronic devices based on P/G heterostructures.