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Qi M, Tong T, Fan X, Li X, Wang S, Zhang G, Chen R, Hu J, Yang Z, Zeng G, Qin C, Xiao L, Jia S. Anomalous layer-dependent photoluminescence spectra of supertwisted spiral WS 2. OPTICS EXPRESS 2024; 32:10419-10428. [PMID: 38571254 DOI: 10.1364/oe.516177] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/21/2023] [Accepted: 02/21/2024] [Indexed: 04/05/2024]
Abstract
Twisted stacking of two-dimensional materials with broken inversion symmetry, such as spiral MoTe2 nanopyramids and supertwisted spiral WS2, emerge extremely strong second- and third-harmonic generation. Unlike well-studied nonlinear optical effects in these newly synthesized layered materials, photoluminescence (PL) spectra and exciton information involving their optoelectronic applications remain unknown. Here, we report layer- and power-dependent PL spectra of the supertwisted spiral WS2. The anomalous layer-dependent PL evolutions that PL intensity almost linearly increases with the rise of layer thickness have been determined. Furthermore, from the power-dependent spectra, we find the power exponents of the supertwisted spiral WS2 are smaller than 1, while those of the conventional multilayer WS2 are bigger than 1. These two abnormal phenomena indicate the enlarged interlayer spacing and the decoupling interlayer interaction in the supertwisted spiral WS2. These observations provide insight into PL features in the supertwisted spiral materials and may pave the way for further optoelectronic devices based on the twisted stacking materials.
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Hung NT, Zhang K, Van Thanh V, Guo Y, Puretzky AA, Geohegan DB, Kong J, Huang S, Saito R. Nonlinear Optical Responses of Janus MoSSe/MoS 2 Heterobilayers Optimized by Stacking Order and Strain. ACS NANO 2023; 17:19877-19886. [PMID: 37643404 DOI: 10.1021/acsnano.3c04436] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/31/2023]
Abstract
Nonlinear optical responses in second harmonic generation (SHG) of van der Waals heterobilayers, Janus MoSSe/MoS2, are theoretically optimized as a function of strain and stacking order by adopting an exchange-correlation hybrid functional and a real-time approach in first-principles calculation. We find that the calculated nonlinear susceptibility, χ(2), in AA stacking (550 pm/V) becomes three times as large as AB stacking (170 pm/V) due to the broken inversion symmetry in the AA stacking. The present theoretical prediction is compared with the observed SHG spectra of Janus MoSSe/MoS2 heterobilayers, in which the peak SHG intensity of AA stacking becomes four times as large as AB stacking. Furthermore, a relatively large, two-dimensional strain (4%) that breaks the C3v point group symmetry of the MoSSe/MoS2, enhances calculated χ(2) values for both AA (900 pm/V) and AB (300 pm/V) stackings 1.6 times as large as that without strain.
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Affiliation(s)
- Nguyen Tuan Hung
- Frontier Research Institute for Interdisciplinary Sciences, Tohoku University, Sendai 980-8578, Japan
- Department of Physics, Tohoku University, Sendai 980-8578, Japan
| | - Kunyan Zhang
- Department of Electrical and Computer Engineering, Rice University, Houston, Texas 77005, United States
| | - Vuong Van Thanh
- School of Mechanical Engineering, Hanoi University of Science and Technology, Hanoi 100000, Viet Nam
| | - Yunfan Guo
- Department of Chemistry, Zhejiang University, Hangzhou, Zhejiang 310058, China
| | - Alexander A Puretzky
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - David B Geohegan
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Jing Kong
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Shengxi Huang
- Department of Electrical and Computer Engineering, Rice University, Houston, Texas 77005, United States
| | - Riichiro Saito
- Department of Physics, Tohoku University, Sendai 980-8578, Japan
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Fu W, John M, Maddumapatabandi TD, Bussolotti F, Yau YS, Lin M, Johnson Goh KE. Toward Edge Engineering of Two-Dimensional Layered Transition-Metal Dichalcogenides by Chemical Vapor Deposition. ACS NANO 2023; 17:16348-16368. [PMID: 37646426 DOI: 10.1021/acsnano.3c04581] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/01/2023]
Abstract
The manipulation of edge configurations and structures in atomically-thin transition metal dichalcogenides (TMDs) for versatile functionalization has attracted intensive interest in recent years. The chemical vapor deposition (CVD) approach has shown promise for TMD edge engineering of atomic edge configurations (1H, 1T or 1T'-zigzag or armchair edges) as well as diverse edge morphologies (1D nanoribbons, 2D dendrites, 3D spirals, etc.). These edge-rich TMD layers offer versatile candidates for probing the physical and chemical properties and exploring potential applications in electronics, optoelectronics, catalysis, sensing, and quantum technologies. In this Review, we present an overview of the current state-of-the-art in the manipulation of TMD atomic edges and edge-rich structures using CVD. We highlight the vast range of distinct properties associated with these edge configurations and structures and provide insights into the opportunities afforded by such edge-functionalized crystals. The objective of this Review is to motivate further research and development efforts to use CVD as a scalable approach to harness the benefits of such crystal-edge engineering.
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Affiliation(s)
- Wei Fu
- Institute of Materials Research and Engineering (IMRE), Agency for Science Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03 138634, Singapore
| | - Mark John
- Institute of Materials Research and Engineering (IMRE), Agency for Science Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03 138634, Singapore
- Department of Physics, National University of Singapore, 2 Science Drive 3 117551, Singapore
| | - Thathsara D Maddumapatabandi
- Institute of Materials Research and Engineering (IMRE), Agency for Science Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03 138634, Singapore
| | - Fabio Bussolotti
- Institute of Materials Research and Engineering (IMRE), Agency for Science Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03 138634, Singapore
| | - Yong Sean Yau
- Institute of Materials Research and Engineering (IMRE), Agency for Science Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03 138634, Singapore
| | - Ming Lin
- Institute of Materials Research and Engineering (IMRE), Agency for Science Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03 138634, Singapore
| | - Kuan Eng Johnson Goh
- Institute of Materials Research and Engineering (IMRE), Agency for Science Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03 138634, Singapore
- Department of Physics, National University of Singapore, 2 Science Drive 3 117551, Singapore
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue 639798, Singapore
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Wei N, Ding Y, Zhang J, Li L, Zeng M, Fu L. Curvature geometry in 2D materials. Natl Sci Rev 2023; 10:nwad145. [PMID: 37389139 PMCID: PMC10306360 DOI: 10.1093/nsr/nwad145] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/12/2023] [Revised: 05/10/2023] [Accepted: 05/14/2023] [Indexed: 07/01/2023] Open
Abstract
The two-dimensional (2D) material family can be regarded as the extreme externalization form of the matter in the planar 2D space. These atomically thin materials have abundant curvature structures, which will significantly affect their atomic configurations and physicochemical properties. Curvature engineering offers a new tuning freedom beyond the thoroughly studied layer number, grain boundaries, stacking order, etc. The precise control of the curvature geometry in 2D materials can redefine this material family. Special attention will be given to this emerging field and highlight possible future directions. With the step-by-step achievement in understanding the curvature engineering effect in 2D materials and establishing reliable delicate curvature controlling strategies, a brand-new era of 2D materials research could be developed.
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Affiliation(s)
- Nan Wei
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, China
| | - Yiran Ding
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, China
| | - Jiaqian Zhang
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, China
| | - Linyi Li
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, China
| | | | - Lei Fu
- Corresponding author. E-mail:
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Madoune Y, Yang D, Ahmed Y, Al-Makeen MM, Huang H. PVD growth of spiral pyramid-shaped WS 2 on SiO 2/Si driven by screw dislocations. Front Chem 2023; 11:1132567. [PMID: 36936529 PMCID: PMC10022673 DOI: 10.3389/fchem.2023.1132567] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/27/2022] [Accepted: 02/22/2023] [Indexed: 03/06/2023] Open
Abstract
Atomically thin layered transition metal dichalcogenides (TMDs), such as MoS2 and WS2, have been getting much attention recently due to their interesting electronic and optoelectronic properties. Especially, spiral TMDs provide a variety of candidates for examining the light-matter interaction resulting from the broken inversion symmetry, as well as the potential new utilization in functional optoelectronic, electromagnetic and nanoelectronics devices. To realize their potential device applications, it is desirable to achieve controlled growth of these layered nanomaterials with a tunable stacking. Here, we demonstrate the Physical Vapor Deposition (PVD) growth of spiral pyramid-shaped WS2 with ∼200 μ m in size and the interesting optical properties via AFM and Raman spectroscopy. By controlling the precursors concentration and changing the initial nucleation rates in PVD growth, WS2 in different nanoarchitectures can be obtained. We discuss the growth mechanism for these spiral-patterned WS2 nanostructures based on the screw dislocations. This study provides a simple, scalable approach of screw dislocation-driven (SDD) growth of distinct TMD nanostructures with varying morphologies, and stacking.
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Affiliation(s)
- Yassine Madoune
- Hunan Key Laboratory of Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, China
- *Correspondence: Yassine Madoune,
| | - DingBang Yang
- Hunan Key Laboratory of Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, China
| | - Yameen Ahmed
- Department of Electrical and Computer Engineering, University of Victoria, Victoria, BC, Canada
| | - Mansour M. Al-Makeen
- Hunan Key Laboratory of Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, China
| | - Han Huang
- Hunan Key Laboratory of Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, China
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