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Wang C, Nan H, Wu Q, Wang W, Zheng T, Ni Z, Wu Z, Wan X, Cai Z, Gu X, Xiao S. High Responsivity, Wide Spectral Range, Large Anisotropy Ratio, and Self-Driven Detection of MoS 2/BP Heterostructure with Interfacial Regulation. ACS APPLIED MATERIALS & INTERFACES 2025; 17:30019-30028. [PMID: 40329894 DOI: 10.1021/acsami.5c05682] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/08/2025]
Abstract
The advancement of imaging systems calls for photodetectors that possess high sensitivity, wide spectral detection capabilities, self-driven functionality, and seamless integration. This research delves into the enhancement of electrical and optical responsiveness in MoS2/BP photodetectors at a 0 bias voltage. Through the utilization of soft-plasma technology to modify silicon-based substrates, surface states were improved, and interface coupling with 2D materials was enhanced. By incorporating a MoS2/BP heterojunction with these treated substrates, photodetectors were engineered to detect a broad spectrum of wavelengths ranging from visible light to near-infrared light (447-1550 nm) and operate in a zero-bias manner. These devices exhibited a maximum responsivity of 110.68 A/W, surpassing the performance of devices on untreated substrates by more than 500 times. The responsivity at 1550 nm saw an increase of over 3 orders of magnitude. Additionally, the rise and fall times were measured at 4.8 and 5.7 μs, respectively, with the polarization ratio improving from 0.18 to 0.51. These advancements in responsivity, spectral detection range, response time, and polarization ratio are pivotal for the practical implementation of self-driven multifunctional photodetectors on the market.
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Affiliation(s)
- Chenglin Wang
- School of Integrated Circuits, Jiangnan University, Wuxi 214122, China
| | - Haiyan Nan
- School of Integrated Circuits, Jiangnan University, Wuxi 214122, China
| | - Qianqian Wu
- School of Integrated Circuits, Jiangnan University, Wuxi 214122, China
| | - Wenhui Wang
- Key Laboratory of Quantum Materials and Devices(Southeast University), Ministry of Education, Nanjing 211189, China
| | - Ting Zheng
- Key Laboratory of Quantum Materials and Devices(Southeast University), Ministry of Education, Nanjing 211189, China
| | - Zhenhua Ni
- Key Laboratory of Quantum Materials and Devices(Southeast University), Ministry of Education, Nanjing 211189, China
| | - Zhangting Wu
- Hangzhou Dianzi Univ, Dept Elect Sci & Technol, Lab Nanoelect & NanoDevices, Hangzhou 310018, China
| | - Xi Wan
- School of Integrated Circuits, Jiangnan University, Wuxi 214122, China
| | - Zhengyang Cai
- School of Integrated Circuits, Jiangnan University, Wuxi 214122, China
| | - Xiaofeng Gu
- School of Integrated Circuits, Jiangnan University, Wuxi 214122, China
| | - Shaoqing Xiao
- School of Integrated Circuits, Jiangnan University, Wuxi 214122, China
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2
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Xu Y, Wang Y, Zhang C, Wu H, Tan C, Hu G, Wang Z. The role of trap states in MoS 2-based photodetectors. NANOSCALE 2025; 17:9245-9252. [PMID: 40114636 DOI: 10.1039/d4nr04974h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/22/2025]
Abstract
Two-dimensional materials show great potential for future optoelectronic device applications, especially in the field of broadband optical detection, due to their high optical responsivity and tunable bandgap structure. In communication and sensing applications, the detection of weak light signals is crucial for improving the quality of signal transmission and the sensitivity of sensors. Although the photogating effect has been shown to provide high light sensitivity, the key features to achieve this dominant light response have not been fully discussed. In this study, we explain in detail the physical mechanism of the photoresponse of molybdenum disulphide-based photodetectors and propose a general basis of judgement for comparing the magnitude of the trap-state action. Through experimental and theoretical analyses, we reveal the physical mechanisms of photocurrents at various stages in the optical ON/OFF switching cycles and provide a theoretical basis for optimising the performance of two-dimensional material-based photodetectors. The results show that the trap states significantly affect the photoresponse characteristics of photodetectors, especially the photocurrent changes at different stages of the optical ON/OFF switching cycles. These findings not only deepen the understanding of the photoelectric properties of two-dimensional materials, but also provide important theoretical guidance for the design of high-performance photodetectors.
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Affiliation(s)
- Yuhang Xu
- College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China.
| | - Yuxin Wang
- College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China.
| | - Chunchi Zhang
- College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China.
| | - Haijuan Wu
- College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China.
| | - Chao Tan
- College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China.
| | - Guohua Hu
- Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, Hong Kong SAR, 999077, China
| | - Zegao Wang
- College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China.
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3
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Ma Y, Chen M, Aguirre F, Yan Y, Pazos S, Liu C, Wang H, Yang T, Wang B, Gong C, Liu K, Liu JZ, Lanza M, Xue F, Zhang X. Van der Waals Engineering of One-Transistor-One-Ferroelectric-Memristor Architecture for an Energy-Efficient Neuromorphic Array. NANO LETTERS 2025; 25:2528-2537. [PMID: 39898965 PMCID: PMC11827105 DOI: 10.1021/acs.nanolett.4c06118] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/03/2024] [Revised: 01/21/2025] [Accepted: 01/24/2025] [Indexed: 02/04/2025]
Abstract
Two-dimensional-material-based memristor arrays hold promise for data-centric applications such as artificial intelligence and big data. However, accessing individual memristor cells and effectively controlling sneak current paths remain challenging. Here, we propose a van der Waals engineering approach to create one-transistor-one-memristor (1T1M) cells by assembling the emerging two-dimensional ferroelectric CuCrP2S6 with MoS2 and h-BN. The memory cell exhibits high resistance tunability (106), low sneak current (120 fA), and low static power (12 fW). A neuromorphic array with greatly reduced crosstalk is experimentally demonstrated. The nonvolatile resistance switching is driven by electric-field-induced ferroelectric polarization reversal. This van der Waals engineering approach offers a universal solution for creating compact and energy-efficient 2D in-memory computation systems for next-generation artificial neural networks.
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Affiliation(s)
- Yinchang Ma
- Physical
Science and Engineering Division, King Abdullah
University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
| | - Maolin Chen
- Physical
Science and Engineering Division, King Abdullah
University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
| | - Fernando Aguirre
- Intrinsic
Semiconductor Technologies, Ltd., Buckinghamshire HP18 9SU, United Kingdom
| | - Yuan Yan
- Department
of Mechanical Engineering, The University
of Melbourne, Parkville, VIC 3010, Australia
| | - Sebastian Pazos
- Physical
Science and Engineering Division, King Abdullah
University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
| | - Chen Liu
- Physical
Science and Engineering Division, King Abdullah
University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
| | - Heng Wang
- Electrical
and Computer Engineering, King Abdullah
University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
| | - Tao Yang
- Physical
Science and Engineering Division, King Abdullah
University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
| | - Baoyu Wang
- ZJU-Hangzhou
Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou 311215, China
| | - Cheng Gong
- Department
of Electrical and Computer Engineering and Quantum Technology Center, University of Maryland, College Park, Maryland 20742, United States
| | - Kai Liu
- Physics
Department, Georgetown University, Washington, D.C. 20057, United States
| | - Jefferson Zhe Liu
- Department
of Mechanical Engineering, The University
of Melbourne, Parkville, VIC 3010, Australia
| | - Mario Lanza
- Department
of Materials Science and Engineering, National
University of Singapore, Singapore 117575, Singapore
- Singapore
Institute for Functional Intelligent Materials, National University of Singapore, Singapore 117544, Singapore
| | - Fei Xue
- Center
for
Quantum Matter, School of Physics, Zhejiang
University, Hangzhou 311215, China
- ZJU-Hangzhou
Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou 311215, China
| | - Xixiang Zhang
- Physical
Science and Engineering Division, King Abdullah
University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
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Li H, Li Q, Sun T, Zhou Y, Han ST. Recent advances in artificial neuromorphic applications based on perovskite composites. MATERIALS HORIZONS 2024; 11:5499-5532. [PMID: 39140168 DOI: 10.1039/d4mh00574k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/15/2024]
Abstract
High-performance perovskite materials with excellent physical, electronic, and optical properties play a significant role in artificial neuromorphic devices. However, the development of perovskites in microelectronics is inevitably hindered by their intrinsic non-ideal properties, such as high defect density, environmental sensitivity, and toxicity. By leveraging materials engineering, integrating various materials with perovskites to leverage their mutual strengths presents great potential to enhance ion migration, energy level alignment, photoresponsivity, and surface passivation, thereby advancing optoelectronic and neuromorphic device development. This review initially provides an overview of perovskite materials across different dimensions, highlighting their physical properties and detailing their applications and metrics in two- and three-terminal devices. Subsequently, we comprehensively summarize the application of perovskites in combination with other materials, including organics, nanomaterials, oxides, ferroelectrics, and crystalline porous materials (CPMs), to develop advanced devices such as memristors, transistors, photodetectors, sensors, light-emitting diodes (LEDs), and artificial neuromorphic systems. Lastly, we outline the challenges and future research directions in synthesizing perovskite composites for neuromorphic devices. Through the review and analysis, we aim to broaden the utilization of perovskites and their composites in neuromorphic research, offering new insights and approaches for grasping the intricate physical working mechanisms and functionalities of perovskites.
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Affiliation(s)
- Huaxin Li
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Qingxiu Li
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Tao Sun
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
| | - Su-Ting Han
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong 999077, P. R. China.
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Dai Y, He Q, Huang Y, Duan X, Lin Z. Solution-Processable and Printable Two-Dimensional Transition Metal Dichalcogenide Inks. Chem Rev 2024; 124:5795-5845. [PMID: 38639932 DOI: 10.1021/acs.chemrev.3c00791] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/20/2024]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDs) with layered crystal structures have been attracting enormous research interest for their atomic thickness, mechanical flexibility, and excellent electronic/optoelectronic properties for applications in diverse technological areas. Solution-processable 2D TMD inks are promising for large-scale production of functional thin films at an affordable cost, using high-throughput solution-based processing techniques such as printing and roll-to-roll fabrications. This paper provides a comprehensive review of the chemical synthesis of solution-processable and printable 2D TMD ink materials and the subsequent assembly into thin films for diverse applications. We start with the chemical principles and protocols of various synthesis methods for 2D TMD nanosheet crystals in the solution phase. The solution-based techniques for depositing ink materials into solid-state thin films are discussed. Then, we review the applications of these solution-processable thin films in diverse technological areas including electronics, optoelectronics, and others. To conclude, a summary of the key scientific/technical challenges and future research opportunities of solution-processable TMD inks is provided.
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Affiliation(s)
- Yongping Dai
- Department of Chemistry, Engineering Research Center of Advanced Rare Earth Materials (Ministry of Education), Tsinghua University, Beijing 100084, China
| | - Qiyuan He
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong 99907, China
| | - Yu Huang
- Department of Materials Science and Engineering, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, California 90095, United States
- California NanoSystems Institute, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Zhaoyang Lin
- Department of Chemistry, Engineering Research Center of Advanced Rare Earth Materials (Ministry of Education), Tsinghua University, Beijing 100084, China
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Dong X, Sun H, Lai X, Yang F, Ma T, Zhang X, Chen J, Zhao Y, Chen J, Zhang X, Li Y. MoO x Synaptic Memristor with Programmable Multilevel Conductance for Reliable Neuromorphic Hardware. J Phys Chem Lett 2024; 15:3668-3676. [PMID: 38535723 DOI: 10.1021/acs.jpclett.4c00600] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/05/2024]
Abstract
Memristor holds great potential for enabling next-generation neuromorphic computing hardware. Controlling the interfacial characteristics of the device is critical for seamlessly integrating and replicating the synaptic dynamic behaviors; however, it is commonly overlooked. Herein, we report the straightforward oxidation of a Mo electrode in air to design MoOx memristors that exhibit nonvolatile ultrafast switching (0.6-0.8 mV/decade, <1 mV/decade) with a high on/off ratio (>104), a long durability (>104 s), a low power consumption (17.9 μW), excellent device-to-device uniformity, ingeniously synaptic behavior, and finely programmable multilevel analog switching. The analyzed physical mechanism of the observed resistive switching behavior might be the conductive filaments formed by the oxygen vacancies. Intriguingly, upon organization into memristor-based crossbar arrays, in addition to simulated multipattern memorization, edge detection on random images can be implemented well by parallel processing of pixels using a 3 × 3 × 2 array of Prewitt filter groups. These are vital functions for neural system hardware in efficient in-memory computing neural systems with massive parallelism beyond a von Neumann architecture.
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Affiliation(s)
- Xiaofei Dong
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Hao Sun
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Xinhua Lai
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Fengxia Yang
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Tingting Ma
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Xiang Zhang
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Jianbiao Chen
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Yun Zhao
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Jiangtao Chen
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Xuqiang Zhang
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Yan Li
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
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7
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Zhou H, Li S, Ang KW, Zhang YW. Recent Advances in In-Memory Computing: Exploring Memristor and Memtransistor Arrays with 2D Materials. NANO-MICRO LETTERS 2024; 16:121. [PMID: 38372805 PMCID: PMC10876512 DOI: 10.1007/s40820-024-01335-2] [Citation(s) in RCA: 20] [Impact Index Per Article: 20.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/17/2023] [Accepted: 12/25/2023] [Indexed: 02/20/2024]
Abstract
The conventional computing architecture faces substantial challenges, including high latency and energy consumption between memory and processing units. In response, in-memory computing has emerged as a promising alternative architecture, enabling computing operations within memory arrays to overcome these limitations. Memristive devices have gained significant attention as key components for in-memory computing due to their high-density arrays, rapid response times, and ability to emulate biological synapses. Among these devices, two-dimensional (2D) material-based memristor and memtransistor arrays have emerged as particularly promising candidates for next-generation in-memory computing, thanks to their exceptional performance driven by the unique properties of 2D materials, such as layered structures, mechanical flexibility, and the capability to form heterojunctions. This review delves into the state-of-the-art research on 2D material-based memristive arrays, encompassing critical aspects such as material selection, device performance metrics, array structures, and potential applications. Furthermore, it provides a comprehensive overview of the current challenges and limitations associated with these arrays, along with potential solutions. The primary objective of this review is to serve as a significant milestone in realizing next-generation in-memory computing utilizing 2D materials and bridge the gap from single-device characterization to array-level and system-level implementations of neuromorphic computing, leveraging the potential of 2D material-based memristive devices.
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Affiliation(s)
- Hangbo Zhou
- Institute of High Performance Computing (IHPC), Agency for Science, Technology and Research (A*STAR), 1 Fusionopolis Way, #16-16 Connexis, Singapore, 138632, Republic of Singapore
| | - Sifan Li
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Republic of Singapore
| | - Kah-Wee Ang
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Republic of Singapore.
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore, 138634, Republic of Singapore.
| | - Yong-Wei Zhang
- Institute of High Performance Computing (IHPC), Agency for Science, Technology and Research (A*STAR), 1 Fusionopolis Way, #16-16 Connexis, Singapore, 138632, Republic of Singapore.
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Zhang Q, Jiang Q, Fan F, Liu G, Chen Y, Zhang B. MoS 2 Quantum Dot-Optimized Conductive Channels for a Conjugated Polymer-Based Synaptic Memristor. ACS APPLIED MATERIALS & INTERFACES 2023; 15:59630-59642. [PMID: 38103041 DOI: 10.1021/acsami.3c12674] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/17/2023]
Abstract
Donor-acceptor-type conjugated polymers are widely used in memristors due to their unique push-pull electron structures and charge transfer mechanisms. However, the inherently inhomogeneous microstructure of polymer films and their low crystallinity produce randomness that destabilizes formed conductive channels, giving polymer-based memristors unstable switching behavior. In this contribution, we prepared a synaptic device based on PM6-MoS2 QD (molybdenum disulfide quantum dot) nanocomposites. In the composites, MoS2 QDs provided the active centers for forming conductive channels via electron trapping and detrapping. They also controlled the directional formation of conductive channels between PM6 and MoS2 QDs, reducing randomness and giving devices a narrow switching voltage range and cycling longevity. The device exhibited continuous multistage conductance states under a direct current voltage sweep and simulated a variety of synaptic functions, including long-term potentiation, long-term depression, short-term potentiation, short-term depression, paired-pulse facilitation, spiking-rate-dependent plasticity, and "learning experience" behavior. The memristor could also perform arithmetic, including "counting" and "subtraction" operations. This work provides a new approach to improving the performance of memristors for neuromorphic computing.
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Affiliation(s)
- Qiongshan Zhang
- Key Laboratory for Advanced Materials and Joint International Research Laboratory of Precision Chemistry and Molecular Engineering, School of Chemistry and Molecular Engineering, East China University of Science and Technology, Shanghai 200237, China
| | - Qizhi Jiang
- Key Laboratory for Advanced Materials and Joint International Research Laboratory of Precision Chemistry and Molecular Engineering, School of Chemistry and Molecular Engineering, East China University of Science and Technology, Shanghai 200237, China
| | - Fei Fan
- School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
- Shanghai i-Reader Biotech Co., Ltd., Shanghai 201114, China
| | - Gang Liu
- School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Yu Chen
- Key Laboratory for Advanced Materials and Joint International Research Laboratory of Precision Chemistry and Molecular Engineering, School of Chemistry and Molecular Engineering, East China University of Science and Technology, Shanghai 200237, China
| | - Bin Zhang
- Key Laboratory for Advanced Materials and Joint International Research Laboratory of Precision Chemistry and Molecular Engineering, School of Chemistry and Molecular Engineering, East China University of Science and Technology, Shanghai 200237, China
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9
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Yang F, Wei W, Dong X, Zhao Y, Chen J, Chen J, Zhang X, Li Y. Optoelectronic bio-synaptic plasticity on neotype kesterite memristor with switching ratio >104. J Chem Phys 2023; 159:114701. [PMID: 37712793 DOI: 10.1063/5.0167187] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/10/2023] [Accepted: 08/28/2023] [Indexed: 09/16/2023] Open
Abstract
Optoelectronic memristors hold the most potential for realizing next-generation neuromorphic computation; however, memristive devices that can integrate excellent resistive switching and both electrical-/light-induced bio-synaptic behaviors are still challenging to develop. In this study, an artificial optoelectronic synapse is proposed and realized using a kesterite-based memristor with Cu2ZnSn(S,Se)4 (CZTSSe) as the switching material and Mo/Ag as the back/top electrode. Benefiting from unique electrical features and a bi-layered structure of CZTSSe, the memristor exhibits highly stable nonvolatile resistive switching with excellent spatial uniformity, concentrated Set/Reset voltage distribution (variation <0.08/0.02 V), high On/Off ratio (>104), and long retention time (>104 s). A possible mechanism of the switching behavior in such a device is proposed. Furthermore, these memristors successfully achieve essential bio-synaptic functions under both electrical and various visible light (470-655 nm) stimulations, including electrical-induced excitatory postsynaptic current, paired pulse facilitation, long-term potentiation, long-term depression, spike-timing-dependent plasticity, as well as light-stimulated short-/long-term plasticity and learning-forgetting-relearning process. As such, the proposed neotype kesterite-based memristor demonstrates significant potential in facilitating artificial optoelectronic synapses and enabling neuromorphic computation.
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Affiliation(s)
- Fengxia Yang
- Key Laboratory of Atomic and Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Wenbin Wei
- Key Laboratory of Atomic and Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Xiaofei Dong
- Key Laboratory of Atomic and Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Yun Zhao
- Key Laboratory of Atomic and Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Jiangtao Chen
- Key Laboratory of Atomic and Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Jianbiao Chen
- Key Laboratory of Atomic and Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Xuqiang Zhang
- Key Laboratory of Atomic and Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Yan Li
- Key Laboratory of Atomic and Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
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