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Lv C, Yang X, Wu Y, Lei F, Liang Y, Yang D, Sui L, Qin J, Wu Q, Lai S, Liu H, Zang J, Cheng S, Liu K, Shan C. Deviatoric stress-induced transition of self-trapped exciton emissions. Nat Commun 2025; 16:1913. [PMID: 39994188 PMCID: PMC11850603 DOI: 10.1038/s41467-025-57026-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/27/2024] [Accepted: 02/07/2025] [Indexed: 02/26/2025] Open
Abstract
Self-trapped exciton (STE) emissions, featured by broad spectral band and minimal self-absorption, have garnered considerable attention for advanced lighting and imaging applications. However, developing strategies to facilitate multiple STE states, modulate the emission energy and extend the emission range remains a great challenge. Here, we introduce deviatoric stress to induce another intrinsic STE state (STE-2) and enable transitions between the intrinsic STE state (STE-1) and STE-2 in pyramidal ZnO nanocrystals. This approach results in a remarkable shift in emission energy, from yellow-green (2.34 eV) to deep-blue (2.88 eV). Combined in-situ stress monitoring and optical experiments show that the STE-2 state originates from a potential well generated by the deviatoric yield deformation of the pyramidal crystals under deviatoric stress. Spectroscopic and dynamical characterizations of the two STE emissions reveal a transition process in the carrier's relaxation pathway from STE-2 to STE-1, and conversely at much higher pressures. These findings demonstrate that deviatoric stress serves as a robust tool for modulating STE emissions and provide new insights into the evolution of carrier dynamics of STE emissions.
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Affiliation(s)
- Chaofan Lv
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450052, China
| | - Xigui Yang
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450052, China.
| | - Yanran Wu
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450052, China
| | - Feihu Lei
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450052, China
| | - Yachuan Liang
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450052, China
| | - Dongwen Yang
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450052, China
| | - Laizhi Sui
- State Key Laboratory of Molecular Reaction Dynamics and Dalian Coherent Light Source, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, 116023, China
| | - Jinxu Qin
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450052, China
| | - Qilong Wu
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450052, China
| | - Shoulong Lai
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450052, China
| | - Hang Liu
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450052, China
| | - Jinhao Zang
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450052, China
| | - Shaobo Cheng
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450052, China
| | - Kaikai Liu
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450052, China.
| | - Chongxin Shan
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450052, China.
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Gao G, Xu SY, Qi X, Yang JR, Lin P, Chen J, Huang XY, Du KZ. Organic Ligand Exchange: The Chiral Structure-Property Regulation of Cuprous Halides. Inorg Chem 2024; 63:24554-24562. [PMID: 39670802 DOI: 10.1021/acs.inorgchem.4c03561] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/14/2024]
Abstract
The strategy of organic ligand exchange is proposed to tune the optical properties of organic-inorganic hybrid cuprous halides. In this work, the chiral ligand (S)-(-)-2,2'-bis(di-p-tolylphosphino)-1,1'-binaphthyl ((S)-Tol-BINAP) and achiral triphenylphosphine (PPh3) are introduced into cuprous halides CuX-PPh3-[(S)-Tol-BINAP] (X = Cl, Br, I) through organic ligand exchange. As a result, the mixed organic ligands can enhance second harmonic generation (SHG) and aggregation-induced emission (AIE) optical properties. Moreover, the title compounds exhibit progressively enlarged SHG effects along with heavier halogen substitution due to their stronger polarizability. In the meantime, the reduced π-π stacking interaction of the organic ligand will improve their photoluminescence quantum yield. The experimental results combined with the theoretical calculation clarify the structure-property relationship well. Furthermore, the title compounds have been developed for the application of latent fingerprint detection.
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Affiliation(s)
- Guanlei Gao
- College of Chemistry and Materials Science, Fujian Key Laboratory of Polymer Materials, Fujian Normal University, Fuzhou 350007, China
| | - Si-Yu Xu
- College of Chemistry and Materials Science, Fujian Key Laboratory of Polymer Materials, Fujian Normal University, Fuzhou 350007, China
| | - Xinghui Qi
- The International Joint Institute of Tianjin University, Fuzhou, Tianjin University, Tianjin 300072, China
| | - Jie-Ru Yang
- College of Chemistry and Materials Science, Fujian Key Laboratory of Polymer Materials, Fujian Normal University, Fuzhou 350007, China
| | - Peiqi Lin
- College of Chemistry and Materials Science, Fujian Key Laboratory of Polymer Materials, Fujian Normal University, Fuzhou 350007, China
| | - Jin Chen
- College of Chemistry and Materials Science, Fujian Key Laboratory of Polymer Materials, Fujian Normal University, Fuzhou 350007, China
| | - Xiao-Ying Huang
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
| | - Ke-Zhao Du
- College of Chemistry and Materials Science, Fujian Key Laboratory of Polymer Materials, Fujian Normal University, Fuzhou 350007, China
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Shi H, Chen L, Moutaabbid H, Feng Z, Zhang G, Wang L, Li Y, Guo H, Liu C. Mechanism of Pressure-Modulated Self-Trapped Exciton Emission in Cs 2TeCl 6 Double Perovskite. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2405692. [PMID: 39221636 DOI: 10.1002/smll.202405692] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/09/2024] [Revised: 08/17/2024] [Indexed: 09/04/2024]
Abstract
Pressure-modulated self-trapped exciton (STE) emission mechanism in all-inorganic lead-free metal halide double perovskites characterized by large Stokes-shifted broadband emission, has attracted much attention across various fields such as optics, optoelectronics, and biomedical sciences. Here, by employing the all-inorganic lead-free metal halide double perovskite Cs2TeCl6 as a paradigm, the authors elucidate that the performance of STE emission can be modulated by pressure, attributable to the pressure-induced evolution of the electronic state (ES). Two ES transitions happen at pressures of 1.6 and 5.8 GPa, sequentially. The electronic behaviors of Cs2TeCl6 can be jointly modulated by both pressure and ES transitions. When the pressure reaches 1.6 GPa, the Huang-Rhys factor S, indicative of the strength of electron-phonon coupling, attains an optimum value of ≈12.0, correlating with the pressure-induced photoluminescence (PL) intensity of Cs2TeCl6 is 4.8-fold that of its PL intensity under ambient pressure. Through analyzing the pressure-dependent STE dynamic behavioral changes, the authors have revealed the microphysical mechanism underlying the pressure-modulated enhancement and quenching of STE emission in Cs2TeCl6.
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Affiliation(s)
- Han Shi
- School of Physics Science & Information Technology, Liaocheng University, Liaocheng, 252059, P. R. China
| | - Lin Chen
- School of Physics Science & Information Technology, Liaocheng University, Liaocheng, 252059, P. R. China
| | - Hicham Moutaabbid
- CNRS, Institut de Minéralogie, de Physique des Matériaux et de Cosmochimie (IMPMC), UMR CNRS 7590, Muséum National d'Histoire Naturelle, IRD UMR 206, Sorbonne Université, 4 place Jussieu, Paris, 75005, France
| | - Zhenbao Feng
- School of Physics Science & Information Technology, Liaocheng University, Liaocheng, 252059, P. R. China
| | - Guozhao Zhang
- School of Physics Science & Information Technology, Liaocheng University, Liaocheng, 252059, P. R. China
| | - Lingrui Wang
- Key Laboratory of Material Physics, Ministry of Education, School of Physics, Zhengzhou University, Zhengzhou, 450052, P. R. China
| | - Yinwei Li
- Laboratory of Quantum Functional Materials Design and Application, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou, 221116, P. R. China
| | - Haizhong Guo
- Key Laboratory of Material Physics, Ministry of Education, School of Physics, Zhengzhou University, Zhengzhou, 450052, P. R. China
| | - Cailong Liu
- School of Physics Science & Information Technology, Liaocheng University, Liaocheng, 252059, P. R. China
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Yang YK, Geng XY, Liu T, Ma YJ, Han SD, Xue ZZ, Pan J. Dual-Template-Directed Zero-Dimensional Bismuth Chlorides: Structures, Luminescence, Photoinduced Chromism, and Enhanced Proton Conductivity. Inorg Chem 2024; 63:18865-18876. [PMID: 39303061 DOI: 10.1021/acs.inorgchem.4c03047] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/22/2024]
Abstract
Zero-dimensional (0D) hybrid organic-inorganic bismuth halides have attracted immense scientific interest as promising candidates for lead-free materials. Here, by using a typical solvothermal method, two mixed-cation-phase 0D hybrid bismuth chlorides of [HPDA][H2PDA]BiCl6 (1) and [Hbzim][H2PA]BiCl6 (2) (PDA = bis(4-pyridyl)amine, bzim = benzimidazole, PA = 2-picolylamine) have been assembled based on a series of organic amine guests. Both compounds exhibit interesting photoluminescence phenomena, in which compound 1 exhibits a double emission property of blue fluorescence and yellow-green phosphorescence simultaneously, while compound 2 exhibits wide-band yellow-green emission under visible light excitation. The luminescence mechanism is explained by experiments and theoretical calculations. In view of the fact that halometallate units and the conjugated nitrogen heterocyclic systems can act as electron donors and electron acceptors, respectively, both compounds exhibit free radical-driven photochromism induced by electron transfer under xenon lamp irradiation at room temperature. In addition, benefiting from abundant hydrogen bond networks in structures, the two compounds show significant temperature-dependent proton conduction behavior in the range of 298-343 K, and the proton conductivity of both compounds is significantly improved after light irradiation. Our study demonstrates two novel hybrid mixed-cation-phase 0D hybrid bismuth halides with photoluminescence, photochromism, and photomodulated proton conduction properties, which enriches the dual-template-directed metal halide system and provides a feasible scheme for the synthesis of photoresponsive smart materials.
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Affiliation(s)
- Yu-Kun Yang
- College of Chemistry and Chemical Engineering, Qingdao University, Qingdao 266071, Shandong, China
| | - Xue-Yun Geng
- State Key Laboratory of Microbial Technology, Shandong University, Qingdao 266237, China
| | - Tong Liu
- College of Chemistry and Chemical Engineering, Qingdao University, Qingdao 266071, Shandong, China
| | - Yu-Juan Ma
- College of Chemistry and Chemical Engineering, Qingdao University, Qingdao 266071, Shandong, China
| | - Song-De Han
- College of Chemistry and Chemical Engineering, Qingdao University, Qingdao 266071, Shandong, China
| | - Zhen-Zhen Xue
- College of Chemistry and Chemical Engineering, Qingdao University, Qingdao 266071, Shandong, China
| | - Jie Pan
- College of Chemistry and Chemical Engineering, Qingdao University, Qingdao 266071, Shandong, China
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Zhang W, Zheng W, Li L, Huang P, Xu J, Zhang W, Shao Z, Chen X. Unlocking the Potential of Organic-Inorganic Hybrid Manganese Halides for Advanced Optoelectronic Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2408777. [PMID: 39101296 DOI: 10.1002/adma.202408777] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/19/2024] [Revised: 07/20/2024] [Indexed: 08/06/2024]
Abstract
Organic-inorganic hybrid manganese(II) halides (OIMnHs) have garnered tremendous interest across a wide array of research fields owing to their outstanding optical properties, abundant structural diversity, low-cost solution processibility, and low toxicity, which make them extremely suitable for use as a new class of luminescent materials for various optoelectronic applications. Over the past years, a plethora of OIMnHs with different structural dimensionalities and multifunctionalities such as efficient photoluminescence (PL), radioluminescence, circularly polarized luminescence, and mechanoluminescence have been newly created by judicious screening of the organic cations and inorganic Mn(II) polyhedra. Specifically, through precise molecular and structural engineering, a series of OIMnHs with near-unity PL quantum yields, high anti-thermal quenching properties, and excellent stability in harsh conditions have been devised and explored for applications in light-emitting diodes (LEDs), X-ray scintillators, multimodal anti-counterfeiting, and fluorescent sensing. In this review, the latest advancements in the development of OIMnHs as efficient light-emitting materials are summarized, which covers from their fundamental physicochemical properties to advanced optoelectronic applications, with an emphasis on the structural and functionality design especially for LEDs and X-ray detection and imaging. Current challenges and future efforts to unlock the potentials of these promising materials are also envisioned.
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Affiliation(s)
- Wei Zhang
- State Key Laboratory of Structural Chemistry, Fujian Key Laboratory of Nanomaterials, and CAS Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China
- Key Laboratory of Advanced Materials Technologies and International (Hongkong, Macao and Taiwan) Joint Laboratory on Advanced Materials Technologies, College of Materials Science and Engineering, Fuzhou University, Fuzhou, Fujian, 350108, China
| | - Wei Zheng
- State Key Laboratory of Structural Chemistry, Fujian Key Laboratory of Nanomaterials, and CAS Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China
| | - Lingyun Li
- Key Laboratory of Advanced Materials Technologies and International (Hongkong, Macao and Taiwan) Joint Laboratory on Advanced Materials Technologies, College of Materials Science and Engineering, Fuzhou University, Fuzhou, Fujian, 350108, China
| | - Ping Huang
- State Key Laboratory of Structural Chemistry, Fujian Key Laboratory of Nanomaterials, and CAS Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China
| | - Jin Xu
- State Key Laboratory of Structural Chemistry, Fujian Key Laboratory of Nanomaterials, and CAS Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China
| | - Wen Zhang
- State Key Laboratory of Structural Chemistry, Fujian Key Laboratory of Nanomaterials, and CAS Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China
| | - Zhiqing Shao
- State Key Laboratory of Structural Chemistry, Fujian Key Laboratory of Nanomaterials, and CAS Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China
| | - Xueyuan Chen
- State Key Laboratory of Structural Chemistry, Fujian Key Laboratory of Nanomaterials, and CAS Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China
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Wang Q, Wang C, Shi H, Chen J, Yang J, Beitlerova A, Kucerkova R, Zhou Z, Li Y, Nikl M, Sun X, OuYang X, Wu Y. Exciton-harvesting enabled efficient charged particle detection in zero-dimensional halides. LIGHT, SCIENCE & APPLICATIONS 2024; 13:190. [PMID: 39138182 PMCID: PMC11322634 DOI: 10.1038/s41377-024-01532-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/10/2024] [Revised: 06/24/2024] [Accepted: 07/15/2024] [Indexed: 08/15/2024]
Abstract
Materials for radiation detection are critically important and urgently demanded in diverse fields, starting from fundamental scientific research to medical diagnostics, homeland security, and environmental monitoring. Low-dimensional halides (LDHs) exhibiting efficient self-trapped exciton (STE) emission with high photoluminescence quantum yield (PLQY) have recently shown a great potential as scintillators. However, an overlooked issue of exciton-exciton interaction in LDHs under ionizing radiation hinders the broadening of its radiation detection applications. Here, we demonstrate an exceptional enhancement of exciton-harvesting efficiency in zero-dimensional (0D) Cs3Cu2I5:Tl halide single crystals by forming strongly localized Tl-bound excitons. Because of the suppression of non-radiative exciton-exciton interaction, an excellent α/β pulse-shape-discrimination (PSD) figure-of-merit (FoM) factor of 2.64, a superior rejection ratio of 10-9, and a high scintillation yield of 26 000 photons MeV-1 under 5.49 MeV α-ray are achieved in Cs3Cu2I5:Tl single crystals, outperforming the commercial ZnS:Ag/PVT composites for charged particle detection applications. Furthermore, a radiation detector prototype based on Cs3Cu2I5:Tl single crystal demonstrates the capability of identifying radioactive 220Rn gas for environmental radiation monitoring applications. We believe that the exciton-harvesting strategy proposed here can greatly boost the applications of LDHs materials.
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Affiliation(s)
- Qian Wang
- Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 201899, China
| | - Chenger Wang
- Institute of High Energy Physics, Chinese Academy of Sciences, Beijing, 100049, China
- National Engineering Research Center for Rare Earth, Grirem Advanced Materials Co., Ltd. and General Research Institute for Nonferrous Metals, Beijing, 100088, China
| | - Hongliang Shi
- Department of Physics, Beihang University, Beijing, 100191, China
| | - Jie Chen
- Institute of High Energy Physics, Chinese Academy of Sciences, Beijing, 100049, China
- Spallation Neutron Source Science Center, Dongguan, 523803, China
| | - Junye Yang
- Institute of High Energy Physics, Chinese Academy of Sciences, Beijing, 100049, China
- Spallation Neutron Source Science Center, Dongguan, 523803, China
| | - Alena Beitlerova
- Department of Optical Materials, Institute of Physics of the Czech Academy of Sciences, Prague, 16200, Czech Republic
| | - Romana Kucerkova
- Department of Optical Materials, Institute of Physics of the Czech Academy of Sciences, Prague, 16200, Czech Republic
| | - Zhengyang Zhou
- Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 201899, China
| | - Yunyun Li
- Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 201899, China
| | - Martin Nikl
- Department of Optical Materials, Institute of Physics of the Czech Academy of Sciences, Prague, 16200, Czech Republic
| | - Xilei Sun
- Institute of High Energy Physics, Chinese Academy of Sciences, Beijing, 100049, China.
| | - Xiaoping OuYang
- Northwest Institute of Nuclear Technology, Xi'an, 710024, China.
| | - Yuntao Wu
- Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 201899, China.
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Wang X, Wang C, Tao C, Kuang Z, Wang X, Xu L, Wei Y, Peng Q, Huang W, Wang J. Unraveling the Origin of Long-Lifetime Emission in Low-Dimensional Copper Halides via a Magneto-optical Study. NANO LETTERS 2023; 23:11860-11865. [PMID: 38085911 DOI: 10.1021/acs.nanolett.3c03874] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/28/2023]
Abstract
The origin of the long lifetime of self-trapped exciton emission in low-dimensional copper halides is currently the subject of extensive debate. In this study, we address this issue in a prototypical zero-dimensional copper halide, Cs2(C18)2Cu2I4-DMSO, through magneto-optical studies at low temperatures down to 0.2 K. Our results exclude spin-forbidden dark states and indirect phonon-assisted recombination as the origin of the long photoluminescence lifetime. Instead, we propose that the minimal Franck-Condon factor of the radiative transition from excited states to the ground state is the decisive factor, based on the transition probability analysis. Our findings offer insights into the electronic processes in low-dimensional copper halides and have the potential to advance the application of these distinctive materials in optoelectronics.
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Affiliation(s)
- Xing Wang
- Key Laboratory of Flexible Electronics, Institute of Advanced Materials and School of Flexible Electronics (Future Technologies), Nanjing Tech University, 30 South Puzhu Road, Nanjing, Jiangsu 211816, China
| | - Chengcheng Wang
- Key Laboratory of Flexible Electronics, Institute of Advanced Materials and School of Flexible Electronics (Future Technologies), Nanjing Tech University, 30 South Puzhu Road, Nanjing, Jiangsu 211816, China
| | - Cong Tao
- Key Laboratory of Flexible Electronics, Institute of Advanced Materials and School of Flexible Electronics (Future Technologies), Nanjing Tech University, 30 South Puzhu Road, Nanjing, Jiangsu 211816, China
| | - Zhiyuan Kuang
- Key Laboratory of Flexible Electronics, Institute of Advanced Materials and School of Flexible Electronics (Future Technologies), Nanjing Tech University, 30 South Puzhu Road, Nanjing, Jiangsu 211816, China
| | - Xinrui Wang
- Key Laboratory of Flexible Electronics, Institute of Advanced Materials and School of Flexible Electronics (Future Technologies), Nanjing Tech University, 30 South Puzhu Road, Nanjing, Jiangsu 211816, China
| | - Lei Xu
- Key Laboratory of Flexible Electronics, Institute of Advanced Materials and School of Flexible Electronics (Future Technologies), Nanjing Tech University, 30 South Puzhu Road, Nanjing, Jiangsu 211816, China
| | - Yingqiang Wei
- Key Laboratory of Flexible Electronics, Institute of Advanced Materials and School of Flexible Electronics (Future Technologies), Nanjing Tech University, 30 South Puzhu Road, Nanjing, Jiangsu 211816, China
- The 58th Research Institute of China Electronics Technology Group 217 Corporation, Wuxi, Jiangsu 214000, China
| | - Qiming Peng
- Key Laboratory of Flexible Electronics, Institute of Advanced Materials and School of Flexible Electronics (Future Technologies), Nanjing Tech University, 30 South Puzhu Road, Nanjing, Jiangsu 211816, China
| | - Wei Huang
- Key Laboratory of Flexible Electronics, Institute of Advanced Materials and School of Flexible Electronics (Future Technologies), Nanjing Tech University, 30 South Puzhu Road, Nanjing, Jiangsu 211816, China
- Strait Laboratory of Flexible Electronics, Fuzhou, Fujian 350117, China
| | - Jianpu Wang
- Key Laboratory of Flexible Electronics, Institute of Advanced Materials and School of Flexible Electronics (Future Technologies), Nanjing Tech University, 30 South Puzhu Road, Nanjing, Jiangsu 211816, China
- Changzhou University, 21 Middle Gehu Road, Changzhou 213164, China
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