Wide Band Gap Semiconductor from a Hidden 2D Incommensurate Graphene Phase

Dirac Fermion Cloning, Moiré Flat Bands, and Magic Lattice Constants in Epitaxial Monolayer Graphene

Tuning interactions between Dirac states in graphene has attracted enormous interest because it can modify the electronic spectrum of the 2D material, enhance electron correlations, and give rise to novel condensed-matter phases such as superconductors, Mott insulators, Wigner crystals, and quantum anomalous Hall insulators. Previous works predominantly focus on the flat band dispersion of coupled Dirac states from different twisted graphene layers. In this work, a new route to realizing flat band physics in monolayer graphene under a periodic modulation from substrates is proposed. Graphene/SiC heterostructure is taken as a prototypical example and it is demonstrated experimentally that the substrate modulation leads to Dirac fermion cloning and, consequently, the proximity of the two Dirac cones of monolayer graphene in momentum space. Theoretical modeling captures the cloning mechanism of the Dirac states and indicates that moiré flat bands can emerge at certain magic lattice constants of the substrate, specifically when the period of modulation becomes nearly commensurate with the ( 3   ×   3 ) R 30 o \[(\sqrt 3 \; \times \;\sqrt 3 )R{30^o}\] supercell of graphene. The results show that epitaxial single monolayer graphene on suitable substrates is a promising platform for exploring exotic many-body quantum phases arising from interactions between Dirac electrons.

Understanding adsorption geometry of organometallic molecules on graphite

To comprehensively investigate the adsorption geometries of organometallic molecules on graphene, Cp^*Ru⁺ fragments as an organometallic molecule is bound on highly oriented pyrolytic graphite and imaged at atomic resolution using scanning tunneling microscopy (STM) (Cp^* = pentamethylcyclopentadienyl). Atomic resolution imaging through STM shows that the Cp^*Ru⁺ fragments are localized above the hollow position of the hexagonal structure, and that the first graphene layer adsorbed with the fragments on the graphite redeveloped morphologically to minimize its geometric energy. For a better understanding of the adsorption site and molecular geometry, experimental results are compared with computed calculations for the graphene surface with Cp^*Ru⁺ fragments. These calculations show the adsorption geometries of the fragment on the graphene surface and the relationship between the geometric energy and molecular configuration. Our results provide the chemical anchoring geometry of molecules on the graphene surface, thereby imparting the theoretical background necessary for controlling the various properties of graphene in the future.

Surfactant-Mediated Epitaxial Growth of Single-Layer Graphene in an Unconventional Orientation on SiC

We report the use of a surfactant molecule during the epitaxy of graphene on SiC(0001) that leads to the growth in an unconventional orientation, namely R0° rotation with respect to the SiC lattice. It yields a very high-quality single-layer graphene with a uniform orientation with respect to the substrate, on the wafer scale. We find an increased quality and homogeneity compared to the approach based on the use of a preoriented template to induce the unconventional orientation. Using spot profile analysis low-energy electron diffraction, angle-resolved photoelectron spectroscopy, and the normal incidence x-ray standing wave technique, we assess the crystalline quality and coverage of the graphene layer. Combined with the presence of a covalently bound graphene layer in the conventional orientation underneath, our surfactant-mediated growth offers an ideal platform to prepare epitaxial twisted bilayer graphene via intercalation.

Growth, morphology and electronic properties of epitaxial graphene on vicinal Ir(332) surface

Superlattice induced minigaps in graphene band structure due to underlying one-dimensional nanostructuration has been demonstrated. A superperiodic potential can be introduced in graphene if the substrate is periodically structured. The successful preparation of a periodically nanostructured substrate in large scale can be obtained by carefully studying the electronic structure with a spatial averaging technique such as high-energy resolution photoemission. In this work, we present two different growth methods such as temperature programmed growth (TPG) and chemical vapor deposition (CVD) studied by scanning tunnelling microscopy (STM) and low energy electron diffraction (LEED). In both methods, we show that the original steps of Ir(332) have modified with (111) terraces and step bunching after graphene growth. Graphene grows continuously over the terrace and the step bunching areas. We observe that while TPG growth does not give rise to a well-defined surface periodicity required for opening a bandgap, the CVD growth does. By combining with angle-resolved photoemission spectroscopy (ARPES) measurements, we correlate the obtained spatial periodicity to observed band gap opening in graphene.

Self-assembled CeVO4/Au heterojunction nanocrystals for photothermal/photoacoustic bimodal imaging-guided phototherapy

Phototherapy, including photothermal therapy (PTT) and photodynamic therapy (PDT), has attracted great attention because it can effectively inhibit the proliferation and propagation of cancer cells. Recently, heterojunction nanomaterials have shown tremendous application value in the field of biological medicine. In this work, the CeVO4/Au heterojunction nanocrystals (NCs) are designed for photothermal/photoacoustic bimodal imaging-guided phototherapy. The as-synthesized hydrophobic oleic acid (OA)-stabilized CeVO4 nanosheets were modified with HS-PEG-OH for translating into hydrophilic ones, which can significantly improve their stability and biocompatibility. Subsequently, the plasmonic Au nanoparticles were in situ successfully deposited on the surface of HS-PEG-coated CeVO4 to form CeVO4/Au heterojunction NCs for improving the visible and near-infrared light absorption, which results in enhanced photothermal conversion performance and reactive oxygen species (ROS) generation capacity. Thus, the CeVO4/Au can cause more severe damage to cancer cells than pure CeVO4 under NIR laser irradiation. Also, CeVO4/Au can provide distinct tumor contrast by photothermal/photoacoustic bimodal bioimaging. Our results demonstrate that CeVO4/Au NCs could be used as an effective theranostic anticancer agent for near-infrared (NIR) light-mediated PTT and PDT.

Revealing interfacial disorder at the growth-front of thick many-layer epitaxial graphene on SiC: a complementary neutron and X-ray scattering investigation

Epitaxial graphene on SiC provides both an excellent source of high-quality graphene as well as an architecture to support its application. Although single-layer graphene on Si-face SiC has garnered extensive interest, many-layer graphene produced on C-face SiC could be significantly more robust for enabling applications. Little is known, however, about the structural properties related to the growth evolution at the buried interface for thick many-layer graphene. Using complementary X-ray scattering and neutron reflectivity as well as electron microscopy, we demonstrate that thick many-layer epitaxial graphene exhibits two vastly different length-scales of the buried interface roughness as a consequence of the Si sublimation that produces the graphene. Over long lateral length-scales the roughness is extremely large (hundreds of Å) and it varies proportionally to the number of graphene layers. In contrast, over much shorter lateral length-scales we observe an atomically abrupt interface with SiC terraces. Graphene near the buried interface exhibits a slightly expanded interlayer spacing (∼1%) and fluctuations of this spacing, indicating a tendency for disorder near the growth front. Nevertheless, Dirac cones are observed from the graphene while its domain size routinely reaches micron length-scales, indicating the persistence of high-quality graphene beginning just a short distance away from the buried interface. Discovering and reconciling the different length-scales of roughness by reflectivity was complicated by strong diffuse scattering and we provide a detailed discussion of how these difficulties were resolved. The insight from this analysis will be useful for other highly rough interfaces among broad classes of thin-film materials.

Self-assembled CeVO4/Ag nanohybrid as photoconversion agents with enhanced solar-driven photocatalysis and NIR-responsive photothermal/photodynamic synergistic therapy performance

The plasmonic cerium vanadate (CeVO₄) semiconductor and plasmonic silver (Ag) metal exhibit a localized surface plasmon resonance (LSPR) effect in the visible (Vis)-light region; however, weak absorption in the near-infrared (NIR) region restricts their environmental remediation and biomedical application. Herein, CeVO₄/Ag nanohybrids with self-assembled heterostructure and improved Vis/NIR light absorption were synthesized from CeVO₄ nanosheets and AgNO₃ solution, which could serve as potential solar-driven catalytic agents and near-infrared (NIR) light responsive anticancer agents. Oleic acid-stabilized CeVO₄ nanosheets were modified with the HS-PEG₁₀₀₀-OH by the thiol-ene click reaction and presented self-assembly morphology in aqueous solution due to hydrophobic-hydrophobic interactions. Sulfhydryl (-SH) groups provided stable sites for Ag⁺ ions on the surface of CeVO₄, and Ag⁺ ions could be directly reduced by Ce³⁺ ions to form CeVO₄/Ag heterojunction nanocrystals (NCs). Due to the higher absorption in the Vis/NIR light region than CeVO₄ nanosheets, CeVO₄/Ag NCs led to the improved solar light responsive photocatalytic degradation of organic dyes. Upon the exposure of these NCs to an 808 nm laser, CeVO₄/Ag NCs show high photothermal conversion efficiency, ROS generation ability and photoacoustic (PA) signal for implementing PA imaging-guided photothermal/photodynamic synergistic cancer therapy with better tumor inhibition effect.

Interfacial engineering in graphene bandgap

Graphene exhibits superior mechanical strength, high thermal conductivity, strong light-matter interactions, and, in particular, exceptional electronic properties. These merits make graphene an outstanding material for numerous potential applications. However, a graphene-based high-performance transistor, which is the most appealing application, has not yet been produced, which is mainly due to the absence of an intrinsic electronic bandgap in this material. Therefore, bandgap opening in graphene is urgently needed, and great efforts have been made regarding this topic over the past decade. In this review article, we summarise recent theoretical and experimental advances in interfacial engineering to achieve bandgap opening. These developments are divided into two categories: chemical engineering and physical engineering. Chemical engineering is usually destructive to the pristine graphene lattice via chemical functionalization, the introduction of defects, doping, chemical bonds with substrates, and quantum confinement; the latter largely maintains the atomic structure of graphene intact and includes the application of an external field, interactions with substrates, physical adsorption, strain, electron many-body effects and spin-orbit coupling. Although these pioneering works have not met all the requirements for electronic applications of graphene at once, they hold great promise in this direction and may eventually lead to future applications of graphene in semiconductor electronics and beyond.

Probing the dielectric response of the interfacial buffer layer in epitaxial graphene via optical spectroscopy

Monolayer epitaxial graphene (EG) is a suitable candidate for a variety of electronic applications. One advantage of EG growth on the Si face of SiC is that it develops as a single crystal, as does the layer below, referred to as the interfacial buffer layer (IBL), whose properties include an electronic band gap. Though much research has been conducted to learn about the electrical properties of the IBL, not nearly as much work has been reported on the optical properties of the IBL. In this work, we combine measurements from Mueller matrix ellipsometry, differential reflectance contrast, atomic force microscopy, and Raman spectroscopy, as well as calculations from Kramers-Kronig analyses and density functional theory (DFT), to determine the dielectric function of the IBL within the energy range of 1 eV to 8.5 eV.

Band Gap Opening Induced by the Structural Periodicity in Epitaxial Graphene Buffer Layer

The epitaxial graphene buffer layer on the Si face of hexagonal SiC shows a promising band gap, of which the precise origin remains to be understood. In this work, we correlate the electronic to the atomic structure of the buffer layer by combining angle resolved photoemission spectroscopy (ARPES), scanning tunneling microscopy (STM), and high-resolution scanning transmission electron microscopy (HR-STEM). We show that the band structure in the buffer has an electronic periodicity related to the structural periodicity observed in STM images and published X-ray diffraction. Our HR-STEM measurements show the bonding of the buffer layer to the SiC at specific locations separated by 1.5 nm. This is consistent with the quasi 6 × 6 periodic corrugation observed in the STM images. The distance between buffer C and SiC is 1.9 Å in the bonded regions and up to 2.8 Å in the decoupled regions, corresponding to a 0.9 Å corrugation of the buffer layer. The decoupled regions are sp² hybridized. Density functional tight binding (DFTB) calculations demonstrate the presence of a gap at the Dirac point everywhere in the buffer layer, even in the decoupled regions where the buffer layer has an atomic structure close to that of graphene. The surface periodicity also promotes band in the superperiodic Brillouin zone edges as seen by photoemission and confirmed by our calculations.