Cross-Plane Seebeck Coefficient Measurement of Misfit Layered Compounds (SnSe)n(TiSe2)n (n = 1,3,4,5)

Pathak A, Novikov D, Leitus G, Kaplan-Ashiri I, Kolíbal M, Enyashin AN, Houben L, Tenne R. Nanotubes from the Misfit Layered Compound (SmS)1.19TaS2: Atomic Structure, Charge Transfer, and Electrical Properties

Misfit layered compounds (MLCs) MX-TX₂, where M, T = metal atoms and X = S, Se, or Te, and their nanotubes are of significant interest due to their rich chemistry and unique quasi-1D structure. In particular, LnX-TX₂ (Ln = rare-earth atom) constitute a relatively large family of MLCs, from which nanotubes have been synthesized. The properties of MLCs can be tuned by the chemical and structural interplay between LnX and TX₂ sublayers and alloying of each of the Ln, T, and X elements. In order to engineer them to gain desirable performance, a detailed understanding of their complex structure is indispensable. MLC nanotubes are a relative newcomer and offer new opportunities. In particular, like WS₂ nanotubes before, the confinement of the free carriers in these quasi-1D nanostructures and their chiral nature offer intriguing physical behavior. High-resolution transmission electron microscopy in conjunction with a focused ion beam are engaged to study SmS-TaS₂ nanotubes and their cross-sections at the atomic scale. The atomic resolution images distinctly reveal that Ta is in trigonal prismatic coordination with S atoms in a hexagonal structure. Furthermore, the position of the sulfur atoms in both the SmS and the TaS₂ sublattices is revealed. X-ray photoelectron spectroscopy, electron energy loss spectroscopy, and X-ray absorption spectroscopy are carried out. These analyses conclude that charge transfer from the Sm to the Ta atoms leads to filling of the Ta 5d _{z ²} level, which is confirmed by density functional theory (DFT) calculations. Transport measurements show that the nanotubes are semimetallic with resistivities in the range of 10^-4 Ω·cm at room temperature, and magnetic susceptibility measurements show a superconducting transition at 4 K.

Quantum Sensing of Thermoelectric Power in Low-Dimensional Materials

Thermoelectric power, has been extensively studied in low-dimensional materials where quantum confinement and spin textures can largely modulate thermopower generation. In addition to classical and macroscopic values, thermopower also varies locally over a wide range of length scales, and is fundamentally linked to electron wave functions and phonon propagation. Various experimental methods for the quantum sensing of localized thermopower have been suggested, particularly based on scanning probe microscopy. Here, critical advances in the quantum sensing of thermopower are introduced, from the atomic to the several-hundred-nanometer scales, including the unique role of low-dimensionality, defects, spins, and relativistic effects for optimized power generation. Investigating the microscopic nature of thermopower in quantum materials can provide insights useful for the design of advanced materials for future thermoelectric applications. Quantum sensing techniques for thermopower can pave the way to practical and novel energy devices for a sustainable society.

Enhanced Low-Temperature Thermoelectric Performance in (PbSe)1+δ(VSe2)1 Heterostructures due to Highly Correlated Electrons in Charge Density Waves

We explore the effect of charge density wave (CDW) on the in-plane thermoelectric transport properties of (PbSe)_1+δ(VSe₂)₁ and (PbSe)_1+δ(VSe₂)₂ heterostructures. In (PbSe)_1+δ(VSe₂)₁ we observe an abrupt 86% increase in the Seebeck coefficient, 245% increase in the power factor, and a slight decrease in resistivity over the CDW transition. This behavior is not observed in (PbSe)_1+δ(VSe₂)₂ and is rather unusual compared to the general trend observed in other materials. The abrupt transition causes a deviation from the Mott relationship through correlated electron states. Raman spectra of the (PbSe)_1+δ(VSe₂)₁ material show the emergence of additional peaks below the CDW transition temperature associated with VSe₂ material. Temperature-dependent in-plane X-ray diffraction (XRD) spectra show a change in the in-plane thermal expansion of VSe₂ in (PbSe)_1+δ(VSe₂)₁ due to lattice distortion. The increase in the power factor and decrease in the resistivity due to CDW suggest a potential mechanism for enhancing the thermoelectric performance at the low temperature region.

Recent Progress of Two-Dimensional Thermoelectric Materials

Thermoelectric generators have attracted a wide research interest owing to their ability to directly convert heat into electrical power. Moreover, the thermoelectric properties of traditional inorganic and organic materials have been significantly improved over the past few decades. Among these compounds, layered two-dimensional (2D) materials, such as graphene, black phosphorus, transition metal dichalcogenides, IVA-VIA compounds, and MXenes, have generated a large research attention as a group of potentially high-performance thermoelectric materials. Due to their unique electronic, mechanical, thermal, and optoelectronic properties, thermoelectric devices based on such materials can be applied in a variety of applications. Herein, a comprehensive review on the development of 2D materials for thermoelectric applications, as well as theoretical simulations and experimental preparation, is presented. In addition, nanodevice and new applications of 2D thermoelectric materials are also introduced. At last, current challenges are discussed and several prospects in this field are proposed.

Thermionic transport across gold-graphene-WSe2 van der Waals heterostructures

Solid-state thermionic devices based on van der Waals structures were proposed for nanoscale thermal to electrical energy conversion and integrated electronic cooling applications. We study thermionic cooling across gold-graphene-WSe₂-graphene-gold structures computationally and experimentally. Graphene and WSe₂ layers were stacked, followed by deposition of gold contacts. The I-V curve of the structure suggests near-ohmic contact. A hybrid technique that combines thermoreflectance and cooling curve measurements is used to extract the device ZT. The measured Seebeck coefficient, thermal and electrical conductance, and ZT values at room temperatures are in agreement with the theoretical predictions using first-principles calculations combined with real-space Green's function formalism. This work lays the foundation for development of efficient thermionic devices.

Superlattices based on van der Waals 2D materials

Two-dimensional (2D) materials exhibit a number of improved mechanical, optical, and electronic properties compared to their bulk counterparts. The absence of dangling bonds in the cleaved surfaces of these materials allows combining different 2D materials into van der Waals heterostructures to fabricate p-n junctions, photodetectors, and 2D-2D ohmic contacts that show unexpected performances. These intriguing results are regularly summarized in comprehensive reviews. A strategy to tailor their properties even further and to observe novel quantum phenomena consists in the fabrication of superlattices whose unit cell is formed either by two dissimilar 2D materials or by a 2D material subjected to a periodic perturbation, each component contributing with different characteristics. Furthermore, in a 2D material-based superlattice, the interlayer interaction between the layers mediated by van der Waals forces constitutes a key parameter to tune the global properties of the superlattice. The above-mentioned factors reflect the potential to devise countless combinations of van der Waals 2D material-based superlattices. In the present feature article, we explain in detail the state-of-the-art of 2D material-based superlattices and describe the different methods to fabricate them, classified as vertical stacking, intercalation with atoms or molecules, moiré patterning, strain engineering and lithographic design. We also aim to highlight some of the specific applications of each type of superlattices.

Ultrahigh thermal isolation across heterogeneously layered two-dimensional materials

Heterogeneous integration of nanomaterials has enabled advanced electronics and photonics applications. However, similar progress has been challenging for thermal applications, in part due to shorter wavelengths of heat carriers (phonons) compared to electrons and photons. Here, we demonstrate unusually high thermal isolation across ultrathin heterostructures, achieved by layering atomically thin two-dimensional (2D) materials. We realize artificial stacks of monolayer graphene, MoS₂, and WSe₂ with thermal resistance greater than 100 times thicker SiO₂ and effective thermal conductivity lower than air at room temperature. Using Raman thermometry, we simultaneously identify the thermal resistance between any 2D monolayers in the stack. Ultrahigh thermal isolation is achieved through the mismatch in mass density and phonon density of states between the 2D layers. These thermal metamaterials are an example in the emerging field of phononics and could find applications where ultrathin thermal insulation is desired, in thermal energy harvesting, or for routing heat in ultracompact geometries.

Ultralow thermal conductivity of turbostratically disordered MoSe2 ultra-thin films and implications for heterostructures

Films containing 8, 16, 24, 32 and 64 MoSe₂ layers were synthesized using the modulated elemental reactants method. X-ray reflectivity patterns showed that the annealed films were the targeted number of MoSe₂ layers thick with atomically smooth interfaces. In-plane x-ray diffraction (XRD) scans contained only hk0 reflections for crystalline MoSe₂ monolayers. Specular XRD patterns contained only 00l reflections, also indicating that the hk0 plane of the MoSe₂ layers are parallel to the substrate. Both XRD and electron microscopy techniques indicated that the hk0 planes are rotationally disordered with respect to one another, with all orientations equally probable for large areas. The rotational disorder between MoSe₂ layers is present even when analyzed spots are within 10 nm of one another. Cross-plane thermal conductivities of 0.07-0.09 W m^-1 K^-1 were measured by time domain thermoreflectance, with the thinnest films exhibiting the lowest conductivity. The structural analysis suggests that the ultralow thermal conductivity is a consequence of rotational disorder, which increases the separation between MoSe₂ layers. The bonding environment of the Se atoms also becomes significantly distorted from C _3v symmetry due to the rotational disorder between layers. This structural disorder efficiently reduces the group velocity of the transverse phonon modes but not that of longitudinal modes. Since rotational disorder between adjacent layers in heterostructures is expected if the constituents have incommensurate lattices, this study indicates that these heterostructures will have very low cross-plane thermal conductivity.

Phonon-driven electron scattering and magnetothermoelectric effect in two-dimensional tin selenide

The bulk tin selenide (SnSe) is the best thermoelectric material currently with the highest figure-of-merit due to strong phonon-phonon interactions. We investigate the effect of electron-phonon coupling (EPC) on the transport properties of a two-dimensional (2D) SnSe sheet. We demonstrate that EPC plays a key role in the scattering rate when the constant relaxation time approximation is deficient. The EPC strength is especially large in contrast to that of pristine graphene. The scattering rate depends sensitively on the system temperatures and the carrier densities when the Fermi energy approaches the band edge. We also investigate the magnetothermoelectric effect of the 2D SnSe. It is found that at low temperatures there is enormous magnetoelectrical resistivity and magnetothermal resistivity above 200%, suggesting possible potential applications in device design. Our results agree qualitatively well with the experimental data.