1
|
Chen J, Xu J, Kong L, Shi S, Xu J, Gao S, Zhang X, Li L. Self-powered SnS x/TiO 2 photodetectors (PDs) with dual-band binary response and the applications in imaging and light-encrypted logic gates. J Colloid Interface Sci 2024; 663:336-344. [PMID: 38412719 DOI: 10.1016/j.jcis.2024.02.154] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/03/2023] [Revised: 01/26/2024] [Accepted: 02/19/2024] [Indexed: 02/29/2024]
Abstract
In this work, we report the design and fabrication of self-powered binary response PDs based on II-type heterostructures consisting of SnSx nanoflakes (NFs) and rutile TiO2 nanorod arrays (NRs). The TiO2 NRs effectively block light with wavelengths below 400 nm from reaching SnSx. Under 385 nm light, the photoelectrons in TiO2 recombine with holes in SnSx at the interface due to the energy band bending, resulting in a positive photocurrent. Under 410 nm light, the photoelectrons in SnSx and the photogenerated holes in TiO2 accumulate at the interface, overcoming the interfacial potential barriers induced by the higher Fermi levels of SnSx and inducing a negative photocurrent. Based on the bipolar response, the dual-band imaging capability without external filters and the light-encrypted OR, AND, and NOT logic gates using a single device are demonstrated. This work provides a blueprint for the development of multifunctional self-powered PDs that can simplify system architecture, reduce the energy consumption, and improve accuracy for applications, such as visual systems, light-controlled logic circuits, and encrypted optical communications.
Collapse
Affiliation(s)
- Jing Chen
- School of Materials Science and Engineering, Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, and Tianjin Key Laboratory for Photoelectric Materials and Devices, Tianjin University of Technology, Tianjin 300384, China
| | - Jianping Xu
- Tianjin Key Laboratory of Quantum Optics and Intelligent Photonics, School of Science, Tianjin University of Technology, Tianjin 300384, China.
| | - Lina Kong
- School of Materials Science and Engineering, Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, and Tianjin Key Laboratory for Photoelectric Materials and Devices, Tianjin University of Technology, Tianjin 300384, China.
| | - Shaobo Shi
- School of Science, Tianjin University of Technology and Education, Tianjin 300222, China
| | - Jianghua Xu
- School of Materials Science and Engineering, Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, and Tianjin Key Laboratory for Photoelectric Materials and Devices, Tianjin University of Technology, Tianjin 300384, China
| | - Songyao Gao
- School of Materials Science and Engineering, Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, and Tianjin Key Laboratory for Photoelectric Materials and Devices, Tianjin University of Technology, Tianjin 300384, China; Tianjin Key Laboratory of Quantum Optics and Intelligent Photonics, School of Science, Tianjin University of Technology, Tianjin 300384, China
| | - Xiaosong Zhang
- School of Materials Science and Engineering, Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, and Tianjin Key Laboratory for Photoelectric Materials and Devices, Tianjin University of Technology, Tianjin 300384, China
| | - Lan Li
- School of Materials Science and Engineering, Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, and Tianjin Key Laboratory for Photoelectric Materials and Devices, Tianjin University of Technology, Tianjin 300384, China
| |
Collapse
|
2
|
Wang J, He L, Zhang Y, Nong H, Li S, Wu Q, Tan J, Liu B. Locally Strained 2D Materials: Preparation, Properties, and Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2314145. [PMID: 38339886 DOI: 10.1002/adma.202314145] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/25/2023] [Revised: 01/28/2024] [Indexed: 02/12/2024]
Abstract
2D materials are promising for strain engineering due to their atomic thickness and exceptional mechanical properties. In particular, non-uniform and localized strain can be induced in 2D materials by generating out-of-plane deformations, resulting in novel phenomena and properties, as witnessed in recent years. Therefore, the locally strained 2D materials are of great value for both fundamental studies and practical applications. This review discusses techniques for introducing local strains to 2D materials, and their feasibility, advantages, and challenges. Then, the unique effects and properties that arise from local strain are explored. The representative applications based on locally strained 2D materials are illustrated, including memristor, single photon emitter, and photodetector. Finally, concluding remarks on the challenges and opportunities in the emerging field of locally strained 2D materials are provided.
Collapse
Affiliation(s)
- Jingwei Wang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Liqiong He
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Yunhao Zhang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Huiyu Nong
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Shengnan Li
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Qinke Wu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Junyang Tan
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Bilu Liu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| |
Collapse
|
3
|
Ji Z, Liu X, Song Y, Zhong Y, Wang D, Chen B, Fang M, Nie X, Hou J, Ma J, Ma H, Xu X, Yi Z, Xu X. Space-Confined seeding and growth of ordered arrays of TiO2 hierarchical nanostructures. J Colloid Interface Sci 2023; 630:436-443. [DOI: 10.1016/j.jcis.2022.10.125] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/22/2022] [Revised: 10/08/2022] [Accepted: 10/24/2022] [Indexed: 11/06/2022]
|
4
|
Zha L, Tian J, Lu J, Zhang Y, Wei X, Cao J. Electronic properties of the one-dimensional interfaces in two dimensional lateral (MoS2)m/(Mo2S3)m heterostructures. Chem Phys Lett 2021. [DOI: 10.1016/j.cplett.2021.138761] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/26/2022]
|
5
|
Wang X, Chen Q, Shen C, Dai J, Zhu C, Zhang J, Wang Z, Song Q, Wang L, Li H, Wang Q, Liu Z, Luo Z, Huang X, Huang W. Spatially Controlled Preparation of Layered Metallic-Semiconducting Metal Chalcogenide Heterostructures. ACS NANO 2021; 15:12171-12179. [PMID: 34269058 DOI: 10.1021/acsnano.1c03688] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Spatially controlled preparation of heterostructures composed of layered materials is important in achieving interesting properties. Although vapor-phased deposition methods can prepare vertical and lateral heterostructures, liquid-phased methods, which can enable scalable production and further solution processes, have shown limited controllability. Herein, we demonstrate by using wet chemical methods that metallic Sn0.5Mo0.5S2 nanosheets can be deposited epitaxially on the edges of semiconducting SnS2 nanoplates to form SnS2/Sn0.5Mo0.5S2 lateral heterostructures or coated on both the edges and basal surfaces of SnS2 to give SnS2@Sn0.5Mo0.5S2 core@shell heterostructures. They also showed good light-to-heat conversion ability due to the metallic property of Sn0.5Mo0.5S2. In particular, the core@shell heterostructure showed a higher photothermal conversion efficiency than the lateral counterpart, largely due to its randomly oriented and polycrystalline Sn0.5Mo0.5S2 layers with larger interfacing area for multiple internal light scattering.
Collapse
Affiliation(s)
- Xiaoshan Wang
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an 710072, China
- Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211800, China
| | - Qian Chen
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an 710072, China
| | - Chuang Shen
- Key Laboratory for Organic Electronic & Information Displays (KLOEID) and Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing 210023, China
| | - Jie Dai
- Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211800, China
| | - Chao Zhu
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 640260, Singapore
| | - Jinyan Zhang
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an 710072, China
| | - Zhiwei Wang
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an 710072, China
- Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211800, China
| | - Qingsong Song
- Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211800, China
| | - Lin Wang
- Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211800, China
| | - Hai Li
- Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211800, China
| | - Qiang Wang
- School of Chemistry and Molecular Engineering, Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 640260, Singapore
| | - Zhimin Luo
- Key Laboratory for Organic Electronic & Information Displays (KLOEID) and Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing 210023, China
| | - Xiao Huang
- Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211800, China
| | - Wei Huang
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an 710072, China
- Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211800, China
| |
Collapse
|
6
|
Qiao L, Yu C, Sun R, Tao Y, Li Y, Yan Y. Three-dimensional magnetic stannic disulfide composites for the solid-phase extraction of sulfonamide antibiotics. J Chromatogr A 2021; 1652:462372. [PMID: 34246058 DOI: 10.1016/j.chroma.2021.462372] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/28/2021] [Revised: 06/19/2021] [Accepted: 06/24/2021] [Indexed: 01/06/2023]
Abstract
In the present work, three-dimensional (3D) and flower-like SnS2 materials were coated on the surface of Fe3O4@nSiO2 through an in-situ growth method. The 3D architecture could avoid the accumulation and reaggregation with better stability and was beneficial for the exposure of more active sites. The prepared magnetic SnS2 composites were used for the enrichment of sulfonamide antibiotics (SAs), and various experimental parameters affecting the extraction efficiency were investigated. The results showed the equilibrium of extraction and desorption towards target SAs could be reached within 3 min by using the Fe3O4@nSiO2-SnS2 composites. Under optimized conditions, the proposed approach possessed good linearity in the range of 0.1-200 ng·mL-1 with correlation coefficients r2 above 0.9964 and low limits of detection (LODs) from 0.025 to 0.250 ng·mL-1 for the five target SAs. Moreover, good repeatability was obtained with the intra-day and inter-day precision in terms of relative standard deviations (RSDs) within 1.1%-10.8% and 7.4%-13.1%, and the recoveries under three spiked concentrations were between 81.8% and 119.7% with adequate accuracy. Different samples including tap water, milk and honey were collected for magnetic solid-phase extraction and determination of target SAs by using the obtained Fe3O4@nSiO2-SnS2 composites to demonstrate the utility. All the results indicated that the proposed method had great potential for effective preconcentration and determination of SAs in complex samples.
Collapse
Affiliation(s)
- Lizhen Qiao
- State Key Laboratory of Fine Chemicals, Dalian University of Technology, Dalian 116023, China; School of Chemical Engineering, Dalian University of Technology, Panjin 124221, China.
| | - Chunmei Yu
- State Key Laboratory of Fine Chemicals, Dalian University of Technology, Dalian 116023, China; School of Chemical Engineering, Dalian University of Technology, Panjin 124221, China
| | - Ruiting Sun
- State Key Laboratory of Fine Chemicals, Dalian University of Technology, Dalian 116023, China; School of Chemical Engineering, Dalian University of Technology, Panjin 124221, China
| | - Yuan Tao
- State Key Laboratory of Fine Chemicals, Dalian University of Technology, Dalian 116023, China; School of Chemical Engineering, Dalian University of Technology, Panjin 124221, China
| | - Yumeng Li
- State Key Laboratory of Fine Chemicals, Dalian University of Technology, Dalian 116023, China; School of Chemical Engineering, Dalian University of Technology, Panjin 124221, China
| | - Yang Yan
- State Key Laboratory of Fine Chemicals, Dalian University of Technology, Dalian 116023, China; School of Chemical Engineering, Dalian University of Technology, Panjin 124221, China.
| |
Collapse
|
7
|
Wang J, Han M, Wang Q, Ji Y, Zhang X, Shi R, Wu Z, Zhang L, Amini A, Guo L, Wang N, Lin J, Cheng C. Strained Epitaxy of Monolayer Transition Metal Dichalcogenides for Wrinkle Arrays. ACS NANO 2021; 15:6633-6644. [PMID: 33819027 DOI: 10.1021/acsnano.0c09983] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Wrinkling two-dimensional (2D) transition metal dichalcogenides (TMDCs) provides a mechanism to adjust the physical and chemical properties as per need. Traditionally, TMDCs wrinkles achieved by transferring exfoliated materials on prestretched polymer suffer from poor control and limited sample area, which significantly hinders desirable applications. Herein, we fabricate large-area monolayer TMDCs wrinkle arrays directly on the m-quartz substrate using strained epitaxy. The uniaxial thermal expansion coefficient mismatch between the substrate and TMDCs materials enables the generation of large uniaxial thermal strain. By quenching the TMDCs after growth, this uniaxial thermal strain can be quickly released as a form of wrinkle arrays along the [0001]quartz direction. Using WS2 as a model system, the size of as-grown wrinkles can be finely modulated within sub-100 nm by changing the quenching temperature. These WS2 wrinkles can be locally folded and form various multilayer structures with odd layer numbers during the transfer process. Besides, the corrugated structures in WS2 wrinkles induce significant changes to optical properties including anisotropic Raman response, enhanced photoluminescence, and second harmonic generation emissions. Furthermore, these wrinkle arrays exhibit enhanced chemical reactivity that can be selectively engineered to ribbon arrays with improved electrocatalytic performance. The developed strategy of strained epitaxy here should enable flexibility in the design of more sophisticated 2D-based structures, offering a simple but effective way toward the modulation of properties with enhanced performances.
Collapse
Affiliation(s)
- Jingwei Wang
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
- Department of Physics, The Hong Kong University of Science and Technology (HKUST), Clear Water Bay, Kowloon, Hong Kong 999077, P. R. China
| | - Mengjiao Han
- Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
| | - Qun Wang
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
| | - Yaqiang Ji
- Department of Mechanical and Energy Engineering, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
| | - Xian Zhang
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
| | - Run Shi
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
- Department of Physics, The Hong Kong University of Science and Technology (HKUST), Clear Water Bay, Kowloon, Hong Kong 999077, P. R. China
| | - Zefei Wu
- Department of Physics, The Hong Kong University of Science and Technology (HKUST), Clear Water Bay, Kowloon, Hong Kong 999077, P. R. China
| | - Liang Zhang
- Department of Mechanical and Energy Engineering, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
| | - Abbas Amini
- Center for Infrastructure Engineering, Western Sydney University, Kingswood, NSW 2751, Australia
| | - Liang Guo
- Department of Mechanical and Energy Engineering, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
| | - Ning Wang
- Department of Physics, The Hong Kong University of Science and Technology (HKUST), Clear Water Bay, Kowloon, Hong Kong 999077, P. R. China
| | - Junhao Lin
- Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
| | - Chun Cheng
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
- Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology), Ministry of Education, Shenzhen 518055, China
| |
Collapse
|
8
|
Kim JM, Cho C, Hsieh EY, Nam S. Heterogeneous deformation of two-dimensional materials for emerging functionalities. JOURNAL OF MATERIALS RESEARCH 2020; 35:1369-1385. [PMID: 32572304 PMCID: PMC7306914 DOI: 10.1557/jmr.2020.34] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Atomically thin 2D materials exhibit strong intralayer covalent bonding and weak interlayer van der Waals interactions, offering unique high in-plane strength and out-of-plane flexibility. While atom-thick nature of 2D materials may cause uncontrolled intrinsic/extrinsic deformation in multiple length scales, it also provides new opportunities for exploring coupling between heterogeneous deformations and emerging functionalities in controllable and scalable ways for electronic, optical, and optoelectronic applications. In this review, we discuss (i) the mechanical characteristics of 2D materials, (ii) uncontrolled inherent deformation and extrinsic heterogeneity present in 2D materials, (iii) experimental strategies for controlled heterogeneous deformation of 2D materials, (iv) 3D structure-induced novel functionalities via crumple/wrinkle structure or kirigami structures, and (v) heterogeneous strain-induced emerging functionalities in exciton and phase engineering. Overall, heterogeneous deformation offers unique advantages for 2D materials research by enabling spatial tunability of 2D materials' interactions with photons, electrons, and molecules in a programmable and controlled manner.
Collapse
Affiliation(s)
- Jin Myung Kim
- Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA
| | - Chullhee Cho
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA
| | - Ezekiel Y. Hsieh
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA
| | - SungWoo Nam
- Department of Materials Science and Engineering, Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA
| |
Collapse
|
9
|
Li F, Shen T, Wang C, Zhang Y, Qi J, Zhang H. Recent Advances in Strain-Induced Piezoelectric and Piezoresistive Effect-Engineered 2D Semiconductors for Adaptive Electronics and Optoelectronics. NANO-MICRO LETTERS 2020; 12:106. [PMID: 34138113 PMCID: PMC7770727 DOI: 10.1007/s40820-020-00439-9] [Citation(s) in RCA: 29] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/07/2020] [Accepted: 03/20/2020] [Indexed: 05/07/2023]
Abstract
The development of two-dimensional (2D) semiconductors has attracted widespread attentions in the scientific community and industry due to their ultra-thin thickness, unique structure, excellent optoelectronic properties and novel physics. The excellent flexibility and outstanding mechanical strength of 2D semiconductors provide opportunities for fabricated strain-sensitive devices and utilized strain tuning their electronic and optic-electric performance. The strain-engineered one-dimensional materials have been well investigated, while there is a long way to go for 2D semiconductors. In this review, starting with the fundamental theories of piezoelectric and piezoresistive effect resulted by strain, following we reviewed the recent simulation works of strain engineering in novel 2D semiconductors, such as Janus 2D and 2D-Xene structures. Moreover, recent advances in experimental observation of strain tuning PL spectra and transport behavior of 2D semiconductors are summarized. Furthermore, the applications of strain-engineered 2D semiconductors in sensors, photodetectors and nanogenerators are also highlighted. At last, we in-depth discussed future research directions of strain-engineered 2D semiconductor and related electronics and optoelectronics device applications.
Collapse
Affiliation(s)
- Feng Li
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Tao Shen
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, People's Republic of China
| | - Cong Wang
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Yupeng Zhang
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Junjie Qi
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, People's Republic of China.
| | - Han Zhang
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, People's Republic of China.
| |
Collapse
|
10
|
Berry J, Ristić S, Zhou S, Park J, Srolovitz DJ. The MoSeS dynamic omnigami paradigm for smart shape and composition programmable 2D materials. Nat Commun 2019; 10:5210. [PMID: 31729363 PMCID: PMC6858317 DOI: 10.1038/s41467-019-12945-5] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/05/2019] [Accepted: 09/27/2019] [Indexed: 12/15/2022] Open
Abstract
The properties of 2D materials can be broadly tuned through alloying and phase and strain engineering. Shape programmable materials offer tremendous functionality, but sub-micron objects are typically unachievable with conventional thin films. Here we propose a new approach, combining phase/strain engineering with shape programming, to form 3D objects by patterned alloying of 2D transition metal dichalcogenide (TMD) monolayers. Conjugately, monolayers can be compositionally patterned using non-flat substrates. For concreteness, we focus on the TMD alloy MoSe[Formula: see text]S[Formula: see text]; i.e., MoSeS. These 2D materials down-scale shape/composition programming to nanoscale objects/patterns, provide control of both bending and stretching deformations, are reversibly actuatable with electric fields, and possess the extraordinary and diverse properties of TMDs. Utilizing a first principles-informed continuum model, we demonstrate how a variety of shapes/composition patterns can be programmed and reversibly modulated across length scales. The vast space of possible designs and scales enables novel material properties and thus new applications spanning flexible electronics/optics, catalysis, responsive coatings, and soft robotics.
Collapse
Affiliation(s)
- Joel Berry
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA.,Materials Science Division, Lawrence Livermore National Laboratory, Livermore, CA, 94550, USA
| | - Simeon Ristić
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Songsong Zhou
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Jiwoong Park
- Department of Chemistry, Institute for Molecular Engineering, James Franck Institute, University of Chicago, Chicago, IL, USA
| | - David J Srolovitz
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA. .,Department of Mechanical Engineering and Applied Mechanics, University of Pennsylvania, Philadelphia, PA, 19104, USA. .,Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, SAR, P. R. China.
| |
Collapse
|
11
|
Dai Z, Liu L, Zhang Z. Strain Engineering of 2D Materials: Issues and Opportunities at the Interface. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1805417. [PMID: 30650204 DOI: 10.1002/adma.201805417] [Citation(s) in RCA: 196] [Impact Index Per Article: 39.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/19/2018] [Revised: 10/04/2018] [Indexed: 05/23/2023]
Abstract
Triggered by the growing needs of developing semiconductor devices at ever-decreasing scales, strain engineering of 2D materials has recently seen a surge of interest. The goal of this principle is to exploit mechanical strain to tune the electronic and photonic performance of 2D materials and to ultimately achieve high-performance 2D-material-based devices. Although strain engineering has been well studied for traditional semiconductor materials and is now routinely used in their manufacturing, recent experiments on strain engineering of 2D materials have shown new opportunities for fundamental physics and exciting applications, along with new challenges, due to the atomic nature of 2D materials. Here, recent advances in the application of mechanical strain into 2D materials are reviewed. These developments are categorized by the deformation modes of the 2D material-substrate system: in-plane mode and out-of-plane mode. Recent state-of-the-art characterization of the interface mechanics for these 2D material-substrate systems is also summarized. These advances highlight how the strain or strain-coupled applications of 2D materials rely on the interfacial properties, essentially shear and adhesion, and finally offer direct guidelines for deterministic design of mechanical strains into 2D materials for ultrathin semiconductor applications.
Collapse
Affiliation(s)
- Zhaohe Dai
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
| | - Luqi Liu
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
| | - Zhong Zhang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
| |
Collapse
|