1
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Chebl M, He X, Yang DS. Cross-examination of photoinitiated carrier and structural dynamics of black phosphorus at elevated fluences. J Chem Phys 2024; 160:124703. [PMID: 38516973 DOI: 10.1063/5.0193613] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/22/2023] [Accepted: 03/06/2024] [Indexed: 03/23/2024] Open
Abstract
Revived attention in black phosphorus (bP) has been tremendous in the past decade. While many photoinitiated experiments have been conducted, a cross-examination of bP's photocarrier and structural dynamics is still lacking. In this article, we provide such analysis by examining time-resolved data acquired using optical transient reflectivity and reflection ultrafast electron diffraction, two complementary methods under the same experimental conditions. At elevated excitation fluences, we find that more than 90% of the photoinjected carriers are annihilated within the first picosecond (ps) and transfer their energy to phonons in a nonthermal, anisotropic fashion. Electronically, the remaining carrier density around the band edges induces a significant interaction that leads to an interlayer lattice contraction in a few ps but soon diminishes as a result of the continuing loss of carriers. Structurally, phonon-phonon scattering redistributes the energy in the lattice and results in the generation of out-of-plane coherent acoustic phonons and thermal lattice expansion. Their onset times at ∼6 ps are found to be in good agreement. Later, a thermalized quasi-equilibrium state is reached following a period of about 40-50 ps. Hence, we propose a picture with five temporal regimes for bP's photodynamics.
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Affiliation(s)
- Mazhar Chebl
- Department of Chemistry, University of Houston, Houston, Texas 77204, USA
| | - Xing He
- Department of Chemistry, University of Houston, Houston, Texas 77204, USA
| | - Ding-Shyue Yang
- Department of Chemistry, University of Houston, Houston, Texas 77204, USA
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2
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Tang L, Zou J. p-Type Two-Dimensional Semiconductors: From Materials Preparation to Electronic Applications. NANO-MICRO LETTERS 2023; 15:230. [PMID: 37848621 PMCID: PMC10582003 DOI: 10.1007/s40820-023-01211-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/04/2023] [Accepted: 09/04/2023] [Indexed: 10/19/2023]
Abstract
Two-dimensional (2D) materials are regarded as promising candidates in many applications, including electronics and optoelectronics, because of their superior properties, including atomic-level thickness, tunable bandgaps, large specific surface area, and high carrier mobility. In order to bring 2D materials from the laboratory to industrialized applications, materials preparation is the first prerequisite. Compared to the n-type analogs, the family of p-type 2D semiconductors is relatively small, which limits the broad integration of 2D semiconductors in practical applications such as complementary logic circuits. So far, many efforts have been made in the preparation of p-type 2D semiconductors. In this review, we overview recent progresses achieved in the preparation of p-type 2D semiconductors and highlight some promising methods to realize their controllable preparation by following both the top-down and bottom-up strategies. Then, we summarize some significant application of p-type 2D semiconductors in electronic and optoelectronic devices and their superiorities. In end, we conclude the challenges existed in this field and propose the potential opportunities in aspects from the discovery of novel p-type 2D semiconductors, their controlled mass preparation, compatible engineering with silicon production line, high-κ dielectric materials, to integration and applications of p-type 2D semiconductors and their heterostructures in electronic and optoelectronic devices. Overall, we believe that this review will guide the design of preparation systems to fulfill the controllable growth of p-type 2D semiconductors with high quality and thus lay the foundations for their potential application in electronics and optoelectronics.
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Affiliation(s)
- Lei Tang
- Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, People's Republic of China.
| | - Jingyun Zou
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, 215009, Jiangsu, People's Republic of China.
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3
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Zhang M, Yang L, Wu X, Wang J. Black Phosphorus for Photonic Integrated Circuits. RESEARCH (WASHINGTON, D.C.) 2023; 6:0206. [PMID: 37593339 PMCID: PMC10430873 DOI: 10.34133/research.0206] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/24/2023] [Accepted: 07/19/2023] [Indexed: 08/19/2023]
Abstract
Black phosphorus gives several advantages and complementarities over other two-dimensional materials. It has drawn extensive interest owing to its relatively high carrier mobility, wide tunable bandgap, and in-plane anisotropy in recent years. This manuscript briefly reviews the structure and physical properties of black phosphorus and targets on black phosphorus for photonic integrated circuits. Some of the applications are discussed including photodetection, optical modulation, light emission, and polarization conversion. Corresponding recent progresses, associated challenges, and future potentials are covered.
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Affiliation(s)
| | | | | | - Junjia Wang
- National Research Center for Optical Sensors/communications Integrated Networks, School of Electronic Science and Engineering,
Southeast University, 2 Sipailou, Nanjing 210096, China
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4
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Higashitarumizu N, Uddin SZ, Weinberg D, Azar NS, Reaz Rahman IKM, Wang V, Crozier KB, Rabani E, Javey A. Anomalous thickness dependence of photoluminescence quantum yield in black phosphorous. NATURE NANOTECHNOLOGY 2023; 18:507-513. [PMID: 36879126 DOI: 10.1038/s41565-023-01335-0] [Citation(s) in RCA: 9] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2022] [Accepted: 01/31/2023] [Indexed: 05/21/2023]
Abstract
Black phosphorus has emerged as a unique optoelectronic material, exhibiting tunable and high device performance from mid-infrared to visible wavelengths. Understanding the photophysics of this system is of interest to further advance device technologies based on it. Here we report the thickness dependence of the photoluminescence quantum yield at room temperature in black phosphorus while measuring the various radiative and non-radiative recombination rates. As the thickness decreases from bulk to ~4 nm, a drop in the photoluminescence quantum yield is initially observed due to enhanced surface carrier recombination, followed by an unexpectedly sharp increase in photoluminescence quantum yield with further thickness scaling, with an average value of ~30% for monolayers. This trend arises from the free-carrier to excitonic transition in black phosphorus thin films, and differs from the behaviour of conventional semiconductors, where photoluminescence quantum yield monotonically deteriorates with decreasing thickness. Furthermore, we find that the surface carrier recombination velocity of black phosphorus is two orders of magnitude lower than the lowest value reported in the literature for any semiconductor with or without passivation; this is due to the presence of self-terminated surface bonds in black phosphorus.
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Affiliation(s)
- Naoki Higashitarumizu
- Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Shiekh Zia Uddin
- Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Daniel Weinberg
- Department of Chemistry, University of California, Berkeley, Berkeley, CA, USA
| | | | - I K M Reaz Rahman
- Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Vivian Wang
- Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Kenneth B Crozier
- School of Physics, University of Melbourne, Melbourne, Victoria, Australia
- Department of Electrical and Electronic Engineering, University of Melbourne, Parkville, Victoria, Australia
- Australian Research Council (ARC) Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Melbourne, Parkville, Victoria, Australia
| | - Eran Rabani
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Department of Chemistry, University of California, Berkeley, Berkeley, CA, USA
- The Raymond and Beverly Sackler Center of Computational Molecular and Materials Science, Tel Aviv University, Tel Aviv, Israel
| | - Ali Javey
- Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA, USA.
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
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5
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Firsov DD, Khakhulin SA, Komkov OS. Fourier Transform Infrared Reflection Anisotropy Spectroscopy of Semiconductor Crystals and Structures: Development and Application in the Mid-Infrared. APPLIED SPECTROSCOPY 2023; 77:470-481. [PMID: 36635615 DOI: 10.1177/00037028231153421] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/26/2023]
Abstract
A new method of reflection anisotropy spectroscopy (RAS) with increased mid-IR efficiency owing to the use of a Fourier transform infrared (FT-IR) spectrometer has been developed. An optical setup was implemented using a photoelastic modulator (PEM) to modulate the direction of linear polarization of the probe beam originating from the Michelson interferometer. An original measurement algorithm was proposed to eliminate the influence of spectral inhomogeneity of the PEM efficiency on the obtained spectra using appropriate calibration. It was shown that to preserve the sign of the RAS signal, it is necessary to use a specialized procedure for phase correction of the interferogram registered by the FT-IR spectrometer. In the visible range, good agreement was confirmed between the obtained reflection anisotropy (RA) spectra of a semiconductor crystal and the results of independent measurements using a conventional diffraction-grating spectrometer-based setup. The RA spectrum of a III-V semiconductor heterostructure in the mid-infrared range (λ up to 8 µm) is demonstrated. Application of the developed FT-IR RAS method to layered black phosphorus has enabled characterization of anisotropic interband transitions in this graphene-like semiconductor crystal.
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Affiliation(s)
- Dmitrii D Firsov
- Department of Micro- and nanoelectronics, Saint-Petersburg Electrotechnical University "LETI", Saint Petersburg, Russia
| | - Semyon A Khakhulin
- Department of Micro- and nanoelectronics, Saint-Petersburg Electrotechnical University "LETI", Saint Petersburg, Russia
| | - Oleg S Komkov
- Department of Micro- and nanoelectronics, Saint-Petersburg Electrotechnical University "LETI", Saint Petersburg, Russia
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6
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Lung QND, Chu RJ, Kim Y, Laryn T, Madarang MA, Kovalchuk O, Song YW, Lee IH, Choi C, Choi WJ, Jung D. Graphene/III-V Quantum Dot Mixed-Dimensional Heterostructure for Enhanced Radiative Recombinations via Hole Carrier Transfer. NANO LETTERS 2023; 23:3344-3351. [PMID: 37027572 DOI: 10.1021/acs.nanolett.3c00321] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Fabrication of high quantum efficiency nanoscale device is challenging due to increased carrier loss at surface. Low dimensional materials such 0D quantum dots and 2D materials have been widely studied to mitigate the loss. Here, we demonstrate a strong photoluminescence enhancement from graphene/III-V quantum dot mixed-dimensional heterostructures. The distance between graphene and quantum dots in the 2D/0D hybrid structure determines the degree of radiative carrier recombination enhancement from 80% to 800% compared to the quantum dot only structure. Time-resolved photoluminescence decay also shows increased carrier lifetimes when the distance decreases from 50 to 10 nm. We propose that the optical enhancement is due to energy band bending and hole carrier transfer, which repair the imbalance of electron and hole carrier densities in quantum dots. This 2D graphene/0D quantum dot heterostructure shows promise for high performance nanoscale optoelectronic devices.
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Affiliation(s)
- Quang Nhat Dang Lung
- Center for Opto-electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea
- Division of Nanoscience and Technology, KIST School at University of Science and Technology, Seoul 02792, South Korea
| | - Rafael Jumar Chu
- Center for Opto-electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea
- Division of Nanoscience and Technology, KIST School at University of Science and Technology, Seoul 02792, South Korea
| | - Yeonhwa Kim
- Center for Opto-electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea
- Department of Materials Science and Engineering, Korea University, Seoul 02841, South Korea
| | - Tsimafei Laryn
- Center for Opto-electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea
- Division of Nanoscience and Technology, KIST School at University of Science and Technology, Seoul 02792, South Korea
| | - May Angelu Madarang
- Center for Opto-electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea
- Division of Nanoscience and Technology, KIST School at University of Science and Technology, Seoul 02792, South Korea
| | - Oleksiy Kovalchuk
- Center for Opto-electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea
| | - Yong-Won Song
- Center for Opto-electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea
| | - In-Ho Lee
- Center for Opto-electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea
| | - Changsoon Choi
- Center for Opto-electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea
| | - Won Jun Choi
- Center for Opto-electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea
| | - Daehwan Jung
- Center for Opto-electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea
- Division of Nanoscience and Technology, KIST School at University of Science and Technology, Seoul 02792, South Korea
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7
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Zhang G, Huang S, Chaves A, Yan H. Black Phosphorus as Tunable Van der Waals Quantum Wells with High Optical Quality. ACS NANO 2023; 17:6073-6080. [PMID: 36912761 DOI: 10.1021/acsnano.3c00904] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Van der Waals quantum wells, naturally formed in two-dimensional layered materials with nanoscale thickness, possess many inherent advantages over conventional molecular beam epitaxy grown counterparts, and could bring up intriguing physics and applications. However, optical transitions originated from the series of quantized states in these emerging quantum wells are still elusive. Here, we show that multilayer black phosphorus appears to be an excellent candidate for van der Waals quantum wells with well-defined subbands and high optical quality. Using infrared absorption spectroscopy, we probe subband structures of multilayer black phosphorus with tens of atomic layers, revealing clear signatures for optical transitions with subband index as high as 10, far from what was attainable previously. Surprisingly, in addition to allowed transitions, an unexpected series of "forbidden" transitions is also evidently observed, which enables us to determine energy spacings separately for conduction and valence subbands. Furthermore, the linear tunability of subband spacings by temperature and strain is demonstrated. Our results are expected to facilitate potential applications for infrared optoelectronics based on tunable van der Waals quantum wells.
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Affiliation(s)
- Guowei Zhang
- Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an 710072, Shaanxi, China
| | - Shenyang Huang
- Department of Physics, State Key Laboratory of Surface Physics and Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education), Fudan University, Shanghai 200433, China
- Institute of Optoelectronics, Fudan University, Shanghai 200433, China
| | - Andrey Chaves
- Departamento de Física, Universidade Federal do Ceará, Caixa Postal 6030, 60455-760 Fortaleza, Ceará, Brazil
- Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
| | - Hugen Yan
- Department of Physics, State Key Laboratory of Surface Physics and Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education), Fudan University, Shanghai 200433, China
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8
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Chen H, Ge X, Wang Y, Xu Q, Li Z, Zhou X, Hao J, Hu W, Li S, Wang X. Uniaxial Strain-Induced Tunable Mid-infrared Light Emission from Thin Film Black Phosphorus. J Phys Chem Lett 2023; 14:2092-2098. [PMID: 36799775 DOI: 10.1021/acs.jpclett.3c00145] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Strain engineering is a powerful tool that can modulate semiconductor device performance. Here, we demonstrate that the bandgap of thin film (∼40 nm) black phosphorus (bP) can be continuously tuned from 2.9 to 3.9 μm by applying an in-plane uniaxial strain, as evidenced by mid-infrared photoluminescence (PL) spectroscopy. The deduced bandgap strain coefficients are ∼103 meV %-1, which coincide with those obtained in few-layer bP. On the basis of first-principles calculations, the origin of the uniaxial tensile strain-induced PL enhancement is suggested to be due to the increase in both the effective mass ratio (me*/mh*) and the bandgap, leading to the increment of the radiative efficiency. Moreover, the mid-infrared PL emission remains perfectly linear-polarized along the armchair direction regardless of tensile or compressive strain. The highly tunable bandgap of bP in the mid-infrared regime opens up opportunities for the realization of mid-infrared light-emitting diodes and lasers using layered materials.
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Affiliation(s)
- Hao Chen
- School of Materials and Chemistry, University of Shanghai for Science and Technology, Shanghai 200093, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Xun Ge
- Department of Physics, East China Normal University, Shanghai 200241, China
| | - Yiming Wang
- Department of Electronic Engineering, School of Information Science and Engineering, National Model Microelectronics College, Xiamen University, Xiamen 361005, China
| | - Qianqian Xu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Zhifeng Li
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Xiaohao Zhou
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Jiaming Hao
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai 200433, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Shengjuan Li
- School of Materials and Chemistry, University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Xingjun Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
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9
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Li W, Li H, Khan K, Liu X, Wang H, Lin Y, Zhang L, Tareen AK, Wageh S, Al-Ghamdi AA, Teng D, Zhang H, Shi Z. Infrared Light Emission Devices Based on Two-Dimensional Materials. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:nano12172996. [PMID: 36080035 PMCID: PMC9457538 DOI: 10.3390/nano12172996] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/08/2022] [Revised: 08/18/2022] [Accepted: 08/28/2022] [Indexed: 05/25/2023]
Abstract
Two-dimensional (2D) materials have garnered considerable attention due to their advantageous properties, including tunable bandgap, prominent carrier mobility, tunable response and absorption spectral band, and so forth. The above-mentioned properties ensure that 2D materials hold great promise for various high-performance infrared (IR) applications, such as night vision, remote sensing, surveillance, target acquisition, optical communication, etc. Thus, it is of great significance to acquire better insight into IR applications based on 2D materials. In this review, we summarize the recent progress of 2D materials in IR light emission device applications. First, we introduce the background and motivation of the review, then the 2D materials suitable for IR light emission are presented, followed by a comprehensive review of 2D-material-based spontaneous emission and laser applications. Finally, further development directions and challenges are summarized. We believe that milestone investigations of 2D-material-based IR light emission applications will emerge soon, which are beneficial for 2D-material-based nano-device commercialization.
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Affiliation(s)
- Wenyi Li
- School of Physics & New Energy, Xuzhou University of Technology, Xuzhou 221018, China
| | - Hui Li
- School of Physics & New Energy, Xuzhou University of Technology, Xuzhou 221018, China
| | - Karim Khan
- Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, Collaborative Innovation Center for Optoelectronic Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, China
- School of Electrical Engineering & Intelligentization, Dongguan University of Technology, Dongguan 523808, China
| | - Xiaosong Liu
- School of Physics & New Energy, Xuzhou University of Technology, Xuzhou 221018, China
| | - Hui Wang
- School of Physics & New Energy, Xuzhou University of Technology, Xuzhou 221018, China
| | - Yanping Lin
- School of Physics & New Energy, Xuzhou University of Technology, Xuzhou 221018, China
| | - Lishang Zhang
- School of Physics & New Energy, Xuzhou University of Technology, Xuzhou 221018, China
| | - Ayesha Khan Tareen
- Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, Collaborative Innovation Center for Optoelectronic Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, China
- School of Mechanical Engineering, Dongguan University of Technology, Dongguan 523808, China
| | - S. Wageh
- Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589, Saudi Arabia
| | - Ahmed A. Al-Ghamdi
- Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589, Saudi Arabia
| | - Daoxiang Teng
- School of Physics & New Energy, Xuzhou University of Technology, Xuzhou 221018, China
| | - Han Zhang
- Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, Collaborative Innovation Center for Optoelectronic Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, China
| | - Zhe Shi
- School of Physics & New Energy, Xuzhou University of Technology, Xuzhou 221018, China
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10
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Chen Y, Tan C, Wang Z, Miao J, Ge X, Zhao T, Liao K, Ge H, Wang Y, Wang F, Zhou Y, Wang P, Zhou X, Shan C, Peng H, Hu W. Momentum-matching and band-alignment van der Waals heterostructures for high-efficiency infrared photodetection. SCIENCE ADVANCES 2022; 8:eabq1781. [PMID: 35905192 DOI: 10.1126/sciadv.abq1781] [Citation(s) in RCA: 15] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Two-dimensional (2D) infrared photodetectors always suffer from low quantum efficiency (QE) because of the limited atomically thin absorption. Here, we reported 2D black phosphorus (BP)/Bi2O2Se van der Waals (vdW) photodetectors with momentum-matching and band-alignment heterostructures to achieve high QE. The QE was largely improved by optimizing the generation, suppressing the recombination, and improving the collection of photocarriers. Note that momentum-matching BP/Bi2O2Se heterostructures in k-space lead to the highly efficient generation and transition of photocarriers. The recombination process can be largely suppressed by lattice mismatching-immune vdW interfaces. Furthermore, type II BP/Bi2O2Se vdW heterostructures could also assist fast transport and collection of photocarriers. By constructing momentum-matching and band-alignment heterostructures, a record-high QE of 84% at 1.3 micrometers and 76.5% at 2 micrometers have been achieved in BP/Bi2O2Se vdW photodetectors.
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Affiliation(s)
- Yunfeng Chen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Congwei Tan
- Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
| | - Zhen Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Jinshui Miao
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xun Ge
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Tiange Zhao
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Kecai Liao
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Haonan Ge
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Yang Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Fang Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Yi Zhou
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Peng Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Xiaohao Zhou
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Chongxin Shan
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, School of Physics and Engineering, Zhengzhou University, Zhengzhou 450001, China
| | - Hailin Peng
- Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- University of Chinese Academy of Sciences, Beijing 100049, China
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11
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Mid-Infrared Optoelectronic Devices Based on Two-Dimensional Materials beyond Graphene: Status and Trends. NANOMATERIALS 2022; 12:nano12132260. [PMID: 35808105 PMCID: PMC9268368 DOI: 10.3390/nano12132260] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/07/2022] [Revised: 06/22/2022] [Accepted: 06/23/2022] [Indexed: 01/27/2023]
Abstract
Since atomically thin two-dimensional (2D) graphene was successfully synthesized in 2004, it has garnered considerable interest due to its advanced properties. However, the weak optical absorption and zero bandgap strictly limit its further development in optoelectronic applications. In this regard, other 2D materials, including black phosphorus (BP), transition metal dichalcogenides (TMDCs), 2D Te nanoflakes, and so forth, possess advantage properties, such as tunable bandgap, high carrier mobility, ultra-broadband optical absorption, and response, enable 2D materials to hold great potential for next-generation optoelectronic devices, in particular, mid-infrared (MIR) band, which has attracted much attention due to its intensive applications, such as target acquisition, remote sensing, optical communication, and night vision. Motivated by this, this article will focus on the recent progress of semiconducting 2D materials in MIR optoelectronic devices that present a suitable category of 2D materials for light emission devices, modulators, and photodetectors in the MIR band. The challenges encountered and prospects are summarized at the end. We believe that milestone investigations of 2D materials beyond graphene-based MIR optoelectronic devices will emerge soon, and their positive contribution to the nano device commercialization is highly expected.
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12
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Chen PL, Chen Y, Chang TY, Li WQ, Li JX, Lee S, Fang Z, Li M, Majumdar A, Liu CH. Waveguide-Integrated van der Waals Heterostructure Mid-Infrared Photodetector with High Performance. ACS APPLIED MATERIALS & INTERFACES 2022; 14:24856-24863. [PMID: 35476925 DOI: 10.1021/acsami.2c01094] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Extending the operation wavelength of silicon photonics to the mid-infrared (mid-IR) band will significantly benefit critical application areas, including health care, astronomy, and chemical sensing. However, a major hurdle for mid-IR silicon photonics has been the lack of high-speed, high-responsivity, and low noise-equivalent power (NEP) photodetectors. Here, we demonstrate a van der Waals (vdW) heterostructure mid-IR photodetector integrated on a silicon-on-insulator (SOI) waveguide. The detector is composed of vertically stacked black phosphorus (BP)/molybdenum ditelluride (MoTe2). We measured high responsivity (up to 0.85 A/W) over a 3-4 μm spectral range, indicating that waveguide-confined light could strongly interact with vdW heterostructures on top. In addition, the waveguide-integrated detector could be modulated at high speed (>10 MHz) and its switching performance shows excellent stability. These results, together with the noise analysis, indicate that the NEP of the detector is as low as 8.2 pW/Hz1/2. This reported critical missing piece in the silicon photonic toolbox will enable the wide-spread adoption of mid-IR integrated photonic circuits.
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Affiliation(s)
- Po-Liang Chen
- Institute of Photonics Technologies, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Yueyang Chen
- Department of Electrical and Computer Engineering, University of Washington, Seattle, Washington 98195, United States
| | - Tian-Yun Chang
- Institute of Photonics Technologies, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Wei-Qing Li
- Institute of Photonics Technologies, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Jia-Xin Li
- Institute of Photonics Technologies, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Seokhyeong Lee
- Department of Electrical and Computer Engineering, University of Washington, Seattle, Washington 98195, United States
| | - Zhuoran Fang
- Department of Electrical and Computer Engineering, University of Washington, Seattle, Washington 98195, United States
| | - Mo Li
- Department of Electrical and Computer Engineering, University of Washington, Seattle, Washington 98195, United States
- Department of Physics, University of Washington, Seattle, Washington 98195, United States
| | - Arka Majumdar
- Department of Electrical and Computer Engineering, University of Washington, Seattle, Washington 98195, United States
- Department of Physics, University of Washington, Seattle, Washington 98195, United States
| | - Chang-Hua Liu
- Institute of Photonics Technologies, National Tsing Hua University, Hsinchu 30013, Taiwan
- Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
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13
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Anomalous non-equilibrium response in black phosphorus to sub-gap mid-infrared excitation. Nat Commun 2022; 13:2667. [PMID: 35562345 PMCID: PMC9106664 DOI: 10.1038/s41467-022-30341-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/04/2021] [Accepted: 04/27/2022] [Indexed: 12/02/2022] Open
Abstract
The competition between the electron-hole Coulomb attraction and the 3D dielectric screening dictates the optical properties of layered semiconductors. In low-dimensional materials, the equilibrium dielectric environment can be significantly altered by the ultrafast excitation of photo-carriers, leading to renormalized band gap and exciton binding energies. Recently, black phosphorus emerged as a 2D material with strongly layer-dependent electronic properties. Here, we resolve the response of bulk black phosphorus to mid-infrared pulses tuned across the band gap. We find that, while above-gap excitation leads to a broadband light-induced transparency, sub-gap pulses drive an anomalous response, peaked at the single-layer exciton resonance. With the support of DFT calculations, we tentatively ascribe this experimental evidence to a non-adiabatic modification of the screening environment. Our work heralds the non-adiabatic optical manipulation of the electronic properties of 2D materials, which is of great relevance for the engineering of versatile van der Waals materials. Here, the authors investigate the optical response of bulk black phosphorus to mid-infrared pulses, and find that while above-gap excitation leads to a broadband light-induced transparency, sub-gap pulses drive an anomalous response, peaked at the single-layer exciton resonance.
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14
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Schué L, Goudreault FA, Righi A, Resende GC, Lefebvre V, Godbout É, Tie M, Ribeiro HB, Heinz TF, Pimenta MA, Côté M, Francœur S, Martel R. Visible Out-of-plane Polarized Luminescence and Electronic Resonance in Black Phosphorus. NANO LETTERS 2022; 22:2851-2858. [PMID: 35311277 DOI: 10.1021/acs.nanolett.1c04998] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Black phosphorus (BP) is unique among layered materials because of its homonuclear lattice and strong structural anisotropy. While recent investigations on few-layer BP have extensively explored the in-plane (a, c) anisotropy, much less attention has been given to the out-of-plane direction (b). Here, the optical response from bulk BP is probed using polarization-resolved photoluminescence (PL), photoluminescence excitation (PLE), and resonant Raman scattering along the zigzag, out-of-plane, and armchair directions. An unexpected b-polarized luminescence emission is detected in the visible, far above the fundamental gap. PLE indicates that this emission is generated through b-polarized excitation at 2.3 eV. The same electronic resonance is observed in resonant Raman with the enhancement of the Ag phonon modes scattering efficiency. These experimental results are fully consistent with DFT calculations of the permittivity tensor elements and demonstrate the remarkable extent to which the anisotropy influences the optical properties and carrier dynamics in black phosphorus.
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Affiliation(s)
- Léonard Schué
- Département de Chimie, Université de Montréal, Montréal, Québec H3C 3J7, Canada
- Département de Physique, Université de Montréal, Montréal, Québec H3C 3J7, Canada
| | - Félix A Goudreault
- Département de Physique, Université de Montréal, Montréal, Québec H3C 3J7, Canada
| | - Ariete Righi
- Departamento de Fìsica, Universidade Federal de Minas Gerais, Belo Horizonte 30123-970, Brazil
| | - Geovani C Resende
- Departamento de Fìsica, Universidade Federal de Minas Gerais, Belo Horizonte 30123-970, Brazil
| | - Valérie Lefebvre
- Département de Chimie, Université de Montréal, Montréal, Québec H3C 3J7, Canada
| | - Émile Godbout
- Département de Chimie, Université de Montréal, Montréal, Québec H3C 3J7, Canada
| | - Monique Tie
- Department of Applied Physics, Stanford University, Stanford, California 94305, United States
- SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Henrique B Ribeiro
- Department of Applied Physics, Stanford University, Stanford, California 94305, United States
- SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Tony F Heinz
- Department of Applied Physics, Stanford University, Stanford, California 94305, United States
- SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Marcos A Pimenta
- Departamento de Fìsica, Universidade Federal de Minas Gerais, Belo Horizonte 30123-970, Brazil
| | - Michel Côté
- Département de Physique, Université de Montréal, Montréal, Québec H3C 3J7, Canada
| | - Sébastien Francœur
- Département de Génie Physique, École Polytechnique de Montréal, Montréal, Québec H3C 3A7, Canada
| | - Richard Martel
- Département de Chimie, Université de Montréal, Montréal, Québec H3C 3J7, Canada
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15
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Gupta N, Kim H, Azar NS, Uddin SZ, Lien DH, Crozier KB, Javey A. Bright Mid-Wave Infrared Resonant-Cavity Light-Emitting Diodes Based on Black Phosphorus. NANO LETTERS 2022; 22:1294-1301. [PMID: 35072481 DOI: 10.1021/acs.nanolett.1c04557] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The mid-wave infrared (MWIR) wavelength range plays a central role in a variety of applications, including optical gas sensing, industrial process control, spectroscopy, and infrared (IR) countermeasures. Among the MWIR light sources, light-emitting diodes (LEDs) have the advantages of simple design, room-temperature operation, and low cost. Owing to the low Auger recombination at high carrier densities and direct bandgap of black phosphorus (bP), it can serve as a high quantum efficiency emitting layer in LEDs. In this work, we demonstrate bP-LEDs exhibiting high external quantum efficiencies and wall-plug efficiencies of up to 4.43 and 1.78%, respectively. This is achieved by integrating the device with an Al2O3/Au optical cavity, which enhances the emission efficiency, and a thin transparent conducing oxide [indium tin oxide (ITO)] layer, which reduces the parasitic resistance, both resulting in order of magnitude improvements to performance.
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Affiliation(s)
- Niharika Gupta
- Electrical Engineering & Computer Sciences, University of California, Berkeley, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Hyungjin Kim
- Electrical Engineering & Computer Sciences, University of California, Berkeley, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Nima Sefidmooye Azar
- Department of Electrical and Electronic Engineering, University of Melbourne, Parkville, Victoria 3010, Australia
- Australian Research Council (ARC) Centre of Excellence for Transformative Meta-Optical Systems, University of Melbourne, Parkville, Victoria 3010, Australia
| | - Shiekh Zia Uddin
- Electrical Engineering & Computer Sciences, University of California, Berkeley, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Der-Hsien Lien
- Electrical Engineering & Computer Sciences, University of California, Berkeley, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Kenneth B Crozier
- Department of Electrical and Electronic Engineering, University of Melbourne, Parkville, Victoria 3010, Australia
- Australian Research Council (ARC) Centre of Excellence for Transformative Meta-Optical Systems, University of Melbourne, Parkville, Victoria 3010, Australia
- School of Physics, University of Melbourne, Parkville, Victoria 3010, Australia
| | - Ali Javey
- Electrical Engineering & Computer Sciences, University of California, Berkeley, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
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16
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Kim H, Uddin SZ, Lien DH, Yeh M, Azar NS, Balendhran S, Kim T, Gupta N, Rho Y, Grigoropoulos CP, Crozier KB, Javey A. Actively variable-spectrum optoelectronics with black phosphorus. Nature 2021; 596:232-237. [PMID: 34381234 DOI: 10.1038/s41586-021-03701-1] [Citation(s) in RCA: 50] [Impact Index Per Article: 16.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/22/2021] [Accepted: 06/07/2021] [Indexed: 11/09/2022]
Abstract
Room-temperature optoelectronic devices that operate at short-wavelength and mid-wavelength infrared ranges (one to eight micrometres) can be used for numerous applications1-5. To achieve the range of operating wavelengths needed for a given application, a combination of materials with different bandgaps (for example, superlattices or heterostructures)6,7 or variations in the composition of semiconductor alloys during growth8,9 are used. However, these materials are complex to fabricate, and the operating range is fixed after fabrication. Although wide-range, active and reversible tunability of the operating wavelengths in optoelectronic devices after fabrication is a highly desirable feature, no such platform has been yet developed. Here we demonstrate high-performance room-temperature infrared optoelectronics with actively variable spectra by presenting black phosphorus as an ideal candidate. Enabled by the highly strain-sensitive nature of its bandgap, which varies from 0.22 to 0.53 electronvolts, we show a continuous and reversible tuning of the operating wavelengths in light-emitting diodes and photodetectors composed of black phosphorus. Furthermore, we leverage this platform to demonstrate multiplexed nondispersive infrared gas sensing, whereby multiple gases (for example, carbon dioxide, methane and water vapour) are detected using a single light source. With its active spectral tunability while also retaining high performance, our work bridges a technological gap, presenting a potential way of meeting different requirements for emission and detection spectra in optoelectronic applications.
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Affiliation(s)
- Hyungjin Kim
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA.,Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Shiekh Zia Uddin
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA.,Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Der-Hsien Lien
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA.,Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Matthew Yeh
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA.,Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Nima Sefidmooye Azar
- Department of Electrical and Electronic Engineering, University of Melbourne, Melbourne, Victoria, Australia
| | | | - Taehun Kim
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA.,Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Niharika Gupta
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA.,Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Yoonsoo Rho
- Department of Mechanical Engineering, University of California, Berkeley, CA, USA
| | | | - Kenneth B Crozier
- Department of Electrical and Electronic Engineering, University of Melbourne, Melbourne, Victoria, Australia.,School of Physics, University of Melbourne, Melbourne, Victoria, Australia.,Australian Research Council (ARC) Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Melbourne, Melbourne, Victoria, Australia
| | - Ali Javey
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA. .,Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
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17
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Chen JH, Xiong YF, Xu F, Lu YQ. Silica optical fiber integrated with two-dimensional materials: towards opto-electro-mechanical technology. LIGHT, SCIENCE & APPLICATIONS 2021; 10:78. [PMID: 33854031 PMCID: PMC8046821 DOI: 10.1038/s41377-021-00520-x] [Citation(s) in RCA: 16] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/19/2020] [Revised: 03/14/2021] [Accepted: 03/29/2021] [Indexed: 05/27/2023]
Abstract
In recent years, the integration of graphene and related two-dimensional (2D) materials in optical fibers have stimulated significant advances in all-fiber photonics and optoelectronics. The conventional passive silica fiber devices with 2D materials are empowered for enhancing light-matter interactions and are applied for manipulating light beams in respect of their polarization, phase, intensity and frequency, and even realizing the active photo-electric conversion and electro-optic modulation, which paves a new route to the integrated multifunctional all-fiber optoelectronic system. This article reviews the fast-progress field of hybrid 2D-materials-optical-fiber for the opto-electro-mechanical devices. The challenges and opportunities in this field for future development are discussed.
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Affiliation(s)
- Jin-Hui Chen
- Institute of Electromagnetics and Acoustics, Xiamen University, Xiamen, 361005, China
- College of Engineering and Applied Sciences, National Laboratory of Solid State Microstructures and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Yi-Feng Xiong
- College of Engineering and Applied Sciences, National Laboratory of Solid State Microstructures and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Fei Xu
- College of Engineering and Applied Sciences, National Laboratory of Solid State Microstructures and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
| | - Yan-Qing Lu
- College of Engineering and Applied Sciences, National Laboratory of Solid State Microstructures and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
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18
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Liu DS, Wu J, Xu H, Wang Z. Emerging Light-Emitting Materials for Photonic Integration. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2003733. [PMID: 33306201 DOI: 10.1002/adma.202003733] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2020] [Revised: 07/26/2020] [Indexed: 06/12/2023]
Abstract
The arrival of the information explosion era is urging the development of large-bandwidth high-data-rate optical interconnection technology. Up to now, the biggest stumbling block in optical interconnections has been the lack of efficient light sources despite significant progress that has been made in germanium-on-silicon (Ge-on-Si) and III-V-on-silicon (III-V-on-Si) lasers. 2D materials and metal halide perovskites have attracted much attention in recent years, and exhibit distinctive advantages in the application of on-chip light emitters. Herein, this Progress Report reviews the recent progress made in light-emitting materials with a focus on new materials, i.e., 2D materials and metal halide perovskites. The report briefly introduces the current status of Ge-on-Si and III-V-on-Si lasers and discusses the advances of 2D and perovskite light-emitting materials for photonic integration, including their optical properties, preparation methods, as well as the light sources based on these materials. Finally, challenges and perspectives of these emerging materials on the way to the efficient light sources are discussed.
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Affiliation(s)
- De-Sheng Liu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Jiang Wu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Hongxing Xu
- School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Zhiming Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China
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19
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Mao J, Ortiz O, Wang J, Malinge A, Badia A, Kéna-Cohen S. Langmuir-Blodgett fabrication of large-area black phosphorus-C 60 thin films and heterojunction photodetectors. NANOSCALE 2020; 12:19814-19823. [PMID: 32966495 DOI: 10.1039/d0nr04537c] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
Black phosphorus (BP) has emerged as a promising two-dimensional (2D) semiconductor for applications in electronics, optoelectronics, and energy storage. As is the case for many 2D materials, the fabrication of large-area BP thin films remains a considerable challenge. Here, we report the assembly of BP nanosheets into compact thin films using the Langmuir-Blodgett (LB) technique. The overlapping stacking between BP nanosheets is suppressed when the nanosheets are surrounded by fullerene C60 molecules due to physisorption. This allows for the fabrication of large-area BP films (20 mm × 18 mm) with a homogenous nanosheet distribution and negligible oxidation. The fabricated films show measurable absorption up to 2.3 μm. We use these films as active layers to demonstrate mm-sized BP heterojunction photodetectors with mA W-1 scale responsivities from the visible to the near-infrared. Photodetector internal quantum efficiencies at 660 nm and 808 nm are 5% and 1%, respectively.
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Affiliation(s)
- Jian Mao
- Department of Engineering Physics, Polytechnique Montréal, Montréal, H3C3A7, QC, Canada.
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20
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Huang S, Wang F, Zhang G, Song C, Lei Y, Xing Q, Wang C, Zhang Y, Zhang J, Xie Y, Mu L, Cong C, Huang M, Yan H. From Anomalous to Normal: Temperature Dependence of the Band Gap in Two-Dimensional Black Phosphorus. PHYSICAL REVIEW LETTERS 2020; 125:156802. [PMID: 33095618 DOI: 10.1103/physrevlett.125.156802] [Citation(s) in RCA: 12] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/13/2020] [Revised: 06/11/2020] [Accepted: 08/31/2020] [Indexed: 06/11/2023]
Abstract
The temperature dependence of the band gap is crucial to a semiconductor. Bulk black phosphorus is known to exhibit an anomalous behavior. Through optical spectroscopy, here we show that the temperature effect on black phosphorus band gap gradually evolves with decreasing layer number, eventually turns into a normal one in the monolayer limit, rendering a crossover from the anomalous to the normal. Meanwhile, the temperature-induced shift in optical resonance also differs with different transition indices for the same thickness sample. A comprehensive analysis reveals that the temperature-tunable interlayer coupling is responsible for the observed diverse scenario. Our study provides a key to the apprehension of the anomalous temperature behavior in certain layered semiconductors.
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Affiliation(s)
- Shenyang Huang
- State Key Laboratory of Surface Physics, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai 200433, China
| | - Fanjie Wang
- State Key Laboratory of Surface Physics, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai 200433, China
| | - Guowei Zhang
- State Key Laboratory of Surface Physics, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai 200433, China
- Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an 710072, China
| | - Chaoyu Song
- State Key Laboratory of Surface Physics, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai 200433, China
| | - Yuchen Lei
- State Key Laboratory of Surface Physics, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai 200433, China
| | - Qiaoxia Xing
- State Key Laboratory of Surface Physics, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai 200433, China
| | - Chong Wang
- State Key Laboratory of Surface Physics, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai 200433, China
| | - Yujun Zhang
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Jiasheng Zhang
- State Key Laboratory of Surface Physics, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai 200433, China
| | - Yuangang Xie
- State Key Laboratory of Surface Physics, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai 200433, China
| | - Lei Mu
- State Key Laboratory of Surface Physics, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai 200433, China
| | - Chunxiao Cong
- State Key Laboratory of ASIC and System, School of Information Science and Technology, Fudan University, Shanghai 200433, China
| | - Mingyuan Huang
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Hugen Yan
- State Key Laboratory of Surface Physics, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai 200433, China
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21
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Chang TY, Chen Y, Luo DI, Li JX, Chen PL, Lee S, Fang Z, Li WQ, Zhang YY, Li M, Majumdar A, Liu CH. Black Phosphorus Mid-Infrared Light-Emitting Diodes Integrated with Silicon Photonic Waveguides. NANO LETTERS 2020; 20:6824-6830. [PMID: 32816495 DOI: 10.1021/acs.nanolett.0c02818] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Light-emitting diodes (LEDs) based on III-V/II-VI materials have delivered a compelling performance in the mid-infrared (mid-IR) region, which enabled wide-ranging applications in sensing, including environmental monitoring, defense, and medical diagnostics. Continued efforts are underway to realize on-chip sensors via heterogeneous integration of mid-IR emitters on a silicon photonic chip, but the uptake of such an approach is limited by the high costs and interfacial strains, associated with the processes of heterogeneous integrations. Here, the black phosphorus (BP)-based van der Waals (vdW) heterostructures are exploited as room-temperature LEDs. The demonstrated devices emit linearly polarized light, and the spectra cover the technologically important mid-IR atmospheric window. Additionally, the BP LEDs exhibit fast modulation speed and exceptional operation stability. The measured peak extrinsic quantum efficiency is comparable to the III-V/II-VI mid-IR LEDs. By leveraging the integrability of vdW heterostructures, we further demonstrate a silicon photonic waveguide-integrated BP LED.
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Affiliation(s)
- Tian-Yun Chang
- Institute of Photonics Technologies, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Yueyang Chen
- Department of Electrical and Computer Engineering, University of Washington, Seattle, Washington 98195, United States
| | - De-In Luo
- Institute of Photonics Technologies, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Jia-Xin Li
- Institute of Photonics Technologies, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Po-Liang Chen
- Institute of Photonics Technologies, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Seokhyeong Lee
- Department of Electrical and Computer Engineering, University of Washington, Seattle, Washington 98195, United States
| | - Zhuoran Fang
- Department of Electrical and Computer Engineering, University of Washington, Seattle, Washington 98195, United States
| | - Wei-Qing Li
- Institute of Photonics Technologies, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Ya-Yun Zhang
- Institute of Photonics Technologies, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Mo Li
- Department of Electrical and Computer Engineering, University of Washington, Seattle, Washington 98195, United States
- Department of Physics, University of Washington, Seattle, Washington 98195, United States
| | - Arka Majumdar
- Department of Electrical and Computer Engineering, University of Washington, Seattle, Washington 98195, United States
- Department of Physics, University of Washington, Seattle, Washington 98195, United States
| | - Chang-Hua Liu
- Institute of Photonics Technologies, National Tsing Hua University, Hsinchu 30013, Taiwan
- Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
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22
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Lan C, Shi Z, Cao R, Li C, Zhang H. 2D materials beyond graphene toward Si integrated infrared optoelectronic devices. NANOSCALE 2020; 12:11784-11807. [PMID: 32462161 DOI: 10.1039/d0nr02574g] [Citation(s) in RCA: 19] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
Since the discovery of graphene in 2004, it has become a worldwide hot topic due to its fascinating properties. However, the zero band gap and weak light absorption of graphene strictly restrict its applications in optoelectronic devices. In this regard, semiconducting two-dimensional (2D) materials are thought to be promising candidates for next-generation optoelectronic devices. Infrared (IR) light has gained intensive attention due to its vast applications, including night vision, remote sensing, target acquisition, optical communication, etc. Consequently, the generation, modulation, and detection of IR light are crucial for practical applications. Due to the van der Waals interaction between 2D materials and Si, the lattice mismatch of 2D materials and Si can be neglected; consequently, the integration process can be achieved easily. Herein, we review the recent progress of semiconducting 2D materials in IR optoelectronic devices. Firstly, we introduce the background and motivation of the review. Then, the suitable materials for IR applications are presented, followed by a comprehensive review of the applications of 2D materials in light emitting devices, optical modulators, and photodetectors. Finally, the problems encountered and further developments are summarized. We believe that milestone investigations of IR optoelectronics based on 2D materials beyond graphene will emerge soon, which will bring about great industrial revelations in 2D material-based integrated nanodevice commercialization.
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Affiliation(s)
- Changyong Lan
- State Key Laboratory of Electronic Thin Films and Integrated Devices, and School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China.
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Roy PK, Luxa J, Sofer Z. Emerging pnictogen-based 2D semiconductors: sensing and electronic devices. NANOSCALE 2020; 12:10430-10446. [PMID: 32377656 DOI: 10.1039/d0nr02932g] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Pnictogens are an intensively studied group of monoelemental two-dimensional materials. This group of elements consists of phosphorus, arsenic, antimony, and bismuth. In this group, the elements adopt two different layered structural allotropes, orthorhombic structure with true van der Waals layered interactions and rhombohedral structure, where covalent interactions between layers are also present. The orthorhombic structure is well known for phosphorus and arsenic, and the rhombohedral structure is the most thermodynamically stable allotropic modification of arsenic, antimony, and bismuth. Due to the electronic structure of pnictogen layers and their semiconducting character, these materials have huge application potential for electronic devices such as transistors and sensors including photosensitive devices as well as gas and electrochemical sensors. While photodetection and gas sensing applications are often related to lithography processed materials, chemical sensing proceeds in a liquid environment (either aqueous or non-aqueous) and can be influenced by surface oxidation of these materials. In this review, we explore the current state of pnictogen applications in sensing and electronic devices including transistors, photodetectors, gas sensors, and chemical/electrochemical sensors.
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Affiliation(s)
- Pradip Kumar Roy
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technicka 5, 166 28 Prague 6, Czech Republic.
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24
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Wang J, Rousseau A, Yang M, Low T, Francoeur S, Kéna-Cohen S. Mid-infrared Polarized Emission from Black Phosphorus Light-Emitting Diodes. NANO LETTERS 2020; 20:3651-3655. [PMID: 32286837 DOI: 10.1021/acs.nanolett.0c00581] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
We demonstrate a mid-infrared light-emitting diode based on the 2D semiconductor black phosphorus (BP). The device is composed of a mechanically exfoliated BP/molybdenum disulfide heterojunction. Under forward bias, it emits polarized electroluminescence at λ = 3.68 μm, with room-temperature internal and external quantum efficiencies of ∼1% and ∼0.03%, respectively. In our structure, outcoupling losses are dominated by radiation toward the high refractive index substrate. The ability to tune the bandgap of BP and consequently its emission wavelength with layer number, strain, and electric field make these LEDs particularly attractive for heterointegration into mid-infrared photonic platforms.
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Affiliation(s)
- Junjia Wang
- Department of Engineering Physics, Polytechnique Montréal, Montréal, Québec H3C 3A7, Canada
| | - Adrien Rousseau
- Department of Engineering Physics, Polytechnique Montréal, Montréal, Québec H3C 3A7, Canada
| | - Mei Yang
- Department of Engineering Physics, Polytechnique Montréal, Montréal, Québec H3C 3A7, Canada
| | - Tony Low
- Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, Minnesota 55455, United States
| | - Sébastien Francoeur
- Department of Engineering Physics, Polytechnique Montréal, Montréal, Québec H3C 3A7, Canada
| | - Stéphane Kéna-Cohen
- Department of Engineering Physics, Polytechnique Montréal, Montréal, Québec H3C 3A7, Canada
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25
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Zhang Y, Wang S, Chen S, Zhang Q, Wang X, Zhu X, Zhang X, Xu X, Yang T, He M, Yang X, Li Z, Chen X, Wu M, Lu Y, Ma R, Lu W, Pan A. Wavelength-Tunable Mid-Infrared Lasing from Black Phosphorus Nanosheets. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1808319. [PMID: 32159904 DOI: 10.1002/adma.201808319] [Citation(s) in RCA: 12] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/26/2018] [Revised: 02/16/2020] [Accepted: 02/24/2020] [Indexed: 06/10/2023]
Abstract
Van der Waals layered semiconductor materials own unique physical properties and have attracted intense interest in developing high-performance electronic and photonic devices. Among them, black phosphorus (BP) is distinct for its layer number-tuned direct band gap which spans from near- to mid-infrared (MIR) waveband. In addition, the puckered honey comb crystal lattice endows the material with highly linear-polarized emission and marked anisotropy in carrier transportation. These unique material properties render BP as an intriguing and promising building block for constructing mid-infrared-ranged coherent light sources. Here, a room temperature surface-emitting MIR laser based on single crystalline BP nanosheets coupled with a distributed Bragg reflector cavity is reported. MIR stimulated emission at 3611 nm is achieved with a near-unity linear polarization, which exhibits robust thermal stability up to 360 K. Most importantly, the lasing wavelength can be tuned from 3425 to 4068 nm by varying the cavity length via thickness control of BP layer. The demonstrated highly polarized lasing output and wavelength-tunable capacity of the proposed device scheme in MIR spectral range opens up promising opportunities for a broad array of applications in polarization-resolved IR imaging, range-finding, and free space quantum communications.
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Affiliation(s)
- Yushuang Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, China
| | - Shaowei Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physic, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Shula Chen
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, China
| | - Qinglin Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronic Science, Hunan University, Changsha, Hunan, 410082, China
| | - Xiao Wang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronic Science, Hunan University, Changsha, Hunan, 410082, China
| | - Xiaoli Zhu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronic Science, Hunan University, Changsha, Hunan, 410082, China
| | - Xuehong Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronic Science, Hunan University, Changsha, Hunan, 410082, China
| | - Xing Xu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronic Science, Hunan University, Changsha, Hunan, 410082, China
| | - Tiefeng Yang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronic Science, Hunan University, Changsha, Hunan, 410082, China
| | - Mai He
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronic Science, Hunan University, Changsha, Hunan, 410082, China
| | - Xin Yang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, China
| | - Ziwei Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, China
| | - Xu Chen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physic, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Mingfei Wu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physic, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Yuerui Lu
- Research School of Engineering, College of Engineering and Computer Science, Australian National University, Canberra, ACT, 2601, Australia
| | - Renmin Ma
- State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing, 100871, China
| | - Wei Lu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physic, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, China
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26
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Chen X, Ponraj JS, Fan D, Zhang H. An overview of the optical properties and applications of black phosphorus. NANOSCALE 2020; 12:3513-3534. [PMID: 31904052 DOI: 10.1039/c9nr09122j] [Citation(s) in RCA: 13] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Since the year 2014, when scientists first obtained black phosphorus using a sticky tape to peel the layers off, it has attracted tremendous interest as a novel two-dimensional material. After it was successfully produced, its outstanding optical properties have been unveiled. Various applications based on these properties have been reported. This study mainly reviews the unique optical properties and potential applications of black phosphorus. The optical performances of black phosphorus mainly include linear optical properties and nonlinear optical properties. Some examples include the anisotropic optical response, saturable absorption effect and Kerr effect. The researchers found that the nonlinear saturable absorption coefficients of black phosphorus are better than that of MoS2 and WS2 from the visible region to the near-infrared region. Compared with graphene, black phosphorus has a better nonlinear saturable absorption performance. After passivation or surface modification, black phosphorus is stable when exposed to oxygen and water. Herein, black phosphorus has the potential to be used in detector/sensors, solar energy harvesting, photocatalysts, optical saturable absorbers in ultrafast lasers, all optical switches, optical modulation, nanomedicine and some others in the near future.
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Affiliation(s)
- Xing Chen
- Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, P.R. China.
| | | | - Dianyuan Fan
- Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, P.R. China.
| | - Han Zhang
- Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, P.R. China.
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Chen C, Lu X, Deng B, Chen X, Guo Q, Li C, Ma C, Yuan S, Sung E, Watanabe K, Taniguchi T, Yang L, Xia F. Widely tunable mid-infrared light emission in thin-film black phosphorus. SCIENCE ADVANCES 2020; 6:eaay6134. [PMID: 32110733 PMCID: PMC7021507 DOI: 10.1126/sciadv.aay6134] [Citation(s) in RCA: 26] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/03/2019] [Accepted: 11/25/2019] [Indexed: 05/20/2023]
Abstract
Thin-film black phosphorus (BP) is an attractive material for mid-infrared optoelectronic applications because of its layered nature and a moderate bandgap of around 300 meV. Previous photoconduction demonstrations show that a vertical electric field can effectively reduce the bandgap of thin-film BP, expanding the device operational wavelength range in mid-infrared. Here, we report the widely tunable mid-infrared light emission from a hexagonal boron nitride (hBN)/BP/hBN heterostructure device. With a moderate displacement field up to 0.48 V/nm, the photoluminescence (PL) peak from a ~20-layer BP flake is continuously tuned from 3.7 to 7.7 μm, spanning 4 μm in mid-infrared. The PL emission remains perfectly linear-polarized along the armchair direction regardless of the bias field. Moreover, together with theoretical analysis, we show that the radiative decay probably dominates over other nonradiative decay channels in the PL experiments. Our results reveal the great potential of thin-film BP in future widely tunable, mid-infrared light-emitting and lasing applications.
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Affiliation(s)
- Chen Chen
- Department of Electrical Engineering, Yale University, New Haven, CT 06511, USA
| | - Xiaobo Lu
- Department of Physics, Washington University in St. Louis, St. Louis, MO 63136, USA
| | - Bingchen Deng
- Department of Electrical Engineering, Yale University, New Haven, CT 06511, USA
| | - Xiaolong Chen
- Department of Electrical Engineering, Yale University, New Haven, CT 06511, USA
| | - Qiushi Guo
- Department of Electrical Engineering, Yale University, New Haven, CT 06511, USA
| | - Cheng Li
- Department of Electrical Engineering, Yale University, New Haven, CT 06511, USA
| | - Chao Ma
- Department of Electrical Engineering, Yale University, New Haven, CT 06511, USA
| | - Shaofan Yuan
- Department of Electrical Engineering, Yale University, New Haven, CT 06511, USA
| | - Eric Sung
- Department of Electrical Engineering, Yale University, New Haven, CT 06511, USA
| | - Kenji Watanabe
- National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Li Yang
- Department of Physics, Washington University in St. Louis, St. Louis, MO 63136, USA
| | - Fengnian Xia
- Department of Electrical Engineering, Yale University, New Haven, CT 06511, USA
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28
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Chen J, Wang Q, Liu X, Chen X, Wang L, Yang W. Black phosphorus quantum dots as novel electrogenerated chemiluminescence emitters for the detection of Cu2+. Chem Commun (Camb) 2020; 56:4680-4683. [DOI: 10.1039/d0cc00661k] [Citation(s) in RCA: 20] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/14/2022]
Abstract
Black phosphorus quantum dots with surface states and bandgap luminescence under NMP passivation are used for the detection of Cu2+.
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Affiliation(s)
- Jun Chen
- State Key Laboratory of Chemical Resource Engineering
- Beijing University of Chemical Technology
- Beijing 100029
- P. R. China
| | - Qiaoe Wang
- Key Laboratory of Cosmetic
- Beijing Technology and Business University
- China National Light Industry
- Beijing 100048
- China
| | - Xuejiao Liu
- State Key Laboratory of Chemical Resource Engineering
- Beijing University of Chemical Technology
- Beijing 100029
- P. R. China
| | - Xu Chen
- State Key Laboratory of Chemical Resource Engineering
- Beijing University of Chemical Technology
- Beijing 100029
- P. R. China
| | - Lianying Wang
- State Key Laboratory of Chemical Resource Engineering
- Beijing University of Chemical Technology
- Beijing 100029
- P. R. China
| | - Wensheng Yang
- State Key Laboratory of Chemical Resource Engineering
- Beijing University of Chemical Technology
- Beijing 100029
- P. R. China
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29
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Thurakkal S, Zhang X. Recent Advances in Chemical Functionalization of 2D Black Phosphorous Nanosheets. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2020; 7:1902359. [PMID: 31993294 PMCID: PMC6974947 DOI: 10.1002/advs.201902359] [Citation(s) in RCA: 28] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/01/2019] [Revised: 10/10/2019] [Indexed: 05/25/2023]
Abstract
Owing to their tunable direct bandgap, high charge carrier mobility, and unique in-plane anisotropic structure, black phosphorus nanosheets (BPNSs) have emerged as one of the most important candidates among the 2D materials beyond graphene. However, the poor ambient stability of black phosphorus limits its practical application, due to the chemical degradation of phosphorus atoms to phosphorus oxides in the presence of oxygen and/or water. Chemical functionalization is demonstrated as an efficient approach to enhance the ambient stability of BPNSs. Herein, various covalent strategies including radical addition, nitrene addition, nucleophilic substitution, and metal coordination are summarized. In addition, efficient noncovalent functionalization methods such as van der Waals interactions, electrostatic interactions, and cation-π interactions are described in detail. Furthermore, the preparations, characterization, and diverse applications of functionalized BPNSs in various fields are recapped. The challenges faced and future directions for the chemical functionalization of BPNSs are also highlighted.
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Affiliation(s)
- Shameel Thurakkal
- Division of Chemistry and BiochemistryDepartment of Chemistry and Chemical EngineeringChalmers University of TechnologyKemigården 4SE‐412 96GöteborgSweden
| | - Xiaoyan Zhang
- Division of Chemistry and BiochemistryDepartment of Chemistry and Chemical EngineeringChalmers University of TechnologyKemigården 4SE‐412 96GöteborgSweden
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30
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Li Z, Xu B, Liang D, Pan A. Polarization-Dependent Optical Properties and Optoelectronic Devices of 2D Materials. RESEARCH (WASHINGTON, D.C.) 2020; 2020:5464258. [PMID: 33029588 PMCID: PMC7521027 DOI: 10.34133/2020/5464258] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/22/2020] [Accepted: 07/26/2020] [Indexed: 01/12/2023]
Abstract
The development of optoelectronic devices requires breakthroughs in new material systems and novel device mechanisms, and the demand recently changes from the detection of signal intensity and responsivity to the exploration of sensitivity of polarized state information. Two-dimensional (2D) materials are a rich family exhibiting diverse physical and electronic properties for polarization device applications, including anisotropic materials, valleytronic materials, and other hybrid heterostructures. In this review, we first review the polarized-light-dependent physical mechanism in 2D materials, then present detailed descriptions in optical and optoelectronic properties, involving Raman shift, optical absorption, and light emission and functional optoelectronic devices. Finally, a comment is made on future developments and challenges. The plethora of 2D materials and their heterostructures offers the promise of polarization-dependent scientific discovery and optoelectronic device application.
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Affiliation(s)
- Ziwei Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials and Engineering, Hunan University, Changsha, Hunan 410082, China
| | - Boyi Xu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials and Engineering, Hunan University, Changsha, Hunan 410082, China
| | - Delang Liang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials and Engineering, Hunan University, Changsha, Hunan 410082, China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials and Engineering, Hunan University, Changsha, Hunan 410082, China
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31
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Zong X, Hu H, Ouyang G, Wang J, Shi R, Zhang L, Zeng Q, Zhu C, Chen S, Cheng C, Wang B, Zhang H, Liu Z, Huang W, Wang T, Wang L, Chen X. Black phosphorus-based van der Waals heterostructures for mid-infrared light-emission applications. LIGHT, SCIENCE & APPLICATIONS 2020; 9:114. [PMID: 32637081 PMCID: PMC7329856 DOI: 10.1038/s41377-020-00356-x] [Citation(s) in RCA: 38] [Impact Index Per Article: 9.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/10/2020] [Revised: 06/14/2020] [Accepted: 06/18/2020] [Indexed: 05/10/2023]
Abstract
Mid-infrared (MIR) light-emitting devices play a key role in optical communications, thermal imaging, and material analysis applications. Two-dimensional (2D) materials offer a promising direction for next-generation MIR devices owing to their exotic optical properties, as well as the ultimate thickness limit. More importantly, van der Waals heterostructures-combining the best of various 2D materials at an artificial atomic level-provide many new possibilities for constructing MIR light-emitting devices of large tuneability and high integration. Here, we introduce a simple but novel van der Waals heterostructure for MIR light-emission applications built from thin-film BP and transition metal dichalcogenides (TMDCs), in which BP acts as an MIR light-emission layer. For BP-WSe2 heterostructures, an enhancement of ~200% in the photoluminescence intensities in the MIR region is observed, demonstrating highly efficient energy transfer in this heterostructure with type-I band alignment. For BP-MoS2 heterostructures, a room temperature MIR light-emitting diode (LED) is enabled through the formation of a vertical PN heterojunction at the interface. Our work reveals that the BP-TMDC heterostructure with efficient light emission in the MIR range, either optically or electrically activated, provides a promising platform for infrared light property studies and applications.
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Affiliation(s)
- Xinrong Zong
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, 518055 Shenzhen, China
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, 211816 Nanjing, China
| | - Huamin Hu
- Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, and Key Laboratory for Matter Microstructure and Function of Hunan Province, Hunan Normal University, 410081 Changsha, China
| | - Gang Ouyang
- Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, and Key Laboratory for Matter Microstructure and Function of Hunan Province, Hunan Normal University, 410081 Changsha, China
| | - Jingwei Wang
- Department of Materials Science and Engineering, Southern University of Science and Technology, 518055 Shenzhen, China
| | - Run Shi
- Department of Materials Science and Engineering, Southern University of Science and Technology, 518055 Shenzhen, China
| | - Le Zhang
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, 518055 Shenzhen, China
| | - Qingsheng Zeng
- Center for Programmable Materials School of Materials Science and Engineering Nanyang Technological University, Singapore, 639798 Singapore
| | - Chao Zhu
- Center for Programmable Materials School of Materials Science and Engineering Nanyang Technological University, Singapore, 639798 Singapore
| | - Shouheng Chen
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, 518055 Shenzhen, China
| | - Chun Cheng
- Department of Materials Science and Engineering, Southern University of Science and Technology, 518055 Shenzhen, China
| | - Bing Wang
- Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, 518060 Shenzhen, China
| | - Han Zhang
- Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, 518060 Shenzhen, China
| | - Zheng Liu
- Center for Programmable Materials School of Materials Science and Engineering Nanyang Technological University, Singapore, 639798 Singapore
| | - Wei Huang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, 211816 Nanjing, China
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME), Northwestern Polytechnical University (NPU), 127 West Youyi Road, 710072 Xi’an, China
| | - Taihong Wang
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, 518055 Shenzhen, China
| | - Lin Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, 211816 Nanjing, China
| | - Xiaolong Chen
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, 518055 Shenzhen, China
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