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Wang S, Higashitarumizu N, Sari B, Scott MC, Javey A. Quantitative Mid-infrared Photoluminescence Characterization of Black Phosphorus-Arsenic Alloys. ACS Nano 2024. [PMID: 38335117 DOI: 10.1021/acsnano.3c12927] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/12/2024]
Abstract
Black phosphorus (bP) is a promising material for mid-infrared (mid-IR) optoelectronic applications, exhibiting high performance light emission and detection. Alloying bP with arsenic extends its operation toward longer wavelengths from 3.7 μm (bP) to 5 μm (bP3As7), which is of great practical interest. Quantitative optical characterizations are performed to establish black phosphorus-arsenic (bPAs) alloys optoelectronic quality. Anisotropic optical constants (refractive index, extinction coefficient, and absorption coefficient) of bPAs alloys from near-infrared to mid-IR (0.2-0.9 eV) are extracted with reflection measurements, which helps optical device design. Quantitative photoluminescence (PL) of bPAs alloys with different As concentrations are measured from room temperature to 77 K. PL quantum yield measurements reveal a 2 orders of magnitude decrease in radiative efficiency with increasing As concentration. An optical cavity is designed for bP3As7, which allows for up to an order of magnitude enhancement in the quantum yield due to the Purcell effect. Our comprehensive optical characterization provides the foundation for high performance mid-IR optical device design using bPAs alloys.
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Affiliation(s)
- Shu Wang
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- Berkeley Sensor & Actuator Center, University of California, Berkeley, California 94720, United States
| | - Naoki Higashitarumizu
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- Berkeley Sensor & Actuator Center, University of California, Berkeley, California 94720, United States
- Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, United States
| | - Bengisu Sari
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- The National Center for Electron Microscopy, Molecular Foundry, Berkeley, California 94720, United States
| | - Mary C Scott
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- The National Center for Electron Microscopy, Molecular Foundry, Berkeley, California 94720, United States
| | - Ali Javey
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- Berkeley Sensor & Actuator Center, University of California, Berkeley, California 94720, United States
- Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, United States
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2
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Li Y, Xie J, Wang R, Min S, Xu Z, Ding Y, Su P, Zhang X, Wei L, Li JF, Chu Z, Sun J, Huang C. Textured Asymmetric Membrane Electrode Assemblies of Piezoelectric Phosphorene and Ti 3C 2T x MXene Heterostructures for Enhanced Electrochemical Stability and Kinetics in LIBs. Nanomicro Lett 2024; 16:79. [PMID: 38189993 PMCID: PMC10774488 DOI: 10.1007/s40820-023-01265-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2023] [Accepted: 10/30/2023] [Indexed: 01/09/2024]
Abstract
Black phosphorus with a superior theoretical capacity (2596 mAh g-1) and high conductivity is regarded as one of the powerful candidates for lithium-ion battery (LIB) anode materials, whereas the severe volume expansion and sluggish kinetics still impede its applications in LIBs. By contrast, the exfoliated two-dimensional phosphorene owns negligible volume variation, and its intrinsic piezoelectricity is considered to be beneficial to the Li-ion transfer kinetics, while its positive influence has not been discussed yet. Herein, a phosphorene/MXene heterostructure-textured nanopiezocomposite is proposed with even phosphorene distribution and enhanced piezo-electrochemical coupling as an applicable free-standing asymmetric membrane electrode beyond the skin effect for enhanced Li-ion storage. The experimental and simulation analysis reveals that the embedded phosphorene nanosheets not only provide abundant active sites for Li-ions, but also endow the nanocomposite with favorable piezoelectricity, thus promoting the Li-ion transfer kinetics by generating the piezoelectric field serving as an extra accelerator. By waltzing with the MXene framework, the optimized electrode exhibits enhanced kinetics and stability, achieving stable cycling performances for 1,000 cycles at 2 A g-1, and delivering a high reversible capacity of 524 mAh g-1 at - 20 ℃, indicating the positive influence of the structural merits of self-assembled nanopiezocomposites on promoting stability and kinetics.
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Affiliation(s)
- Yihui Li
- Volta and DiPole Materials Labs, College of Energy, Soochow Institute for Energy and Materials InnovationS (SIEMIS), Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Key Laboratory of Core Technology of High Specific Energy Battery and Key Materials for Petroleum and Chemical Industry, Soochow University, Suzhou, 215006, People's Republic of China
- High Density Materials Technology Center for Flexible Hybrid Electronics, Suzhou Institute of Electronic Functional Materials Technology, Suzhou Industrial Technology Research Institute, Suzhou, 215151, People's Republic of China
| | - Juan Xie
- School of Materials Science and Engineering, Jiangsu University, Zhenjiang, 212013, People's Republic of China
| | - Ruofei Wang
- College of Underwater Acoustic Engineering, Harbin Engineering University, Harbin, 150001, People's Republic of China
| | - Shugang Min
- College of Underwater Acoustic Engineering, Harbin Engineering University, Harbin, 150001, People's Republic of China
| | - Zewen Xu
- Volta and DiPole Materials Labs, College of Energy, Soochow Institute for Energy and Materials InnovationS (SIEMIS), Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Key Laboratory of Core Technology of High Specific Energy Battery and Key Materials for Petroleum and Chemical Industry, Soochow University, Suzhou, 215006, People's Republic of China.
- High Density Materials Technology Center for Flexible Hybrid Electronics, Suzhou Institute of Electronic Functional Materials Technology, Suzhou Industrial Technology Research Institute, Suzhou, 215151, People's Republic of China.
| | - Yangjian Ding
- Volta and DiPole Materials Labs, College of Energy, Soochow Institute for Energy and Materials InnovationS (SIEMIS), Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Key Laboratory of Core Technology of High Specific Energy Battery and Key Materials for Petroleum and Chemical Industry, Soochow University, Suzhou, 215006, People's Republic of China
- High Density Materials Technology Center for Flexible Hybrid Electronics, Suzhou Institute of Electronic Functional Materials Technology, Suzhou Industrial Technology Research Institute, Suzhou, 215151, People's Republic of China
| | - Pengcheng Su
- Volta and DiPole Materials Labs, College of Energy, Soochow Institute for Energy and Materials InnovationS (SIEMIS), Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Key Laboratory of Core Technology of High Specific Energy Battery and Key Materials for Petroleum and Chemical Industry, Soochow University, Suzhou, 215006, People's Republic of China
- High Density Materials Technology Center for Flexible Hybrid Electronics, Suzhou Institute of Electronic Functional Materials Technology, Suzhou Industrial Technology Research Institute, Suzhou, 215151, People's Republic of China
| | - Xingmin Zhang
- Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai, 201204, People's Republic of China
| | - Liyu Wei
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, People's Republic of China
| | - Jing-Feng Li
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, People's Republic of China
| | - Zhaoqiang Chu
- College of Underwater Acoustic Engineering, Harbin Engineering University, Harbin, 150001, People's Republic of China
| | - Jingyu Sun
- Volta and DiPole Materials Labs, College of Energy, Soochow Institute for Energy and Materials InnovationS (SIEMIS), Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Key Laboratory of Core Technology of High Specific Energy Battery and Key Materials for Petroleum and Chemical Industry, Soochow University, Suzhou, 215006, People's Republic of China
| | - Cheng Huang
- Volta and DiPole Materials Labs, College of Energy, Soochow Institute for Energy and Materials InnovationS (SIEMIS), Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Key Laboratory of Core Technology of High Specific Energy Battery and Key Materials for Petroleum and Chemical Industry, Soochow University, Suzhou, 215006, People's Republic of China.
- High Density Materials Technology Center for Flexible Hybrid Electronics, Suzhou Institute of Electronic Functional Materials Technology, Suzhou Industrial Technology Research Institute, Suzhou, 215151, People's Republic of China.
- Institute of Advanced Materials and Institute of Membrane Science and Technology, Jiangsu National Synergistic Innovation Center for Advanced Materials, Suzhou Laboratory and Nanjing Tech University, Nanjing, 211816, People's Republic of China.
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3
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Nie Z, Wang Y, Chen D, Meng S. Unraveling Hidden Charge Density Wave Phases in 1T-TiSe_{2}. Phys Rev Lett 2023; 131:196401. [PMID: 38000430 DOI: 10.1103/physrevlett.131.196401] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/29/2023] [Accepted: 10/02/2023] [Indexed: 11/26/2023]
Abstract
The unexpected chiral order observed in 1T-TiSe_{2} represents an exciting area to explore chirality in condensed matter, while its microscopic mechanism remains elusive. Here, we have identified three metastable collective modes-the so-called single-q modes-in single layer TiSe_{2}, which originate from the unstable phonon eigenvectors at the zone boundary and break the threefold rotational symmetry. We show that polarized laser pulse is a unique and efficient tool to reconstruct the transient potential energy surface, so as to drive phase transitions between these states. By designing sequent layers with chiral stacking order, we propose a practical means to realize chiral charge density waves in 1T-TiSe_{2}. Further, the constructed chiral structure is predicted to exhibit circular dichroism as observed in recent experiments. These facts strongly indicate the chirality transfer from photons to the electron subsystem, meanwhile being strongly coupled to the lattice degree of freedom. Our work provides new insights into understanding and modulating chirality in quantum materials that we hope will spark further experimental investigation.
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Affiliation(s)
- Zhengwei Nie
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Yaxian Wang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Daqiang Chen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Sheng Meng
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
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4
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Zhang L, Zhang X, Mo H, Hong J, Yang S, Zhan Z, Xu C, Zhang Y. Synergistic Modulation between Non-thermal and Thermal Effects in Photothermal Catalysis based on Modified In 2O 3. ACS Appl Mater Interfaces 2023; 15:39304-39318. [PMID: 37556407 DOI: 10.1021/acsami.3c07041] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/11/2023]
Abstract
To promote the solar-energy cascade utilization, it is necessary to increase the thermal effect of irradiation in the catalytic reactions, while simultaneously augmenting the non-thermal effect, so as to fulfill photothermal coupling. Herein, the non-thermal and thermal effect of light radiation on the surface of In2O3-based catalysts are explored and enhanced by the modification of transition metals Fe and Cu. Optical characterizations combined with water-splitting experiments show that Fe doping greatly broadens the radiation response range and enhances the absorption intensity of semiconductors' intrinsic portion, and Cu doping facilitates the absorption of visible-infrared light. The concurrent incorporation of Fe and Cu offers synergistic benefits, resulting in improved radiation response range, carrier separation and migration, as well as higher photothermal temperature upon photoexcitation. Collectively, these advantages comprehensively enhance the photothermal synergistic water-splitting reactivity. The characterizations under variable temperature conditions have demonstrated that the reaction temperature exerts a significant influence on the process of radiation absorption and conversion, ultimately impacting the non-thermal effect. The results of DFT calculations have revealed that the increasing temperature directly impacts the chemical reaction by reducing the energy barrier associated with the rate-determining step. These findings shine new light on the fundamental mechanisms underlying non-thermal and thermal effect, while also imparting significant insights for photo-thermal-coupled catalyst designing.
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Affiliation(s)
- Li Zhang
- State Key Laboratory of Clean Energy Utilization, Zhejiang University, Hangzhou 310027, China
| | - Xuhan Zhang
- State Key Laboratory of Clean Energy Utilization, Zhejiang University, Hangzhou 310027, China
| | - Hongfen Mo
- State Key Laboratory of Clean Energy Utilization, Zhejiang University, Hangzhou 310027, China
| | - Jianan Hong
- State Key Laboratory of Clean Energy Utilization, Zhejiang University, Hangzhou 310027, China
| | - Shunni Yang
- State Key Laboratory of Clean Energy Utilization, Zhejiang University, Hangzhou 310027, China
| | - Zhonghua Zhan
- Reaction Engineering International, Salt Lake City, Utah 84047, United States
| | - Chenyu Xu
- State Key Laboratory of Clean Energy Utilization, Zhejiang University, Hangzhou 310027, China
| | - Yanwei Zhang
- State Key Laboratory of Clean Energy Utilization, Zhejiang University, Hangzhou 310027, China
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5
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Xie X, Ding J, Wu B, Zheng H, Li S, Wang CT, He J, Liu Z, Wang JT, Duan JA, Liu Y. Observation of optical anisotropy and a linear dichroism transition in layered silicon phosphide. Nanoscale 2023. [PMID: 37455620 DOI: 10.1039/d3nr01765f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/18/2023]
Abstract
The investigation of in-plane two-dimensional (2D) anisotropic materials has garnered significant attention due to their exceptional electronic, optical, and mechanical characteristics. The anisotropic optical properties and angle-dependent photodetectors based on 2D anisotropic materials have been extensively studied. However, novel in-plane anisotropic materials still need to be explored to satisfy for distinct environments and devices. Here, we report the remarkable anisotropic behavior of excitons and demonstrate a unique linear-dichroism transition of absorption between ultraviolet and visible light in layered silicon phosphide (SiP) through the analysis of polarization photoluminescence (PL) and absorbance spectra. Its high absorption linear dichroism ratio of 1.16 at 388 nm, 1.15 at 532 nm, and 1.19 at 733 nm is revealed, suggesting the brilliant non-isotropic responses. The robust periodic variation of the A1 and A2 Raman modes in 2D SiP materials allows for the determination of their crystal orientation. Furthermore, the presence of indirect excitons with phonon sidebands in the temperature-dependent PL spectra exhibits non-monotonic energy shifts with increasing temperature, which is attributed to an enhanced electron-phonon interaction and thermal expansion. Our findings provide valuable insights into the fundamental physical properties of layered SiP and offer guidelines for designing polarization-sensitive photodetectors and angle-dependent devices based on 2D anisotropic materials.
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Affiliation(s)
- Xing Xie
- School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China.
- State Key Laboratory of High-Performance Complex Manufacturing, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
| | - Junnan Ding
- School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China.
- State Key Laboratory of High-Performance Complex Manufacturing, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
| | - Biao Wu
- School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China.
- State Key Laboratory of High-Performance Complex Manufacturing, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
| | - Haihong Zheng
- School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China.
- State Key Laboratory of High-Performance Complex Manufacturing, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
| | - Shaofei Li
- School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China.
| | - Chang-Tian Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Jun He
- School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China.
| | - Zongwen Liu
- School of Chemical and Biomolecular Engineering, The University of Sydney, NSW 2006, Australia
- The University of Sydney Nano Institute, The University of Sydney, NSW 2006, Australia
| | - Jian-Tao Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, People's Republic of China
| | - Ji-An Duan
- State Key Laboratory of High-Performance Complex Manufacturing, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
| | - Yanping Liu
- School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China.
- State Key Laboratory of High-Performance Complex Manufacturing, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
- Shenzhen Research Institute of Central South University, Shenzhen 518057, People's Republic of China
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Zhang G, Huang S, Chaves A, Yan H. Black Phosphorus as Tunable Van der Waals Quantum Wells with High Optical Quality. ACS Nano 2023; 17:6073-6080. [PMID: 36912761 DOI: 10.1021/acsnano.3c00904] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Van der Waals quantum wells, naturally formed in two-dimensional layered materials with nanoscale thickness, possess many inherent advantages over conventional molecular beam epitaxy grown counterparts, and could bring up intriguing physics and applications. However, optical transitions originated from the series of quantized states in these emerging quantum wells are still elusive. Here, we show that multilayer black phosphorus appears to be an excellent candidate for van der Waals quantum wells with well-defined subbands and high optical quality. Using infrared absorption spectroscopy, we probe subband structures of multilayer black phosphorus with tens of atomic layers, revealing clear signatures for optical transitions with subband index as high as 10, far from what was attainable previously. Surprisingly, in addition to allowed transitions, an unexpected series of "forbidden" transitions is also evidently observed, which enables us to determine energy spacings separately for conduction and valence subbands. Furthermore, the linear tunability of subband spacings by temperature and strain is demonstrated. Our results are expected to facilitate potential applications for infrared optoelectronics based on tunable van der Waals quantum wells.
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Affiliation(s)
- Guowei Zhang
- Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an 710072, Shaanxi, China
| | - Shenyang Huang
- Department of Physics, State Key Laboratory of Surface Physics and Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education), Fudan University, Shanghai 200433, China
- Institute of Optoelectronics, Fudan University, Shanghai 200433, China
| | - Andrey Chaves
- Departamento de Física, Universidade Federal do Ceará, Caixa Postal 6030, 60455-760 Fortaleza, Ceará, Brazil
- Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
| | - Hugen Yan
- Department of Physics, State Key Laboratory of Surface Physics and Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education), Fudan University, Shanghai 200433, China
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Zhang L, Wang H, Zong X, Zhou Y, Wang T, Wang L, Chen X. Probing interlayer shear thermal deformation in atomically-thin van der Waals layered materials. Nat Commun 2022; 13:3996. [PMID: 35810154 PMCID: PMC9271035 DOI: 10.1038/s41467-022-31682-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/24/2021] [Accepted: 06/17/2022] [Indexed: 11/09/2022] Open
Abstract
Atomically-thin van der Waals layered materials, with both high in-plane stiffness and bending flexibility, offer a unique platform for thermomechanical engineering. However, the lack of effective characterization techniques hinders the development of this research topic. Here, we develop a direct experimental method and effective theoretical model to study the mechanical, thermal, and interlayer properties of van der Waals materials. This is accomplished by using a carefully designed WSe2-based heterostructure, where monolayer WSe2 serves as an in-situ strain meter. Combining experimental results and theoretical modelling, we are able to resolve the shear deformation and interlayer shear thermal deformation of each individual layer quantitatively in van der Waals materials. Our approach also provides important interlayer coupling information as well as key thermal parameters. The model can be applied to van der Waals materials with different layer numbers and various boundary conditions for both thermally-induced and mechanically-induced deformations. Van der Waals materials exhibit unique thermomechanical properties, but interlayer deformations are usually challenging to measure. Here, the authors exploit the strain-dependent optical properties of monolayer WSe2 to quantitatively probe the interlayer shear thermal deformations and interlayer coupling in phosphorene and hexagonal boron nitride.
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Affiliation(s)
- Le Zhang
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, 1088 Xueyuan Avenue, 518055, Shenzhen, P.R. China
| | - Han Wang
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, 1088 Xueyuan Avenue, 518055, Shenzhen, P.R. China
| | - Xinrong Zong
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, 211816, Nanjing, P.R. China
| | - Yongheng Zhou
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, 1088 Xueyuan Avenue, 518055, Shenzhen, P.R. China
| | - Taihong Wang
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, 1088 Xueyuan Avenue, 518055, Shenzhen, P.R. China
| | - Lin Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, 211816, Nanjing, P.R. China.
| | - Xiaolong Chen
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, 1088 Xueyuan Avenue, 518055, Shenzhen, P.R. China.
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8
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Montanaro A, Giusti F, Zanfrognini M, Di Pietro P, Glerean F, Jarc G, Rigoni EM, Mathengattil SY, Varsano D, Rontani M, Perucchi A, Molinari E, Fausti D. Anomalous non-equilibrium response in black phosphorus to sub-gap mid-infrared excitation. Nat Commun 2022; 13:2667. [PMID: 35562345 DOI: 10.1038/s41467-022-30341-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/04/2021] [Accepted: 04/27/2022] [Indexed: 12/02/2022] Open
Abstract
The competition between the electron-hole Coulomb attraction and the 3D dielectric screening dictates the optical properties of layered semiconductors. In low-dimensional materials, the equilibrium dielectric environment can be significantly altered by the ultrafast excitation of photo-carriers, leading to renormalized band gap and exciton binding energies. Recently, black phosphorus emerged as a 2D material with strongly layer-dependent electronic properties. Here, we resolve the response of bulk black phosphorus to mid-infrared pulses tuned across the band gap. We find that, while above-gap excitation leads to a broadband light-induced transparency, sub-gap pulses drive an anomalous response, peaked at the single-layer exciton resonance. With the support of DFT calculations, we tentatively ascribe this experimental evidence to a non-adiabatic modification of the screening environment. Our work heralds the non-adiabatic optical manipulation of the electronic properties of 2D materials, which is of great relevance for the engineering of versatile van der Waals materials. Here, the authors investigate the optical response of bulk black phosphorus to mid-infrared pulses, and find that while above-gap excitation leads to a broadband light-induced transparency, sub-gap pulses drive an anomalous response, peaked at the single-layer exciton resonance.
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Huang S, Lu Y, Wang F, Lei Y, Song C, Zhang J, Xing Q, Wang C, Xie Y, Mu L, Zhang G, Yan H, Chen B, Yan H. Layer-Dependent Pressure Effect on the Electronic Structure of 2D Black Phosphorus. Phys Rev Lett 2021; 127:186401. [PMID: 34767429 DOI: 10.1103/physrevlett.127.186401] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/29/2021] [Accepted: 09/21/2021] [Indexed: 06/13/2023]
Abstract
Through infrared spectroscopy, we systematically study the pressure effect on electronic structures of few-layer black phosphorus (BP) with layer number ranging from 2 to 13. We reveal that the pressure-induced shift of optical transitions exhibits strong layer dependence. In sharp contrast to the bulk counterpart which undergoes a semiconductor to semimetal transition under ∼1.8 GPa, the band gap of 2 L increases with increasing pressure until beyond 2 GPa. Meanwhile, for a sample with a given layer number, the pressure-induced shift also differs for transitions with different indices. Through the tight-binding model in conjunction with a Morse potential for the interlayer coupling, this layer- and transition-index-dependent pressure effect can be fully accounted. Our study paves a way for versatile van der Waals engineering of two-dimensional BP.
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Affiliation(s)
- Shenyang Huang
- State Key Laboratory of Surface Physics, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai 200433, China
| | - Yang Lu
- Center for High Pressure Science & Technology Advanced Research, Shanghai 201203, China
| | - Fanjie Wang
- State Key Laboratory of Surface Physics, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai 200433, China
| | - Yuchen Lei
- State Key Laboratory of Surface Physics, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai 200433, China
| | - Chaoyu Song
- State Key Laboratory of Surface Physics, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai 200433, China
| | - Jiasheng Zhang
- State Key Laboratory of Surface Physics, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai 200433, China
| | - Qiaoxia Xing
- State Key Laboratory of Surface Physics, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai 200433, China
| | - Chong Wang
- State Key Laboratory of Surface Physics, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai 200433, China
| | - Yuangang Xie
- State Key Laboratory of Surface Physics, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai 200433, China
| | - Lei Mu
- State Key Laboratory of Surface Physics, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai 200433, China
| | - Guowei Zhang
- Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an 710072, China
| | - Hao Yan
- CAS Key Laboratory of Experimental Study under Deep-sea Extreme Conditions, Institute of Deep-Sea Science and Engineering, Chinese Academy of Sciences, Sanya 572000, China
| | - Bin Chen
- Center for High Pressure Science & Technology Advanced Research, Shanghai 201203, China
| | - Hugen Yan
- State Key Laboratory of Surface Physics, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai 200433, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
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Zou B, Wei Y, Zhou Y, Ke D, Zhang X, Zhang M, Yip CT, Chen X, Li W, Sun H. Unambiguous determination of crystal orientation in black phosphorus by angle-resolved polarized Raman spectroscopy. Nanoscale Horiz 2021; 6:809-818. [PMID: 34350925 DOI: 10.1039/d1nh00220a] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Angle-resolved polarized Raman spectroscopy (ARPRS) is widely used to determine the crystal orientations of anisotropic layered materials (ALMs), which is an essential step to study all of their anisotropic properties. However, the understanding of the ARPRS response of black phosphorous (BP) as a most widely studied ALM is still unsatisfactory. Here, we clarify two key controversies about the physical origin of the intricate ARPRS response and the determination of crystal orientations in BP. Through systematic ARPRS measurements, we show that the degree of anisotropy of the response evolves gradually and periodically with the BP thickness, eventually leading to the intricate response. Meanwhile, we find that using the Raman peak intensity ratio of the two Ag phonon modes, the crystal orientations of BP can be unambiguously distinguished via a concise inequality . Comprehensive analysis and first-principles calculations reveal that the external anisotropic interference effect and the intrinsic electron-phonon coupling are responsible for the observations.
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Affiliation(s)
- Bo Zou
- School of Science and Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System, Harbin Institute of Technology, Shenzhen, 518055, China.
| | - Yadong Wei
- School of Physics, Harbin Institute of Technology, Harbin, 150001, China.
| | - Yan Zhou
- Center for High Pressure Science & Technology Advanced Research, Shanghai 201203, China
| | - Dingning Ke
- Experiment and Innovation Center, Harbin Institute of Technology Shenzhen Graduate School, Shenzhen, 518055, China
| | - Xu Zhang
- School of Science and Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System, Harbin Institute of Technology, Shenzhen, 518055, China.
| | - Meng Zhang
- School of Science and Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System, Harbin Institute of Technology, Shenzhen, 518055, China.
| | - Cho-Tung Yip
- School of Science and Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System, Harbin Institute of Technology, Shenzhen, 518055, China.
| | - Xiaobin Chen
- School of Science and Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System, Harbin Institute of Technology, Shenzhen, 518055, China.
| | - Weiqi Li
- School of Physics, Harbin Institute of Technology, Harbin, 150001, China.
| | - Huarui Sun
- School of Science and Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System, Harbin Institute of Technology, Shenzhen, 518055, China.
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Wang F, Wang C, Chaves A, Song C, Zhang G, Huang S, Lei Y, Xing Q, Mu L, Xie Y, Yan H. Prediction of hyperbolic exciton-polaritons in monolayer black phosphorus. Nat Commun 2021; 12:5628. [PMID: 34561443 DOI: 10.1038/s41467-021-25941-5] [Citation(s) in RCA: 17] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/27/2021] [Accepted: 09/10/2021] [Indexed: 11/08/2022] Open
Abstract
Hyperbolic polaritons exhibit large photonic density of states and can be collimated in certain propagation directions. The majority of hyperbolic polaritons are sustained in man-made metamaterials. However, natural-occurring hyperbolic materials also exist. Particularly, natural in-plane hyperbolic polaritons in layered materials have been demonstrated in MoO3 and WTe2, which are based on phonon and plasmon resonances respectively. Here, by determining the anisotropic optical conductivity (dielectric function) through optical spectroscopy, we predict that monolayer black phosphorus naturally hosts hyperbolic exciton-polaritons due to the pronounced in-plane anisotropy and strong exciton resonances. We simultaneously observe a strong and sharp ground state exciton peak and weaker excited states in high quality monolayer samples in the reflection spectrum, which enables us to determine the exciton binding energy of ~452 meV. Our work provides another appealing platform for the in-plane natural hyperbolic polaritons, which is based on excitons rather than phonons or plasmons. Naturally occurring hyperbolic polaritons exist in a class of layered materials. Here, the authors show evidence, via optical spectroscopy, of hyperbolic exciton-polaritons in phosphorene, originating from its in-plane anisotropy and strong exciton resonances.
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Abstract
We report the first-principles study of small polarons in the most stable two-dimensional pnictogen allotropes: blue and black phosphorene and arsenene. While both cations and anions of small hydrogen-passivated clusters show charge localization and local lattice distortions, only the hole polaron in the blue allotrope is stable in the infinite size cluster limit. The adiabatic polaron relaxation energy is found to be 0.1 eV for phosphorene and 0.15 eV for arsenene. The polaron is localized on lone-pair orbitals with half of the extra charge distributed among 13 atoms. In the blue phosphorene, these orbitals form the valence band's top with a relatively flat band dispersion. However, in the black phosphorene, lone-pair orbitals hybridize with bonding orbitals, which explains the difference in hole localization strength between the two topologically equivalent allotropes. The polaron's adiabatic barriers for motion are small compared to the most strongly coupled phonon frequency, implying the polaron barrierless motion.
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Affiliation(s)
| | - Sergey Levchenko
- Skolkovo Institute of Science and Technology, Moscow 143026, Russia
| | - Vasili Perebeinos
- Department of Electrical Engineering, University at Buffalo, Buffalo, New York 14260, United States
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