First Observation of Ferroelectricity in ∼1 nm Ultrathin Semiconducting BaTiO3 Films

Novel 2DEG System at the HfO2/STO Interface

Multifunctional integration in a single device has always been a hot research topic, especially for contradictory phenomena, one of which is the coexistence of ferroelectricity and metallicity. The complex oxide heterostructures, as symmetric breaking systems, provide a great possibility to incorporate different properties. Moreover, finding a series of oxide heterostructures to achieve this goal remains as a challenge. Here, taking the advantage of different physical phenomena, we use H2 plasma to pretreat the SrTiO3 (STO) substrate and then fabricate HfO2/STO heterostructures with it. The novel, well-repeatable metallic two-dimensional electron gas (2DEG) is directly obtained at the heterointerfaces without any further complex procedures, while the obvious ferroelectric-like behavior and Rashba spin-orbit coupling are also observed. The understanding of the mechanism, as well as the modified facile preparation procedure, would be meaningful for further development of ferroelectric metal in complex oxide heterostructures.

First-Principles Study on Evolution of Magnetic Domain in Two-Dimensional BaTiO3 Ultrathin Film Doped with Co under Electric Field

The magnetization mechanism of Co-doped BaTiO3 ultrathin films is a subject of debate, which results in difficulties with the design of new multiferroics based on BaTiO3 matrixes. With the aid of a first-principles approach, it was observed that when the interstitial site and Ti vacancy were filled with Co, the configuration behaved in a nonmagnetic manner, indicating the significance of the Co content. Moreover, in the case of Co substituting two neighboring Ti atoms, when a direct current field was applied in the [100] direction, the magnetic domains excluding those in the [100], [010], and [001] directions were directed away. Further, the magnetoelectric constant was evaluated at ~449.3 mV/cmOe, showing strong magnetoelectric coupling at room temperature. Clearly, our study indicates that strict control of Ba, Ti, O, and Co stoichiometry can induce an electric and magnetic field conversion in two-dimensional BaTiO3 and may provide a new candidate for single-phase multiferroics for application in next-generation multifunctional devices.

Enabling ultra-low-voltage switching in BaTiO3

Single crystals of BaTiO₃ exhibit small switching fields and energies, but thin-film performance is considerably worse, thus precluding their use in next-generation devices. Here, we demonstrate high-quality BaTiO₃ thin films with nearly bulk-like properties. Thickness scaling provides access to the coercive voltages (<100 mV) and fields (<10 kV cm^-1) required for future applications and results in a switching energy of <2 J cm^-3 (corresponding to <2 aJ per bit in a 10 × 10 × 10 nm³ device). While reduction in film thickness reduces coercive voltage, it does so at the expense of remanent polarization. Depolarization fields impact polar state stability in thicker films but fortunately suppress the coercive field, thus driving a deviation from Janovec-Kay-Dunn scaling and enabling a constant coercive field for films <150 nm in thickness. Switching studies reveal fast speeds (switching times of ~2 ns for 25-nm-thick films with 5-µm-diameter capacitors) and a pathway to subnanosecond switching. Finally, integration of BaTiO₃ thin films onto silicon substrates is shown. We also discuss what remains to be demonstrated to enable the use of these materials for next-generation devices.

Hafnium Oxide (HfO2 ) - A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories

Hafnium oxide (HfO₂ ) is one of the mature high-k dielectrics that has been standing strong in the memory arena over the last two decades. Its dielectric properties have been researched rigorously for the development of flash memory devices. In this review, the application of HfO₂ in two main emerging nonvolatile memory technologies is surveyed, namely resistive random access memory and ferroelectric memory. How the properties of HfO₂ equip the former to achieve superlative performance with high-speed reliable switching, excellent endurance, and retention is discussed. The parameters to control HfO₂ domains are further discussed, which can unleash the ferroelectric properties in memory applications. Finally, the prospect of HfO₂ materials in emerging applications, such as high-density memory and neuromorphic devices are examined, and the various challenges of HfO₂ -based resistive random access memory and ferroelectric memory devices are addressed with a future outlook.

Hysteretic temperature dependence of resistance controlled by gate voltage in LaAlO3/SrTiO3 heterointerface electron system

For two-dimensional electron gas device applications, it is important to understand how electrical-transport properties are controlled by gate voltage. Here, we report gate voltage-controllable hysteresis in the resistance–temperature characteristics of two-dimensional electron gas at LaAlO₃/SrTiO₃ heterointerface. Electron channels made of the LaAlO₃/SrTiO₃ heterointerface showed hysteretic resistance–temperature behavior: the measured resistance was significantly higher during upward temperature sweeps in thermal cycling tests. Such hysteretic behavior was observed only after application of positive back-gate voltages below 50 K in the thermal cycle, and the magnitude of hysteresis increased with the applied back-gate voltage. To explain this gate-controlled resistance hysteresis, we propose a mechanism based on electron trapping at impurity sites, in conjunction with the strong temperature-dependent dielectric constant of the SrTiO₃ substrate. Our model explains well the observed gate-controlled hysteresis of the resistance–temperature characteristics, and the mechanism should be also applicable to other SrTiO₃-based oxide systems, paving the way to applications of oxide heterostructures to electronic devices.

Review on Recent Developments in 2D Ferroelectrics: Theories and Applications

Although only a few 2D materials have been predicted to possess ferroelectricity, 2D ferroelectrics are expected to play a dominant role in the upcoming nano era as important functional materials. The ferroelectric properties of 2D ferroelectrics are significantly different than those of traditional bulk ferroelectrics owing to their intrinsic size and surface effects. To date, 2D ferroelectrics have been reported to exhibit diverse properties ranging from bulk photovoltaic and piezoelectric/pyroelectric effects to the spontaneous valley and spin polarization. These properties are either dependent on ferroelectric polarization or coupled with it for easy electric control, thus making 2D ferroelectrics applicable to multifunctional nanodevices. At present, cumulative efforts are being made to explore 2D ferroelectrics in theories, experiments, and applications. Herein, such theories and methods are briefly introduced. Subsequently, intrinsic and extrinsic origins of 2D ferroelectricity are separately summarized. In addition, invented or laboratory-validated 2D ferroelectric-based applications are listed. Finally, the existing challenges and prospects of 2D ferroelectrics are discussed.

Prediction of Intrinsic Ferroelectricity and Large Piezoelectricity in Monolayer Arsenic Chalcogenides

Two-dimensional materials that exhibit spontaneous electric polarization are of notable interest for functional materials. However, despite the prediction of many two-dimensional polar materials, the number of experimentally confirmed two-dimensional ferroelectrics is far less than bulk ferroelectrics. We provide strong evidence that the Pmn2₁ phase of arsenic chalcogenides As₂X₃ (X = S, Se, and Te), which include the recently isolated monolayer orpiment, are intrinsic ferroelectrics and demonstrate strong in-plane piezoelectricity. We found the calculated energy barriers for collectively reversing the electric polarization or moving a 180° domain wall are reasonable compared to previously reported ferroelectrics. We propose a high-symmetry structure (with Pmmn space group) that transforms into the ferroelectric Pmn2₁ phase by a soft B_2u phonon mode. By studying other soft modes of the high-symmetry Pmmn structure, we identify several undiscovered metastable polymorphs, including a polar phase (with a P2₁ space group) with sizable piezoelectricity.

Emergent Ferroelectricity in Otherwise Nonferroelectric Oxides by Oxygen Vacancy Design at Heterointerfaces

Introducing point defects in complex metal oxides is a very effective route to engineer crystal symmetry and therefore control physical properties. However, the inversion symmetry breaking, which is vital for many tantalizing properties, such as ferroelectricity and chiral spin structure, is usually hard to be induced in the bulk crystal by point defects. By designing the oxygen vacancy formation energy profile and migration path across the oxide heterostructure, our first-principles density functional theory (DFT) calculations demonstrate that the point defects can effectively break the inversion symmetry and hence create novel ferroelectricity in superlattices consisting of otherwise nonferroelectric materials SrTiO₃ and SrRuO₃. This induced ferroelectricity can be significantly enhanced by reducing the SrTiO₃ thickness. Inspired by theory calculation, SrTiO₃/SrRuO₃ superlattices were experimentally fabricated and are found to exhibit surprising strong ferroelectric properties. Our finding paves a simple and effective pathway to engineer the inversion symmetry and thus properties by point defect control in oxide heterostructures.

Purely in-plane ferroelectricity in monolayer SnS at room temperature

2D van der Waals ferroelectrics have emerged as an attractive building block with immense potential to provide multifunctionality in nanoelectronics. Although several accomplishments have been reported in ferroelectric switching for out-of-plane ferroelectrics down to the monolayer, a purely in-plane ferroelectric has not been experimentally validated at the monolayer thickness. Herein, an in-plane ferroelectricity is demonstrated for micrometer-size monolayer SnS at room temperature. SnS has been commonly regarded to exhibit the odd–even effect, where the centrosymmetry breaks only in the odd-number layers to exhibit ferroelectricity. Remarkably, however, a robust room temperature ferroelectricity exists in SnS below a critical thickness of 15 layers with both an odd and even number of layers, suggesting the possibility of controlling the stacking sequence of multilayer SnS beyond the limit of ferroelectricity in the monolayer. This work will pave the way for nanoscale ferroelectric applications based on SnS as a platform for in-plane ferroelectrics.

Out-of-plane ferroelectricity is usually unstable in the two dimensional limit due to the presence of the depolarization field. Here, the authors successfully circumvent this issue by growing µm-sized SnS monolayers that exhibit in-plane ferroelectricity that is stable at room temperature.

Unusual Hole and Electron Midgap States and Orbital Reconstructions Induced Huge Ferroelectric Tunneling Electroresistance in BaTiO3/SrTiO3

Oxide heterostructures have attracted a lot of interest because of their rich exotic phenomena and potential applications. Recently, a greatly enhanced tunneling electroresistance (TER) of ferroelectric tunnel junctions (FTJs) has been realized in such heterostructures. However, our understanding on the electronic structure of resistance response with polarization reversal and the origin of huge TER is still lacking. Here, we report on electronic structures, particularly at the interface and surface, and the control of the spontaneous polarization of BaTiO₃ films by changing the termination of a SrTiO₃ substrate. Interestingly, unusual electron and hole midgap states are concurrently formed and accompanied by orbital reconstructions, which determine the ferroelectric polarization orientation in the BaTiO₃/SrTiO₃. Such unusual midgap states, which yield a strong electronic screening effect, reduce the ferroelectric barrier width and height, and pin the ferroelectric polarization, lead to a dramatic enhancement of the TER effect. The midgap states are also observed in BaTiO₃ films on electron-doped Nb/SrTiO₃ revealing its universality. Our result provides new insight into the origin of the huge TER effect and opens a new route for designing ferroelectric tunnel junction-based devices with huge TER through interface engineering.