Multiwavelength Single Nanowire InGaAs/InP Quantum Well Light-Emitting Diodes

An efficient modeling workflow for high-performance nanowire single-photon avalanche detector

Single-photon detector (SPD), an essential building block of the quantum communication system, plays a fundamental role in developing next-generation quantum technologies. In this work, we propose an efficient modeling workflow of nanowire SPDs utilizing avalanche breakdown at reverse-biased conditions. The proposed workflow is explored to maximize computational efficiency and balance time-consuming drift-diffusion simulation with fast script-based post-processing. Without excessive computational effort, we could predict a suite of key device performance metrics, including breakdown voltage, dark/light avalanche built-up time, photon detection efficiency, dark count rate, and the deterministic part of timing jitter due to device structures. Implementing the proposed workflow onto a single InP nanowire and comparing it to the extensively studied planar devices and superconducting nanowire SPDs, we showed the great potential of nanowire avalanche SPD to outperform their planar counterparts and obtain as superior performance as superconducting nanowires, i.e. achieve a high photon detection efficiency of 70% with a dark count rate less than 20 Hz at non-cryogenic temperature. The proposed workflow is not limited to single-nanowire or nanowire-based device modeling and can be readily extended to more complicated two-/three dimensional structures.

Thin SnxNiyOz Films as p-Type Transparent Conducting Oxide and Their Application in Light-Emitting Diodes

The development of good-quality p-type transparent conducting oxides (TCOs) is essential to realize the full potential of TCOs for transparent electronics. This study investigates various optical and electrical properties of Sn_xNi_yO_z under different deposition conditions to achieve high-performance p-type TCOs. We found that a film with 20% O₂/Ar deposited at room temperature exhibits the highest p-type conductivity with a carrier concentration of 2.04 × 10¹⁷ cm^-3, a resistivity of 14.01 Ωcm, and a Hall mobility of 7.7 cm² V^-1 S^-1. We also studied the elemental properties of a Sn_xNi_yO_z film and the band alignment at the Sn_xNi_yO_z/InP interface and found reasonably large values of the conduction band offset (CBO) and valence band offset (VBO). Finally, we demonstrate stable light-emitting diodes (LEDs) with n-InP nanowires (NWs) conformably coated with a p-Sn_xNi_yO_z structure. Several films and devices were fabricated and tested over a span of 6 months, and we observed similar characteristics. This confirms the stability and reliability of the films as well as the reproducibility of the LEDs. We also investigated the temperature-dependent behavior of these LEDs and observed an additional peak due to a zinc blende/wurtzite (ZB/WZ) transition at the InP substrate and NW interface at ∼98 K and below. This study provides promising results of Sn_xNi_yO_z as a potential p-type TCO candidate for applications in electronics and optoelectronics.

InP nanowire light-emitting diodes with different pn-junction structures

We report on the characterization of wurtzite (WZ) InP nanowire (NW) light-emitting diodes (LEDs) with different pn junctions (axial and radial). The series resistance tended to be smaller in the NW-LED using core-shell InP NWs with a radial pn junction than in the NW-LED using InP NWs with an axial pn junction, indicating that radial pn junctions are more suitable for current injection. The electroluminescence (EL) properties of both NW LEDs revealed that the EL had three peaks originating from the zinc-blende (ZB) phase, WZ phase, and ZB/WZ heterojunction. Transmission electron microscopy showed that the dominant EL in the radial pn junction originated from the ZB/WZ interface across the stacking faults.

Flexible InP-ZnO nanowire heterojunction light emitting diodes

Flexible, substrate-free nanowire (NW) devices are desirable to overcome the extremely challenging task of integrating III-V or III-N semiconductor devices such as LEDs and lasers on a range of optoelectronic circuits or biochips. In this work, we report the demonstration of core-shell p-InP/n-ZnO heterojunction NW array LEDs. The emission from the devices consists of three peaks at room temperature due to conduction band-to-heavy hole band transition, conduction band-to-light hole band transition and recombination at the substrate. At 78 K, an additional peak due to Zn acceptor levels is observed, whereas the peak due to the conduction band-to-light hole band transition quenches. Flexible LEDs are then fabricated by embedding the NW arrays in SU-8 to enable subsequent lift-off from the substrate. Compared with the original on-substrate LED device, broader, red-shifted and multiple peaks are observed from the flexible devices, which may be due to non-uniform strain related effects in the NWs caused by the SU-8 film. A slightly higher series resistance as compared to the on-substrate device and significant Joule heating suggest that good heatsinking is required for these flexible devices. Nevertheless, our study paves a promising way towards flexible and low power LEDs.

Waveguide coupled III-V photodiodes monolithically integrated on Si

The seamless integration of III-V nanostructures on silicon is a long-standing goal and an important step towards integrated optical links. In the present work, we demonstrate scaled and waveguide coupled III-V photodiodes monolithically integrated on Si, implemented as InP/In_0.5Ga_0.5As/InP p-i-n heterostructures. The waveguide coupled devices show a dark current down to 0.048 A/cm² at -1 V and a responsivity up to 0.2 A/W at -2 V. Using grating couplers centered around 1320 nm, we demonstrate high-speed detection with a cutoff frequency f_3dB exceeding 70 GHz and data reception at 50 GBd with OOK and 4PAM. When operated in forward bias as a light emitting diode, the devices emit light centered at 1550 nm. Furthermore, we also investigate the self-heating of the devices using scanning thermal microscopy and find a temperature increase of only ~15 K during the device operation as emitter, in accordance with thermal simulation results.

Injection-free multiwavelength electroluminescence devices based on monolayer semiconductors driven by an alternating field

Two-dimensional (2D) semiconductors have emerged as promising candidates for various optoelectronic devices especially electroluminescent (EL) devices. However, progress has been hampered by many challenges including metal contacts and injection, transport, and confinement of carriers due to small sizes of materials and the lack of proper double heterostructures. Here, we propose and demonstrate an alternative approach to conventional current injection devices. We take advantage of large exciton binding energies in 2D materials using impact generation of excitons through an alternating electric field, without requiring metal contacts to 2D materials. The conversion efficiency, defined as the ratio of the emitted photons to the preexisting carriers, can reach 16% at room temperature. In addition, we demonstrate the first multiwavelength 2D EL device, simultaneously operating at three wavelengths from red to near-infrared. Our approach provides an alternative to conventional current-based devices and could unleash the great potential of 2D materials for EL devices.

Continuous-wave operation of an electrically pumped single microribbon based Fabry-Perot microlaser

Fabry-Perot (FP) mode microlasers have been popularized and applied widely in on-chip coherent light sources because of the unique advantages of directional output emission. In this work, a heterojunction light-emitting diode (LED) made of a Ga-doped ZnO (ZnO:Ga) microribbon and p-GaAs template is fabricated. And its electroluminescence characteristics of strong coupling of exciton-photon and polariton lasing, in the blue-violet spectrum, were demonstrated under continuous-wave operation of an electrical injection. In the device structure, a single microribbon with a rectangular-shaped cross section can achieve the FP-mode lasing action by the optical oscillation between the two lateral sides of the microcrystals in the ultraviolet spectrum. As the reverse-current is below the threshold value, the device can have radiative polaritonic lighting directly from bilateral sides of the microribbon, yielding strong coupling between excitons and FP-mode microresonator. And the exciton-polariton coupling strengths characterized by a Rabi splitting energy were extracted to be 500 meV. Further, when the input current increased more than a certain value, strong laser illuminating developed as two sharp peaks at the lower energy shoulder of the spontaneous emission peak, and these oscillating modes can dominate the waveguide EL spectra. The experimental results can provide us with further unambiguous evidence that the lasing is originated from the polariton resonances for the microribbon with strong exciton-polariton coupling. Since single microribbon based optical FP-mode microresonators do not require additional feedback mirrors, their compact size and resulting low thresholds make them a powerful candidate to construct on-chip coherent light sources for future integrated nanophotonic and optoelectronic circuitry.

Facet-dependent growth of InAsP quantum wells in InP nanowire and nanomembrane arrays

Selective area epitaxy is a powerful growth technique that has been used to produce III-V semiconductor nanowire and nanomembrane arrays for photonic and electronic applications. The incorporation of a heterostructure such as quantum wells (QWs) brings new functionality and further broadens their applications. Using InP nanowires and nanomembranes as templates, we investigate the growth of InAsP QWs on these pure wurtzite nanostructures. InAsP QWs grow both axially and laterally on the nanowires and nanomembranes, forming a zinc blende phase axially and wurtzite phase on the sidewalls. On the non-polar {11[combining macron]00} sidewalls, the radial QW selectively grows on one sidewall which is located at the semi-polar 〈112[combining macron]〉 A side of the axial QW, causing the shape evolution of the nanowires from hexagonal to triangular cross section. For nanomembranes with {11[combining macron]00} sidewalls, the radial QW grows asymmetrically on the {11[combining macron]00} facet, destroying their symmetry. In comparison, nanomembranes with {112[combining macron]0} sidewalls are shown to be an ideal template for the growth of InAsP QWs, thanks to the uniform QW formation. These QWs emit strongly in the near IR region at room temperature and their emission can be tuned by changing their thickness or composition. These findings enrich our understanding of the QW growth, which provides new insights for heterostructure design in other III-V nanostructures.

Implementing an Insect Brain Computational Circuit Using III-V Nanowire Components in a Single Shared Waveguide Optical Network

Recent developments in photonics include efficient nanoscale optoelectronic components and novel methods for subwavelength light manipulation. Here, we explore the potential offered by such devices as a substrate for neuromorphic computing. We propose an artificial neural network in which the weighted connectivity between nodes is achieved by emitting and receiving overlapping light signals inside a shared quasi 2D waveguide. This decreases the circuit footprint by at least an order of magnitude compared to existing optical solutions. The reception, evaluation, and emission of the optical signals are performed by neuron-like nodes constructed from known, highly efficient III-V nanowire optoelectronics. This minimizes power consumption of the network. To demonstrate the concept, we build a computational model based on an anatomically correct, functioning model of the central-complex navigation circuit of the insect brain. We simulate in detail the optical and electronic parts required to reproduce the connectivity of the central part of this network using previously experimentally derived parameters. The results are used as input in the full model, and we demonstrate that the functionality is preserved. Our approach points to a general method for drastically reducing the footprint and improving power efficiency of optoelectronic neural networks, leveraging the superior speed and energy efficiency of light as a carrier of information.

Demonstration of InP/InAsP/InP axial heterostructure nanowire array vertical LEDs

Semiconductor nanowires (NWs), which have nanoscale footprints, enable us to realize various quantum structures with excellent position and size controllability, utilizing a wide range of materials for heterostructures. In addition, enhancing light extraction and controlling spontaneous emission by modifying their size and shape are possible. Thus, NWs are promising materials for nanoscale light sources applicable from visible to telecommunication bands. In this study, we grew InP/InAsP/InP axial heterostructure NWs, where the InAsP layer was embedded to serve as an active layer, by selective-area growth and demonstrated vertical NW array light-emitting diodes (LEDs) as a step towards realizing on-demand single photon sources. The NW array LEDs showed rectifying characteristics and electroluminescence originating from the embedded InAsP layer in the near-infrared region.

Cathodoluminescence visualisation of local thickness variations of GaAs/AlGaAs quantum-well tubes on nanowires

We present spatially and spectrally resolved emission from nanowires with a thin radial layer of GaAs embedded in AlGaAs barriers, grown radially around taper-free GaAs cores. The GaAs layers are thin enough to show quantization, and are quantum wells. Due to their shape, they are referred to as quantum well tubes (QWTs). We have investigated three different nominal QWT thicknesses: 1.5, 2.0, and 6.0 nm. They all show average emission spectra from the QWT with an energy spread corresponding to a thickness variation of ±30%. We observe no thickness gradient along the length of the nanowires. Individual NWs show a number of peaks, corresponding to different QW thicknesses. Apart from the thinnest QWT, the integrated emission from the QWTs shows homogeneous emission intensity along the NW. The thinnest QWTs show patchy emission patterns due to the incomplete coverage of the QWT. We observe a few NWs with larger diameters. The QWTs in these NWs show spatially resolved variations across the NW. An increase in the local thickness of the QWT at the corners blocks the diffusion of carriers from facet to facet, thereby enabling us to visualise the thickness variations of the radial quantum wells.

Engineering III-V Semiconductor Nanowires for Device Applications

III-V semiconductor nanowires offer potential new device applications because of the unique properties associated with their 1D geometry and the ability to create quantum wells and other heterostructures with a radial and an axial geometry. Here, an overview of challenges in the bottom-up approaches for nanowire synthesis using catalyst and catalyst-free methods and the growth of axial and radial heterostructures is given. The work on nanowire devices such as lasers, light emitting nanowires, and solar cells and an overview of the top-down approaches for water splitting technologies is reviewed. The authors conclude with an analysis of the research field and the future research directions.