Direct Evidence for Charge Compensation-Induced Large Magnetoresistance in Thin WTe2

Quantifying the thickness of WTe2 using atomic-resolution STEM simulations and supervised machine learning

For two-dimensional (2D) materials, the exact thickness of the material often dictates its physical and chemical properties. The 2D quantum material WTe2 possesses properties that vary significantly from a single layer to multiple layers, yet it has a complicated crystal structure that makes it difficult to differentiate thicknesses in atomic-resolution images. Furthermore, its air sensitivity and susceptibility to electron beam-induced damage heighten the need for direct ways to determine the thickness and atomic structure without acquiring multiple measurements or transferring samples in ambient atmosphere. Here, we demonstrate a new method to identify the thickness up to ten van der Waals layers in Td-WTe2 using atomic-resolution high-angle annular dark-field scanning transmission electron microscopy image simulation. Our approach is based on analyzing the intensity line profiles of overlapping atomic columns and building a standard neural network model from the line profile features. We observe that it is possible to clearly distinguish between even and odd thicknesses (up to seven layers), without using machine learning, by comparing the deconvoluted peak intensity ratios or the area ratios. The standard neural network model trained on the line profile features allows thicknesses to be distinguished up to ten layers and exhibits an accuracy of up to 94% in the presence of Gaussian and Poisson noise. This method efficiently quantifies thicknesses in Td-WTe2, can be extended to related 2D materials, and provides a pathway to characterize precise atomic structures, including local thickness variations and atomic defects, for few-layer 2D materials with overlapping atomic column positions.

Direct Growth of Low Thermal Conductivity WTe2 Nanocrystalline Films on W Films

WTe2 has attracted much attention because of its layered structure and special electronic energy band structure. However, due to the difficulty of evaporating the W element itself and the inactivity of the Te element, the obtained large-area WTe2 thin films are usually accompanied by many defects. In this paper, WTe2 nanocrystalline films were successfully prepared on quartz substrates using magnetron sputtering and chemical vapor deposition techniques. Various analytical techniques such as X-ray Diffraction, Raman spectra, X-ray Photoelectron Spectroscopy, Scanning Electron Microscope, and photoluminescence spectra are employed to analyze the crystal structure, composition, and morphology. The effects of different tellurization temperatures and tellurization times on the properties of WTe2 thin films were investigated. WTe2 nanocrystalline films with good crystallinity were obtained at 600 °C for 30 min. The thermal conductivity of the WTe2 films prepared under this condition was 1.173 Wm-1K-1 at 300 K, which is significantly higher than that of samples prepared using other methods.

High-Mobility Topological Semimetals as Novel Materials for Huge Magnetoresistance Effect and New Type of Quantum Hall Effect

The quantitative description of electrical and magnetotransport properties of solid-state materials has been a remarkable challenge in materials science over recent decades. Recently, the discovery of a novel class of materials-the topological semimetals-has led to a growing interest in the full understanding of their magnetotransport properties. In this review, the strong interplay among topology, band structure, and carrier mobility in recently discovered high carrier mobility topological semimetals is discussed and their effect on their magnetotransport properties is outlined. Their large magnetoresistance effect, especially in the Hall transverse configuration, and a new version of a three-dimensional quantum Hall effect observed in high-mobility Weyl and Dirac semimetals are reviewed. The possibility of designing novel quantum sensors and devices based on solid-state semimetals is also examined.

Understanding palladium-tellurium cluster formation on WTe2: From a kinetically hindered distribution to thermodynamically controlled monodispersity

A fundamental understanding of the transition metal dichalcogenide (TMDC)-metal interface is critical for their utilization in a broad range of applications. We investigate how the deposition of palladium (Pd), as a model metal, on WTe₂(001), leads to the assembly of Pd into clusters and nanoparticles. Using X-ray photoemission spectroscopy, scanning tunneling microscopy imaging, and ab initio simulations, we find that Pd nucleation is driven by the interaction with and the availability of mobile excess tellurium (Te) leading to the formation of Pd-Te clusters at room temperature. Surprisingly, the nucleation of Pd-Te clusters is not affected by intrinsic surface defects, even at elevated temperatures. Upon annealing, the Pd-Te nanoclusters adopt an identical nanostructure and are stable up to ∼523 K. Density functional theory calculations provide a foundation for our understanding of the mobility of Pd and Te atoms, preferential nucleation of Pd-Te clusters, and the origin of their annealing-induced monodispersity. These results highlight the role the excess chalcogenide atoms may play in the metal deposition process. More broadly, the discoveries of synthetic pathways yielding thermally robust monodispersed nanostructures on TMDCs are critical to the manufacturing of novel quantum and microelectronics devices and catalytically active nano-alloy centers.

Pseudo-Hydrodynamic Flow of Quasiparticles in Semimetal WTe2 at Room Temperature

Recently, much interest has emerged in fluid-like electric charge transport in various solid-state systems. The hydrodynamic behavior of the electronic fluid reveals itself as a decrease of the electrical resistance with increasing temperature (the Gurzhi effect) in narrow channels, polynomial scaling of the resistance as a function of the channel width, violation of the Wiedemann-Franz law supported by the emergence of the Poiseuille flow. Similar to whirlpools in flowing water, the viscous electronic flow generates vortices, resulting in abnormal sign-changing electrical response driven by backflow. However, the question of whether the long-ranged sign-changing electrical response can be produced by a mechanism other than hydrodynamics has not been addressed so far. Here polarization-sensitive laser microscopy is used to demonstrate the emergence of visually similar abnormal sign-alternating patterns in semi-metallic tungsten ditelluride at room temperature where this material does not exhibit true hydrodynamics. It is found that the neutral quasiparticle current consisting of electrons and holes obeys an equation remarkably similar to the Navier-Stokes equation. In particular, the momentum relaxation is replaced by the much slower process of quasiparticle recombination. This pseudo-hydrodynamic flow of quasiparticles leads to a sign-changing charge accumulation pattern via different diffusivities of electrons and holes.

Synthesis of Two-Dimensional MoO2 Nanoplates with Large Linear Magnetoresistance and Nonlinear Hall Effect

Two-dimensional (2D) materials with large linear magnetoresistance (LMR) are very interesting owing to their potential application in magnetic storage or sensor devices. Here, we report the synthesis of 2D MoO₂ nanoplates grown by a chemical vapor deposition (CVD) method and observe large LMR and nonlinear Hall behavior in MoO₂ nanoplates. As-obtained MoO₂ nanoplates exhibit rhombic shapes and high crystallinity. Electrical studies indicate that MoO₂ nanoplates feature a metallic nature with an excellent conductivity of up to 3.7 × 10⁷ S m^-1 at 2.5 K. MoO₂ nanoplates display a large LMR of up to 455% at 3 K and -9 T. A thickness-dependent LMR analysis suggests that LMR values increase upon increasing the thickness of nanoplates. Besides, nonlinearity has been found in the magnetic-field-dependent Hall resistance, which decreases with increasing temperatures. Our studies highlight that MoO₂ nanoplates are promising materials for fundamental studies and potential applications in magnetic storage devices.

Two-Dimensional Van Der Waals Topological Materials: Preparation, Properties, and Device Applications

Over the past decade, 2D van der Waals (vdW) topological materials (TMs), including topological insulators and topological semimetals, which combine atomically flat 2D layers and topologically nontrivial band structures, have attracted increasing attention in condensed-matter physics and materials science. These easily cleavable and integrated TMs provide the ideal platform for exploring topological physics in the 2D limit, where new physical phenomena may emerge, and represent a potential to control and investigate exotic properties and device applications in nanoscale topological phases. However, multifaced efforts are still necessary, which is the prerequisite for the practical application of 2D vdW TMs. Herein, this review focuses on the preparation, properties, and device applications of 2D vdW TMs. First, three common preparation strategies for 2D vdW TMs are summarized, including single crystal exfoliation, chemical vapor deposition, and molecular beam epitaxy. Second, the origin and regulation of various properties of 2D vdW TMs are introduced, involving electronic properties, transport properties, optoelectronic properties, thermoelectricity, ferroelectricity, and magnetism. Third, some device applications of 2D vdW TMs are presented, including field-effect transistors, memories, spintronic devices, and photodetectors. Finally, some significant challenges and opportunities for the practical application of 2D vdW TMs in 2D topological electronics are briefly addressed.

Large Transverse and Longitudinal Magneto-Thermoelectric Effect in Polycrystalline Nodal-Line Semimetal Mg3 Bi2

Topological semimetals provide new opportunities for exploring novel thermoelectric phenomena, owing to their exotic and nontrivial electronic structure topology around the Fermi surface. Herein, the discovery of large transverse and longitudinal magneto-thermoelectric (MTE) effects in Mg₃ Bi₂ is reported and predicted to be a type-II nodal-line semimetal in the absence of spin-orbit coupling (SOC). The maximum transverse power factor is 2182 μW m^-1 K^-2 at 13.5 K and 6 Tesla. The longitudinal power factor reaches up to 3043 μW m^-1 K^-2 , which is 20 times higher than that in a zero-strength magnetic field and is also comparable to state-of-the-art MTE materials. By compensating the Mg loss in Mg-rich conditions for tuning the carrier concentration close to intrinsic state, the sample fabricated in this study exhibits a large linear non-saturating magnetoresistance of 940% under a field of 14 Tesla. Using density functional calculations, the authors attribute the underlying mechanism to the parent linear-dispersed nodal-line electronic structure without SOC and the anisotropic Fermi surface shape with SOC, highlighting the essential role of high carrier mobility and open electron orbits in the moment space. This work offers a new avenue toward highly efficient MTE materials through defect engineering in polycrystalline topological semimetals.

Weak antilocalization, spin–orbit interaction, and phase coherence length of a Dirac semimetal Bi0.97Sb0.03

The present study develops a general framework for weak antilocalization (WAL) in a three-dimensional (3D) system, which can be applied for a consistent description of longitudinal resistivity \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\rho_{xx} \left( B \right)$$\end{document}ρxxB and Hall resistivity \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\rho_{xy} \left( B \right)$$\end{document}ρxyB over a wide temperature (T) range. Compared to the previous approach Vu et al. (Phys Rev B 100:125162, 2019), which assumes infinite phase coherence length (l_ϕ) and a zero spin–orbit scattering length (l_SO), the present framework is more general, covering high T and the intermediate spin–orbit coupling strength. Based on the new approach, the \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\rho_{xx} \left( B \right)$$\end{document}ρxxB and \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\rho_{xy} \left( B \right)$$\end{document}ρxyB of the Dirac semimetal Bi_0.97Sb_0.03 was analyzed over a wide T range from 1.7 to 300 K. The present framework not only explains the main features of the experimental data but also enables one to estimate l_ϕ and l_SO at different temperatures. The l_ϕ has a power-law T dependence at high T and saturates at low T. In contrast, the l_SO shows negligible T dependence. Because of the different T dependence, a crossover occurs from the l_SO-dominant low-T to the l_ϕ-dominant high-T regions. Accordingly, the hallmark features of weak antilocalization (WAL) in \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\rho_{xx} \left( B \right)$$\end{document}ρxxB and \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\rho_{xy} \left( B \right)$$\end{document}ρxyB are gradually suppressed across the crossover with increasing T. The present theory describes both low-T and high-T regions successfully, which is impossible in the previous approximate approach. This work offers insights for understanding quantum electrical transport phenomena and their underlying physics, particularly when multiple WAL length scales are competing.

Materials and possible mechanisms of extremely large magnetoresistance: a review

Magnetoresistance (MR) is a characteristic that the resistance of a substance changes with the external magnetic field, reflecting various physical origins and microstructures of the substance. A large MR, namely a huge response to a low external field, has always been a useful functional feature in industrial technology and a core goal pursued by physicists and materials scientists. Conventional large MR materials are mainly manganites, whose colossal MR (CMR) can be as high as -90%. The dominant mechanism is attributed to spin configuration aligned by the external field, which reduces magnetic scattering and thus resistance. In recent years, some new systems have shown an extremely large unsaturated MR (XMR). Unlike ordinary metals, the positive MR of these systems can reach 10³%-10⁸% and is persistent under super high magnetic fields. The XMR materials are mainly metals or semimetals, distributed in high-mobility topological or non-topological systems, and some are magnetic, which suggests a wide range of application scenarios. Various mechanisms have been proposed for the potential physical origin of XMR, including electron-hole compensation, steep band, ultrahigh mobility, high residual resistance ratio, topological fermions, etc. It turns out that some mechanisms play a leading role in certain systems, while more are far from clearly defined. In addition, the researches on XMR are largely overlapped or closely correlated with other recently rising physics and materials researches, such as topological matters and two-dimensional (2D) materials, which makes elucidating the mechanism of XMR even more important. Moreover, the disclosed novel properties will lay a broad and solid foundation for the design and development of functional devices. In this review, we will discuss several aspects in the following order: (I) introduction, (II) XMR materials and classification, (III) proposed mechanisms for XMR, (IV) correlation with other systems (featured), and (V) conclusions and outlook.

Nontrivial Giant Linear Magnetoresistance in Nodal-Line Semimetal ZrGeSe 2D Layers

Linear magnetoresistance (LMR) is usually observed in topological quantum materials and plausibly connected with the topologically nontrivial surface state with Dirac-cone-like linear dispersion because the frequently encountered large Hall resistivity can be trivially mixed into the LMR via charge inhomogeneity. Herein, by applying an optimal gate voltage to nodal-line semimetal ZrGeSe two-dimensional (2D) layers with specific thicknesses, we observe a giant nonsaturated LMR of 8 × 10⁴% at 2 K and a magnetic field of 9 T. This giant LMR is accompanied by a very small Hall resistivity, which is inconsistent with the charge inhomogeneity mechanism. Our systematic results confirm that the giant LMR is maximized when the topological semimetal is in the "even-metal" regime and suppressed upon evolution to the normal "odd-metal" regime. The "even-to-odd" transition is universal regardless of the thicknesses of the crystals. A comparison with Abrikosov's quantum LMR theory indicates that the observed LMR cannot be trivial.

Positive Magnetoresistance and Chiral Anomaly in Exfoliated Type-II Weyl Semimetal Td-WTe2

Layered van der Waals semimetallic Td-WTe2, exhibiting intriguing properties which include non-saturating extreme positive magnetoresistance (MR) and tunable chiral anomaly, has emerged as a model topological type-II Weyl semimetal system. Here, ∼45 nm thick mechanically exfoliated flakes of Td-WTe2 are studied via atomic force microscopy, Raman spectroscopy, low-T/high-μ0H magnetotransport measurements and optical reflectivity. The contribution of anisotropy of the Fermi liquid state to the origin of the large positive transverse MR⊥ and the signature of chiral anomaly of the type-II Weyl Fermions are reported. The samples are found to be stable in air and no oxidation or degradation of the electronic properties is observed. A transverse MR⊥∼1200 % and an average carrier mobility of 5000 cm2V-1s-1 at T=5K for an applied perpendicular field μ0H⊥=7T are established. The system follows a Fermi liquid model for T≤50K and the anisotropy of the Fermi surface is concluded to be at the origin of the observed positive MR. Optical reflectivity measurements confirm the anisotropy of the electronic behaviour. The relative orientation of the crystal axes and of the applied electric and magnetic fields is proven to determine the observed chiral anomaly in the in-plane magnetotransport. The observed chiral anomaly in the WTe2 flakes is found to persist up to T=120K, a temperature at least four times higher than the ones reported to date.

Synthesis of Semiconducting 2H-Phase WTe2 Nanosheets with Large Positive Magnetoresistance

Tungsten ditelluride (WTe₂) is provoking immense interest because of its unique electronic properties, but studies about its semiconducting hexagonal (2H) phase are quite rare. Herein, we report the synthesis of semiconducting 2H WTe₂ nanosheets with large positive magnetoresistance, for the first time, by a simple lithium-intercalation-assisted exfoliation strategy. Systematic characterizations including high-resolution transmission electron microscopy, X-ray diffraction, and Raman and X-ray photoelectron spectroscopies provide clear evidence to distinguish the structure of 2H WTe₂ nanosheets from the orthorhombic (Td) phase bulk counterpart. The corresponding electronic phase transition from metal to semiconductor is also confirmed by density of states calculation, optical absorption, and electrical transport property measurements. Besides, the 2H WTe₂ nanosheets exhibit large positive magnetoresistance with values of up to 29.5% (10 K) and 16.2% (300 K) at 9 T. Overall, these findings open up a promising avenue into the exploration of WTe₂-based materials in the semiconductor field.

Anisotropic Picosecond Spin-Photocurrent from Weyl Semimetal WTe2

The generation and detection of ultrafast spin current, preferably reaching a frequency up to terahertz, is the core of spintronics. Studies have shown that the Weyl semimetal WTe₂ is of great potential in generating spin currents. However, the prior studies have been limited to the static measurements with the in-plane spin orientation. In this work, we demonstrate a picosecond spin-photocurrent in a Td-WTe₂ thin film via a terahertz time domain spectroscopy with a circularly polarized laser excitation. The anisotropic dependence of the circular photogalvanic effect (CPGE) in the terahertz emission reveals that the picosecond spin-photocurrent is generated along the rotational asymmetry a-axis. Notably, the generated spins are aligned along the out-of-plane direction under the light normally incident to the film surface, which provides an efficient means to manipulate magnetic devices with perpendicular magnetic anisotropy. A spin-splitting band induced by intrinsic inversion symmetry breaking enables the manipulation of a spin current by modulating the helicity of the laser excitation. Moreover, CPGE nearly vanishes at a transition temperature of ∼175 K due to the carrier compensation. Our work provides an insight into the dynamic behavior of the anisotropic spin-photocurrent of Td-WTe₂ in terahertz frequencies and shows a great potential for the future development of terahertz-spintronic devices with Weyl semimetals.

Tailored Tunnel Magnetoresistance Response in Three Ultrathin Chromium Trihalides

Materials that demonstrate large magnetoresistance have attracted significant interest for many decades. Extremely large tunnel magnetoresistance (TMR) has been reported by several groups across ultrathin CrI₃ by exploiting the weak antiferromagnetic coupling between adjacent layers. Here, we report a comparative study of TMR in all three chromium trihalides (CrX₃, X = Cl, Br, or I) in the two-dimensional limit. As the materials exhibit different transition temperatures and interlayer magnetic ordering in the ground state, tunneling measurements allow for an easy determination of the field-temperature phase diagram for the three systems. By changing sample thickness and biasing conditions, we then demonstrate how to maximize and further tailor the TMR response at different temperatures for each material. In particular, near the magnetic transition temperature, TMR is nonsaturating up to the highest fields measured for all three compounds owing to the large, field-induced exchange coupling.