Electrical Charge State Manipulation of Single Silicon Vacancies in a Silicon Carbide Quantum Optoelectronic Device

Electrical manipulation of telecom color centers in silicon

Silicon color centers have recently emerged as promising candidates for commercial quantum technology, yet their interaction with electric fields has yet to be investigated. In this paper, we demonstrate electrical manipulation of telecom silicon color centers by implementing novel lateral electrical diodes with an integrated G center ensemble in a commercial silicon on insulator wafer. The ensemble optical response is characterized under application of a reverse-biased DC electric field, observing both 100% modulation of fluorescence signal, and wavelength redshift of approximately 1.24 ± 0.08 GHz/V above a threshold voltage. Finally, we use G center fluorescence to directly image the electric field distribution within the devices, obtaining insight into the spatial and voltage-dependent variation of the junction depletion region and the associated mediating effects on the ensemble. Strong correlation between emitter-field coupling and generated photocurrent is observed. Our demonstration enables electrical control and stabilization of semiconductor quantum emitters.

Quantum systems in silicon carbide for sensing applications

This paper summarizes recent studies identifying key qubit systems in silicon carbide (SiC) for quantum sensing of magnetic, electric fields, and temperature at the nano and microscale. The properties of colour centres in SiC, that can be used for quantum sensing, are reviewed with a focus on paramagnetic colour centres and their spin Hamiltonians describing Zeeman splitting, Stark effect, and hyperfine interactions. These properties are then mapped onto various methods for their initialization, control, and read-out. We then summarised methods used for a spin and charge state control in various colour centres in SiC. These properties and methods are then described in the context of quantum sensing applications in magnetometry, thermometry, and electrometry. Current state-of-the art sensitivities are compiled and approaches to enhance the sensitivity are proposed. The large variety of methods for control and read-out, combined with the ability to scale this material in integrated photonics chips operating in harsh environments, places SiC at the forefront of future quantum sensing technology based on semiconductors.

Facile and stable fabrication of wafer-scale, ultra-black c-silicon with 3D nano/micro hybrid structures for solar cells

Three-dimensional (3D) silicon (Si) nanostructures have attracted much attention in solar cells due to their excellent broadband and omnidirectional light-harvesting properties. However, the development of 3D Si nanostructures is still plagued by the trade-off between structural complexity and fabrication difficulty. Herein, we proposed a facile and stable approach toward the fabrication of wafer-scale, ultra-black crystalline silicon (c-Si) with nano/micro hybrid structures. The distinguishing advantage of this approach is that it allows the formation of 3D Si nano/micro hybrid structures in a single-round process, avoiding the need for multiple iterations of lithography, coating, and etching required in conventional processes. The nano/micro hybrid structure arrays we fabricated show a low reflectance of <1% in the 600-1000 nm wavelength range and absorb 98.82% of incident light in the visible and near-infrared regions from 400 to 1100 nm under AM 1.5 G illumination. Solar cells made from nano/micro hybrid 3D structure arrays have an efficiency improvement of about 11.4% compared to those made from mono-micropillar arrays, and they have potential applications in high-performance photovoltaic devices.

Electrical control of quantum emitters in a Van der Waals heterostructure

Controlling and manipulating individual quantum systems in solids underpins the growing interest in the development of scalable quantum technologies. Recently, hexagonal boron nitride (hBN) has garnered significant attention in quantum photonic applications due to its ability to host optically stable quantum emitters. However, the large bandgap of hBN and the lack of efficient doping inhibits electrical triggering and limits opportunities to study the electrical control of emitters. Here, we show an approach to electrically modulate quantum emitters in an hBN-graphene van der Waals heterostructure. We show that quantum emitters in hBN can be reversibly activated and modulated by applying a bias across the device. Notably, a significant number of quantum emitters are intrinsically dark and become optically active at non-zero voltages. To explain the results, we provide a heuristic electrostatic model of this unique behavior. Finally, employing these devices we demonstrate a nearly-coherent source with linewidths of ~160 MHz. Our results enhance the potential of hBN for tunable solid-state quantum emitters for the growing field of quantum information science.

Imaging dark charge emitters in diamond via carrier-to-photon conversion

The application of color centers in wide-bandgap semiconductors to nanoscale sensing and quantum information processing largely rests on our knowledge of the surrounding crystalline lattice, often obscured by the countless classes of point defects the material can host. Here, we monitor the fluorescence from a negatively charged nitrogen-vacancy (NV⁻) center in diamond as we illuminate its vicinity. Cyclic charge state conversion of neighboring point defects sensitive to the excitation beam leads to a position-dependent stream of photo-generated carriers whose capture by the probe NV⁻ leads to a fluorescence change. This “charge-to-photon” conversion scheme allows us to image other individual point defects surrounding the probe NV, including nonfluorescent “single-charge emitters” that would otherwise remain unnoticed. Given the ubiquity of color center photochromism, this strategy may likely find extensions to material systems other than diamond.

Robust coherent control of solid-state spin qubits using anti-Stokes excitation

Optically addressable solid-state color center spin qubits have become important platforms for quantum information processing, quantum networks and quantum sensing. The readout of color center spin states with optically detected magnetic resonance (ODMR) technology is traditionally based on Stokes excitation, where the energy of the exciting laser is higher than that of the emission photons. Here, we investigate an unconventional approach using anti-Stokes excitation to detect the ODMR signal of silicon vacancy defect spin in silicon carbide, where the exciting laser has lower energy than the emitted photons. Laser power, microwave power and temperature dependence of the anti-Stokes excited ODMR are systematically studied, in which the behavior of ODMR contrast and linewidth is shown to be similar to that of Stokes excitation. However, the ODMR contrast is several times that of the Stokes excitation. Coherent control of silicon vacancy spin under anti-Stokes excitation is then realized at room temperature. The spin coherence properties are the same as those of Stokes excitation, but with a signal contrast that is around three times greater. To illustrate the enhanced spin readout contrast under anti-Stokes excitation, we also provide a theoretical model. The experiments demonstrate that the current anti-Stokes excitation ODMR approach has promising applications in quantum information processing and quantum sensing.

Optically detected magnetic resonance of defect spins typically relies on Stokes excitation, in which the excitation energy is larger than that of the emitted photon. Here, the authors use the opposite regime of anti-Stokes excitation to detect Si vacancy spins in SiC, with a threefold improvement in signal contrast.

Enhanced cavity coupling to silicon vacancies in 4H silicon carbide using laser irradiation and thermal annealing

The negatively charged silicon monovacancy [Formula: see text] in 4H silicon carbide (SiC) is a spin-active point defect that has the potential to act as a qubit in solid-state quantum information applications. Photonic crystal cavities (PCCs) can augment the optical emission of the [Formula: see text], yet fine-tuning the defect-cavity interaction remains challenging. We report on two postfabrication processes that result in enhancement of the [Formula: see text] optical emission from our PCCs, an indication of improved coupling between the cavity and ensemble of silicon vacancies. Below-bandgap irradiation at 785-nm and 532-nm wavelengths carried out at times ranging from a few minutes to several hours results in stable enhancement of emission, believed to result from changing the relative ratio of [Formula: see text] ("dark state") to [Formula: see text] ("bright state"). The much faster change effected by 532-nm irradiation may result from cooperative charge-state conversion due to proximal defects. Thermal annealing at 100 °C, carried out over 20 min, also results in emission enhancements and may be explained by the relatively low-activation energy diffusion of carbon interstitials [Formula: see text], subsequently recombining with other defects to create additional [Formula: see text]s. These PCC-enabled experiments reveal insights into defect modifications and interactions within a controlled, designated volume and indicate pathways to improved defect-cavity interactions.

Single-Photon Sources Based on Novel Color Centers in Silicon Carbide P-I-N Diodes: Combining Theory and Experiment

HIGHLIGHTS

Theory of electrically driven single-photon sources based on color centers in silicon carbide p–i–n diodes. New method of determining the electron and hole capture cross sections by an optically active point defect (color center) from the experimental measurements of the single-photon electroluminescence rate and second-order coherence. The developed method is based on the measurements at the single defect level. Therefore, in contrast to other approaches, one point defect is sufficient to measure its electron and hole capture cross sections.

ABSTRACT

Point defects in the crystal lattice of SiC, known as color centers, have recently emerged as one of the most promising single-photon emitters for non-classical light sources. However, the search for the best color center that satisfies all the requirements of practical applications has only just begun. Many color centers in SiC have been recently discovered but not yet identified. Therefore, it is extremely challenging to understand their optoelectronic properties and evaluate their potential for use in practical single-photon sources. Here, we present a theoretical approach that explains the experiments on single-photon electroluminescence (SPEL) of novel color centers in SiC p–i–n diodes and gives the possibility to engineer highly efficient single-photon emitting diodes based on them. Moreover, we develop a novel method of determining the electron and hole capture cross sections by the color center from experimental measurements of the SPEL rate and second-order coherence. Unlike other methods, the developed approach uses the experimental results at the single defect level that can be easily obtained as soon as a single-color center is identified in the i-type region of the SiC p–i–n diode.

GRAPHIC ABSTRACT

[Image: see text]

Probing Metastable Space-Charge Potentials in a Wide Band Gap Semiconductor

While the study of space-charge potentials has a long history, present models are largely based on the notion of steady state equilibrium, ill-suited to describe wide band gap semiconductors with moderate to low concentrations of defects. Here we build on color centers in diamond both to locally inject carriers into the crystal and probe their evolution as they propagate in the presence of external and internal potentials. We witness the formation of metastable charge patterns whose shape-and concomitant field-can be engineered through the timing of carrier injection and applied voltages. With the help of previously crafted charge patterns, we unveil a rich interplay between local and extended sources of space-charge field, which we then exploit to show space-charge-induced carrier guiding.

Electrical control of single-photon emission in highly charged individual colloidal quantum dots

Electron transfer to an individual quantum dot promotes the formation of charged excitons with enhanced recombination pathways and reduced lifetimes. Excitons with only one or two extra charges have been observed and exploited for very efficient lasing or single-quantum dot light-emitting diodes. Here, by room-temperature time-resolved experiments on individual giant-shell CdSe/CdS quantum dots, we show the electrochemical formation of highly charged excitons containing more than 12 electrons and 1 hole. We report the control over intensity blinking, along with a deterministic manipulation of quantum dot photodynamics, with an observed 210-fold increase in the decay rate, accompanied by 12-fold decrease in the emission intensity, while preserving single-photon emission characteristics. These results pave the way for deterministic control over the charge state, and room-temperature decay rate engineering for colloidal quantum dot-based classical and quantum communication technologies.

Optical Gating of Photoluminescence from Color Centers in Hexagonal Boron Nitride

We report on multicolor excitation experiments with color centers in hexagonal boron nitride at cryogenic temperatures. We demonstrate controllable optical switching between bright and dark states of color centers emitting around 2 eV. Resonant, or quasi-resonant, excitation of photoluminescence also pumps the color center, via a two-photon process, into a dark state, where it becomes trapped. Repumping back into the bright state has a step-like spectrum with a defect-dependent threshold between 2.25 and 2.6 eV. This behavior is consistent with photoionization and charging between optically bright and dark states of the defect. Furthermore, a second zero phonon line, detuned by +0.4 eV, is observed in absorption with orthogonal polarization to the emission, evidencing an additional energy level in the color center.

Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide

Quantum systems combining indistinguishable photon generation and spin-based quantum information processing are essential for remote quantum applications and networking. However, identification of suitable systems in scalable platforms remains a challenge. Here, we investigate the silicon vacancy centre in silicon carbide and demonstrate controlled emission of indistinguishable and distinguishable photons via coherent spin manipulation. Using strong off-resonant excitation and collecting zero-phonon line photons, we show a two-photon interference contrast close to 90% in Hong-Ou-Mandel type experiments. Further, we exploit the system’s intimate spin-photon relation to spin-control the colour and indistinguishability of consecutively emitted photons. Our results provide a deep insight into the system’s spin-phonon-photon physics and underline the potential of the industrially compatible silicon carbide platform for measurement-based entanglement distribution and photonic cluster state generation. Additional coupling to quantum registers based on individual nuclear spins would further allow for high-level network-relevant quantum information processing, such as error correction and entanglement purification.

Defects in silicon carbide can act as single photon sources that also have the benefit of a host material that is already used in electronic devices. Here the authors demonstrate that they can control the distinguishability of the emitted photons by changing the defect spin state.

Hybrid Electro-Optical Pumping of Active Plasmonic Nanostructures

Surface plasmon polaritons (SPPs) offer a unique opportunity to overcome the diffraction limit of light. However, this opportunity comes at the cost of the strong absorption of the SPP field in a metal, which unavoidably limits the SPP propagation length to a few tens of micrometers in nanostructures with deep-subwavelength mode confinement. The only possibility to avoid the propagation losses is to compensate for them by optical gain in the adjacent active medium. Different approaches for surface plasmon amplification by stimulated emission of radiation have been proposed based on either optical or electrical pumping. However, each has its own disadvantages caused by the selected type of pumping scheme. Here, we study, for the first time, hybrid electro-optical pumping of active plasmonic waveguide structures, and by using comprehensive self-consistent numerical simulations, demonstrate that this hybrid approach can outperform both pure electrical pumping and pure optical pumping. The SPP modal gain is higher than under pure optical pumping, while one can precisely and locally adjust it by tuning the electric current, which allows the reduction of amplification noise and provides additional functionalities. We believe that our findings lay a solid foundation for the development of a new generation of active plasmonic devices and stimulate further research in this area.

First-principles calculations of Stark shifts of electronic transitions for defects in semiconductors: the Si vacancy in 4H-SiC

Point defects in solids are promising single-photon sources with application in quantum sensing, computing and communication. Herein, we describe a theoretical framework for studying electric field effects on defect-related electronic transitions, based on density functional theory calculations with periodic boundary conditions. Sawtooth-shaped electric fields are applied perpendicular to the surface of a two-dimensional defective slab, with induced charge singularities being placed in the vacuum layer. The silicon vacancy (V _Si) in 4H-SiC is employed as a benchmark system, having three zero-phonon lines in the near-infrared (V1, V1' and V2) and exhibiting Stark tunability via fabrication of Schottky barrier or p-i-n diodes. In agreement with experimental observations, we find an approximately linear field response for the zero-phonon transitions of V _Si involving the decay from the first excited state (named V1 and V2). However, the magnitude of the Stark shifts are overestimated by nearly a factor of 10 when comparing to experimental findings. We discuss several theoretical and experimental aspects which could affect the agreement.

Electrical and optical control of single spins integrated in scalable semiconductor devices

Spin defects in silicon carbide have the advantage of exceptional electron spin coherence combined with a near-infrared spin-photon interface, all in a material amenable to modern semiconductor fabrication. Leveraging these advantages, we integrated highly coherent single neutral divacancy spins in commercially available p-i-n structures and fabricated diodes to modulate the local electrical environment of the defects. These devices enable deterministic charge-state control and broad Stark-shift tuning exceeding 850 gigahertz. We show that charge depletion results in a narrowing of the optical linewidths by more than 50-fold, approaching the lifetime limit. These results demonstrate a method for mitigating the ubiquitous problem of spectral diffusion in solid-state emitters by engineering the electrical environment while using classical semiconductor devices to control scalable, spin-based quantum systems.