Ionic Liquid Gating Induced Protonation of Electron-Doped Cuprate Superconductors

Is Ba3In2O6a high-Tcsuperconductor?

It has been suggested that Ba3In2O6might be a high-Tcsuperconductor. Experimental investigation of the properties of Ba3In2O6was long inhibited by its instability in air. Recently epitaxial Ba3In2O6with a protective capping layer was demonstrated, which finally allows its electronic characterization. The optical bandgap of Ba3In2O6is determined to be 2.99 eV in-the (001) plane and 2.83 eV along thec-axis direction by spectroscopic ellipsometry. First-principles calculations were carried out, yielding a result in good agreement with the experimental value. Various dopants were explored to induce (super-)conductivity in this otherwise insulating material. NeitherA- norB-site doping proved successful. The underlying reason is predominately the formation of oxygen interstitials as revealed by scanning transmission electron microscopy and first-principles calculations. Additional efforts to induce superconductivity were investigated, including surface alkali doping, optical pumping, and hydrogen reduction. To probe liquid-ion gating, Ba3In2O6was successfully grown epitaxially on an epitaxial SrRuO3bottom electrode. So far none of these efforts induced superconductivity in Ba3In2O6,leaving the answer to the initial question of whether Ba3In2O6is a high-Tcsuperconductor to be 'no' thus far.

Protonation-Induced Colossal Lattice Expansion in La2/3Sr1/3MnO3

Ion injection controlled by an electric field is a powerful method to manipulate the diverse physical and chemical properties of metal oxides. However, the dynamic control of ion concentrations and their correlations with lattices in perovskite systems have not been fully understood. In this study, we systematically demonstrate the electric-field-controlled protonation of La2/3Sr1/3MnO3 (LSMO) films. The rapid and room-temperature protonation induces a colossal lattice expansion of 9.35% in tensile-strained LSMO, which is crucial for tailoring material properties and enabling a wide range of applications in advanced electronics, energy storage, and sensing technologies. This large expansion in the lattice is attributed to the higher degree of proton diffusion, resulting in a significant elongation in the Mn-O bond and octahedral tilting, which is supported by results from density functional theory calculations. Interestingly, such a colossal expansion is not observed in LSMO under compressive strain, indicating the close dependence of ion-electron-lattice coupling on strain states. These efficient modulations of the lattice and magnetoelectric functionalities of LSMO via proton diffusion offer a promising avenue for developing multifunctional iontronic devices.

Electric-field control of reversible electronic and magnetic transitions in two-dimensional oxide monolayer magnets

Atomically thin oxide magnetic materials are highly desirable due to the promising potential to integrate two-dimensional (2D) magnets into next-generation spintronics. Therefore, 2D oxide magnetism is expected to be effectively tuned by the magnetic and electrical fields, holding prospective for future low-dissipation electronic devices. However, the electric-field control of 2D oxide monolayer magnetism has rarely been reported. Here, we present the realization of 2D monolayer magnetism in oxide (SrRuO3)1/(SrTiO3)N (N = 1, 3) superlattices that shows an efficient and reversible phase transition through electric-field controlled proton (H+) evolution. By using ionic liquid gating to modulate the proton concentration in (SrRuO3)1/(SrTiO3)1 superlattice, an electric-field induced metal-insulator transition was observed, along with gradually suppressed magnetic ordering and modulated magnetic anisotropy. Theoretical analysis reveals that proton intercalation plays a crucial role in both electronic and magnetic phase transitions. Strikingly, SrTiO3 layers can act as a proton sieve, which have a significant influence on proton evolution. Our work stimulates the tuning functionality of 2D oxide monolayer magnetism by voltage control, providing potential for future energy-efficient electronics.

Modulations in Superconductors: Probes of Underlying Physics

The importance of modulations is elevated to an unprecedented level, due to the delicate conditions required to bring out exotic phenomena in quantum materials, such as topological materials, magnetic materials, and superconductors. Recently, state-of-the-art modulation techniques in material science, such as electric-double-layer transistor, piezoelectric-based strain apparatus, angle twisting, and nanofabrication, have been utilized in superconductors. They not only efficiently increase the tuning capability to the broader ranges but also extend the tuning dimensionality to unprecedented degrees of freedom, including quantum fluctuations of competing phases, electronic correlation, and phase coherence essential to global superconductivity. Here, for a comprehensive review, these techniques together with the established modulation methods, such as elemental substitution, annealing, and polarization-induced gating, are contextualized. Depending on the mechanism of each method, the modulations are categorized into stoichiometric manipulation, electrostatic gating, mechanical modulation, and geometrical design. Their recent advances are highlighted by applications in newly discovered superconductors, e.g., nickelates, Kagome metals, and magic-angle graphene. Overall, the review is to provide systematic modulations in emergent superconductors and serve as the coordinate for future investigations, which can stimulate researchers in superconductivity and other fields to perform various modulations toward a thorough understanding of quantum materials.

Nonvolatile n-Type Doping and Metallic State in Multilayer-MoS2 Induced by Hydrogenation Using Ionic-Liquid Gating

Manipulation of the carrier density of layered transition-metal dichalcogenides (TMDs) is of fundamental significance for a wide range of electronic and optoelectronic applications. Herein, we applied the ionic-liquid-gating (ILG) method to inject the smallest ions, H⁺, into layered MoS₂ to manipulate its carrier concentration. The measurements demonstrate that the injection of H⁺ realizes a nonvolatile n-type doping and metallic state in multilayer-MoS₂ with a concentration of injection electron of ∼1.08 × 10¹³ cm^-2 but has no effect on monolayer-MoS₂, which clearly reveals that the H⁺ is injected into the interlayer of MoS₂, not in the crystal lattice. The H⁺-injected multilayer-MoS₂ was then used as the contact electrodes of a monolayer-MoS₂ field effect transistor to improve the contact quality, and its performance has been enhanced. Our work deepens the understanding of the ILG technology and extends its application in TMDs.

Homogeneous Lateral Lithium Intercalation into Transition Metal Dichalcogenides via Ion Backgating

Lithium intercalation has become a versatile tool for realizing emergent quantum phenomena in two-dimensional (2D) materials. However, the insertion of lithium ions may be accompanied by the creation of wrinkles and cracks, which prevents the material from manifesting its intrinsic properties under substantial charge injection. By using the recently developed ion backgating technique, we successfully realize lateral intercalation in 1T-TiSe₂ and 2H-NbSe₂, which shows substantially improved sample homogeneity. The homogeneity at high lithium doping is not only demonstrated via low-temperature transport measurements but also directly visualized by topographical imaging through in situ atomic force microscopy (AFM). The application of lateral intercalation to a broad spectrum of 2D materials can greatly facilitate the search for exotic quantum phenomena.

Anomalous Metallic Phase in Molybdenum Disulphide Induced via Gate-Driven Organic Ion Intercalation

Transition metal dichalcogenides exhibit rich phase diagrams dominated by the interplay of superconductivity and charge density waves, which often result in anomalies in the electric transport properties. Here, we employ the ionic gating technique to realize a tunable, non-volatile organic ion intercalation in bulk single crystals of molybdenum disulphide (MoS2). We demonstrate that this gate-driven organic ion intercalation induces a strong electron doping in the system without changing the pristine 2H crystal symmetry and triggers the emergence of a re-entrant insulator-to-metal transition. We show that the gate-induced metallic state exhibits clear anomalies in the temperature dependence of the resistivity with a natural explanation as signatures of the development of a charge-density wave phase which was previously observed in alkali-intercalated MoS2. The relatively large temperature at which the anomalies are observed (∼150 K), combined with the absence of any sign of doping-induced superconductivity down to ∼3 K, suggests that the two phases might be competing with each other to determine the electronic ground state of electron-doped MoS2.

The 2021 room-temperature superconductivity roadmap

Designing materials with advanced functionalities is the main focus of contemporary solid-state physics and chemistry. Research efforts worldwide are funneled into a few high-end goals, one of the oldest, and most fascinating of which is the search for an ambient temperature superconductor (A-SC). The reason is clear: superconductivity at ambient conditions implies being able to handle, measure and access a single, coherent, macroscopic quantum mechanical state without the limitations associated with cryogenics and pressurization. This would not only open exciting avenues for fundamental research, but also pave the road for a wide range of technological applications, affecting strategic areas such as energy conservation and climate change. In this roadmap we have collected contributions from many of the main actors working on superconductivity, and asked them to share their personal viewpoint on the field. The hope is that this article will serve not only as an instantaneous picture of the status of research, but also as a true roadmap defining the main long-term theoretical and experimental challenges that lie ahead. Interestingly, although the current research in superconductor design is dominated by conventional (phonon-mediated) superconductors, there seems to be a widespread consensus that achieving A-SC may require different pairing mechanisms.In memoriam, to Neil Ashcroft, who inspired us all.

A selective control of volatile and non-volatile superconductivity in an insulating copper oxide via ionic liquid gating

Manipulating the superconducting states of high transition temperature (high-T_c) cuprate superconductors in an efficient and reliable way is of great importance for their applications in next-generation electronics. Here, employing ionic liquid gating, a selective control of volatile and non-volatile superconductivity is achieved in pristine insulating Pr₂CuO_4±δ (PCO) films, based on two distinct mechanisms. Firstly, with positive electric fields, the film can be reversibly switched between superconducting and non-superconducting states, attributed to the carrier doping effect. Secondly, the film becomes more resistive by applying negative bias voltage up to - 4 V, but strikingly, a non-volatile superconductivity is achieved once the gate voltage is removed. Such phenomenon represents a distinctive route of manipulating superconductivity in PCO, resulting from the doping healing of oxygen vacancies in copper-oxygen planes as unravelled by high-resolution scanning transmission electron microscope and in situ X-ray diffraction experiments. The effective manipulation of volatile/non-volatile superconductivity in the same parent cuprate brings more functionalities to superconducting electronics, as well as supplies flexible samples for investigating the nature of quantum phase transitions in high-T_c superconductors.