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Charaev I, Bandurin DA, Bollinger AT, Phinney IY, Drozdov I, Colangelo M, Butters BA, Taniguchi T, Watanabe K, He X, Medeiros O, Božović I, Jarillo-Herrero P, Berggren KK. Single-photon detection using high-temperature superconductors. Nat Nanotechnol 2023; 18:343-349. [PMID: 36941357 DOI: 10.1038/s41565-023-01325-2] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/11/2022] [Accepted: 01/10/2023] [Indexed: 06/18/2023]
Abstract
The detection of individual quanta of light is important for quantum communication, fluorescence lifetime imaging, remote sensing and more. Due to their high detection efficiency, exceptional signal-to-noise ratio and fast recovery times, superconducting-nanowire single-photon detectors (SNSPDs) have become a critical component in these applications. However, the operation of conventional SNSPDs requires costly cryocoolers. Here we report the fabrication of two types of high-temperature superconducting nanowires. We observe linear scaling of the photon count rate on the radiation power at the telecommunications wavelength of 1.5 μm and thereby reveal single-photon operation. SNSPDs made from thin flakes of Bi2Sr2CaCu2O8+δ exhibit a single-photon response up to 25 K, and for SNSPDs from La1.55Sr0.45CuO4/La2CuO4 bilayer films, this response is observed up to 8 K. While the underlying detection mechanism is not fully understood yet, our work expands the family of materials for SNSPD technology beyond the liquid helium temperature limit and suggests that even higher operation temperatures may be reached using other high-temperature superconductors.
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Affiliation(s)
- I Charaev
- Massachusetts Institute of Technology, Cambridge, MA, USA.
- University of Zurich, Zurich, Switzerland.
| | - D A Bandurin
- Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore.
| | | | - I Y Phinney
- Massachusetts Institute of Technology, Cambridge, MA, USA
| | - I Drozdov
- Brookhaven National Laboratory, Upton, NY, USA
| | - M Colangelo
- Massachusetts Institute of Technology, Cambridge, MA, USA
| | - B A Butters
- Massachusetts Institute of Technology, Cambridge, MA, USA
| | - T Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute of Material Science, Tsukuba, Japan
| | - K Watanabe
- Research Center for Functional Materials, National Institute of Material Science, Tsukuba, Japan
| | - X He
- Brookhaven National Laboratory, Upton, NY, USA
- Department of Chemistry, Yale University, New Haven, CT, USA
| | - O Medeiros
- Massachusetts Institute of Technology, Cambridge, MA, USA
| | - I Božović
- Brookhaven National Laboratory, Upton, NY, USA
- Department of Chemistry, Yale University, New Haven, CT, USA
| | | | - K K Berggren
- Massachusetts Institute of Technology, Cambridge, MA, USA.
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2
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Giraldo-Gallo P, Galvis JA, Stegen Z, Modic KA, Balakirev FF, Betts JB, Lian X, Moir C, Riggs SC, Wu J, Bollinger AT, He X, Božović I, Ramshaw BJ, McDonald RD, Boebinger GS, Shekhter A. Scale-invariant magnetoresistance in a cuprate superconductor. Science 2018; 361:479-481. [PMID: 30072535 DOI: 10.1126/science.aan3178] [Citation(s) in RCA: 77] [Impact Index Per Article: 12.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/27/2017] [Accepted: 05/31/2018] [Indexed: 11/02/2022]
Abstract
The anomalous metallic state in the high-temperature superconducting cuprates is masked by superconductivity near a quantum critical point. Applying high magnetic fields to suppress superconductivity has enabled detailed studies of the normal state, yet the direct effect of strong magnetic fields on the metallic state is poorly understood. We report the high-field magnetoresistance of thin-film La2-x Sr x CuO4 cuprate in the vicinity of the critical doping, 0.161 ≤ p ≤ 0.190. We find that the metallic state exposed by suppressing superconductivity is characterized by magnetoresistance that is linear in magnetic fields up to 80 tesla. The magnitude of the linear-in-field resistivity mirrors the magnitude and doping evolution of the well-known linear-in-temperature resistivity that has been associated with quantum criticality in high-temperature superconductors.
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Affiliation(s)
- P Giraldo-Gallo
- National High Magnetic Field Laboratory (NHMFL), Florida State University, Tallahassee, FL 32310, USA.,Department of Physics, Universidad de Los Andes, Bogotá 111711, Colombia
| | - J A Galvis
- National High Magnetic Field Laboratory (NHMFL), Florida State University, Tallahassee, FL 32310, USA.,Departamento de Ciencias Naturales, Facultad de Ingeniería y Ciencias Básicas, Universidad Central, Bogotá 110311, Colombia
| | - Z Stegen
- National High Magnetic Field Laboratory (NHMFL), Florida State University, Tallahassee, FL 32310, USA.,Department of Physics, Florida State University, Tallahassee, FL 32310, USA
| | - K A Modic
- Max Planck Institute for Chemical Physics of Solids, D-01187 Dresden, Germany
| | - F F Balakirev
- Los Alamos National Laboratory, Los Alamos, NM 87545, USA
| | - J B Betts
- Los Alamos National Laboratory, Los Alamos, NM 87545, USA
| | - X Lian
- National High Magnetic Field Laboratory (NHMFL), Florida State University, Tallahassee, FL 32310, USA.,Department of Physics, Florida State University, Tallahassee, FL 32310, USA
| | - C Moir
- National High Magnetic Field Laboratory (NHMFL), Florida State University, Tallahassee, FL 32310, USA.,Department of Physics, Florida State University, Tallahassee, FL 32310, USA
| | - S C Riggs
- National High Magnetic Field Laboratory (NHMFL), Florida State University, Tallahassee, FL 32310, USA
| | - J Wu
- Brookhaven National Laboratory (BNL), Upton, NY 11973, USA
| | - A T Bollinger
- Brookhaven National Laboratory (BNL), Upton, NY 11973, USA
| | - X He
- Brookhaven National Laboratory (BNL), Upton, NY 11973, USA.,Applied Physics Department, Yale University, New Haven, CT 06520, USA
| | - I Božović
- Brookhaven National Laboratory (BNL), Upton, NY 11973, USA.,Applied Physics Department, Yale University, New Haven, CT 06520, USA
| | - B J Ramshaw
- Los Alamos National Laboratory, Los Alamos, NM 87545, USA.,Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY 14853, USA
| | - R D McDonald
- Los Alamos National Laboratory, Los Alamos, NM 87545, USA
| | - G S Boebinger
- National High Magnetic Field Laboratory (NHMFL), Florida State University, Tallahassee, FL 32310, USA.,Department of Physics, Florida State University, Tallahassee, FL 32310, USA
| | - A Shekhter
- National High Magnetic Field Laboratory (NHMFL), Florida State University, Tallahassee, FL 32310, USA.
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Wu J, Bollinger AT, He X, Božović I. Spontaneous breaking of rotational symmetry in copper oxide superconductors. Nature 2017; 547:432-435. [DOI: 10.1038/nature23290] [Citation(s) in RCA: 90] [Impact Index Per Article: 12.9] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/09/2016] [Accepted: 06/08/2017] [Indexed: 11/09/2022]
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4
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Leng X, Bollinger AT, Božović I. Purely electronic mechanism of electrolyte gating of indium tin oxide thin films. Sci Rep 2016; 6:31239. [PMID: 27506371 PMCID: PMC4979031 DOI: 10.1038/srep31239] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/15/2016] [Accepted: 07/15/2016] [Indexed: 11/21/2022] Open
Abstract
Epitaxial indium tin oxide films have been grown on both LaAlO3 and yttria-stabilized zirconia substrates using RF magnetron sputtering. Electrolyte gating causes a large change in the film resistance that occurs immediately after the gate voltage is applied, and shows no hysteresis during the charging/discharging processes. When two devices are patterned next to one another and the first one gated through an electrolyte, the second one shows no changes in conductance, in contrast to what happens in materials (like tungsten oxide) susceptible to ionic electromigration and intercalation. These findings indicate that electrolyte gating in indium tin oxide triggers a pure electronic process (electron depletion or accumulation, depending on the polarity of the gate voltage), with no electrochemical reactions involved. Electron accumulation occurs in a very thin layer near the film surface, which becomes highly conductive. These results contribute to our understanding of the electrolyte gating mechanism in complex oxides and may be relevant for applications of electric double layer transistor devices.
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Affiliation(s)
- X Leng
- Brookhaven National Laboratory, Upton NY 11973, USA
| | | | - I Božović
- Brookhaven National Laboratory, Upton NY 11973, USA.,Applied Physics Department, Yale University, New Haven CT 06520, USA
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Wu J, Pelleg O, Logvenov G, Bollinger AT, Sun YJ, Boebinger GS, Vanević M, Radović Z, Božović I. Anomalous independence of interface superconductivity from carrier density. Nat Mater 2013; 12:877-881. [PMID: 23913171 DOI: 10.1038/nmat3719] [Citation(s) in RCA: 24] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/03/2012] [Accepted: 06/24/2013] [Indexed: 06/02/2023]
Abstract
The recent discovery of superconductivity at the interface of two non-superconducting materials has received much attention. In cuprate bilayers, the critical temperature (Tc) can be significantly enhanced compared with single-phase samples. Several explanations have been proposed, invoking Sr interdiffusion, accumulation and depletion of mobile charge carriers, elongation of the copper-to-apical-oxygen bond length, or a beneficial crosstalk between a material with a high pairing energy and another with a large phase stiffness. From each of these models, one would predict Tc to depend strongly on the carrier density in the constituent materials. Here, we study combinatorial libraries of La(2-x)Sr(x)CuO4-La2CuO4 bilayer samples--an unprecedentedly large set of more than 800 different compositions. The doping level x spans a wide range, 0.15 < x < 0.47, and the measured Hall coefficient varies by one order of magnitude. Nevertheless, across the entire sample set, Tc stays essentially constant at about 40 K. We infer that doping up to the optimum level does not shift the chemical potential, unlike in ordinary Fermi liquids. This result poses a new challenge to theory--cuprate superconductors have not run out of surprises.
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Affiliation(s)
- J Wu
- 1] Brookhaven National Laboratory, Upton, New York 11973-5000, USA [2] National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida 32310, USA
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Shi X, Logvenov G, Bollinger AT, Božović I, Panagopoulos C, Popović D. Emergence of superconductivity from the dynamically heterogeneous insulating state in La(2-x)Sr(x)CuO4. Nat Mater 2013; 12:47-51. [PMID: 23160270 DOI: 10.1038/nmat3487] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/30/2012] [Accepted: 10/09/2012] [Indexed: 06/01/2023]
Abstract
A central issue for copper oxides is the nature of the insulating ground state at low carrier densities and the emergence of high-temperature superconductivity from that state with doping. Even though this superconductor-insulator transition (SIT) is a zero-temperature transition, measurements are not usually carried out at low temperatures. Here we use magnetoresistance to probe both the insulating state at very low temperatures and the presence of superconducting fluctuations in La(2-x)Sr(x)CuO(4) films, for doping levels that range from the insulator to the superconductor (x = 0.03-0.08). We observe that the charge glass behaviour, characteristic of the insulating state, is suppressed with doping, but it coexists with superconducting fluctuations that emerge already on the insulating side of the SIT. The unexpected quenching of the superconducting fluctuations by the competing charge order at low temperatures provides a new perspective on the mechanism for the SIT.
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Affiliation(s)
- Xiaoyan Shi
- National High Magnetic Field Laboratory and Department of Physics, Florida State University, Tallahassee, Florida 32310, USA
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Pereiro J, Bollinger AT, Logvenov G, Gozar A, Panagopoulos C, Bozović I. Insights from the study of high-temperature interface superconductivity. Philos Trans A Math Phys Eng Sci 2012; 370:4890-4903. [PMID: 22987034 DOI: 10.1098/rsta.2012.0219] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/01/2023]
Abstract
A brief overview is given of the studies of high-temperature interface superconductivity based on atomic-layer-by-layer molecular beam epitaxy (ALL-MBE). A number of difficult materials science and physics questions have been tackled, frequently at the expense of some technical tour de force, and sometimes even by introducing new techniques. ALL-MBE is especially suitable to address questions related to surface and interface physics. Using this technique, it has been demonstrated that high-temperature superconductivity can occur in a single copper oxide layer-the thinnest superconductor known. It has been shown that interface superconductivity in cuprates is a genuine electronic effect-it arises from charge transfer (electron depletion and accumulation) across the interface driven by the difference in chemical potentials rather than from cation diffusion and mixing. We have also understood the nature of the superconductor-insulator phase transition as a function of doping. However, a few important questions, such as the mechanism of interfacial enhancement of the critical temperature, are still outstanding.
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Affiliation(s)
- J Pereiro
- Division of Physics and Applied Physics, Nanyang Technological University, Singapore, Republic of Singapore
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8
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Bollinger AT, Dubuis G, Yoon J, Pavuna D, Misewich J, Božović I. Superconductor–insulator transition in La2 − xSr x CuO4 at the pair quantum resistance. Nature 2011; 472:458-60. [DOI: 10.1038/nature09998] [Citation(s) in RCA: 393] [Impact Index Per Article: 30.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/10/2010] [Accepted: 03/11/2011] [Indexed: 11/09/2022]
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Bollinger AT, Dinsmore RC, Rogachev A, Bezryadin A. Determination of the superconductor-insulator phase diagram for one-dimensional wires. Phys Rev Lett 2008; 101:227003. [PMID: 19113514 DOI: 10.1103/physrevlett.101.227003] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/31/2007] [Revised: 03/18/2008] [Indexed: 05/27/2023]
Abstract
We establish the superconductor-insulator phase diagram for quasi-one-dimensional wires by measuring a large set of MoGe nanowires. This diagram is roughly consistent with the Chakravarty-Schmid-Bulgadaev phase boundary, namely, with the critical resistance being equal to RQ=h/4e2. Deviations from this boundary for a small fraction of the samples prompt us to suggest an alternative phase diagram, which matches the data exactly. Transport properties of wires in the superconducting phase are dominated by phase slips, whereas insulating nanowires exhibit a weak Coulomb blockade behavior.
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Affiliation(s)
- A T Bollinger
- Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801-3080, USA
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Gozar A, Logvenov G, Kourkoutis LF, Bollinger AT, Giannuzzi LA, Muller DA, Bozovic I. High-temperature interface superconductivity between metallic and insulating copper oxides. Nature 2008; 455:782-5. [PMID: 18843365 DOI: 10.1038/nature07293] [Citation(s) in RCA: 148] [Impact Index Per Article: 9.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/15/2007] [Accepted: 07/25/2008] [Indexed: 11/09/2022]
Abstract
The realization of high-transition-temperature (high-T(c)) superconductivity confined to nanometre-sized interfaces has been a long-standing goal because of potential applications and the opportunity to study quantum phenomena in reduced dimensions. This has been, however, a challenging target: in conventional metals, the high electron density restricts interface effects (such as carrier depletion or accumulation) to a region much narrower than the coherence length, which is the scale necessary for superconductivity to occur. By contrast, in copper oxides the carrier density is low whereas T(c) is high and the coherence length very short, which provides an opportunity-but at a price: the interface must be atomically perfect. Here we report superconductivity in bilayers consisting of an insulator (La(2)CuO(4)) and a metal (La(1.55)Sr(0.45)CuO(4)), neither of which is superconducting in isolation. In these bilayers, T(c) is either approximately 15 K or approximately 30 K, depending on the layering sequence. This highly robust phenomenon is confined within 2-3 nm of the interface. If such a bilayer is exposed to ozone, T(c) exceeds 50 K, and this enhanced superconductivity is also shown to originate from an interface layer about 1-2 unit cells thick. Enhancement of T(c) in bilayer systems was observed previously but the essential role of the interface was not recognized at the time.
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Affiliation(s)
- A Gozar
- Brookhaven National Laboratory, Upton, New York 11973-5000, USA
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Clayhold JA, Kerns BM, Schroer MD, Rench DW, Logvenov G, Bollinger AT, Bozovic I. Combinatorial measurements of Hall effect and resistivity in oxide films. Rev Sci Instrum 2008; 79:033908. [PMID: 18377026 DOI: 10.1063/1.2901622] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/26/2023]
Abstract
A system for the simultaneous measurement of the Hall effect in 31 different locations as well as the measurement of the resistivity in 30 different locations on a single oxide thin film grown with a composition gradient is described. Considerations for designing and operating a high-throughput system for characterizing highly conductive oxides with Hall coefficients as small as 10(-10) m3/C are discussed. Results from measurements on films grown using combinatorial molecular beam epitaxy show the usefulness of characterizing combinatorial libraries via both the resistivity and the Hall effect.
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Affiliation(s)
- J A Clayhold
- Department of Physics, Miami University, Oxford, Ohio 45056, USA
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Rogachev A, Wei TC, Pekker D, Bollinger AT, Goldbart PM, Bezryadin A. Magnetic-field enhancement of superconductivity in ultranarrow wires. Phys Rev Lett 2006; 97:137001. [PMID: 17026063 DOI: 10.1103/physrevlett.97.137001] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/13/2006] [Indexed: 05/12/2023]
Abstract
We study the effect of an applied magnetic field on sub-10-nm wide MoGe and Nb superconducting wires. We find that magnetic fields can enhance the critical supercurrent at low temperatures, and do so more strongly for narrower wires. We conjecture that magnetic moments are present, but their pair-breaking effect, active at lower magnetic fields, is suppressed by higher fields. The corresponding microscopic theory, which we have developed, quantitatively explains all experimental observations, and suggests that magnetic moments have formed on the wire surfaces.
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Affiliation(s)
- A Rogachev
- Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801-3080, USA
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Rogachev A, Bollinger AT, Bezryadin A. Influence of high magnetic fields on the superconducting transition of one-dimensional Nb and MoGe nanowires. Phys Rev Lett 2005; 94:017004. [PMID: 15698123 DOI: 10.1103/physrevlett.94.017004] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/08/2004] [Indexed: 05/24/2023]
Abstract
The effects of a strong magnetic field on superconducting Nb and MoGe nanowires with diameter approximately 10 nm have been studied. We have found that the Langer-Ambegaokar-McCumber-Halperin (LAMH) theory of thermally activated phase slips is applicable in a wide range of magnetic fields and describes well the temperature dependence of the wire resistance, over 11 orders of magnitude. The field dependence of the critical temperature, T(c), extracted from the LAMH fits is in good quantitative agreement with the theory of pair-breaking perturbations that takes into account both spin and orbital contributions. The extracted spin-orbit scattering time agrees with an estimate tau(s.o.) approximately tau(variant Planck's over 2pic/Ze(2))(4), where tau is the elastic scattering time and Z is the atomic number.
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Affiliation(s)
- A Rogachev
- Department of Physics, University of Illinois at Urbana-Champaign, Urbana, IL 61801-3080, USA
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