Single-photon detection using high-temperature superconductors

The detection of individual quanta of light is important for quantum communication, fluorescence lifetime imaging, remote sensing and more. Due to their high detection efficiency, exceptional signal-to-noise ratio and fast recovery times, superconducting-nanowire single-photon detectors (SNSPDs) have become a critical component in these applications. However, the operation of conventional SNSPDs requires costly cryocoolers. Here we report the fabrication of two types of high-temperature superconducting nanowires. We observe linear scaling of the photon count rate on the radiation power at the telecommunications wavelength of 1.5 μm and thereby reveal single-photon operation. SNSPDs made from thin flakes of Bi₂Sr₂CaCu₂O_8+δ exhibit a single-photon response up to 25 K, and for SNSPDs from La_1.55Sr_0.45CuO₄/La₂CuO₄ bilayer films, this response is observed up to 8 K. While the underlying detection mechanism is not fully understood yet, our work expands the family of materials for SNSPD technology beyond the liquid helium temperature limit and suggests that even higher operation temperatures may be reached using other high-temperature superconductors.

Bridging the Gap Between Nanowires and Josephson Junctions: A Superconducting Device Based on Controlled Fluxon Transfer

The basis for superconducting electronics can broadly be divided between two technologies: the Josephson junction and the superconducting nanowire. While the Josephson junction (JJ) remains the dominant technology due to its high speed and low power dissipation, recently proposed nanowire devices offer improvements such as gain, high fanout, and compatibility with CMOS circuits. Despite these benefits, nanowire-based electronics have largely been limited to binary operations, with devices switching between the superconducting state and a high-impedance resistive state dominated by uncontrolled hotspot dynamics. Unlike the JJ, they cannot increment an output through successive switching and their operation speeds are limited by their slow thermal-reset times. Thus, there is a need for an intermediate device with the interfacing capabilities of a nanowire but a faster, moderated response allowing for modulation of the output. We present a nanowire device based on controlled fluxon transport. We show that the device is capable of responding proportionally to the strength of its input, unlike other nanowire technologies. The device can be operated to produce a multilevel output with distinguishable states, the number of which can be tuned by circuit parameters. Agreement between experimental results and electrothermal circuit simulations demonstrates that the device is classical and may be readily engineered for applications including use as a multilevel memory.