1
|
Han ZL, Zhou Y. Plasmonic responses in Janus bAsP with elliptic-to-hyperbolic transition: an ab-initio study. OPTICS EXPRESS 2023; 31:39063-39078. [PMID: 38017995 DOI: 10.1364/oe.501333] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/24/2023] [Accepted: 10/24/2023] [Indexed: 11/30/2023]
Abstract
Plasmonic responses in materials with actively tunable elliptic-to-hyperbolic transition are rare in nature. Based on ab-initio calculations, we have theoretically predicted that Janus black arsenic phosphorus (bAsP) supports both elliptic and hyperbolic in-plane surface plasmon polaritons in the infrared after being doped with electrons. In the elliptic regime, anisotropic plasmonic responses have been observed, which can be explained by the anisotropic dispersions at the bottom of the conduction bands. In the hyperbolic regime, the total permittivity along the armchair/zigzag edge is negative/positive, which is the result of positive interband permittivities and largely different Drude plasma frequencies along two directions making the total permittivities change signs at different photon energies. In this material, changing the topology (elliptic or hyperbolic) of the plasmonic responses via doping is possible. Then, strains along the zigzag and armchair directions have been applied to modify the band structures as well as the plasmonic responses. Since plasmonic responses are mostly related to the bands near the Fermi energy, a relatively small strain along the zigzag direction can make bAsP become an indirect-bandgap material and change the Drude plasma frequencies under proper doping. With both strain and doping present in this material, we have even found a special case of hyperbolicity where the total permittivity in the zigzag/armchair direction is negative/positive, which is opposite to the normal case. In the end, we have extended our investigations to bAsP-graphene heterostructures. Since bAsP is a Janus material, such direct contact can change the Fermi energy through charge transfer making this heterostructure support strong plasmons without extra doping. Our investigations propose bAsP as a promising Janus material platform for plasmonic applications.
Collapse
|
2
|
Segui S, Gervasoni JL, Arista NR, Mišković ZL. Energy loss of charged particles in anisotropic 2D materials using the oscillator model. Micron 2023; 174:103521. [PMID: 37657167 DOI: 10.1016/j.micron.2023.103521] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/30/2023] [Revised: 07/19/2023] [Accepted: 07/30/2023] [Indexed: 09/03/2023]
Abstract
We apply the oscillator model to study the energy loss processes of external charged particles interacting with a 2D material characterized by an anisotropic conductivity tensor. We model the material as a monolayer of harmonic oscillators, with anisotropic electronic vibration modes. We focus on the cases of parallel and perpendicular trajectories of the external particle, and we obtain analytical expressions for the stopping power and total energy loss in terms of reduced variables. This allows us to analyze in detail the interaction and to adapt the model to the considered material using adequate values for the physical parameters involved.
Collapse
Affiliation(s)
- Silvina Segui
- Instituto de Física Enrique Gaviola (IFEG-CONICET), Facultad de Matemática, Astronomía, Física y Computación (FAMAF), Universidad Nacional de Córdoba, 5000 Córdoba, Argentina.
| | - Juana L Gervasoni
- Centro Atómico Bariloche, Comisión Nacional de Energía Atómica, and Instituto Balseiro, Universidad Nacional de Cuyo, Av. Bustillo 9500, 8400 S.C. de Bariloche, Argentina
| | - Néstor R Arista
- Centro Atómico Bariloche, Comisión Nacional de Energía Atómica, and Instituto Balseiro, Universidad Nacional de Cuyo, Av. Bustillo 9500, 8400 S.C. de Bariloche, Argentina
| | - Zoran L Mišković
- Department of Applied Mathematics and Waterloo Institute for Nanotechnology, University of Waterloo, Waterloo, Ontario, N2L 3G1 Canada
| |
Collapse
|
3
|
Chen H, Ge X, Wang Y, Xu Q, Li Z, Zhou X, Hao J, Hu W, Li S, Wang X. Uniaxial Strain-Induced Tunable Mid-infrared Light Emission from Thin Film Black Phosphorus. J Phys Chem Lett 2023; 14:2092-2098. [PMID: 36799775 DOI: 10.1021/acs.jpclett.3c00145] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Strain engineering is a powerful tool that can modulate semiconductor device performance. Here, we demonstrate that the bandgap of thin film (∼40 nm) black phosphorus (bP) can be continuously tuned from 2.9 to 3.9 μm by applying an in-plane uniaxial strain, as evidenced by mid-infrared photoluminescence (PL) spectroscopy. The deduced bandgap strain coefficients are ∼103 meV %-1, which coincide with those obtained in few-layer bP. On the basis of first-principles calculations, the origin of the uniaxial tensile strain-induced PL enhancement is suggested to be due to the increase in both the effective mass ratio (me*/mh*) and the bandgap, leading to the increment of the radiative efficiency. Moreover, the mid-infrared PL emission remains perfectly linear-polarized along the armchair direction regardless of tensile or compressive strain. The highly tunable bandgap of bP in the mid-infrared regime opens up opportunities for the realization of mid-infrared light-emitting diodes and lasers using layered materials.
Collapse
Affiliation(s)
- Hao Chen
- School of Materials and Chemistry, University of Shanghai for Science and Technology, Shanghai 200093, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Xun Ge
- Department of Physics, East China Normal University, Shanghai 200241, China
| | - Yiming Wang
- Department of Electronic Engineering, School of Information Science and Engineering, National Model Microelectronics College, Xiamen University, Xiamen 361005, China
| | - Qianqian Xu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Zhifeng Li
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Xiaohao Zhou
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Jiaming Hao
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai 200433, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Shengjuan Li
- School of Materials and Chemistry, University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Xingjun Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| |
Collapse
|
4
|
Koyappayil A, Yagati AK, Lee MH. Recent Trends in Metal Nanoparticles Decorated 2D Materials for Electrochemical Biomarker Detection. BIOSENSORS 2023; 13:91. [PMID: 36671926 PMCID: PMC9855691 DOI: 10.3390/bios13010091] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/07/2022] [Revised: 12/27/2022] [Accepted: 01/01/2023] [Indexed: 05/29/2023]
Abstract
Technological advancements in the healthcare sector have pushed for improved sensors and devices for disease diagnosis and treatment. Recently, with the discovery of numerous biomarkers for various specific physiological conditions, early disease screening has become a possibility. Biomarkers are the body's early warning systems, which are indicators of a biological state that provides a standardized and precise way of evaluating the progression of disease or infection. Owing to the extremely low concentrations of various biomarkers in bodily fluids, signal amplification strategies have become crucial for the detection of biomarkers. Metal nanoparticles are commonly applied on 2D platforms to anchor antibodies and enhance the signals for electrochemical biomarker detection. In this context, this review will discuss the recent trends and advances in metal nanoparticle decorated 2D materials for electrochemical biomarker detection. The prospects, advantages, and limitations of this strategy also will be discussed in the concluding section of this review.
Collapse
Affiliation(s)
| | | | - Min-Ho Lee
- School of Integrative Engineering, Chung-Ang University, 84 Heuseok-ro, Dongjak-Gu, Seoul 06974, Republic of Korea
| |
Collapse
|
5
|
Akbari K, Mišković ZL. Directional effects in plasmon excitation and transition radiation from an anisotropic 2D material induced by a fast charged particle. NANOSCALE 2022; 14:5079-5093. [PMID: 35296875 DOI: 10.1039/d1nr06307c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
We present a relativistic formulation of the energy loss of a charged particle traversing an anisotropic layer under arbitrary angle of incidence. We use a model for the conductivity tensor describing doped phosphorene, which supports plasmon polariton modes (PPMs) that exhibit a topological transition between elliptic and hyperbolic iso-frequency dispersion curves in the THz to the mid-infrared (MIR) frequency range. The total distribution of the momentum transfer and energy loss of the charged particle goes to excitation of the PPMs followed by their decay in phosphorene (Ohmic losses) and the energy that is emitted as transition radiation (TR). We show that the elliptic modes are efficiently excited in the THz range by relativistic particles, but the corresponding Ohmic distributions do not exhibit significant anisotropy. Contrastingly, hyperbolic modes are efficiently excited in the MIR range by slow particles moving under oblique incidence, producing Ohmic distributions that show strong directionality of propagation with large wavevectors associated with the asymptotes of the hyperbolic dispersion curves. The most dramatic effects of the anisotropic layer conductivity are seen in the angular spectra of the TR, with quite distinct and unexpected shapes of the radiation patterns emitted at the THz and MIR frequencies, even for a normal incidence of the charged particle. Those patterns are substantially skewed for oblique incidence, when they show a marked anisotropy relative to the principal axes of the layer. Such a rich variety of the TR spectra should be readily observable via angle-resolved measurements in a transmission electron microscope.
Collapse
Affiliation(s)
- Kamran Akbari
- Department of Applied Mathematics, University of Waterloo, Waterloo, Ontario, Canada.
| | - Zoran L Mišković
- Department of Applied Mathematics, University of Waterloo, Waterloo, Ontario, Canada.
- Waterloo Institute for Nanotechnology, University of Waterloo, Waterloo, Ontario, Canada
| |
Collapse
|
6
|
Ko W, Gai Z, Puretzky AA, Liang L, Berlijn T, Hachtel JA, Xiao K, Ganesh P, Yoon M, Li AP. Understanding Heterogeneities in Quantum Materials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022:e2106909. [PMID: 35170112 DOI: 10.1002/adma.202106909] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/31/2021] [Revised: 02/08/2022] [Indexed: 06/14/2023]
Abstract
Quantum materials are usually heterogeneous, with structural defects, impurities, surfaces, edges, interfaces, and disorder. These heterogeneities are sometimes viewed as liabilities within conventional systems; however, their electronic and magnetic structures often define and affect the quantum phenomena such as coherence, interaction, entanglement, and topological effects in the host system. Therefore, a critical need is to understand the roles of heterogeneities in order to endow materials with new quantum functions for energy and quantum information science applications. In this article, several representative examples are reviewed on the recent progress in connecting the heterogeneities to the quantum behaviors of real materials. Specifically, three intertwined topic areas are assessed: i) Reveal the structural, electronic, magnetic, vibrational, and optical degrees of freedom of heterogeneities. ii) Understand the effect of heterogeneities on the behaviors of quantum states in host material systems. iii) Control heterogeneities for new quantum functions. This progress is achieved by establishing the atomistic-level structure-property relationships associated with heterogeneities in quantum materials. The understanding of the interactions between electronic, magnetic, photonic, and vibrational states of heterogeneities enables the design of new quantum materials, including topological matter and quantum light emitters based on heterogenous 2D materials.
Collapse
Affiliation(s)
- Wonhee Ko
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - Zheng Gai
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - Alexander A Puretzky
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - Liangbo Liang
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - Tom Berlijn
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - Jordan A Hachtel
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - Kai Xiao
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - Panchapakesan Ganesh
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - Mina Yoon
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - An-Ping Li
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| |
Collapse
|
7
|
Wu Z, Lyu Y, Zhang Y, Ding R, Zheng B, Yang Z, Lau SP, Chen XH, Hao J. Large-scale growth of few-layer two-dimensional black phosphorus. NATURE MATERIALS 2021; 20:1203-1209. [PMID: 33972761 DOI: 10.1038/s41563-021-01001-7] [Citation(s) in RCA: 99] [Impact Index Per Article: 24.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/02/2020] [Accepted: 04/01/2021] [Indexed: 06/12/2023]
Abstract
Two-dimensional materials provide opportunities for developing semiconductor applications at atomistic thickness to break the limits of silicon technology. Black phosphorus (BP), as a layered semiconductor with controllable bandgap and high carrier mobility, is one of the most promising candidates for transistor devices at atomistic thickness1-4. However, the lack of large-scale growth greatly hinders its development in devices. Here, we report the growth of ultrathin BP on the centimetre scale through pulsed laser deposition. The unique plasma-activated region induced by laser ablation provides highly desirable conditions for BP cluster formation and transportation5,6, facilitating growth. Furthermore, we fabricated large-scale field-effect transistor arrays on BP films, yielding appealing hole mobility of up to 213 and 617 cm2 V-1 s-1 at 295 and 250 K, respectively. Our results pave the way for further developing BP-based wafer-scale devices with potential applications in the information industry.
Collapse
Affiliation(s)
- Zehan Wu
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, People's Republic of China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, People's Republic of China
| | - Yongxin Lyu
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, People's Republic of China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, People's Republic of China
| | - Yi Zhang
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, People's Republic of China
| | - Ran Ding
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, People's Republic of China
| | - Beining Zheng
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, People's Republic of China
| | - Zhibin Yang
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, People's Republic of China
| | - Shu Ping Lau
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, People's Republic of China
| | - Xian Hui Chen
- Hefei National Laboratory for Physical Sciences at Microscale and Department of Physics, and CAS Key Laboratory of Strongly-coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, People's Republic of China.
| | - Jianhua Hao
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, People's Republic of China.
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, People's Republic of China.
| |
Collapse
|
8
|
Systematic competition between strain and electric field stimuli in tuning EELS of phosphorene. Sci Rep 2021; 11:3716. [PMID: 33580112 PMCID: PMC7881155 DOI: 10.1038/s41598-021-83213-0] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/16/2020] [Accepted: 11/25/2020] [Indexed: 11/23/2022] Open
Abstract
The strongly anisotropic properties of phosphorene makes it an attractive material for applications in deciding the specific direction for different purposes. Here we have particularly reported the competition between strain and electric field stimuli in evaluating the band gap and electron energy loss spectrum (EELS) of single-layer black phosphorus using the tight-binding method and the Kubo conductivity. We construct possible configurations for this competition and evaluate the interband optical excitations considering the corresponding band gap variations. The band gap increases with the individual electric field, while it increases (decreases) with tensile (compressive) uniaxial in-plane strain. Contrary to the in-plane strains, the uniaxial out-of-plane strain shows a critical strain at which the system suffers from a phase transition. Furthermore, the presence of these stimuli simultaneously results in an extraordinary band gap engineering. Based on the EELS response in the electromagnetic spectrum, the armchair (zigzag) direction is classified into the infrared and visible (ultraviolet) region. We report that the electric field gives rise to the blue shift in the interband optical transitions along the armchair direction, while the compressive/tensile (tensile/compressive) in-plane/out-of-plane strain provides a red (blue) shift. Moreover, we observe an inverse behavior of EELS response to the individual and combined effects of electric field and strains compared to the band gap behavior except at critical out-of-plane strain for which the physical theory of interband excitation is simply violated. Our results provide a new perspective on the applicability of phosphorene in stimulated optical applications.
Collapse
|
9
|
Yun H, Ghosh S, Golani P, Koester SJ, Mkhoyan KA. Layer Dependence of Dielectric Response and Water-Enhanced Ambient Degradation of Highly Anisotropic Black As. ACS NANO 2020; 14:5988-5997. [PMID: 32310631 DOI: 10.1021/acsnano.0c01506] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Black arsenic (BAs) is a van der Waals layered material with a puckered honeycomb structure and has received increased interest due to its anisotropic properties and promising performance in devices. Here, crystalline structure, thickness-dependent dielectric responses, and ambient stability of BAs nanosheets are investigated using scanning transmission electron microscopy (STEM) imaging and spectroscopy. Atomic-resolution high-angle annular dark-field (HAADF)-STEM images directly visualize the three-dimensional structure and evaluate the degree of anisotropy. STEM-electron energy loss spectroscopy is used to measure the dielectric response of BAs as a function of the number of layers. Finally, BAs degradation under different ambient environments is studied, highlighting high sensitivity to moisture in the air.
Collapse
Affiliation(s)
- Hwanhui Yun
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, United States
| | - Supriya Ghosh
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, United States
| | - Prafful Golani
- Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, Minnesota 55455, United States
| | - Steven J Koester
- Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, Minnesota 55455, United States
| | - K Andre Mkhoyan
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, United States
| |
Collapse
|