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Min L, Sun H, Guo L, Wang M, Cao F, Zhong J, Li L. Frequency-selective perovskite photodetector for anti-interference optical communications. Nat Commun 2024; 15:2066. [PMID: 38453948 PMCID: PMC10920912 DOI: 10.1038/s41467-024-46468-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/31/2023] [Accepted: 02/28/2024] [Indexed: 03/09/2024] Open
Abstract
Free-space coupling, essential for various communication applications, often faces significant signal loss and interference from ambient light. Traditional methods rely on integrating complex optical and electronic systems, leading to bulkier and costlier communication equipment. Here, we show an asymmetric 2D-3D-2D perovskite structure device to achieve a frequency-selective photoresponse in a single device. By combining two electromotive forces of equal magnitude in the opposite directions, the device output is attenuated to zero under constant light illumination. Because these reverse photodiodes have different response speeds, the device only responds near a certain frequency, which can be tuned by manipulating the 2D perovskite components. The target device achieves an ultrafast response of 19.7/18.3 ns in the frequency-selective photoresponse range 0.8-9.7 MHz. This anti-interference photodetector can accurately transmit character and video data under strong light interference with a source intensity of up to 454 mW cm-2.
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Affiliation(s)
- Liangliang Min
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, China
| | - Haoxuan Sun
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, China.
| | - Linqi Guo
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, China
| | - Meng Wang
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, China
| | - Fengren Cao
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, China
| | - Jun Zhong
- Institute of Functional Nano and Soft Materials Laboratory (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, China
| | - Liang Li
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, China.
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2
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Han S, Zhu D, Yue De W, Xia H, Cao P, Liu W, Zeng Y, Fang M. High performance solar-blind UV detector with Mg 0.472Zn 0.528O/Mg 0.447Zn 0.553O double layer structure on MgO substrate. NANOTECHNOLOGY 2024; 35:215204. [PMID: 38335555 DOI: 10.1088/1361-6528/ad2813] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/18/2023] [Accepted: 02/09/2024] [Indexed: 02/12/2024]
Abstract
Mg0.472Zn0.528O/Mg0.447Zn0.553O double layer structure UV detectors are made on single structure MgO substrate by PLD method, and the effect of different thickness top MgZnO layer on the UV response characteristics of the detector are studied. Compared with the single layer MgZnO detector that made by Mg0.3Zn0.7O target, the Mg0.472Zn0.528O/Mg0.447Zn0.553O double layer detector with 30 nm top layer, shows much higher deep UV response (21.3 A W-1at 265 nm), much smaller dark current(66.9 pA) and much higher signal-to-noise ratio (2.8 × 105) at 25 V bias voltage. And the device also shows relative high response (23.1 A W-1) at 235 nm deep UV light at 25 V bias voltage, which is mainly attributed by the bottom MgZnO layer with higher Mg composition. When the top layer is 66.7 nm thick, the response of the Mg0.472Zn0.528O/Mg0.447Zn0.553O detector reached 228.8 A W-1at 255 nm under 25 V bias voltage, the signal-to-noise ratio of which is 10573 under 20 V bias voltage, and the near UV response of the device is also big because of more h-MgZnO in top MgZnO layer. When the top layer reached 90.2 nm, there are much more h-MgZnO in the top MgZnO layer, the peak response of the Mg0.472Zn0.528O/Mg0.447Zn0.553O detector is just 6.65 A W-1at 320 nm under 25 V bias voltage, the signal-to-noise ratio of which is 1248. The high Mg composition bottom MgZnO decrease the dark current of the Mg0.472Zn0.528O/Mg0.447Zn0.553O detector, both the 2DEG effect of the double layer structure and the amplify effect of the mix-phase MgZnO top layer, increased theIuvand deep UV response of the Mg0.472Zn0.528O/Mg0.447Zn0.553O detector. Therefore, the double layer Mg0.472Zn0.528O/Mg0.447Zn0.553O detector is more sensitive at faint deep UV light compared with previous reported MgZnO detectors, and the MgxZn1-xO/MgyZn1-yO detector shows similarIuvand signal-noise-ratio at faint deep UV light as high-temperature fabricated AlxGa1-xN/AlyGa1-yN detectors.
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Affiliation(s)
- Shun Han
- College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Deliang Zhu
- College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Wu Yue De
- Technology Research Institute, Shenzhen Institute of Information Technology, Shenzhen, 518172, People's Republic of China
| | - Hao Xia
- College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Peijiang Cao
- College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Wenjun Liu
- College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Yuxiang Zeng
- College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Ming Fang
- College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, Shenzhen, 518060, People's Republic of China
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3
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Jia H, Zhang R, Niu X, Zhang X, Zhou H, Liu X, Fang Z, Chang F, Guan BO, Qiu J. Enabling Broadband Solar-Blind UV Photodetection by a Rare-Earth Doped Oxyfluoride Transparent Glass-Ceramic. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2309433. [PMID: 38225714 DOI: 10.1002/advs.202309433] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/05/2023] [Revised: 12/24/2023] [Indexed: 01/17/2024]
Abstract
Oxyfluoride transparent glass-ceramics (GC) are widely used as the matrix for rare-earth (RE) ions due to their unique properties such as low phonon energy, high transmittance, and high solubility for RE ions. Tb3+ doped oxyfluoride glasses exhibit a large absorption cross section for ultraviolet (UV) excitation, high stability, high photoluminescence quantum efficiency, and sensitive spectral conversion characteristics, making them promising candidate materials for use as the spectral converter in UV photodetectors. Herein, a Tb3+ doped oxyfluoride GC is developed by using the melt-quenching method, and the microstructure and optical properties of the GC sample are carefully investigated. By combining with a Si-based photo-resistor,a solar-blind UV detector is fabricated, which exhibits a significant photoelectric response with a broad detection range from 188 to 400 nm. The results indicate that the designed UV photodetector is of great significance for the development of solar-blind UV detectors.
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Affiliation(s)
- Hong Jia
- College of Physics and Electronic Information & Henan Key Laboratory of Electromagnetic Transformation and Detection, Luoyang Normal University, Luoyang, 471934, China
- Longmen Laboratory of Luoyang, Luoyang, 471000, China
| | - Rui Zhang
- College of Physics and Electronic Information & Henan Key Laboratory of Electromagnetic Transformation and Detection, Luoyang Normal University, Luoyang, 471934, China
| | - Xuying Niu
- College of Physics and Electronic Information & Henan Key Laboratory of Electromagnetic Transformation and Detection, Luoyang Normal University, Luoyang, 471934, China
| | - Xian Zhang
- Department of Optoelectronics Science, Harbin Institute of Technology, Weihai, 264209, China
| | - Hui Zhou
- College of Physics and Electronic Information & Henan Key Laboratory of Electromagnetic Transformation and Detection, Luoyang Normal University, Luoyang, 471934, China
| | - Xiaofeng Liu
- School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Zaijin Fang
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Institute of Photonics Technology, Jinan University, Guangzhou, 511443, China
| | - Fei Chang
- Senba Sensing Technology Co., Ltd., NanYang, 473300, China
| | - Bai-Ou Guan
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Institute of Photonics Technology, Jinan University, Guangzhou, 511443, China
| | - Jianrong Qiu
- College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, China
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4
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Zhang ZH, Yan SS, Chen YL, Lian ZD, Fu A, Kong YC, Li L, Su SC, Ng KW, Wei ZP, Liu HC, Wang SP. Air-Stable Self-Driven UV Photodetectors on Controllable Lead-Free CsCu 2I 3 Microwire Arrays. ACS APPLIED MATERIALS & INTERFACES 2024; 16:10398-10406. [PMID: 38380978 PMCID: PMC10910456 DOI: 10.1021/acsami.3c17881] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/29/2023] [Revised: 01/29/2024] [Accepted: 02/05/2024] [Indexed: 02/22/2024]
Abstract
The rapid evolution of the Internet of Things has engendered increased requirements for low-cost, self-powered UV photodetectors. Herein, high-performance self-driven UV photodetectors are fabricated by designing asymmetric metal-semiconductor-metal structures on the high-quality large-area CsCu2I3 microwire arrays. The asymmetrical depletion region doubles the photocurrent and response speed compared to the symmetric structure device, leading to a high responsivity of 233 mA/W to 355 nm radiation. Notably, at 0 V bias, the asymmetric device produces an open-circuit voltage of 356 mV and drives to a short-circuit current of 372 pA; meanwhile, the switch ratio (Iph/Idark) reaches up to 103, indicating its excellent potential for detecting weak light. Furthermore, the device maintains stable responses throughout 10000 UV-light switch cycles, with negligible degradation even after 90-day storage in air. Our work establishes that CsCu2I3 is a good candidate for self-powered UV detection and thoroughly demonstrates its potential as a passive device.
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Affiliation(s)
- Zhi-Hong Zhang
- State
Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China
- Institute
of Applied Physics and Materials Engineering, University of Macau, Taipa, Macao SAR 999078, China
| | - Shan-Shan Yan
- Institute
of Applied Physics and Materials Engineering, University of Macau, Taipa, Macao SAR 999078, China
| | - Yu-Long Chen
- Institute
of Applied Physics and Materials Engineering, University of Macau, Taipa, Macao SAR 999078, China
| | - Zhen-Dong Lian
- Institute
of Applied Physics and Materials Engineering, University of Macau, Taipa, Macao SAR 999078, China
| | - Ai Fu
- Institute
of Applied Physics and Materials Engineering, University of Macau, Taipa, Macao SAR 999078, China
| | - You-Chao Kong
- Institute
of Applied Physics and Materials Engineering, University of Macau, Taipa, Macao SAR 999078, China
| | - Lin Li
- Key
Laboratory for Photonic and Electronic Bandgap Materials, Ministry
of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, China
| | - Shi-Chen Su
- School
of Semiconductor Science and Technology, South China Normal University, Foshan 528000, China
| | - Kar-Wei Ng
- Institute
of Applied Physics and Materials Engineering, University of Macau, Taipa, Macao SAR 999078, China
| | - Zhi-Peng Wei
- State
Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China
| | - Hong-Chao Liu
- Institute
of Applied Physics and Materials Engineering, University of Macau, Taipa, Macao SAR 999078, China
| | - Shuang-Peng Wang
- Institute
of Applied Physics and Materials Engineering, University of Macau, Taipa, Macao SAR 999078, China
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5
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Jiang L, Yang L, Wu X, Wang X, Zheng L, Xu W, Qiu L. Helical Nanofiber Photoelectric Synaptic Devices for an Artificial Vision Nervous System. NANO LETTERS 2023; 23:8146-8154. [PMID: 37579217 DOI: 10.1021/acs.nanolett.3c02266] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/16/2023]
Abstract
Inspired by the helical structure and the resultant exquisite functions of biomolecules, helical polymers have received increasing attention. Here, a series of poly(3-hexylthiophene)-block-poly(phenyl isocyanide) (P3HT-b-PPI) copolymers were prepared using a simple one-pot living polymerization method. Interestingly, the P3HT80-b-PPI30 films were found to have a helical nanofiber structure. The corresponding device has superior optoelectronic properties, such as a broadened spectral response range from the visible band to the deep ultraviolet (DUV) and an approximately 5-fold longer carrier decay time after DUV light stimulation. An energy consumption of 1.44 fJ per synaptic event was obtained, which is the lowest energy consumption achieved so far with DUV light stimulation. The encryption and decryption of images are implemented using an array of devices. Finally, a photoreceptor neural pathway was constructed to achieve early warning for the recognition of the display of harmful light. This research provides an effective strategy for the development of a novel optoelectronic synaptic device.
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Affiliation(s)
- Longlong Jiang
- National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Optoelectronic Technology, Hefei University of Technology, Hefei 230009, P. R. China
- Intelligent Interconnected Systems Laboratory of Anhui, Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Optoelectronic Engineering, Hefei University of Technology, Hefei 230009, P. R. China
| | - Lu Yang
- Institute of Photoelectronic Thin Film Devices and Technology Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300350, P. R. China
| | - Xiaocheng Wu
- National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Optoelectronic Technology, Hefei University of Technology, Hefei 230009, P. R. China
- Intelligent Interconnected Systems Laboratory of Anhui, Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Optoelectronic Engineering, Hefei University of Technology, Hefei 230009, P. R. China
| | - Xiaohong Wang
- National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Optoelectronic Technology, Hefei University of Technology, Hefei 230009, P. R. China
- Intelligent Interconnected Systems Laboratory of Anhui, Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Optoelectronic Engineering, Hefei University of Technology, Hefei 230009, P. R. China
| | - Lei Zheng
- School of Food and Biological Engineering, Hefei University of Technology, Hefei 230009, P. R. China
| | - Wentao Xu
- Institute of Photoelectronic Thin Film Devices and Technology Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300350, P. R. China
| | - Longzhen Qiu
- National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Optoelectronic Technology, Hefei University of Technology, Hefei 230009, P. R. China
- Intelligent Interconnected Systems Laboratory of Anhui, Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Optoelectronic Engineering, Hefei University of Technology, Hefei 230009, P. R. China
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Wang H, Dong C, Gui Y, Ye J, Altaleb S, Thomaschewski M, Movahhed Nouri B, Patil C, Dalir H, Sorger VJ. Self-Powered Sb 2Te 3/MoS 2 Heterojunction Broadband Photodetector on Flexible Substrate from Visible to Near Infrared. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:1973. [PMID: 37446489 DOI: 10.3390/nano13131973] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/16/2023] [Revised: 06/19/2023] [Accepted: 06/25/2023] [Indexed: 07/15/2023]
Abstract
Van der Waals (vdWs) heterostructures, assembled by stacking of two-dimensional (2D) crystal layers, have emerged as a promising new material system for high-performance optoelectronic applications, such as thin film transistors, photodetectors, and light-emitters. In this study, we showcase an innovative device that leverages strain-tuning capabilities, utilizing a MoS2/Sb2Te3 vdWs p-n heterojunction architecture designed explicitly for photodetection across the visible to near-infrared spectrum. These heterojunction devices provide ultra-low dark currents as small as 4.3 pA, a robust photoresponsivity of 0.12 A W-1, and reasonable response times characterized by rising and falling durations of 0.197 s and 0.138 s, respectively. These novel devices exhibit remarkable tunability under the application of compressive strain up to 0.3%. The introduction of strain at the heterojunction interface influences the bandgap of the materials, resulting in a significant alteration of the heterojunction's band structure. This subsequently shifts the detector's optical absorption properties. The proposed strategy of strain-induced engineering of the stacked 2D crystal materials allows the tuning of the electronic and optical properties of the device. Such a technique enables fine-tuning of the optoelectronic performance of vdWs devices, paving the way for tunable high-performance, low-power consumption applications. This development also holds significant potential for applications in wearable sensor technology and flexible electro-optic circuits.
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Affiliation(s)
- Hao Wang
- Optelligence LLC, 10703 Marlboro Pike, Upper Marlboro, MD 20772, USA
- Department of Electrical & Computer Engineering, University of Florida, 968 Center Drive 216 Larsen Hall, Gainesville, FL 32611, USA
| | - Chaobo Dong
- Department of Electrical and Computer Engineering, The George Washington University, 800 22nd Street, Washington, DC 20052, USA
| | - Yaliang Gui
- Department of Electrical and Computer Engineering, The George Washington University, 800 22nd Street, Washington, DC 20052, USA
| | - Jiachi Ye
- Department of Electrical & Computer Engineering, University of Florida, 968 Center Drive 216 Larsen Hall, Gainesville, FL 32611, USA
| | - Salem Altaleb
- Department of Electrical & Computer Engineering, University of Florida, 968 Center Drive 216 Larsen Hall, Gainesville, FL 32611, USA
| | - Martin Thomaschewski
- Department of Electrical and Computer Engineering, The George Washington University, 800 22nd Street, Washington, DC 20052, USA
| | - Behrouz Movahhed Nouri
- Optelligence LLC, 10703 Marlboro Pike, Upper Marlboro, MD 20772, USA
- Department of Electrical and Computer Engineering, The George Washington University, 800 22nd Street, Washington, DC 20052, USA
| | - Chandraman Patil
- Department of Electrical and Computer Engineering, The George Washington University, 800 22nd Street, Washington, DC 20052, USA
| | - Hamed Dalir
- Department of Electrical & Computer Engineering, University of Florida, 968 Center Drive 216 Larsen Hall, Gainesville, FL 32611, USA
| | - Volker J Sorger
- Optelligence LLC, 10703 Marlboro Pike, Upper Marlboro, MD 20772, USA
- Department of Electrical and Computer Engineering, The George Washington University, 800 22nd Street, Washington, DC 20052, USA
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7
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Li M, Cao C, Liu W, Wang N, Yi C, Li R, Wang J. Orientation Regulation of One-Dimensional CsCu 2I 3 Perovskites for Visible-Blind Ultraviolet Photodetectors. J Phys Chem Lett 2022; 13:6462-6467. [PMID: 35816700 DOI: 10.1021/acs.jpclett.2c01715] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Ternary copper halides with a formula of CsCu2X3 (X = Cl, Br, I) have been considered as prospective materials for ultraviolet (UV) photodetectors, due to their suitable band gaps, environmental stability, eco-friendliness, and low cost. However, the crystal orientation of one-dimensional (1D) CsCu2X3 perovskites significantly affects the exciton/carrier transport in the films and thus the photodetector performance. Here, we tune the crystal orientation and exciton/charge transport of 1D CsCu2I3 perovskite films by using antisolvents during the film formation process. Compared to the randomly oriented film treated by ethyl acetate, the CsCu2I3 film using toluene as antisolvent exhibits preferential (221)-oriented growth, which induces enhanced vertical exciton diffusion/charge transport and suppressed nonradiative recombination. On the basis of this strategy, we demonstrate a self-powered, stable, and visible-blind UV photodetector with significantly enhanced response speed and detectivity. Our work clarifies that tuning the crystal orientation of 1D CsCu2X3 perovskites is the key to achieve efficient exciton diffusion/charge transport and thus high-performance lead-free perovskite optoelectronic devices.
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Affiliation(s)
- Mingda Li
- Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Chensi Cao
- Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Wenbo Liu
- Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Nana Wang
- Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Chang Yi
- Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Renzhi Li
- Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Jianpu Wang
- Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
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8
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Chen Y, Yang X, Zhang C, He G, Chen X, Qiao Q, Zang J, Dou W, Sun P, Deng Y, Dong L, Shan CX. Ga 2O 3-Based Solar-Blind Position-Sensitive Detector for Noncontact Measurement and Optoelectronic Demodulation. NANO LETTERS 2022; 22:4888-4896. [PMID: 35666185 DOI: 10.1021/acs.nanolett.2c01322] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
As a kind of photodetector, position-sensitive-detectors (PSDs) have been widely used in noncontact photoelectric positioning and measurement. However, fabrications and applications of solar-blind PSDs remain yet to be harnessed. Herein, we demonstrate a solar-blind PSD developed from a graphene/Ga2O3 Schottky junction with a 25-nanometer-thick Ga2O3 film, in which the absorption of the nanometer-thick Ga2O3 is enhanced by multibeam interference. The graphene/Ga2O3 junction exhibits a responsivity of 48.5 mA/W and a rise/decay time of 0.8/99.8 μs at zero bias. Moreover, the position of the solar-blind spot can be determined by the output signals of the PSD. Using the device as a sensor of noncontact test systems, we demonstrate its application in measurement of angular, displacement, and light trajectory. In addition, the position-sensitive outputs have been used to demodulate optical signals into electrical signals. The results may prospect the application of solar-blind PSDs in measurement, tracking, communication, and so on.
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Affiliation(s)
- Yancheng Chen
- Henan Key Laboratory of Diamond Optoelectronic Material and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Xun Yang
- Henan Key Laboratory of Diamond Optoelectronic Material and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Chongyang Zhang
- Henan Key Laboratory of Diamond Optoelectronic Material and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Gaohang He
- Vacuum Interconnected Nanotech Workstation (Nano-X), Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, China
| | - Xuexia Chen
- Henan Key Laboratory of Diamond Optoelectronic Material and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Qian Qiao
- School of Marine Engineering Equipment, Zhejiang Ocean University, Zhoushan, Zhejiang 316022, China
| | - Jinhao Zang
- Henan Key Laboratory of Diamond Optoelectronic Material and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Wenjie Dou
- Henan Key Laboratory of Diamond Optoelectronic Material and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Pengxiang Sun
- Henan Key Laboratory of Diamond Optoelectronic Material and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Yuan Deng
- Henan Key Laboratory of Diamond Optoelectronic Material and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Lin Dong
- Henan Key Laboratory of Diamond Optoelectronic Material and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Chong-Xin Shan
- Henan Key Laboratory of Diamond Optoelectronic Material and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
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Wu CY, Wang M, Li J, Le Y, Fei W, Hu JG, Wu D, Zhou YX, Luo LB. Non-Ultrawide Bandgap Semiconductor GaSe Nanobelts for Sensitive Deep Ultraviolet Light Photodetector Application. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2200594. [PMID: 35561026 DOI: 10.1002/smll.202200594] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/27/2022] [Revised: 04/19/2022] [Indexed: 06/15/2023]
Abstract
In this paper, the authors report the fabrication of a sensitive deep ultraviolet (DUV) photodetector by using an individual GaSe nanobelt with a thickness of 52.1 nm, which presents the highest photoresponse at 265 nm illumination with a responsivity and photoconductive gain of about 663 A W-1 and 3103 at a 3 V bias, respectively, comparable to or even better than other reported devices based on conventional wide bandgap semiconductors. According to the simulation, this photoelectric property is associated with the wavelength-dependent absorption coefficient of the GaSe crystal, for which incident light with shorter wavelengths will be absorbed near the surface, while light with longer wavelengths will have a larger penetration depth, leading to a blueshift of the absorption edge with decreasing thickness. Further finite element method (FEM) simulation reveals that the relatively thin GaSe nanobelt exhibits an enhanced transversal standing wave pattern compared to its thicker counterpart at a wavelength of 265 nm, leading to an enhanced light-matter interaction and thereby more efficient photocurrent generation. The device can also function as an effective image sensor with acceptable spatial resolution. This work will shed light on the facile fabrication of a high-performance DUV photodetector from non-ultrawide bandgap semiconductors.
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Affiliation(s)
- Chun-Yan Wu
- School of Microelectronics, Hefei University of Technology, Hefei, 230009, China
| | - Ming Wang
- School of Microelectronics, Hefei University of Technology, Hefei, 230009, China
| | - Jingyue Li
- School of Microelectronics, Hefei University of Technology, Hefei, 230009, China
| | - Yuxuan Le
- School of Microelectronics, Hefei University of Technology, Hefei, 230009, China
| | - Wu Fei
- School of Physics, Hefei University of Technology, Hefei, 230009, China
| | - Ji-Gang Hu
- School of Physics, Hefei University of Technology, Hefei, 230009, China
| | - Di Wu
- School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450052, China
| | - Yu-Xue Zhou
- College of Physical Science and Technology, Yangzhou University, Yangzhou, 225002, China
| | - Lin-Bao Luo
- School of Microelectronics, Hefei University of Technology, Hefei, 230009, China
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Dong Y, Sun Y, Liu J, Shi X, Li H, Zhang J, Li C, Yi Y, Mo S, Fan L, Jiang L. Thermally Stable Organic Field-Effect Transistors Based on Asymmetric BTBT Derivatives for High Performance Solar-Blind Photodetectors. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2106085. [PMID: 35182036 PMCID: PMC9036011 DOI: 10.1002/advs.202106085] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/29/2021] [Revised: 02/03/2022] [Indexed: 06/14/2023]
Abstract
High-performance solar-blind photodetectors are widely studied due to their unique significance in military and industrial applications. Yet the rational molecular design for materials to possess strong absorption in solar-blind region is rarely addressed. Here, an organic solar-blind photodetector is reported by designing a novel asymmetric molecule integrated strong solar-blind absorption with high charge transport property. Such alkyl substituted [1]benzothieno[3,2-b][1]-benzothiophene (BTBT) derivatives Cn-BTBTN (n = 6, 8, and 10) can be easily assembled into 2D molecular crystals and perform high mobility up to 3.28 cm2 V-1 s-1 , which is two orders of magnitude higher than the non-substituted core BTBTN. Cn-BTBTNs also exhibit dramatically higher thermal stability than the symmetric alkyl substituted C8-BTBT. Moreover, C10-BTBTN films with the highest mobility and strongest solar-blind absorption among the Cn-BTBTNs are applied for solar-blind photodetectors, which reveal record-high photosensitivity and detectivity up to 1.60 × 107 and 7.70 × 1014 Jones. Photodetector arrays and flexible devices are also successfully fabricated. The design strategy can provide guidelines for developing materials featuring high thermal stability and stimulating such materials in solar-blind photodetector application.
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Affiliation(s)
- Yicai Dong
- Beijing National Laboratory for Molecular SciencesKey Laboratory of Organic SolidsInstitute of ChemistryChinese Academy of SciencesBeijing100190China
- University of the Chinese Academy of SciencesBeijing100049China
| | - Yanan Sun
- Beijing National Laboratory for Molecular SciencesKey Laboratory of Organic SolidsInstitute of ChemistryChinese Academy of SciencesBeijing100190China
- University of the Chinese Academy of SciencesBeijing100049China
| | - Jie Liu
- Beijing National Laboratory for Molecular SciencesKey Laboratory of Organic SolidsInstitute of ChemistryChinese Academy of SciencesBeijing100190China
| | - Xiaosong Shi
- Beijing National Laboratory for Molecular SciencesKey Laboratory of Organic SolidsInstitute of ChemistryChinese Academy of SciencesBeijing100190China
- University of the Chinese Academy of SciencesBeijing100049China
| | - Haiyang Li
- Beijing National Laboratory for Molecular SciencesKey Laboratory of Organic SolidsInstitute of ChemistryChinese Academy of SciencesBeijing100190China
- University of the Chinese Academy of SciencesBeijing100049China
| | - Jing Zhang
- Beijing National Laboratory for Molecular SciencesKey Laboratory of Organic SolidsInstitute of ChemistryChinese Academy of SciencesBeijing100190China
- University of the Chinese Academy of SciencesBeijing100049China
| | - Chunlei Li
- Beijing National Laboratory for Molecular SciencesKey Laboratory of Organic SolidsInstitute of ChemistryChinese Academy of SciencesBeijing100190China
- University of the Chinese Academy of SciencesBeijing100049China
| | - Yuanping Yi
- Beijing National Laboratory for Molecular SciencesKey Laboratory of Organic SolidsInstitute of ChemistryChinese Academy of SciencesBeijing100190China
| | - Song Mo
- Key Laboratory of Science and Technology on High‐tech Polymer MaterialsChinese Academy of SciencesInstitute of ChemistryChinese Academy of SciencesBeijing100190China
| | - Lin Fan
- Key Laboratory of Science and Technology on High‐tech Polymer MaterialsChinese Academy of SciencesInstitute of ChemistryChinese Academy of SciencesBeijing100190China
| | - Lang Jiang
- Beijing National Laboratory for Molecular SciencesKey Laboratory of Organic SolidsInstitute of ChemistryChinese Academy of SciencesBeijing100190China
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11
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Jiang L, Xu C, Wu X, Zhao X, Zhang L, Zhang G, Wang X, Qiu L. Deep Ultraviolet Light Stimulated Synaptic Transistors Based on Poly(3-hexylthiophene) Ultrathin Films. ACS APPLIED MATERIALS & INTERFACES 2022; 14:11718-11726. [PMID: 35213133 DOI: 10.1021/acsami.1c23986] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Deep ultraviolet (DUV)-light-stimulated artificial synaptic devices exhibit potential applications in various disciplines including intelligent military monitoring, biological and medical analysis, flame detection, etc. Along these lines, we report here a DUV-light-stimulated synaptic transistor fabricated on a poly(3-hexylthiophene) (P3HT) ultrathin film that responds selectively to DUV light. Significantly, our devices have the ability to successfully simulate various synapse-like behaviors including excitatory postsynaptic currents (EPSCs), paired-pulse facilitation (PPF), short-term memory (STM), long-term memory (LTM), STM-to-LTM transition, and learning and forgetting behaviors. Moreover, the proposed artificial synaptic structures were also fabricated on flexible poly(ethylene terephthalate) (PET) substrates and also successfully simulated typical synaptic behaviors, which could be of great importance for wearable applications.
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Affiliation(s)
- Longlong Jiang
- National Engineering Lab of Special Display Technology, Special Display and Imaging Technology Innovation Center of Anhui Province, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei, Anhui 230009, P. R. China
| | - Chenyin Xu
- National Engineering Lab of Special Display Technology, Special Display and Imaging Technology Innovation Center of Anhui Province, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei, Anhui 230009, P. R. China
| | - Xiaocheng Wu
- National Engineering Lab of Special Display Technology, Special Display and Imaging Technology Innovation Center of Anhui Province, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei, Anhui 230009, P. R. China
| | - Xue Zhao
- National Engineering Lab of Special Display Technology, Special Display and Imaging Technology Innovation Center of Anhui Province, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei, Anhui 230009, P. R. China
| | - Lijun Zhang
- College of Light-Textile Engineering and Art, Anhui Agricultural University, Hefei, Anhui 230036, P. R. China
| | - Guobing Zhang
- National Engineering Lab of Special Display Technology, Special Display and Imaging Technology Innovation Center of Anhui Province, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei, Anhui 230009, P. R. China
| | - Xiaohong Wang
- National Engineering Lab of Special Display Technology, Special Display and Imaging Technology Innovation Center of Anhui Province, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei, Anhui 230009, P. R. China
| | - Longzhen Qiu
- National Engineering Lab of Special Display Technology, Special Display and Imaging Technology Innovation Center of Anhui Province, Academy of Opto-Electronic Technology, and Intelligent Interconnected Systems Laboratory of Anhui, Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Opto-Electronic Engineering, Hefei University of Technology, Hefei, Anhui 230009, P. R. China
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Wang C, Zou H, Liu N, Wu ZQ. Recent Advances in Polyallenes: Preparation, Self-Assembly, and Stimuli-Responsiveness. Chem Asian J 2021; 16:3864-3872. [PMID: 34618408 DOI: 10.1002/asia.202101051] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/08/2021] [Revised: 10/06/2021] [Indexed: 11/06/2022]
Abstract
Polyallenes, as a typical type of reactive polymers, are of great significance and have aroused widespread interest because they contain double bonds that can be post-modified into other functionalities to afford varieties of functional materials. This Minireview firstly highlights the recent advances in the preparation of polyallenes, including preparation of helical polyallenes through directly polymerization of chiral allene monomers or helix-sense-selective polymerization (HSSP) of achiral allene monomers, synthesis of 1,2-regulated polyallenes and 2,3-regulated polyallenes via selective polymerization of allene monomers, polymerization of allene monomers catalyzed by Ni(II)-terminated poly(3-hexylthiophene) (P3HT), and so on. Then, latest progress on the self-assembly and stimuli-responses of polyallene-based diblock, ABA and ABC triblock copolymers is summarized. We hope this Minireview will inspire more interest in developing polyallenes and encourage further advances in functional materials.
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Affiliation(s)
- Chao Wang
- Department of Polymer Science and Engineering, School of Chemistry and Chemical Engineering, Hefei University of Technology and Anhui Key Laboratory of Advanced Catalytic Materials and Reaction Engineering, Hefei, 230009, Anhui Province, P. R. China
| | - Hui Zou
- Department of Polymer Science and Engineering, School of Chemistry and Chemical Engineering, Hefei University of Technology and Anhui Key Laboratory of Advanced Catalytic Materials and Reaction Engineering, Hefei, 230009, Anhui Province, P. R. China
| | - Na Liu
- Department of Polymer Science and Engineering, School of Chemistry and Chemical Engineering, Hefei University of Technology and Anhui Key Laboratory of Advanced Catalytic Materials and Reaction Engineering, Hefei, 230009, Anhui Province, P. R. China
| | - Zong-Quan Wu
- Department of Polymer Science and Engineering, School of Chemistry and Chemical Engineering, Hefei University of Technology and Anhui Key Laboratory of Advanced Catalytic Materials and Reaction Engineering, Hefei, 230009, Anhui Province, P. R. China
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13
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Yan Y, Chen Q, Wang X, Liu Y, Yu R, Gao C, Chen H, Guo T. Vertical Channel Inorganic/Organic Hybrid Electrochemical Phototransistors with Ultrahigh Responsivity and Fast Response Speed. ACS APPLIED MATERIALS & INTERFACES 2021; 13:7498-7509. [PMID: 33533254 DOI: 10.1021/acsami.0c20704] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Organic phototransistors (OPTs) have attracted enormous attention because of their promising applications in sensing, communication, and imaging. Currently, most OPTs reported utilize field-effect transistors (FETs) with relative long channel length which usually has undesired amplification because of their inherent low transconductance originated from their low channel capacitance, limiting the further improvement of performance. Herein, a vertical channel hybrid electrochemical phototransistor with a nanoscale channel and large transconductance (VECPT) is invented for the first time to achieve ultrahigh photoresponsivity along with a fast response speed. Benefiting from the nanoscale channel length and large transconductance, the photo-generated carriers in channel can be efficiently dissociated, transported, and amplified into the enlarged photocurrent output. Therefore, the devices deliver substantially improved optoelectronic performances with a photoresponsivity as high as ≈2.99 × 107 A/W, detectivity of ≈1.49 × 1013 Jones, and fast-speed response of ≈73 μs under a low voltage of 1 V, which are superior to those of the reported OPTs based on FETs. Moreover, the in situ Kelvin probe microscopy is performed to characterize the surface potential of device systems for better elucidating the photosensing mechanism. Furthermore, taking advantage of its excellent optoelectronic performance, an ultraviolet light monitoring system is constructed by integrating VECPT with a light-emitting diode, which also shows the real-time, high-sensitive, and controllable photoresponse threshold properties. All these results demonstrate the great potential of these electrochemical phototransistors and provide valuable insights into the design of the nanoscale channel length device system for high-performance photodetection.
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Affiliation(s)
- Yujie Yan
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350100, China
| | - Qizhen Chen
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350100, China
| | - Xiumei Wang
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350100, China
| | - Yaqian Liu
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350100, China
| | - Rengjian Yu
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350100, China
| | - Changsong Gao
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350100, China
| | - Huipeng Chen
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350100, China
| | - Tailiang Guo
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350100, China
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14
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Chen Q, Lai D, He L, Li E, Liu Y, Zeng H, Chen H, Guo T. High-Performance Vertical Organic Phototransistors Enhanced by Ferroelectrics. ACS APPLIED MATERIALS & INTERFACES 2021; 13:1035-1042. [PMID: 33378165 DOI: 10.1021/acsami.0c18281] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Organic phototransistors with high sensitivity and responsivity to light irradiance have great potential applications in national defense, meteorology, industrial manufacturing, and medical security. However, undesired dark current and photoresponsivity limit their practical applications. Here, a novel vertical organic phototransistor combined with ferroelectric materials is developed. The device structure has nanometer channel length, which can effectively separate photogenerated carriers and reduce the probability of carrier recombination and defect scattering, thus improving the device performance of phototransistors. Moreover, by inserting the poly(vinylidene fluoride-co-trifluoroethylene) (P(VDF-TrFE)) ferroelectric layer, the Schottky barrier at the interface between the semiconductor and source can be adjusted by the polarization of the external electric field, which can effectively reduce the dark current of the phototransistor to further improve the device performance. Therefore, our phototransistors exhibit a high photoresponsivity of more than 5.7 × 105A/W, an outstanding detectivity of 1.15 × 1018 Jones, and an excellent photosensitivity of 5 × 107 under 760 nm light illumination, which are better than those of conventional lateral organic phototransistors. This work provides a new approach for the development of high-performance phototransistors, which opens a new pathway for organic phototransistors in practical application.
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Affiliation(s)
- Qizhen Chen
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
| | - Dengxiao Lai
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
| | - Lihua He
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
| | - Enlong Li
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
| | - Yaqian Liu
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
| | - Huaan Zeng
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
| | - Huipeng Chen
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350100, China
| | - Tailiang Guo
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350100, China
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