Ultraheavy and Ultrarelativistic Dirac Quasiparticles in Sandwiched Graphenes

The influence of interlayer bias and crystal field on the electronic characteristics of twisted tri-layer graphene

Twisted van der Waals multilayers have proven to be highly effective in solid-state systems, facilitating the emergence of unique quantum behaviors. By utilizing a real-space tight-binding model, we demonstrate that in twisted trilayer graphene (t-TLG), both localized and dispersive modes can be significantly altered through adjustments in the interlayer bias and crystal field. Interestingly, the interlayer bias results in Dirac crossings above and below the charge neutrality point, alongside several anti-crossings. In contrast, the crystal field creates asymmetry between the inner and outer layers by applying differing electrostatic potentials, which in turn inherently induces an interlayer bias. Our findings indicate that an accurate prediction of the electronic characteristics of t-TLG requires accounting for the effects of both interlayer bias and crystal fields.

Imaging inter-valley coherent order in magic-angle twisted trilayer graphene

Magic-angle twisted trilayer graphene (MATTG) exhibits a range of strongly correlated electronic phases that spontaneously break its underlying symmetries1,2. Here we investigate the correlated phases of MATTG using scanning tunnelling microscopy and identify marked signatures of interaction-driven spatial symmetry breaking. In low-strain samples, over a filling range of about two to three electrons or holes per moiré unit cell, we observe atomic-scale reconstruction of the graphene lattice that accompanies a correlated gap in the tunnelling spectrum. This short-scale restructuring appears as a Kekulé supercell-implying spontaneous inter-valley coherence between electrons-and persists in a wide range of magnetic fields and temperatures that coincide with the development of the gap. Large-scale maps covering several moiré unit cells further reveal a slow evolution of the Kekulé pattern, indicating that atomic-scale reconstruction coexists with translation symmetry breaking at a much longer moiré scale. We use auto-correlation and Fourier analyses to extract the intrinsic periodicity of these phases and find that they are consistent with the theoretically proposed incommensurate Kekulé spiral order3,4. Moreover, we find that the wavelength characterizing moiré-scale modulations monotonically decreases with hole doping away from half-filling of the bands and depends weakly on the magnetic field. Our results provide essential insights into the nature of the correlated phases of MATTG in the presence of strain and indicate that superconductivity can emerge from an inter-valley coherent parent state.

Magic-angle helical trilayer graphene

We propose magic-angle helical trilayer graphene (HTG), a helical structure featuring identical rotation angles between three consecutive layers of graphene, as a unique and experimentally accessible platform for realizing exotic correlated topological states of matter. While nominally forming a supermoiré (or moiré-of-moiré) structure, we show that HTG locally relaxes into large regions of a periodic single-moiré structure realizing flat topological bands carrying nontrivial valley Chern number. These bands feature near-ideal quantum geometry and are isolated from remote bands by a very large energy gap, making HTG a promising platform for experimental realization of correlated topological states such as integer and fractional quantum anomalous Hall states.

Modulations in Superconductors: Probes of Underlying Physics

The importance of modulations is elevated to an unprecedented level, due to the delicate conditions required to bring out exotic phenomena in quantum materials, such as topological materials, magnetic materials, and superconductors. Recently, state-of-the-art modulation techniques in material science, such as electric-double-layer transistor, piezoelectric-based strain apparatus, angle twisting, and nanofabrication, have been utilized in superconductors. They not only efficiently increase the tuning capability to the broader ranges but also extend the tuning dimensionality to unprecedented degrees of freedom, including quantum fluctuations of competing phases, electronic correlation, and phase coherence essential to global superconductivity. Here, for a comprehensive review, these techniques together with the established modulation methods, such as elemental substitution, annealing, and polarization-induced gating, are contextualized. Depending on the mechanism of each method, the modulations are categorized into stoichiometric manipulation, electrostatic gating, mechanical modulation, and geometrical design. Their recent advances are highlighted by applications in newly discovered superconductors, e.g., nickelates, Kagome metals, and magic-angle graphene. Overall, the review is to provide systematic modulations in emergent superconductors and serve as the coordinate for future investigations, which can stimulate researchers in superconductivity and other fields to perform various modulations toward a thorough understanding of quantum materials.

Ising superconductivity induced from spin-selective valley symmetry breaking in twisted trilayer graphene

We show that the e-e interaction induces a strong breakdown of valley symmetry for each spin channel in twisted trilayer graphene, leading to a ground state where the two spin projections have opposite sign of the valley symmetry breaking order parameter. This leads to a spin-valley locking in which the electrons of a Cooper pair are forced to live on different Fermi lines attached to opposite valleys. Furthermore, we find an effective intrinsic spin-orbit coupling explaining the protection of the superconductivity against in-plane magnetic fields. The effect of spin-selective valley symmetry breaking is validated as it reproduces the experimental observation of the reset of the Hall density at 2-hole doping. It also implies a breakdown of the symmetry of the bands from C₆ to C₃, with an enhancement of the anisotropy of the Fermi lines which is at the origin of a Kohn-Luttinger (pairing) instability. The isotropy of the bands is gradually recovered, however, when the Fermi level approaches the bottom of the second valence band, explaining why the superconductivity fades away in the doping range beyond 3 holes per moiré unit cell in twisted trilayer graphene.

Chiral Decomposition of Twisted Graphene Multilayers with Arbitrary Stacking

We formulate the chiral decomposition rules that govern the electronic structure of a broad family of twisted N + M multilayer graphene configurations that combine arbitrary stacking order and a mutual twist. We show that at the magic angle in the chiral limit the low-energy bands of such systems are composed of chiral pseudospin doublets that are energetically entangled with two flat bands per valley induced by the moiré superlattice potential. The analytic construction is supported by explicit numerical calculations based on realistic parametrization. We further show that vertical displacement fields can open energy gaps between the pseudospin doublets and the two flat bands, such that the flat bands may carry nonzero valley Chern numbers. These results provide guidelines for the rational design of topological and correlated states in generic twisted graphene multilayers.

Dirac spectroscopy of strongly correlated phases in twisted trilayer graphene

Magic-angle twisted trilayer graphene (MATTG) hosts flat electronic bands, and exhibits correlated quantum phases with electrical tunability. In this work, we demonstrate a spectroscopy technique that allows for dissociation of intertwined bands and quantification of the energy gaps and Chern numbers C of the correlated states in MATTG by driving band crossings between Dirac cone Landau levels and energy gaps in the flat bands. We uncover hard correlated gaps with C = 0 at integer moiré unit cell fillings of ν = 2 and 3 and reveal charge density wave states originating from van Hove singularities at fractional fillings ν = 5/3 and 11/3. In addition, we demonstrate displacement-field-driven first-order phase transitions at charge neutrality and ν = 2, which are consistent with a theoretical strong-coupling analysis, implying C₂T symmetry breaking. Overall, these properties establish a diverse electrically tunable phase diagram of MATTG and provide an avenue for investigating other related systems hosting both steep and flat bands.

Massive and massless plasmons in germanene nanosheets

Atomically thin crystals may exhibit peculiar dispersive electronic states equivalent to free charged particles of ultralight to ultraheavy masses. A rare coexistence of linear and parabolic dispersions yields correlated charge density modes exploitable for nanometric light confinement. Here, we use a time-dependent density-functional approach, under several levels of increasing accuracy, from the random-phase approximation to the Bethe-Salpeter equation formalism, to assess the role of different synthesized germanene samples as platforms for these plasmon excitations. In particular, we establish that both freestanding and some supported germenene monolayers can sustain infrared massless modes, resolved into an out-of-phase (optical) and an in-phase (acoustic) component. We further indicate precise experimental geometries that naturally host infrared massive modes, involving two different families of parabolic charge carriers. We thus show that the interplay of the massless and massive plasmons can be finetuned by applied extrinsic conditions or geometry deformations, which constitutes the core mechanism of germanene-based optoelectronic and plasmonic applications.

Observation of Coexisting Dirac Bands and Moiré Flat Bands in Magic-Angle Twisted Trilayer Graphene

Moiré superlattices that consist of two or more layers of 2D materials stacked together with a small twist angle have emerged as a tunable platform to realize various correlated and topological phases, such as Mott insulators, unconventional superconductivity, and quantum anomalous Hall effect. Recently, magic-angle twisted trilayer graphene (MATTG) has shown both robust superconductivity similar to magic-angle twisted bilayer graphene and other unique properties, including the Pauli-limit violating and re-entrant superconductivity. These rich properties are deeply rooted in its electronic structure under the influence of distinct moiré potential and mirror symmetry. Here, combining nanometer-scale spatially resolved angle-resolved photoemission spectroscopy and scanning tunneling microscopy/spectroscopy, the as-yet unexplored band structure of MATTG near charge neutrality is systematically measured. These measurements reveal the coexistence of the distinct dispersive Dirac band with the emergent moiré flat band, showing nice agreement with the theoretical calculations. These results serve as a stepstone for further understanding of the unconventional superconductivity in MATTG.

Promotion of superconductivity in magic-angle graphene multilayers

Graphene moiré superlattices show an abundance of correlated insulating, topological, and superconducting phases. Whereas the origins of strong correlations and nontrivial topology can be directly linked to flat bands, the nature of superconductivity remains enigmatic. We demonstrate that magic-angle devices made of twisted tri-, quadri-, and pentalayer graphene placed on monolayer tungsten diselenide exhibit flavor polarization and superconductivity. We also observe insulating states in the tril- and quadrilayer arising at finite electric displacement fields. As the number of layers increases, superconductivity emerges over an enhanced filling-factor range, and in the pentalayer it extends well beyond the filling of four electrons per moiré unit cell. Our results highlight the role of the interplay between flat and more dispersive bands in extending superconducting regions in graphene moiré superlattices.

Evidence for unconventional superconductivity in twisted trilayer graphene

Magic-angle twisted trilayer graphene (MATTG) has emerged as a moiré material that exhibits strong electronic correlations and unconventional superconductivity^1,2. However, local spectroscopic studies of this system are still lacking. Here we perform high-resolution scanning tunnelling microscopy and spectroscopy of MATTG that reveal extensive regions of atomic reconstruction favouring mirror-symmetric stacking. In these regions, we observe symmetry-breaking electronic transitions and doping-dependent band-structure deformations similar to those in magic-angle bilayers, as expected theoretically given the commonality of flat bands^3,4. Most notably in a density window spanning two to three holes per moiré unit cell, the spectroscopic signatures of superconductivity are manifest as pronounced dips in the tunnelling conductance at the Fermi level accompanied by coherence peaks that become gradually suppressed at elevated temperatures and magnetic fields. The observed evolution of the conductance with doping is consistent with a gate-tunable transition from a gapped superconductor to a nodal superconductor, which is theoretically compatible with a sharp transition from a Bardeen-Cooper-Schrieffer superconductor to a Bose-Einstein-condensation superconductor with a nodal order parameter. Within this doping window, we also detect peak-dip-hump structures that suggest that superconductivity is driven by strong coupling to bosonic modes of MATTG. Our results will enable further understanding of superconductivity and correlated states in graphene-based moiré structures beyond twisted bilayers⁵.

Orderly disorder in magic-angle twisted trilayer graphene

Magic-angle twisted trilayer graphene (TTG) has recently emerged as a platform to engineer strongly correlated flat bands. We reveal the normal-state structural and electronic properties of TTG using low-temperature scanning tunneling microscopy at twist angles for which superconductivity has been observed. Real trilayer samples undergo a strong reconstruction of the moiré lattice, which locks layers into near-magic-angle, mirror symmetric domains comparable in size with the superconducting coherence length. This relaxation introduces an array of localized twist-angle faults, termed twistons and moiré solitons, whose electronic structure deviates strongly from the background regions, leading to a doping-dependent, spatially granular electronic landscape. The Fermi-level density of states is maximally uniform at dopings for which superconductivity has been observed in transport measurements.

Wafer-Scale Programmed Assembly of One-Atom-Thick Crystals

Crystalline films offer various physical properties based on the modulation of their thicknesses and atomic structures. The layer-by-layer assembly of atomically thin crystals provides a powerful means to arbitrarily design films at the atomic level, which are unattainable with existing growth technologies. However, atomically clean assembly of the materials with high scalability and reproducibility remains challenging. We report programmed crystal assembly of graphene and monolayer hexagonal boron nitride, assisted by van der Waals interactions, to form wafer-scale films of pristine interfaces with near-unity yield. The atomic configurations of the films are tailored with layer-resolved compositions and in-plane crystalline orientations. We demonstrate batch-fabricated tunnel device arrays with modulation of the resistance over orders of magnitude by thickness control of the hexagonal boron nitride barrier with single-atom precision and large-scale, twisted multilayer graphene with programmable electronic band structures and crystal symmetries. Our results constitute an important development in the artificial design of large-scale films.

Dichotomy of Electron-Phonon Coupling in Graphene Moiré Flat Bands

Graphene moiré superlattices are outstanding platforms to study correlated electron physics and superconductivity with exceptional tunability. However, robust superconductivity has been measured only in magic-angle twisted bilayer graphene (MA-TBG) and magic-angle twisted trilayer graphene (MA-TTG). The absence of a superconducting phase in certain moiré flat bands raises a question on the superconducting mechanism. In this work, we investigate electronic structure and electron-phonon coupling in graphene moiré superlattices based on atomistic calculations. We show that electron-phonon coupling strength λ is dramatically different among graphene moiré flat bands. The total strength λ is very large (λ>1) for MA-TBG and MA-TTG, both of which display robust superconductivity in experiments. However, λ is an order of magnitude smaller in twisted double bilayer graphene (TDBG) and twisted monolayer-bilayer graphene (TMBG) where superconductivity is reportedly rather weak or absent. We find that the Bernal-stacked layers in TDBG and TMBG induce sublattice polarization in the flat-band states, suppressing intersublattice electron-phonon matrix elements. We also obtain the nonadiabatic superconducting transition temperature T_{c} that matches well with the experimental results. Our results clearly show a correlation between strong electron-phonon coupling and experimental observations of robust superconductivity.

Correlated Insulating States and Transport Signature of Superconductivity in Twisted Trilayer Graphene Superlattices

Layers of two-dimensional materials stacked with a small twist angle give rise to beating periodic patterns on a scale much larger than the original lattice, referred to as a "moiré superlattice." Here, we demonstrate a higher-order "moiré of moiré" superlattice in twisted trilayer graphene with two consecutive small twist angles. We report correlated insulating states near the half filling of the moiré of moiré superlattice at an extremely low carrier density (∼10^{10}  cm^{-2}), near which we also report a zero-resistance transport behavior typically expected in a 2D superconductor. The full-occupancy (ν=-4 and ν=4) states are semimetallic and gapless, distinct from the twisted bilayer systems.

Engineering Three-Dimensional Moiré Flat Bands

Twisting two adjacent layers of van der Waals materials with respect to each other can lead to flat two-dimensional electronic bands which enables a wealth of physical phenomena. Here, we generalize this concept of so-called moiré flat bands to engineer flat bands in all three spatial dimensions controlled by the twist angle. The basic concept is to stack the material such that the large spatial moiré interference patterns are spatially shifted from one twisted layer to the next. We exemplify the general concept by considering graphitic systems, boron nitride, and WSe2, but the approach is applicable to any two-dimensional van der Waals material. For hexagonal boron nitride, we develop an ab initio fitted tight binding model that captures the corresponding three-dimensional low-energy electronic structure. We outline that interesting three-dimensional correlated phases of matter can be induced and controlled following this route, including quantum magnets and unconventional superconducting states.

In-Plane Critical Magnetic Fields in Magic-Angle Twisted Trilayer Graphene

It has recently been shown [Y. Cao, J. M. Park, K. Watanabe, T. Taniguchi, and P. Jarillo-Herrero, Pauli-limit violation and re-entrant superconductivity in moiré graphene, Nature (London) 595, 526 (2021).NATUAS0028-0836] that superconductivity in magic-angle twisted trilayer graphene survives to in-plane magnetic fields that are well in excess of the Pauli limit, and much stronger than the in-plane critical magnetic fields of magic-angle twisted bilayer graphene. The difference is surprising because twisted bilayers and trilayers both support the magic-angle flat bands thought to be the fountainhead of twisted graphene superconductivity. We show here that the difference in critical magnetic fields can be traced to a C_{2}M_{h} symmetry in trilayers that survives in-plane magnetic fields, and also relative displacements between top and bottom layers that are not under experimental control at present. An gate electric field breaks the C_{2}M_{h} symmetry and therefore limits the in-plane critical magnetic field.

Pauli-limit violation and re-entrant superconductivity in moiré graphene

Moiré quantum matter has emerged as a materials platform in which correlated and topological phases can be explored with unprecedented control. Among them, magic-angle systems constructed from two or three layers of graphene have shown robust superconducting phases with unconventional characteristics^1-5. However, direct evidence of unconventional pairing remains to be experimentally demonstrated. Here we show that magic-angle twisted trilayer graphene exhibits superconductivity up to in-plane magnetic fields in excess of 10 T, which represents a large (2-3 times) violation of the Pauli limit for conventional spin-singlet superconductors^6,7. This is an unexpected observation for a system that is not predicted to have strong spin-orbit coupling. The Pauli-limit violation is observed over the entire superconducting phase, which indicates that it is not related to a possible pseudogap phase with large superconducting amplitude pairing. Notably, we observe re-entrant superconductivity at large magnetic fields, which is present over a narrower range of carrier densities and displacement fields. These findings suggest that the superconductivity in magic-angle twisted trilayer graphene is likely to be driven by a mechanism that results in non-spin-singlet Cooper pairs, and that the external magnetic field can cause transitions between phases with potentially different order parameters. Our results demonstrate the richness of moiré superconductivity and could lead to the design of next-generation exotic quantum matter.

Emulating Heavy Fermions in Twisted Trilayer Graphene

Twisted van der Waals materials have been shown to host a variety of tunable electronic structures. Here we put forward twisted trilayer graphene (TTG) as a platform to emulate heavy fermion physics. We demonstrate that TTG hosts extended and localized modes with an electronic structure that can be controlled by interlayer bias. In the presence of interactions, the existence of localized modes leads to the development of local moments, which are Kondo coupled to coexisting extended states. By electrically controlling the effective exchange between local moments, the system can be driven from a magnetic into a heavy fermion regime, passing through a quantum critical point, allowing one to electrically explore a generalized Doniach phase diagram. Our results put forward twisted graphene multilayers as a platform for the realization of strongly correlated heavy fermion physics in a purely carbon-based platform.

Electronic Raman Scattering in Twistronic Few-Layer Graphene

We study electronic contribution to the Raman scattering signals of two-, three- and four-layer graphene with layers at one of the interfaces twisted by a small angle with respect to each other. We find that the Raman spectra of these systems feature two peaks produced by van Hove singularities in moiré minibands of twistronic graphene, one related to direct hybridization of the Dirac states, and the other resulting from band folding caused by moiré superlattice. The positions of both peaks strongly depend on the twist angle, so that their detection can be used for noninvasive characterization of the twist, even in hBN-encapsulated structures.

Twisted Trilayer Graphene: A Precisely Tunable Platform for Correlated Electrons

We introduce twisted trilayer graphene (tTLG) with two independent twist angles as an ideal system for the precise tuning of the electronic interlayer coupling to maximize the effect of correlated behaviors. As established by experiment and theory in the related twisted bilayer graphene system, van Hove singularities (VHS) in the density of states can be used as a proxy of the tendency for correlated behaviors. To explore the evolution of VHS in the twist-angle phase space of tTLG, we present a general low-energy electronic structure model for any pair of twist angles. We show that the basis of the model has infinite dimensions even at a finite energy cutoff and that no Brillouin zone exists even in the continuum limit. Using this model, we demonstrate that the tTLG system exhibits a wide range of magic angles at which VHS merge and that the density of states has a sharp peak at the charge-neutrality point through two distinct mechanisms: the incommensurate perturbation of twisted bilayer graphene's flatbands or the equal hybridization between two bilayer moiré superlattices.

LAN: A Materials Notation for Two-Dimensional Layered Assemblies

Two-dimensional (2D) layered materials offer intriguing possibilities for novel physics and applications. Before any attempt at exploring the materials space in a systematic fashion, or combining insights from theory, computation, and experiment, a formal description of information about an assembly of arbitrary composition is required. Here, we introduce a domain-generic notation that is used to describe the space of 2D layered materials from monolayers to twisted assemblies of arbitrary composition, existent or not yet fabricated. The notation corresponds to a theoretical materials concept of stepwise assembly of layered structures using a sequence of rotation, vertical stacking, and other operations on individual 2D layers. Its scope is demonstrated with a number of example structures using common single-layer materials as building blocks. This work overall aims to contribute to the systematic codification, capture, and transfer of materials knowledge in the area of 2D layered materials.