Interface Engineering-Assisted 3D-Graphene/Germanium Heterojunction for High-Performance Photodetectors

Enhanced response of an infrared photodetector based on hybridization between reduced graphene oxide and up-conversion microparticles

Infrared (IR) photodetectors play an important role in many fields such as industry, medicine, security, etc. Achieving high response and maintaining stability in the device performance while reducing materials cost are required for the practical use of optical sensors. This study presents the development of a low-cost but high-performance IR photodetector based on a hybridization of up-conversion microparticles of NaYF4:Tm,Yb (UCMPs) and reduced graphene oxide material (RGO). In this combination, UCMPs play the role of absorbing photons from 980 nm excitation light, generating electron-hole pairs, which are useful for sensing applications. Meanwhile, RGO acts as a charge collector or a charge transport layer because of its high mobility, good electro-conductivity, and large surface area. Through various characterization experiments in dark and light conditions, the analysis results confirm that our devices show sensitivity to IR light with excellent operation stability up to 30 days even stored in ambient conditions. Overall, the combination of UCMPs and RGO materials promises to increase the ability to absorb infrared light, the optical sensitivity of the photodetector.

Optical Properties of Graphene Nanoplatelets on Amorphous Germanium Substrates

In this work, the integration of graphene nanoplatelets (GNPs) with amorphous germanium (Ge) substrates is explored. The optical properties were characterized using Variable-Angle Spectroscopic Ellipsometry (VASE). The findings of this study reveal a strong interaction between GNPs and amorphous germanium, indicated by a significant optical absorption. This interaction suggests a change in the electronic structure of the GNPs, implying that amorphous germanium could enhance their effectiveness in devices such as optical sensors, photodetectors, and solar cells. Herein, the use of amorphous germanium as a substrate for GNPs, which notably increases their refractive index and extinction coefficient, is introduced for the first time. By exploring this unique material combination, this study provides new insights into the interaction between GNPs and amorphous substrates, paving the way for the develop of high-performance, scalable optoelectronic devices with enhanced efficiency.

Nitrogen-Doped 3D-Graphene Advances Near-Infrared Photodetector for Logic Circuits and Image Sensors Overcoming 2D Limitations

The limitations of two-dimensional (2D) graphene in broadband photodetector are overcome by integrating nitrogen (N) doping into three-dimensional (3D) structures within silicon (Si) via plasma-assisted chemical vapor deposition (PACVD) technology. This contributes to the construction of vertical Schottky heterojunction broad-spectrum photodetectors and applications in logic devices and image sensors. The natural nanoscale resonant cavity structure of 3D-graphene enhances photon capture efficiency, thereby increasing photocarrier generation. N-doping can fine-tune the electronic structure, advancing the Schottky barrier height and reducing dark current. The as-fabricated photodetector exhibits exceptional self-driven photoresponse, especially at 1550 nm, with an excellent photoresponsivity (79.6 A/W), specific detectivity (1013 Jones), and rapid response of 130 μs. Moreover, it enables logic circuits, high-resolution pattern image recognition, and broadband spectra recording across the visible to near-infrared range (400-1550 nm). This research will provide new views and technical support for the development and widespread application of high-performance semiconductor-based graphene broadband detectors.

Highly Efficient Photon Energy Conversion and Ultrasensitive Self-Powered Photodetection via a Monolithic p-3C-SiC Nanothin Film on p-Si/n-Si Double Junction

The pursuit of increased efficiency of photoelectric energy conversion through optimized semiconductor structures remains highly competitive, with current results yet to align with broad expectations. In this study, we discover a significant enhancement in photocurrent performance of a p-3C-SiC nanothin film on p-Si/n-Si double junction (DJ) heterostructure that integrates p-3C-SiC/p-Si heterojunction and p-Si/n-Si homojunction. The vertical photocurrent (VPC) and vertical photoresponsivity exhibit a substantial enhancement in the DJ heterostructure, surpassing by a maximum of 43-fold compared to the p-3C-SiC/n-Si single junction (SJ) counterpart. The p-3C-SiC layer and n-Si substrate of the two heterostructures have similar material and geometrical properties. More importantly, the fabrication costs for the DJ and SJ heterostructure devices are comparable. Our results demonstrate a significant potential for using DJ devices in energy harvesters, micro/nano electromechanical systems, and sensing applications. This research may also lead to the creation of advanced optoelectronic devices using DJ structures, where employing various semiconductor materials to achieve exceptional performance through the application of the concept and theoretical model described in this work.

Graphene nanowalls in photodetectors

Graphene nanowalls (GNWs) have emerged as a promising material in the field of photodetection, thanks to their exceptional optical, electrical, mechanical, and thermodynamic properties. However, the lack of a comprehensive review in this domain hinders the understanding of GNWs' development and potential applications. This review aims to provide a systematic summary and analysis of the current research status and challenges in GNW-based photodetectors. We begin by outlining the growth mechanisms and methods of GNWs, followed by a discussion on their physical properties. Next, we categorize and analyze the latest research progress in GNW photodetectors, focusing on photovoltaic, photoconductive, and photothermal detectors. Lastly, we offer a summary and outlook, identifying potential challenges and outlining industry development directions. This review serves as a valuable reference for researchers and industry professionals in understanding and exploring the opportunities of GNW materials in photodetection.

High-performance gold/graphene/germanium photodetector based on a graphene-on-germanium wafer

The metal/germanium (Ge) photodetectors have attracted much attention for their potential applications in on-chip optoelectronics. One critical issue is the relatively large dark current due to the limited Schottky potential barrier height of the metal/germanium junction, which is mainly caused by the small bandgap of Ge and the Fermi energy level pinning effect between the metal and Ge. The main technique to solve this problem is to insert a thin interlayer between the metal and Ge. However, so far, the dark current of the photodetectors is still large when using a bulk-material insertion layer, while when using a two-dimensional insertion layer, the area of the insertion layer is too small to support a mass production. Here, we report a gold/graphene/germanium photodetector with a wafer-scale graphene insertion layer using a 4 inch graphene-on-germanium wafer. The insertion layer significantly increases the potential barrier height, leading to a dark current as low as 1.6 mA cm^-2, and a responsivity of 1.82 A W^-1which are the best results for metal/Ge photodetectors reported so far. Our work contributes to the mass production of high-performance metal/Ge photodetectors.

Influence of metal-semiconductor junction on the performances of mixed-dimensional MoS2/Ge heterostructure avalanche photodetector

The two-dimensional/three-dimensional van der Waals heterostructures provide novel optoelectronic properties for the next-generation of information devices. Herein, MoS₂/Ge heterojunction avalanche photodetectors are readily obtained. The device with an Ag electrode at MoS₂ side exhibits more stable rectification characteristics than that with an Au electrode. The rectification radio greater than 10³ and a significant avalanche breakdown are observed in the device. The responsivity of 170 and 4 A/W and the maximum gain of 320 and 13 are obtained under 532 and 1550 nm illumination, respectively. Such photoelectric properties are attributed to the carrier multiplication at a Ge/MoS₂ junction due to an avalanche breakdown. The mechanism is confirmed by the Sentaurus TCAD-simulated I-V characteristics.

Investigation of a Highly Sensitive Surface-Enhanced Raman Scattering Substrate Formed by a Three-Dimensional/Two-Dimensional Graphene/Germanium Heterostructure

Three-dimensional graphene (3D-graphene) is used in surface-enhanced Raman spectroscopy (SERS) because of its plasmonic nanoresonator structure and good ability to interact with light. However, a thin (3-5 nm) layer of amorphous carbon (AC) inevitably appears as a template layer between the 3D-graphene and object substrate when the 3D-graphene layer is synthesized, weakening the enhancement factor. Herein, two-dimensional graphene (2D-graphene) is employed as a template layer to directly synthesize 3D-graphene on a germanium (Ge) substrate via plasma-assisted chemical vapor deposition, bypassing the formation of an AC layer. The interaction and photoinduced charge transfer ability of the 3D-graphene/Ge heterojunction with incident light are improved. Moreover, the high density of electronic states close to the Fermi level of the heterojunction induces the adsorbed probe molecules to efficiently couple to the 3D-graphene-based SERS substrate. Our experimental results imply that the lowest concentrations of rhodamine 6G and rhodamine B that can be detected on the 3D/2D-graphene/Ge SERS substrate correspond to 10^-10 M; for methylene blue, it is 10^-8 M. The detection limits of the 3D/2D-graphene/Ge SERS substrate with respect to 3-hydroxytyramine hydrochloride and melamine (in milk) are both less than 1 ppm. This work may provide a viable and convenient alternative method for preparing 3D-graphene SERS substrates. It also constitutes a new approach to developing SERS substrates with remarkable performance levels.

High-Performance 3D Vertically Oriented Graphene Photodetector Using a Floating Indium Tin Oxide Channel

Vertically oriented graphene (VG), owing to its sharp edges, non-stacking morphology, and high surface-to-volume ratio structure, is promising as a consummate material for the application of photoelectric detection. However, owing to high defect and fast photocarrier recombination, VG-absorption-based detectors inherently suffer from poor responsivity, severely limiting their viability for light detection. Herein, we report a high-performance photodetector based on a VG/indium tin oxide (ITO) composite structure, where the VG layer serves as the light absorption layer while ITO works as the carrier conduction channel, thus achieving the broadband and high response nature of a photodetector. Under the illumination of infrared light, photoinduced carriers generated in VG could transfer to the floating ITO layer, which makes them separate and diffuse to electrodes quickly, finally realizing large photocurrent detectivity. This kind of composite structure photodetector possesses a room temperature photoresponsivity as high as ~0.7 A/W at a wavelength of 980 nm, and it still maintains an acceptable performance at temperatures as low as 87 K. In addition, a response time of 5.8 s is observed, ~10 s faster than VG photodetectors. Owing to the unique three-dimensional morphology structure of the as-prepared VG, the photoresponsivity of the VG/ITO composite photodetector also presented selectivity of incidence angles. These findings demonstrate that our novel composite structure VG device is attractive and promising in highly sensitive, fast, and broadband photodetection technology.

Structural and Dipole-Relaxation Processes in Epoxy-Multilayer Graphene Composites with Low Filler Content

Multilayered graphene nanoplatelets (MLGs) were prepared from thermally expanded graphite flakes using an electrochemical technique. Morphological characterization of MLGs was performed using scanning electron microscopy (SEM), X-ray diffraction analysis (XRD), Raman spectroscopy (RS), and the Brunauer-Emmett-Teller (BET) method. DGEBA-epoxy-based nanocomposites filled with synthesized MLGs were studied using Static Mechanical Loading (SML), Thermal Desorption Mass Spectroscopy (TDMS), Broad-Band Dielectric Spectroscopy (BDS), and Positron Annihilation Lifetime Spectroscopy (PALS). The mass loading of the MLGs in the nanocomposites was varied between 0.0, 0.1, 0.2, 0.5, and 1% in the case of the SML study and 0.0, 1.0, 2, and 5% for the other measurements. Enhancements in the compression strength and the Young's modulus were obtained at extremely low loadings (C≤ 0.01%). An essential increase in thermal stability and a decrease in destruction activation energy were observed at C≤ 5%. Both the dielectric permittivity (ε1) and the dielectric loss factor (ε2) increased with increasing C over the entire frequency region tested (4 Hz-8 MHz). Increased ε2 is correlated with decreased free volume when increasing C. Physical mechanisms of MLG-epoxy interactions underlying the effects observed are discussed.

Construction of PtSe2/Ge heterostructure-based short-wavelength infrared photodetector array for image sensing and optical communication applications

In this work, we present the construction of a multilayered PtSe2/Ge heterostructure-based photodetector array comprising 1 × 10 device units operating in the short-wavelength infrared (SWIR) spectrum region. The as-fabricated heterostructures show an obvious photovoltaic effect, providing the devices with the ability to work as self-driven photodetectors. Upon 1550 nm illumination, a typical photodetector exhibits prominent photoresponse performance with the current on/off ratio, responsivity, external quantum efficiency and specific detectivity reaching 1.08 × 103, 766 mA W-1, 61.3% and 1.1 × 1011 Jones, respectively. The device also has a fast response speed with rise/fall times of 54.9 μs/56.6 μs. Thanks to the respectable homogeneity in device performance, the photodetector array can reliably record an image of a "diode symbol" produced by SWIR irradiation. What is more, the photodetector is successfully integrated into a SWIR optical communication system serving as an optical receiver to transmit a text signal. The above results imply a huge possibility of the present heterostructure-based photodetector array for some optoelectronic purposes such as SWIR image sensing and optical communication applications.

Interface Engineering of a Silicon/Graphene Heterojunction Photodetector via a Diamond-Like Carbon Interlayer

Silicon/graphene nanowalls (Si/GNWs) heterojunctions with excellent integrability and sensitivity show an increasing potential in optoelectronic devices. However, the performance is greatly limited by inferior interfacial adhesion and week electronic transport caused by the horizontal buffer layer. Herein, a diamond-like carbon (DLC) interlayer is first introduced to construct Si/DLC/GNWs heterojunctions, which can significantly change the growth behavior of the GNWs film, avoiding the formation of horizontal buffer layers. Accordingly, a robust diamond-like covalent bond with a remarkable enhancement of the interfacial adhesion is yielded, which notably improves the complementary metal oxide semiconductor compatibility for photodetector fabrication. Importantly, the DLC interlayer is verified to undergo a graphitization transition during the high-temperature growth process, which is beneficial to pave a vertical conductive path and facilitate the transport of photogenerated carriers in the visible and near-infrared regions. As a result, the Si/DLC/GNWs heterojunction detectors can simultaneously exhibit improved photoresponsivity and response speed, compared with the counterparts without DLC interlayers. The introduction of the DLC interlayer might provide a universal strategy to construct hybrid interfaces with high performance in next-generation optoelectronic devices.