Enhanced Piezoresistive Behavior of SiC Nanowire by Coupling with Piezoelectric Effect

Influence of the Tensile Strain on Electron Transport of Ultra-Thin SiC Nanowires

The influence of nanomechanical tensile behavior on electron transport is especially interesting for ultra-thin SiC nanowires (NWs) with different diameters. Our studies theoretically show that these NWs can hold stable electron transmission in some strain ranges and that stretching can enhance the electron transmission around the Fermi level (EF) at the strains over 0.5 without fracture for a single-atom SiC chain and at the strains not over 0.5 for thicker SiC NWs. For each size of SiC NW, the tensile strain has a tiny effect on the number of device density of states (DDOSs) peaks but can increase the values. Freshly broken SiC NWs also show certain values of DDOSs around EF. The maximum DDOS increases significantly with the diameter, but interestingly, the DDOS at EF shows little difference among the three sizes of devices in the late stage of the stretching. Essentially, high electron transmission is influenced by high DDOSs and delocalized electronic states. Analysis of electron localization functions (ELFs) indicates that appropriate tensile stress can promote continuous electronic distributions to contribute electron transport, while excessively large stretching deformation of SiC NWs would split electronic distributions and consequently hinder the movement of electrons. These results provide strong theoretical support for the use of ultra-thin SiC NWs in nano-sensors for functional and controllable electronic devices.

Fundamentals and Applications of ZnO-Nanowire-Based Piezotronics and Piezo-Phototronics

The piezotronic effect is a coupling effect of semiconductor and piezoelectric properties. The piezoelectric potential is used to adjust the p-n junction barrier width and Schottky barrier height to control carrier transportation. At present, it has been applied in the fields of sensors, human-machine interaction, and active flexible electronic devices. The piezo-phototronic effect is a three-field coupling effect of semiconductor, photoexcitation, and piezoelectric properties. The piezoelectric potential generated by the applied strain in the piezoelectric semiconductor controls the generation, transport, separation, and recombination of carriers at the metal-semiconductor contact or p-n junction interface, thereby improving optoelectronic devices performance, such as photodetectors, solar cells, and light-emitting diodes (LED). Since then, the piezotronics and piezo-phototronic effects have attracted vast research interest due to their ability to remarkably enhance the performance of electronic and optoelectronic devices. Meanwhile, ZnO has become an ideal material for studying the piezotronic and piezo-phototronic effects due to its simple preparation process and better biocompatibility. In this review, first, the preparation methods and structural characteristics of ZnO nanowires (NWs) with different doping types were summarized. Then, the theoretical basis of the piezotronic effect and its application in the fields of sensors, biochemistry, energy harvesting, and logic operations (based on piezoelectric transistors) were reviewed. Next, the piezo-phototronic effect in the performance of photodetectors, solar cells, and LEDs was also summarized and analyzed. In addition, modulation of the piezotronic and piezo-phototronic effects was compared and summarized for different materials, structural designs, performance characteristics, and working mechanisms' analysis. This comprehensive review provides fundamental theoretical and applied guidance for future research directions in piezotronics and piezo-phototronics for optoelectronic devices and energy harvesting.

Photoluminescence and Electrical Properties of n-Ce-Doped ZnO Nanoleaf/p-Diamond Heterojunction

The n-type Ce:ZnO (NL) grown using a hydrothermal method was deposited on a p-type boron-doped nanoleaf diamond (BDD) film to fabricate an n-Ce:ZnO NL/p-BDD heterojunction. It shows a significant enhancement in photoluminescence (PL) intensity and a more pronounced blue shift of the UV emission peak (from 385 nm to 365 nm) compared with the undoped heterojunction (n-ZnO/p-BDD). The prepared heterojunction devices demonstrate good thermal stability and excellent rectification characteristics at different temperatures. As the temperature increases, the turn-on voltage and ideal factor (n) of the device gradually decrease. The electronic transport behaviors depending on temperature of the heterojunction at different bias voltages are discussed using an equilibrium band diagram and semiconductor theoretical model.

Enhanced Photoluminescence and Electrical Properties of n-Al-Doped ZnO Nanorods/p-B-Doped Diamond Heterojunction

The hydrothermal approach has been used to fabricate a heterojunction of n-aluminum-doped ZnO nanorods/p-B-doped diamond (n-Al:ZnO NRs/p-BDD). It exhibits a significant increase in photoluminescence (PL) intensity and a blue shift of the UV emission peak when compared to the n-ZnO NRs/p-BDD heterojunction. The current voltage (I-V) characteristics exhibit excellent rectifying behavior with a high rectification ratio of 838 at 5 V. The n-Al:ZnO NRs/p-BDD heterojunction shows a minimum turn-on voltage (0.27 V) and reverse leakage current (0.077 μA). The forward current of the n-Al:ZnO NRs/p-BDD heterojunction is more than 1300 times than that of the n-ZnO NRs/p-BDD heterojunction at 5 V. The ideality factor and the barrier height of the Al-doped device were found to decrease. The electrical transport behavior and carrier injection process of the n-Al:ZnO NRs/p-BDD heterojunction were analyzed through the equilibrium energy band diagrams and semiconductor theoretical models.

The Deformation Behavior and Bending Emissions of ZnO Microwire Affected by Deformation-Induced Defects and Thermal Tunneling Effect

The realization of electrically pumped emitters at micro and nanoscale, especially with flexibility or special shapes is still a goal for prospective fundamental research and application. Herein, zinc oxide (ZnO) microwires were produced to investigate the luminescent properties affected by stress. To exploit the initial stress, room temperature in situ elastic bending stress was applied on the microwires by squeezing between the two approaching electrodes. A novel unrecoverable deformation phenomenon was observed by applying a large enough voltage, resulting in the formation of additional defects at bent regions. The electrical characteristics of the microwire changed with the applied bending deformation due to the introduction of defects by stress. When the injection current exceeded certain values, bright emission was observed at bent regions, ZnO microwires showed illumination at the bent region priority to straight region. The bent emission can be attributed to the effect of thermal tunneling electroluminescence appeared primarily at bent regions. The physical mechanism of the observed thermoluminescence phenomena was analyzed using theoretical simulations. The realization of electrically induced deformation and the related bending emissions in single microwires shows the possibility to fabricate special-shaped light sources and offer a method to develop photoelectronic devices.

Advances in ultrasensitive piezoresistive sensors: from conventional to flexible and stretchable applications

The piezoresistive effect has been a dominant mechanical sensing principle that has been widely employed in a range of sensing applications. This transducing concept still receives great attention because of the huge demand for developing small, low-cost, and high-performance sensing devices. Many researchers have extensively explored new methods to enhance the piezoresistive effect and to make sensors more and more sensitive. Many interesting phenomena and mechanisms to enhance the sensitivity have been discovered. Numerous review papers on the piezoresistive effect have been published; however, there is no comprehensive review article that thoroughly analyses methods and approaches to enhance the piezoresistive effect. This paper comprehensively reviews and presents all the advanced enhancement methods ranging from the quantum physical effect and new materials to nanoscopic and macroscopic structures, and from conventional rigid to flexible, stretchable and wearable applications. In addition, the paper summarises results recently achieved on applying the above-mentioned innovative sensing enhancement techniques in making extremely sensitive piezoresistive transducers.

Piezoresistive Effect with a Gauge Factor of 18 000 in a Semiconductor Heterojunction Modulated by Bonded Light-Emitting Diodes

Giant piezoresistive effect enables the development of ultrasensitive sensing devices to address the increasing demands from hi-tech applications such as space exploration and self-driving cars. The discovery of the giant piezoresistive effect by optoelectronic coupling leads to a new strategy for enhancing the sensitivity of mechanical sensors, particularly with light from light-emitting diodes (LEDs). This paper reports on the piezoresistive effect in a 3C-SiC/Si heterostructure with a bonded LED that can reach a gauge factor (GF) as high as 18 000. This value represents an approximately 1000 times improvement compared to the configuration without a bonded LED. This GF is one of the highest GFs reported to date for the piezoresistive effect in semiconductors. The generation of carrier concentration gradient in the top thin 3C-SiC film under illumination from the LED coupling with the tuning current contributes to the modulation of the piezoresistive effect in a 3C-SiC/Si heterojunction. In addition, the feasibility of using different types of LEDs as the tools for modulating the piezoresistive effect is investigated by evaluating lateral photovoltage and photocurrent under LED's illumination. The generated lateral photovoltage and photocurrent are as high as 14 mV and 47.2 μA, respectively. Recent technologies for direct bonding of micro-LEDs on a Si-based device and the discovery reported here may have a significant impact on mechanical sensors.

SiC Nanowire-Si3N4 Nanobelt Interlocking Interfacial Enhancement of Carbon Fiber Composites with Boosting Mechanical and Frictional Properties

Carbon fiber composites composed of carbon fiber and pyrolytic carbon (PyC) matrix have great potential application in the brakes of aircrafts, where the combination of high mechanical strength and excellent frictional properties are required. In this work, two-component silicon-based interlocking enhancements were designed and constructed into carbon fiber composites for boosting the mechanical and frictional properties. Specially, silicon carbide nanowires (SiCnws) and silicon nitride nanobelts (Si₃N₄nbs) could form interlocking architectures, where SiCnws are rooted firmly on the carbon fiber surface in the radial direction and Si₃N₄nbs integrate the PyC matrix with carbon fibers together via a networked shape. SiCnws-Si₃N₄nbs not only refine the PyC matrix but also promote the bonding of the fiber/matrix interface and the cohesion strength of the PyC matrix, thus enhancing the mechanical and frictional properties. Benefiting from the SiCnws-Si₃N₄nbs synergistic effect and interlocking enhancement mechanism, the interlaminar shear strength and compressive strength of carbon fiber composites increased by 88.41% and 73.40%, respectively. In addition, the friction coefficient and wear rate of carbon fiber composites decreased by 39.50% and 69.88%, respectively. This work could open up an interlocking enhancement strategy for efficiently fabricating carbon fiber composites and promoting mechanical and frictional properties that could be used in the brakes of aircrafts.

Giant Piezoresistance in B-Doped SiC Nanobelts with a Gauge Factor of -1800

The giant piezoresistance effect (PRE) of semiconductors as featured by a high gauge factor (GF) is recognized as the prerequisite for realizing optimal pressure sensors with desired high sensitivity. In this work, we report the discovery of giant PRE in SiC nanobelts with a record GF measured using an atomic force microscope. The transverse piezoresistance coefficient along the [111] direction reaches as high as -312.51 × 10^-11 pa^-1 with a corresponding GF up to -1875.1, which is twice more than the highest value ever reported on SiC nanomaterials. The first-principles calculations reveal that B doping turns the acceptor states in the bandgap into deeper impurity levels, which makes the major contribution to the observed giant piezoresistance behavior. Our result provides new insights on designing pressure sensors based on SiC nanomaterials.