Piezoresistive Effect with a Gauge Factor of 18 000 in a Semiconductor Heterojunction Modulated by Bonded Light-Emitting Diodes

Giant piezoresistive effect enables the development of ultrasensitive sensing devices to address the increasing demands from hi-tech applications such as space exploration and self-driving cars. The discovery of the giant piezoresistive effect by optoelectronic coupling leads to a new strategy for enhancing the sensitivity of mechanical sensors, particularly with light from light-emitting diodes (LEDs). This paper reports on the piezoresistive effect in a 3C-SiC/Si heterostructure with a bonded LED that can reach a gauge factor (GF) as high as 18 000. This value represents an approximately 1000 times improvement compared to the configuration without a bonded LED. This GF is one of the highest GFs reported to date for the piezoresistive effect in semiconductors. The generation of carrier concentration gradient in the top thin 3C-SiC film under illumination from the LED coupling with the tuning current contributes to the modulation of the piezoresistive effect in a 3C-SiC/Si heterojunction. In addition, the feasibility of using different types of LEDs as the tools for modulating the piezoresistive effect is investigated by evaluating lateral photovoltage and photocurrent under LED's illumination. The generated lateral photovoltage and photocurrent are as high as 14 mV and 47.2 μA, respectively. Recent technologies for direct bonding of micro-LEDs on a Si-based device and the discovery reported here may have a significant impact on mechanical sensors.

High Temperature Ultrasonic Transducers: A Review

There are many fields such as online monitoring of manufacturing processes, non-destructive testing in nuclear plants, or corrosion rate monitoring techniques of steel pipes in which measurements must be performed at elevated temperatures. For that high temperature ultrasonic transducers are necessary. In the presented paper, a literature review on the main types of such transducers, piezoelectric materials, backings, and the bonding techniques of transducers elements suitable for high temperatures, is presented. In this review, the main focus is on ultrasonic transducers with piezoelectric elements suitable for operation at temperatures higher than of the most commercially available transducers, i.e., 150 °C. The main types of the ultrasonic transducers that are discussed are the transducers with thin protectors, which may serve as matching layers, transducers with high temperature delay lines, wedges, and waveguide type transducers. The piezoelectric materials suitable for high temperature applications such as aluminum nitride, lithium niobate, gallium orthophosphate, bismuth titanate, oxyborate crystals, lead metaniobate, and other piezoceramics are analyzed. Bonding techniques used for joining of the transducer elements such as joining with glue, soldering, brazing, dry contact, and diffusion bonding are discussed. Special attention is paid to efficient diffusion and thermo-sonic diffusion bonding techniques. Various types of backings necessary for improving a bandwidth and to obtain a short pulse response are described.