Realization of Moisture-Resistive Perovskite Films for Highly Efficient Solar Cells Using Molecule Incorporation

Efficient pure-red perovskite light-emitting diodes with strong passivation via ultrasmall-sized molecules

Perovskite light-emitting diodes (PeLEDs) have attracted great attention in recent years; however, the halogen vacancy defects in perovskite notably hamper the development of high-efficiency devices. Previously, large-sized passivation agents have been usually used, while the effect of defect passivation is limited due to the weak bonding or the large space steric hindrance. Here, we predict that the ultrasmall-sized formate (Fa) and acetate (Ac) have more efficient passivation ability because of the stronger binding with the perovskite, as demonstrated by density functional theory calculation. We introduce ultrasmall-sized cesium salts (CsFa/CsAc) into buried interface, which can also diffuse into the bulk, resulting in both buried interface and bulk passivation. In addition, the improved perovskite growth has been found due to the enhanced hydrophily after introducing CsFa/CsAc as additive. According to these advantages, a pure-red PeLED with 24.2% efficiency at 639 nm has been achieved.

Polymer Electrolyte Dielectrics Enable Efficient Exciton-Polaron Quenching in Organic Semiconductors for Photostable Organic Transistors

The photoelectric response of organic field-effect transistors (OFETs) will cause severe photoelectric interference, which hinders the applications of OFETs in the light environment. It is highly challenging to relieve this problem because of the high photosensitivity of most organic semiconductors. Here, we propose an efficient "exciton-polaron quenching" strategy to suppress the photoelectric response and thus construct highly photostable OFETs by utilizing a polymer electrolyte dielectric─poly(acrylic acid) (PAA). This dielectric produces high-density polarons in organic semiconductors under a gate electric field that quench the photogenerated excitons with high efficiency (∼70%). As a result, the OFETs with PAA dielectric exhibit unprecedented photostability against strong light irradiation up to 214 mW/cm², which far surpasses the reported values and solar irradiance value (∼138 mW/cm²). The strategy shows high universality in OFETs with different OSCs and electrolytes. As a demonstration, the photostable OFET can stably drive an organic light-emitting diode (OLED) under light irradiation. This work presents an efficient exciton modulation strategy in OSC and proves a high potential in practical applications.

Organic Chloride Salt Interfacial Modified Crystallization for Efficient Antimony Selenosulfide Solar Cells

Antimony selenosulfide, Sb₂(SSe)₃, is recognized as an excellent photoactive material owing to its light harvesting capability. There is still room for improvement of the film quality for device performance improvement. Herein, an organic chloride salt [diethylamine hydrochloride, DEA(Cl)] has been introduced for fabricating Sb₂(SSe)₃ solar cells for the first time. A champion device with a power conversion efficiency (PCE) of 9.17% has been achieved with a relatively improved fill factor and open-circuit voltage (V_OC). It has been revealed that DEA(Cl) successfully interacts with Sb₂(SSe)₃, which can facilitate the crystallization process to give rise to the closely packed bigger grain sizes with reduced surface cracks; it successfully suppressed the oxidized Sb species (Sb₂O₃) in the Sb₂(SSe)₃ film to give rise to phase purity, thus leading to superior surface morphology and electrical characteristics of DEA(Cl)-modified Sb₂(SSe)₃ absorber films. Chloride modification is thus efficiently helpful in suppressing interfacial defects, improving junction quality, and optimizing energy-level alignment. This facile interfacial modification demonstrates the remarkable potential for efficient Sb₂(SSe)₃ solar cells.

Low Dark Current and Performance Enhanced Perovskite Photodetector by Graphene Oxide as an Interfacial Layer

Organic-inorganic hybrid perovskite photodetectors are gaining much interest recently for their high performance in photodetection, due to excellent light absorption, low cost, and ease of fabrication. Lower defect density and large grain size are always favorable for efficient and stable devices. Herein, we applied the interface engineering technique for hybrid trilayer (TiO2/graphene oxide/perovskite) photodetector to attain better crystallinity and defect passivation. The graphene oxide (GO) sandwich layer has been introduced in the perovskite photodetector for improved crystallization, better charge extraction, low dark current, and enhanced carrier lifetime. Moreover, the trilayer photodetector exhibits improved device performance with a high on/off ratio of 1.3 × 104, high responsivity of 3.38 AW-1, and low dark current of 1.55 × 10-11 A. The insertion of the GO layer also suppressed the perovskite degradation process and consequently improved the device stability. The current study focuses on the significance of interface engineering to boost device performance by improving interfacial defect passivation and better carrier transport.