Strain-Induced Ultrahigh Electron Mobility and Thermoelectric Figure of Merit in Monolayer α-Te

ROS-Activated Nanohydrogel Scaffolds with Multi-Factors Controlled Release for Targeted Dual-Lineage Repair of Osteochondral Defects

Achieving self-healing for osteochondral defects caused by trauma, aging, or disease remains a significant challenge in clinical practice. It is an effective therapeutic strategy to construct gradient-biomimetic biomaterials that replicate the hierarchical structure and complex microenvironment of osteochondral tissues for dual-lineage regeneration of both cartilage and subchondral bone. Herein, ROS-activated nanohydrogels composite bilayer scaffolds with multi-factors controlled release are rationally designed using the combination of 3D printing and gelatin placeholder methods. The resulting nanohydrogel scaffolds exhibit micro-nano interconnected porous bilayer structure and soft-hard complex mechanical strength for facilitating 3D culture of BMSCs in vitro. More importantly, multi-stage continuous responses of anti-inflammation, chondrogenesis and osteogenesis, are effectively induced via the sequential release of multi-factors, including diclofenac sodium (DS), kartogenin (KGN) and bone morphogenetic protein 2 (BMP-2), from ROS-activated nanohydrogel scaffolds, thereby improved dual-lineage regeneration of cartilage and subchondral bone tissue in the osteochondral defect model of SD rats. These findings suggest that ROS-activated nanohydrogel scaffolds with such specific soft-hard bilayer structure and sequential delivery of functional factors, provides a promising strategy in dual-lineage regeneration of osteochondral defects.

Giant Enhancement of Hole Mobility for 4H-Silicon Carbide through Suppressing Interband Electron-Phonon Scattering

4H-silicon carbide (4H-SiC) possesses a high Baliga figure of merit, making it a promising material for power electronics. However, its applications are limited by low hole mobility. Herein, we found that the hole mobility of 4H-SiC is mainly limited by the strong interband electron-phonon scattering using mode-level first-principles calculations. Our research indicates that applying compressive strain can reverse the sign of crystal-field splitting and change the ordering of electron bands close to the valence band maximum. Therefore, the interband electron-phonon scattering is severely suppressed and the electron group velocity is significantly increased. The out-of-plane hole mobility of 4H-SiC can be greatly enhanced by ∼200% with 2% uniaxial compressive strain applied. This work provides new insights into the electron transport mechanisms in semiconductors and suggests a strategy to improve hole mobility that could be applied to other semiconductors with hexagonal crystalline geometries.

Understanding the origin of the high thermoelectric figure of merit of Zintl-phase KCaBi

Herein, we have investigated the unexplored thermoelectric properties of Zintl-phase KCaBi using first-principles calculation and the solution of the Boltzmann transport equation. KCaBi shows intrinsically very low lattice thermal conductivities (κl) along the (x(y), and z)-directions of (1.78, 0.68) and (1.15, 0.43) W m-1 K-1 at 300 and 800 K, respectively. Along with the effect of very low κl, the high figure of merit (ZT) for p-type KCaBi results from the high Seebeck coefficients (S) and optimal electrical conductivities (σ), which originate from the high and steep total density of state (TDOS) at the valence band edge and the less dispersed multi-valley nature of the valence band edge in the band structure. On the other hand, large ZT for n-type KCaBi results from moderate S and high σ caused by the sloped TDOS at the conduction band edge and the highly dispersed nature of the conduction band edge in the band structure, and very low values of κl. The highest ZT of KCaBi that we obtained at 800 K along the (x(y), and z)-directions was (1.83, 0.80) for the p-type case at a hole concentration of 1021 cm-3 and (1.36, 1.22) for the n-type case at electron concentration 7 × 1018 cm-3. Our study demonstrates that both p-type and n-type KCaBi have the potential to be promising thermoelectric materials.

Strong Intervalley Scattering-Induced Renormalization of Electronic and Thermal Transport Properties and Selection Rule Analysis in 2D Tellurium

The electron-phonon interaction (EPI) and phonon-phonon interactions are ubiquitous in promising two-dimensional (2D) semiconductors, determining both electronic and thermal transport properties. In this work, based on ab initio calculations, the effects of intervalley scattering on EPI and higher-order four-phonon interactions of α-Te and β-Te are investigated. Through the proposed selection rules for scattering channels and calculations of full electron-phonon scattering rates, we demonstrate that multiple nearly degenerate local valleys/peaks produce more scattering channels, resulting in stronger intervalley scattering over intravalley scattering. The lattice thermal conductivities of α-Te and β-Te are decreased by as much as 10.9% and 30.8% by considering EPI under the carrier concentration of 2 × 1013 cm-2 (n-type) at 300 K compared to those limited by three-phonon scattering, respectively. However, when further considering four-phonon scattering, EPI reduces the lattice thermal conductivities by 2.6% and 19.4% for α-Te and β-Te, respectively. Furthermore, it is revealed that the four-phonon interaction is more dominant in phonon transport for α-Te than that for β-Te due to the presence of an acoustic-optical phonon gap in α-Te. Finally, we demonstrate strong intervalley scattering induces significant renormalization effects from EPI on all the constituent parameters of thermoelectric performance. Our results show the contributions of intervalley scattering to the electronic properties as well as thermal transport properties in band-convergent thermoelectric materials are essential and highlight the potential of monolayer tellurium as a promising candidate for advanced thermoelectric applications.

Boosting thermoelectric performance of HfSe2 monolayer by selectivity chemical adsorption

In this work, a strategy to boosting thermoelectric (TE) performance of 2D materials is explored. We find that, appropriate chemical adsorption of atoms can effectively increase the TE performance of HfSe₂ monolayer. Our results show that the adsorption of Ni atom on HfSe₂ monolayer (Ni-HfSe₂) can improve the optimal power factor PF and ZT at 300 K, increased by more than ∼67% and ∼340%, respectively. The PF and ZT of Ni-HfSe₂ at 300 K can reach 85.06 mW m^-1 K^-2 and 3.09, respectively. The detailed study reveal that the adsorption of Ni atom can induce additional conductional channels of electrons, enhance the coupling of acoustic-optical phonons and the phonon anharmonicity, resulting in an obvious increment of electrical conductivity (increased by more than ∼89%) in n-type doped system and an ultralow phonon thermal conductivity (1.17 W/mK at 300 K). The high electrical conductivity and ultralow phonon thermal conductivity results in the significant increments of PF and ZT. Our study also shows that, Ni-HfSe₂ is a thermal, dynamic and mechanical stable structure, which can be employed in TE application. Our research indicates that selectivity chemical adsorption is a promising way to increase TE performance of 2D materials.

Topologically-Enhanced Thermoelectric Properties in Bi2Te3-Based Compounds: Effects of Grain Size and Misorientation

Topological insulators (TIs) and thermoelectric (TE) materials seem to belong to distinct physical realms; however, in practice, they both share common characteristics. Introducing concepts from TIs into TE materials to enhance their performance and achieve better understanding of electronic transport requires extensive research. Particularly, grain size, misorientation, and grain boundary (GB) character are of utmost importance to attain effective charge carrier transport in TE polycrystals; these factors, however, have not been thoroughly explored. Herein, we investigate the correlation between grain size, misorientation, and lattice strain in Bi2Te3 and its TI signature, aiming to improve its TE performance. We reveal an unusual behavior showing that electron mobility increases upon the increase of grain size, reaching at a maximum value of 495 cm2/V·s for an optimum grain size of 600 nm and most-frequent GB misorientation angle of 60° and then decreases with increasing grain size. It is also indicated that the combined effects of grain size reduction and point defects induce lattice strain in the Bi2Te3-matrix that is essential to trigger the TI contribution to TE transport. This trend is corroborated by first-principles calculations showing that compressive strains form multiple valleys in the valence band and opens the TI band gap. Such a combination of physical phenomena in a well-known TE material is unique and can promote our understanding of the nature of TE transport with implications for TE energy conversion.

Effect of High Order Phonon Scattering on the Thermal Conductivity and Its Response to Strain of a Penta-NiN2 Sheet

Motivated by the recent synthesis of penta-NiN₂, a new two-dimensional (2D) planar material entirely composed of pentagons [ ACS Nano 2021, 15, 13539], we study its thermal transport properties based on first-principles calculations and solving the Boltzmann transport equation within the self-consistent phonon theory and four-phonon scattering formalism. We find that the intrinsic lattice thermal conductivity of penta-NiN₂ is 11.67 W/mK at room temperature, which is reduced by 89.32% as compared to the value obtained by only considering three-phonon scattering processes. More interestingly, different from the general response of thermal conductivity to external strain in most 2D materials, an oscillatory decrease of the thermal conductivity with increasing biaxial tensile strain is observed, which can be attributed to the renormalization of vibrational frequencies and the nonmonotonic variation of phonon scattering rates. This work provides an accurate intrinsic thermal conductivity of penta-NiN₂ and elucidates the effects of the strain-tuned vibrational modes and phonon band gap on the four-phonon scattering processes, shedding light on a better understanding of the physical mechanisms of thermal transport properties in 2D pentagon-based materials.

Ultrahigh thermoelectric performance of Janus α-STe2 and α-SeTe2 monolayers

Janus α-STe2 and α-SeTe2 monolayers are investigated systematically using first-principles calculations combined with semiclassical Boltzmann transport theory.

Biaxial Tensile Strain-Induced Enhancement of Thermoelectric Efficiency of α-Phase Se2Te and SeTe2 Monolayers

Thermoelectric (TE) materials can convert waste heat into electrical energy, which has attracted great interest in recent years. In this paper, the effect of biaxial-tensile strain on the electronic properties, lattice thermal conductivity, and thermoelectric performance of α-phase Se₂Te and SeTe₂ monolayers are calculated based on density-functional theory and the semiclassical Boltzmann theory. The calculated results show that the tensile strain reduces the bandgap because the bond length between atoms enlarges. Moreover, the tensile strain strengthens the scatting rate while it weakens the group velocity and softens the phonon model, leading to lower lattice thermal conductivity k_l. Simultaneously, combined with the weakened k_l, the tensile strain can also effectively modulate the electronic transport coefficients, such as the electronic conductivity, Seebeck coefficient, and electronic thermal conductivity, to greatly enhance the ZT value. In particular, the maximum n-type doping ZT under 1% and 3% strain increases up to six and five times higher than the corresponding ZT without strain for the Se₂Te and SeTe₂ monolayers, respectively. Our calculations indicated that the tensile strain can effectively enhance the thermoelectric efficiency of Se₂Te and SeTe₂ monolayers and they have great potential as TE materials.

Theoretical investigations of novel Janus Pb2SSe monolayer as a potential multifunctional material for piezoelectric, photovoltaic, and thermoelectric applications

Two-dimensional Janus nanomaterials, due to their unique electronic, optical, and piezoelectric characteristics resulting from the antisymmetric structures, exhibit great prospects in multifunctional energy application to alleviate the energy crisis. Monolayer Janus Pb₂SSe, with a black phosphorus-like structure and an indirect band gap of 1.59 eV as well as high carrier mobility (526-2105 cm² V^-1 s^-1), displays outstanding potentials in the energy conversion between nanomechanical energy, solar energy, waste heat, and electricity, which has been comprehensively studied utilizing DFT-based simulations. The research results reveal that monolayer Pb₂SSe not only possesses giant in-plane piezoelectricity of d₁₁ = 75.1 pm V^-1 but also superhigh out-of-plane piezoelectric coefficients (d₃₁ = 0.5 pm V^-1 and d₃₃ = 15.7 pm V^-1). Meanwhile, by constructing Pb₂SSe bilayers, the out-of-plane piezoelectric coefficients can be significantly enhanced (d₃₁ = 19.2 pm V^-1 and d₃₃ = 194.7 pm V^-1). In addition, owing to the small conduction band offset, suitable donor band gap and excellent light absorption capability in the Pb₂SSe/SnSe (Pb₂SSe/GeSe) heterostructure, the power conversion efficiencies were calculated to be up to 20.02% (Pb₂SSe/SnSe) and 19.28% (Pb₂SSe/GeSe), making it a promising candidate for solar energy collection. Furthermore, from the thermoelectric electron and phonon transport calculations, it can be found that the Pb₂SSe monolayer is an n-type thermoelectric material with ultrahigh ZT = 2.19 (1.52) at room temperature, which can be traced back to its ultralow κ_L = 0.78 (0.99) W m^-1 K^-1, and superhigh PF = 10.18 (8.25) mW m^-1 K^-2 along the x(y) direction at the optimal doping concentration at 300 K. The abovementioned versatile characteristics in the Janus Pb₂SSe monolayer, along with its comprehensive stabilities (energy, dynamic, thermal, and mechanical stabilities), highlight its potential in clean energy harvesting.

Strain-driven dynamic stability and anomalous enhancement of thermal conductivity in graphene-like IIA-VI monolayer monoxides

Graphene-like IIA-VI monolayer monoxides have been predicted to be novel two-dimensional materials with intrinsic bandgap, which makes them promising prospect for electronics and optoelectronics applications. In the field of microelectronics, heat dissipation is considered as the bottleneck that limits further development. Thus, the effective regulation in thermal transport is of great interest for designing novel devices. A systematic study in this work is carried out by first-principles method to explore thermal conductivity of these monoxides under strain. Compared with that of minimum strained MgO, CaO, SrO and BaO, the maximum thermal conductivity is increased by 3.25, 3.07, 1.50 and 1.53 times, respectively, under tensile strain. Detailed analysis shows that the weakened phonon-phonon scattering strength is the behind physical mechanism. It is also found that the tensile strain aids to improving the stability. Our work provides an attractive platform by studying the thermal transport of these monoxides under strain, suggesting the possible applications of these monolayers in novel devices.