Large-Area Flexible Printed Thin-Film Transistors with Semiconducting Single-Walled Carbon Nanotubes for NO2 Sensors

Low temperature inkjet-printed metal oxide sensors for sensitive and selective NO2 detection

Advancements in gas sensor technology are critical for enhancing environmental monitoring and pollution control systems. Among the various sensor types, inkjet-printed gas sensors have emerged as a promising solution due to their low fabrication cost, scalable production, and compatibility with modern electronics. This study presents the development and characterization of inkjet-printed chemiresistive gas microsensors based on tin oxide (SnO2) and indium oxide (In2O3) for the detection of nitrogen dioxide (NO2), a major air pollutant associated with vehicular emissions and industrial activities. The sensors were fabricated on compact CMOS-compatible microchips, with integrated microheaters and electrodes measuring less than 250 × 250 μm, enabling miniaturization and potential on-chip integration for portable sensing platforms. Metal oxide sols were deposited using a precise inkjet printing technique, and crystallization of the sensing layers was achieved via localized heating through the integrated microheaters. The SnO2 sensor demonstrated excellent sensitivity at room temperature, detecting NO2 concentrations as low as 10 ppb, while the In2O3 sensor showed optimal performance at 100 °C with comparable detection limits. Both sensors exhibited linear response behavior over a range of NO2 concentrations, along with strong selectivity against common interfering gases. Although humidity induced minor fluctuations, both sensors maintained robust NO2 selectivity. These results underscore the potential of inkjet-printed metal oxide microsensors for developing compact, low-power, and highly sensitive gas detection systems.

High-sensitivity and energy-efficient chloride ion sensors based on flexible printed carbon nanotube thin-film transistors for wearable electronics

The advent of flexible single-walled carbon nanotube thin-film transistors (SWCNT-TFTs) has transformed electronics, providing significant benefits like low operating voltage, reduced power consumption, cost-effectiveness, and improved signal amplification. This study focuses on leveraging these attributes to develop a novel flexible high-sensitivity and energy-efficient chloride ion sensors based on printed flexible SWCNT-TFTs utilizing polymers-sorted semiconducting SWCNTs (sc-SWCNTs) as the active layers and ion liquids-poly(4-vinylphenol as dielectric layers along with the evaporated deposition of aluminum electrodes and printed silver electrodes as the gate and source-drain electrodes, respectively. The sensors exhibit several operational advantages, including low voltage requirements (≤1 V), rapid response speed (5.32 s), significant signal amplification (Up to 702.6 %), low power consumption (0.31 μJ at 1 mmol chloride ion), good repeatability, high sensitivity for both low and high concentrations of chloride ion (up to 100 mmol/L) and excellent mechanical flexibility (No obvious changes after bending for 10,000 times with a 5 mm radius). The detection mechanism of chloride ions was analyzed using X-ray Photoelectron Spectroscopy (XPS). It was found that chloride ions react with silver nanoparticles (AgNPs) to form silver chloride (AgCl) on printed electrodes, impeding carrier transport and reducing the currents in SWCNT TFTs. Importantly, our sensors' compatibility with smart devices allows for real-time monitoring of chloride ion levels in human sweat, offering significant potential for daily health monitoring.

Autonomous Artificial Olfactory Sensor Systems with Homeostasis Recovery via a Seamless Neuromorphic Architecture

Neuromorphic olfactory systems have been actively studied in recent years owing to their considerable potential in electronic noses, robotics, and neuromorphic data processing systems. However, conventional gas sensors typically have the ability to detect hazardous gas levels but lack synaptic functions such as memory and recognition of gas accumulation, which are essential for realizing human-like neuromorphic sensory system. In this study, a seamless architecture for a neuromorphic olfactory system capable of detecting and memorizing the present level and accumulation status of nitrogen dioxide (NO2) during continuous gas exposure, regulating a self-alarm implementation triggered after 147 and 85 s at a continuous gas exposure of 20 and 40 ppm, respectively. Thin-film-transistor type gas sensors utilizing carbon nanotube semiconductors detect NO2 gas molecules through carrier trapping and exhibit long-term retention properties, which are compatible with neuromorphic excitatory applications. Additionally, the neuromorphic inhibitory performance is also characterized via gas desorption with programmable ultraviolet light exposure, demonstrating homeostasis recovery. These results provide a promising strategy for developing a facile artificial olfactory system that demonstrates complicated biological synaptic functions with a seamless and simplified system architecture.

Underground Ink: Printed Electronics Enabling Electrochemical Sensing in Soil

Improving agricultural production relies on the decisions and actions of farmers and land managers, highlighting the importance of efficient soil monitoring techniques for better resource management and reduced environmental impacts. Despite considerable advancements in soil sensors, their traditional bulky counterparts cause difficulty in widespread adoption and large-scale deployment. Printed electronics emerge as a promising technology, offering flexibility in device design, cost-effectiveness for mass production, and a compact footprint suitable for versatile deployment platforms. This review overviews how printed sensors are used in monitoring soil parameters through electrochemical sensing mechanisms, enabling direct measurement of nutrients, moisture content, pH value, and others. Notably, printed sensors address scalability and cost concerns in fabrication, making them suitable for deployment across large crop fields. Additionally, seamlessly integrating printed sensors with printed antenna units or traditional integrated circuits can facilitate comprehensive functionality for real-time data collection and communication. This real-time information empowers informed decision-making, optimizes resource management, and enhances crop yield. This review aims to provide a comprehensive overview of recent work related to printed electrochemical soil sensors, ultimately providing insight into future research directions that can enable widespread adoption of precision agriculture technologies.

Wide-range and selective detection of SARS-CoV-2 DNA via surface modification of electrolyte-gated IGZO thin-film transistors

The 2019 coronavirus pandemic resulted in a massive global healthcare crisis, highlighting the necessity to develop effective and reproducible platforms capable of rapidly and accurately detecting SARS-CoV-2. In this study, we developed an electrolyte-gated indium-gallium-zinc-oxide (IGZO) thin-film transistor with sequential surface modification to realize the low limit of detection (LoD <50 fM) and a wide detection range from 50 fM to 5 μM with good linearity (R2 = 0.9965), and recyclability. The surface chemical modification was achieved to anchor the single strand of SARS-CoV-2 DNA via selective hybridization. Moreover, the minute electrical signal change following the chemical modification was investigated by in-depth physicochemical analytical techniques. Finally, we demonstrate fully recyclable biosensors based on oxygen plasma treatment. Owing to its cost-effective fabrication, rapid detection at the single-molecule level, and low detection limit, the proposed biosensor can be used as a point-of-care platform to perform timely and effective SARS-CoV-2 detection.

Disclosing Fast Detection Opportunities with Nanostructured Chemiresistor Gas Sensors Based on Metal Oxides, Carbon, and Transition Metal Dichalcogenides

With the emergence of novel sensing materials and the increasing opportunities to address safety and life quality priorities of our society, gas sensing is experiencing an outstanding growth. Among the characteristics required to assess performances, the overall speed of response and recovery is adding to the well-established stability, selectivity, and sensitivity features. In this review, we focus on fast detection with chemiresistor gas sensors, focusing on both response time and recovery time that characterize their dynamical response. We consider three classes of sensing materials operating in a chemiresistor architecture, exposed to the most investigated pollutants, such as NH3, NO2, H2S, H2, ethanol, and acetone. Among sensing materials, we first selected nanostructured metal oxides, which are by far the most used chemiresistors and can provide a solid ground for performance improvement. Then, we selected nanostructured carbon sensing layers (carbon nanotubes, graphene, and reduced graphene), which represent a promising class of materials that can operate at room temperature and offer many possibilities to increase their sensitivities via functionalization, decoration, or blending with other nanostructured materials. Finally, transition metal dichalcogenides are presented as an emerging class of chemiresistive layers that bring what has been learned from graphene into a quite large portfolio of chemo-sensing platforms. For each class, studies since 2019 reporting on chemiresistors that display less than 10 s either in the response or in the recovery time are listed. We show that for many sensing layers, the sum of both response and recovery times is already below 10 s, making them promising devices for fast measurements to detect, e.g., sudden bursts of dangerous emissions in the environment, or to track the integrity of packaging during food processing on conveyor belts at pace with industrial production timescales.

Functionalized carbon nanotube field-effect transistor biosensor for highly sensitive detection of exosomal protein

Since the exosomal protein level is related to many diseases, sensitive detection of exosomal protein is highly desirable. Here, we describe a polymer-sorted high-purity semiconducting carbon nanotubes (CNTs) films-based field-effect transistor (FET) biosensor for ultrasensitive and label-free detection of MUC1, a transmembrane protein highly expressed in breast cancer exosomes. Polymer-sorted semiconducting CNTs hold advantages including high purity (>99%), high CNT concentration, and short processing time (<1 h), but they are difficult to be stably functionalized with biomolecules because of lacking hanging bonds on their surface. To solve this issue, poly-lysine (PLL) was employed to modify the CNT films after they were deposited on the sensing channel surface of the fabricated FET chip. To specifically recognize the exosomal protein, sulfhydryl aptamer probes were immobilized on the gold nanoparticles (AuNPs) surface that was assembled on PLL substrate. The aptamer-modified CNT FET was capable of sensitively and selectively detecting exosomal MUC1 as high as 0.34 fg/mL. Moreover, the CNT FET biosensor was able to recognize breast cancer patients from healthy individuals by comparing the expression level of exosomal MUC1. The developed CNT FET biosensor is expected to be a novel assay for early diagnosis of cancer.

1D and 2D Field Effect Transistors in Gas Sensing: A Comprehensive Review

Rapid progress in the synthesis and fundamental understanding of 1D and 2D materials have solicited the incorporation of these nanomaterials into sensor architectures, especially field effect transistors (FETs), for the monitoring of gas and vapor in environmental, food quality, and healthcare applications. Yet, several challenges have remained unaddressed toward the fabrication of 1D and 2D FET gas sensors for real-field applications, which are related to properties, synthesis, and integration of 1D and 2D materials into the transistor architecture. This review paper encompasses the whole assortment of 1D-i.e., metal oxide semiconductors (MOXs), silicon nanowires (SiNWs), carbon nanotubes (CNTs)-and 2D-i.e., graphene, transition metal dichalcogenides (TMD), phosphorene-materials used in FET gas sensors, critically dissecting how the material synthesis, surface functionalization, and transistor fabrication impact on electrical versus sensing properties of these devices. Eventually, pros and cons of 1D and 2D FETs for gas and vapor sensing applications are discussed, pointing out weakness and highlighting future directions.

Large area roll-to-roll printed semiconducting carbon nanotube thin films for flexible carbon-based electronics

A universal roll-to-roll (R2R) printing approach was developed to construct large area (8 cm × 14 cm) semiconducting single-walled carbon nanotube (sc-SWCNT) thin films on flexible substrates (such as polyethylene terephthalate (PET), paper, and Al foils) at a printing speed of 8 m min^-1 using highly concentrated sc-SWCNT inks and crosslinked poly-4-vinylphenol (c-PVP) as the adhesion layer. Bottom-gated and top-gated flexible printed p-type TFTs based on R2R printed sc-SWCNT thin films exhibited good electrical properties with a carrier mobility of ∼11.9 cm² V^-1 s^-1, I_on/I_off ratios of ∼10⁶, small hysteresis, and a subthreshold swing (SS) of 70-80 mV dec^-1 at low gate operating voltages (±1 V), and excellent mechanical flexibility. Furthermore, the flexible printed complementary metal oxide semiconductor (CMOS) inverters demonstrated rail-to-rail voltage output characteristics under an operating voltage as low as V_DD = -0.2 V, a voltage gain of 10.8 at V_DD = -0.8 V, and power consumption as low as 0.056 nW at V_DD = -0.2 V. To the best of our knowledge, the electrical properties of the printed SWCNT TFTs (such as I_on/I_off ratio, mobility, operating voltage, and mechanical flexibility) and printed CMOS inverters based on the R2R printed sc-SWCNT active layer in this work are excellent compared to those of R2R printed SWCNT TFTs reported in the literature. Consequently, the universal R2R printing method reported in this work could promote the development of fully printed low-cost, large-area, high-output, and flexible carbon-based electronics.

Artificial Tactile Recognition Enabled by Flexible Low-Voltage Organic Transistors and Low-Power Synaptic Electronics

The advancement of self-powered intelligent strain systems for human-computer interaction is crucial toward wearable and energy-saving applications. Simultaneously, lowering operating voltage and thus reducing power consumption are of particular interests. A brain-like smart synaptic hardware system is considered as a promising candidate for low-power, parallel computing and learning processes. However, the combination of low-voltage organic transistors and energy efficient smart synapse hardware systems driven by a tactile signal has been hindered by the limited materials and technology. Here, by employing an elastomeric copolymer poly(vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) with a high HFP content of 25 mol %, flexible, low-voltage transistors (|V_G| ≤ 3 V) and a low energy consumption synapse ≤ 9.2 × 10^-17 J are devised simultaneously, along with the lowest quality factor (R = P_w × V_G, 2.76 × 10^-16 J V). Furthermore, based on the low voltage and low power consumption characteristics, flexible artificial tactile recognition system and Morse code recognition are established without any computing supporting. Mechanical flexibility, cycling stability, image contrast enhancement functions, and simulated pattern recognition accuracy of the multilayer perceptron neural network are also simulated. This work recommends a route of exploiting low voltage, low power consumption synaptic systems and smart human-machine interfaces with low energy loss based on flexible organic synaptic transistors.

A Flexible NO2 Gas Sensor Based on Single-Wall Carbon Nanotube Films Doped with a High Level of Nitrogen

Carbon nanotubes (CNTs) are considered a promising candidate for the detection of toxic gases because of their high specific surface area and excellent electrical and mechanical properties. However, the detecting performance of CNT-based detectors needs to be improved because covalently bonded CNTs are usually chemically inert. We prepared a nitrogen-doped single-wall CNT (SWCNT) film by means of gas-phase fluorination followed by thermal annealing in NH3. The doped nitrogen content could be changed in the range of 2.9-9.9 at%. The N-doped SWCNT films were directly used to construct flexible and transparent gas sensors, which can work at a low voltage of 0.01 V. It was found that their NO2 detection performance was closely related to their nitrogen content. With an optimum nitrogen content of 9.8 at%, a flexible sensor had a detection limit of 500 ppb at room temperature with good cycling ability and stability during bending.

Single layer aligned semiconducting single-walled carbon nanotube array with high linear density

Highly ordered semiconducting single-walled carbon nanotubes(sc-SWCNTs) array with high purity, high linear density and controllable manner is strongly desired for carbon-based integrated circuits, yet it remains a big challenge. Herein, close-packed single layered and controllably aligned sc-SWCNTs arrays were obtained through dielectrophoresis using a high purity sc-SWCNT dispersion. Under optimized condition of length and average number of interconnecting junctions across the channel full of aligned sc-SWCNTs, field effect transistors (FETs) with high performance were achieved with both a high on/off current ratio and large carrier mobility. Based on the optimized channel length, by systematically optimizing the dielectrophoresis parameters of the frequency and duration of applied AC voltage (V_pp), the highly ordered sc-SWCNTs arrays with an ultra-high linear density of 54 ± 2 tubesμm^-1showed relatively high device performance of FET. The fabrication process optimized in this report can be further extended and applied in large-area, low-cost carbon-based integrated circuits.

Fabrication and electrical properties of printed three-dimensional integrated carbon nanotube PMOS inverters on flexible substrates

The low resolution of current printing technology (usually 10-100 μm) limits the number of printed thin film transistors (TFTs) per processable area, resulting in the low integration of printed circuits. In this work, we developed a three-dimensional (3D) integration technology to increase the integration of printed TFTs and firstly achieved printed 3D single-walled carbon nanotube (SWCNT) PMOS inverter arrays on the flexible substrates. The flexible 3D PMOS inverter consists of a bottom-gate SWCNT TFT (i.e., a driving TFT) and a top-gate SWCNT TFT (i.e., a load TFT). Printed SWCNT TFTs exhibited good electrical properties with high carrier mobility (up to 9.53 cm² V^-1 s^-1), high I_on/I_off ratio (10⁵-10⁶), low hysteresis, and small subthreshold swing (SS) (70-80 mV dec^-1). As-prepared 3D PMOS inverters exhibited rail-to-rail voltage output characteristics, high voltage gain (10) at a low operating voltage (V_DD < 1 V), and good mechanical flexibility. Furthermore, the printed 3D PMOS inverters could be utilized to detect ammonia gases, exhibiting satisfactory stability and recovery rate. It is crucial for realizing high-density, multi-functional printed carbon-based electronic devices and circuits for wearable electronics and the Internet of Things (IoT).

Simple and rapid gas sensing using a single-walled carbon nanotube field-effect transistor-based logic inverter

Single-walled carbon nanotubes (SWCNTs) are promising candidates for gas sensing applications, providing an efficient solution to the device miniaturization challenge and allowing low power consumption. SWCNT gas sensors are mainly based on field-effect transistors (SWCNT-FETs) where the modification of the current flowing through the nanotube is used for gas detection. A major limitation of these SWCNT-FETs lies in the difficulty to measure their transfer curves, since the flowing current typically varies between 10^-12 and 10^-3 A. Thus, voluminous and energy consuming systems are necessary, severely limiting the miniaturization and low energy consumption. Here, we propose an inverter device that combines two SWCNT-FETs which brings a concrete solution to these limitations and simplifies data processing. In this innovative sensing configuration, the gas detection is based on the variation of an electric potential in the volt range instead of a current intensity variation in the microampere range. In this study, the proof of concept is performed using NO₂ gas but can be easily extended to a wide range of gases.

Selective Chemistry-Based Separation of Semiconducting Single-Walled Carbon Nanotubes and Alignment of the Nanotube Array Network under Electric Field for Field-Effect Transistor Applications

Semiconducting single-walled carbon nanotubes (s-SWCNTs) are considered as a replacement for silicon in field-effect transistors (FETs), solar cells, logic circuits, and so forth, because of their outstanding electronic, optical, and mechanical properties. Herein, we have studied the reaction of pristine SWCNTs dispersed in a pluronic F-68 (PF-68) polymer solution with para-amino diphenylamine diazonium sulfate (PADDS) to separate nanotubes based on their metallicity. The preferential selectivity of the reactions was monitored by changes in the semiconducting (S22 and S33) and metallic (M11) bands by ultraviolet-visible-near infrared spectroscopy. Metallic selectivity depended on the concentrations of PADDS, reaction time, and the solution pH. Furthermore, separation of pure s-SWCNTs was confirmed by Raman spectroscopy and Fourier-transform infrared spectroscopy. After the removal of metallic SWCNTs, direct current electric field was applied to the pure s-SWCNT solution, which effectively directed the nanotubes to align in one direction as nanotube arrays with a longer length and high density. After that, electrically aligned s-SWCNT solution was cast on a silicon substrate, and the length of the nanotube arrays was measured as ∼2 to ∼14 μm with an areal density of ∼2 to ∼20 tubes/μm of s-SWCNTs. Next, electrically aligned s-SWCNT arrays were deposited on the channel of the FET device by drop-casting. Field-emission scanning electron microscopy and electrical measurements have been carried out to test the performance of the aligned s-SWCNTs/FETs. The fabricated FETs with a channel length of 10 μm showed stable electrical properties with a field-effect mobility of 30.4 cm2/Vs and a log10 (I on/I off) current ratio of 3.96. We envisage that this new chemical-based separation method and electric field-assisted alignment could be useful to obtain a high-purity and aligned s-SWCNT array network for the fabrication of high-performance FETs to use in digital and analog electronics.

In-Place Printing of Flexible Electrolyte-Gated Carbon Nanotube Transistors with Enhanced Stability

Ion gel-based dielectrics have long been considered for enabling low-voltage operation in printed thin-film transistors (TFTs), but their compatibility with in-place printing (a streamlined, direct-write printing approach where devices never leave the printer mid- or post-process) remains unexplored. Here, we demonstrate a simple and rapid 4-step in-place printing procedure for producing low-voltage electrolyte-gated carbon nanotube (CNT) thin-film transistors at low temperature (80 °C). This process consists of the use of polymer-wrapped CNT inks for printed channels, silver nanowire inks for printed electrodes, and imidazolium-based ion gel inks for printed gate dielectrics. We find that the efficacy of rinsing CNT films and printing an ion gel in-place is optimized using an elevated platen temperature (as opposed to external rinsing or post-process annealing), where resultant devices exhibited on/off-current ratios exceeding 10³, mobilities exceeding 10 cm²V^-1s^-1, and gate hysteresis of only 0.1 V. Additionally, devices were tested under mechanical strain and long-term bias, showing exceptional flexibility and electrochemical stability over the course of 14-hour bias tests. The findings presented here widen the potential scope of print-in-place (PIP) devices and reveal new avenues of investigation for the improvement of bias stress stability in electrolyte-gated transistors.