CH3NH3PbBr3-xIx Quantum Dots Enhance Bulk Crystallization and Interface Charge Transfer for Efficient and Stable Perovskite Solar Cells

An Impressive Open-Circuit Voltage of 1.223 V and High Humidity Stability of Perovskite Solar Cells with MgO Buffer Layer Deposited by Low-Temperature Atomic Layer Deposition

The performance of perovskite solar cells has been continuously improving. However, humidity stability has become a key problem that hinders its promotion in the process of commercialization. A buffer layer deposited by atomic layer deposition is a very helpful method to solve this problem. In this work, MgO film is deposited between Spiro-OMeTAD and electrode by low-temperature atomic layer deposition at 80 °C, which resists the erosion of water vapor, inhibits the migration of electrode metal ions and the decomposition products of perovskite, then finally improves the stability of the device. At the same time, the MgO buffer layer can passivate the defects of porous Spiro, thus enhancing carrier transport efficiency and device performance. The Cs0.05(FAPbI3)0.85(MAPbBr3)0.15 perovskite device with a MgO buffer layer has displayed PCE of 22.74%, also with a high Voc of 1.223 V which is an excellent performance in devices with same perovskite component. Moreover, the device with a MgO buffer layer can maintain 80% of the initial efficiency after 7200 h of storage at 35% relative humidity under room temperature. This is a major achievement for humidity stability in the world, providing more ideas for further improving the stability of perovskite devices.

All-perovskite tandem solar cells: from fundamentals to technological progress

Organic-inorganic perovskite materials have gradually progressed from single-junction solar cells to tandem (double) or even multi-junction (triple-junction) solar cells as all-perovskite tandem solar cells (APTSCs). Perovskites have numerous advantages: (1) tunable optical bandgaps, (2) low-cost, e.g. via solution-processing, inexpensive precursors, and compatibility with many thin-film processing technologies, (3) scalability and lightweight, and (4) eco-friendliness related to low CO2 emission. However, APTSCs face challenges regarding stability caused by Sn2+ oxidation in narrow bandgap perovskites, low performance due to V oc deficit in the wide bandgap range, non-standardisation of charge recombination layers, and challenging thin-film deposition as each layer must be nearly perfectly homogenous. Here, we discuss the fundamentals of APTSCs and technological progress in constructing each layer of the all-perovskite stacks. Furthermore, the theoretical power conversion efficiency (PCE) limitation of APTSCs is discussed using simulations.

Origin of Water-Stable CsPbX3 Quantum Dots Assisted by Zwitterionic Ligands and Sequential Strategies for Enhanced Luminescence Based on Crystal Evolution

Water stability is a crucial issue always addressed for commercial practical application of perovskite quantum dots (QDs). Recent advances in ligand engineering for in situ synthesis of water-stable perovskite QDs have attracted growing interest. However, the exact mechanism remains unclear. Here, the function of 4-bromobutyric acid (BBA) and oleylamine (OLA) is systematically studied in water-stable CsPbX3 (X = Br and I) QDs and confirms that the zwitterionic ligands generated in situ by BBA and OLA are anchored on the QDs surface, thus preventing water from penetrating into the QDs. Cs4PbBr6 intermediate crystal found in the crystal structure evolution process of CsPbX3 QD further reveals a complete crystallization process: PbX2 + CsX + Br- → Cs4PbBr6 crystals + X-→ CsPbX3 QDs + Br-. Furthermore, it is found that the solvent coordination of the precursor solution has a significant effect on the crystallinity of Cs4PbBr6 intermediate crystal, while the Rb+ doping can effectively passivate the surface defects of CsPbX3 QDs, thereby jointly achieving photoluminescence quantum yields (PLQY) of 94.6% for CsPbBr3 QDs (88.2% for CsPbI3 QDs). This work provides new insights and guiding ideas for the green synthesis of high-quality and water-stable perovskite QDs.

Nanocrystals as performance-boosting materials for solar cells

Nanocrystals (NCs) have been widely studied owing to their distinctive properties and promising application in new-generation photoelectric devices. In photovoltaic devices, semiconductor NCs can act as efficient light harvesters for high-performance solar cells. Besides light absorption, NCs have shown great significance as functional layers for charge (hole and electron) transport and interface modification to improve the power conversion efficiency and stability of solar cells. NC-based functional layers can boost hole/electron transport ability, adjust energy level alignment between a light absorbing layer and charge transport layer, broaden the absorption range of an active layer, enhance intrinsic stability, and reduce fabrication cost. In this review, recent advances in NCs as a hole transport layer, electron transport layer, and interfacial layer are discussed. Additionally, NC additives to improve the performance of solar cells are demonstrated. Finally, a summary and future prospects of NC-based functional materials in solar cells are presented, addressing their limitations and suggesting potential solutions.

Interfacial Engineering of Au@Nb2CTx-MXene Modulates the Growth Strain, Suppresses the Auger Recombination, and Enables an Open-Circuit Voltage of over 1.2 V in Perovskite Solar Cells

Defects at the interface of charge transport layers can cause severe charge accumulation and poor charge transferability, which greatly affect the efficiency and stability of stannic oxide (SnO₂)-based perovskite solar cells (PSCs). Herein, a new type of MXene (Nb₂CT_x-MXene) is applied to the interface of SnO₂ layers to passivate the interfacial defects and promote charge transport. Nb₂CT_x-MXene in PSCs realizes the role of boosting the conductivity, reducing the tin vacancies in the interstitial void of the SnO₂ layer, decreasing the defect density, and aligning the bandgap. Afterward, Nb₂CT_x-MXene is decorated with gold nanospheres, which has the ability to modulate the tensile strain of perovskites and suppress the Auger recombination. Eventually, the Au@Nb₂CT_x-MXene-modified device yields an excellent power conversion efficiency (PCE) of 23.78% with a relatively high open-circuit voltage of 1.215 V (E_g ∼ 1.60 eV). The unencapsulated devices maintain 90% of their initial PCE values after storage in the air with a relative humidity of 40% for 1000 h and remain above 80% of their initial efficiency after operation at the maximum power point for 500 h under 1 sun illumination. Our work provides an avenue to fabricate high-efficiency and stable PSCs with MXene adapting to commercial development.