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Huang H, Wang L, Zhou H, Xing H, Wang L, Zhang W, Tang K, Huang J, Wang L. High-Performance Ga 2O 3 Solar-Blind Photodetector Based on Thermal Oxidized Ga Buffer-Layer. ACS APPLIED MATERIALS & INTERFACES 2024; 16:63808-63817. [PMID: 39523885 DOI: 10.1021/acsami.4c15345] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2024]
Abstract
High-performance Ga2O3 solar-blind photodetectors are critical for applications due to their selective solar-blind ultraviolet sensitivity. The quality of the Ga2O3 film has a significant impact on the performance of photodetectors. This study presents an innovative approach to enhancing the quality of Ga2O3 films through the introduction of a naturally graded buffer layer, which is formed by the oxidation of a metallic Ga film and significantly improves interface stability by accommodating lattice mismatches and reducing defects. The structural and compositional characteristics of Ga2O3 films were comprehensively analyzed using UV-vis (ultraviolet-visible) spectroscopy, AFM (Atomic Force Microscope), PL (Photoluminescence Spectroscopy), TEM (Transmission Electron Microscope), and XPS (X-ray Photoelectron Spectroscopy). The photodetectors fabricated from these films demonstrate responsivity of 99.8 mA/W and a solar-blind UV/UV ratio of 1.17 × 103, with significant improvement compared to direct deposited films. This research highlights the potential of natural buffering layers to advance the performance of Ga2O3-based solar-blind UV detectors.
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Affiliation(s)
- Haofei Huang
- School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
| | - Lulu Wang
- School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
| | - Haichuan Zhou
- School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
| | - Hengzhi Xing
- School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
| | - Lujun Wang
- School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
| | - Wei Zhang
- School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
| | - Ke Tang
- School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
- Zhejiang Institute of Advanced Materials, SHU, Jiashan 314113, China
- Shanghai Collaborative Innovation Center of Intelligent Sensing Chip Technology, Shanghai 201800, China
| | - Jian Huang
- School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
- Zhejiang Institute of Advanced Materials, SHU, Jiashan 314113, China
- Shanghai Collaborative Innovation Center of Intelligent Sensing Chip Technology, Shanghai 201800, China
| | - Linjun Wang
- School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
- Zhejiang Institute of Advanced Materials, SHU, Jiashan 314113, China
- Shanghai Collaborative Innovation Center of Intelligent Sensing Chip Technology, Shanghai 201800, China
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Zhou S, Zheng Q, Yu C, Huang Z, Chen L, Zhang H, Li H, Xiong Y, Kong C, Ye L, Li W. A High-Performance ε-Ga 2O 3-Based Deep-Ultraviolet Photodetector Array for Solar-Blind Imaging. MATERIALS (BASEL, SWITZERLAND) 2022; 16:ma16010295. [PMID: 36614634 PMCID: PMC9822404 DOI: 10.3390/ma16010295] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/21/2022] [Revised: 12/20/2022] [Accepted: 12/23/2022] [Indexed: 05/27/2023]
Abstract
One of the most important applications of photodetectors is as sensing units in imaging systems. In practical applications, a photodetector array with high uniformity and high performance is an indispensable part of the imaging system. Herein, a photodetector array (5 × 4) consisting of 20 photodetector units, in which the photosensitive layer involves preprocessing commercial ε-Ga2O3 films with high temperature annealing, have been constructed by low-cost magnetron sputtering and mask processes. The ε-Ga2O3 ultraviolet photodetector unit shows excellent responsivity and detectivity of 6.18 A/W and 5 × 1013 Jones, respectively, an ultra-high light-to-dark ratio of 1.45 × 105, and a fast photoresponse speed (0.14/0.09 s). At the same time, the device also shows good solar-blind characteristics and stability. Based on this, we demonstrate an ε-Ga2O3-thin-film-based solar-blind ultraviolet detector array with high uniformity and high performance for solar-blind imaging in optoelectronic integration applications.
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Affiliation(s)
| | | | | | | | | | - Hong Zhang
- Correspondence: (H.Z.); (L.Y.); (W.L.); Tel.: +86-23-6536-2779 (W.L.)
| | | | | | | | - Lijuan Ye
- Correspondence: (H.Z.); (L.Y.); (W.L.); Tel.: +86-23-6536-2779 (W.L.)
| | - Wanjun Li
- Correspondence: (H.Z.); (L.Y.); (W.L.); Tel.: +86-23-6536-2779 (W.L.)
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Wang Y, Li H, Cao J, Shen J, Zhang Q, Yang Y, Dong Z, Zhou T, Zhang Y, Tang W, Wu Z. Ultrahigh Gain Solar Blind Avalanche Photodetector Using an Amorphous Ga 2O 3-Based Heterojunction. ACS NANO 2021; 15:16654-16663. [PMID: 34605627 DOI: 10.1021/acsnano.1c06567] [Citation(s) in RCA: 12] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Solar blind photodetectors with a cutoff wavelength within the 200-280 nm region is attracting much attention due to their potential civilian and military applications. The avalanche photodetectors (APDs) formed based on wide-bandgap semiconductor Ga2O3 are expected to meet emerging technological demands. These devices, however, suffer from limitations associated with the quality of as-grown Ga2O3 or the difficulty in alleviating the defects and dislocations. Herein, high-performance APDs incorporating amorphous Ga2O3 (a-Ga2O3)/ITO heterojunction as the central element have been reliably fabricated at room temperature. The a-Ga2O3-based APDs exhibits an ultrahigh responsivity of 5.9 × 104 A/W, specific detectivity of 1.8 × 1014 Jones, and an external quantum efficiency up to 2.9 × 107% under 254 nm light irradiation at 40 V reverse bias. Notably, the gain could reach 6.8 × 104, indicating the outstanding capability for ultraweak signals detection. The comprehensive superior capabilities of the a-Ga2O3-based APDs can be ascribed to the intrinsic carrier transport manners in a-Ga2O3 as well as the modified band alignment at the heterojunctions. The trade-off between low processing temperature and superior characteristics of a-Ga2O3 promises greater design freedom for realization of wide applications of emerging semiconductor Ga2O3 with even better performance since relieving the burden on the integration progress.
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Affiliation(s)
- Yuehui Wang
- State Key Laboratory of Information Photonics and Optical Communications, and School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, P.R. China
| | - Haoran Li
- State Key Laboratory of Information Photonics and Optical Communications, and School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, P.R. China
| | - Jia Cao
- Beijing Institute of Radio Measurement, Beijing 100039, P.R. China
| | - Jiaying Shen
- State Key Laboratory of Information Photonics and Optical Communications, and School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, P.R. China
| | - Qingyi Zhang
- State Key Laboratory of Information Photonics and Optical Communications, and School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, P.R. China
| | - Yongtao Yang
- State Key Laboratory of Information Photonics and Optical Communications, and School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, P.R. China
| | - Zhengang Dong
- State Key Laboratory of Information Photonics and Optical Communications, and School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, P.R. China
| | - Tianhong Zhou
- Institute of Modern Optics, and Tianjin Key Laboratory of Micro-Scale Optical Information Science and Technology, Nankai University, Tianjin 300071, P.R. China
| | - Yang Zhang
- Institute of Modern Optics, and Tianjin Key Laboratory of Micro-Scale Optical Information Science and Technology, Nankai University, Tianjin 300071, P.R. China
| | - Weihua Tang
- State Key Laboratory of Information Photonics and Optical Communications, and School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, P.R. China
| | - Zhenping Wu
- State Key Laboratory of Information Photonics and Optical Communications, and School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, P.R. China
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Qian LX, Gu Z, Huang X, Liu H, Lv Y, Feng Z, Zhang W. Comprehensively Improved Performance of β-Ga 2O 3 Solar-Blind Photodetector Enabled by a Homojunction with Unique Passivation Mechanisms. ACS APPLIED MATERIALS & INTERFACES 2021; 13:40837-40846. [PMID: 34382765 DOI: 10.1021/acsami.1c12615] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Ga2O3-based solar-blind photodetectors have been extensively investigated for a wide range of applications. However, to date, a lot of research has focused on optimizing the epitaxial technique or constructing a heterojunction, and studies concerning surface passivation, a key technique in electronic and optoelectronic devices, are severely lacking. Here, we report an ultrasensitive metal-semiconductor-metal photodetector employing a β-Ga2O3 homojunction structure realized by low-energy surface fluorine plasma treatment, in which an ultrathin fluorine-doped layer served for surface passivation. Without inserting/capping a foreign layer, this strategy utilized fluorine dopants to both passivate local oxygen vacancies and suppress surface chemisorption. The dual effects have opposite impacts on device current magnitude (by suppressing metal/semiconductor junction leakage and inhibiting surface-chemisorption-induced carrier consumption) but dominate in dark and under illumination, respectively. By means of such unique mechanisms, the simultaneous improvement on dark and photo current characteristics was achieved, leading to the sensitivity enhanced by nearly 1 order of magnitude. Accordingly, the 15 min treated sample exhibited striking competitiveness in terms of comprehensive properties, including a dark current as low as 6 pA, a responsivity of 18.43 A/W, an external quantum efficiency approaching 1 × 104%, a specific detectivity of 2.48 × 1014 Jones, and a solar-blind/UV rejection ratio close to 1 × 105. Furthermore, the response speed was effectively accelerated because of the reduction on metal/semiconductor interface trap states. Our findings provide a facile, economical, and contamination-free surface passivation technique, which unlocks the potential for comprehensively improving the performance of β-Ga2O3 solar-blind metal-semiconductor-metal photodetectors.
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Affiliation(s)
- Ling-Xuan Qian
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, P. R. China
| | - Zhiwen Gu
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, P. R. China
| | - Xiaodong Huang
- Key Laboratory of MEMS of the Ministry of Education, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, P. R. China
| | - Hongyu Liu
- National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute, Shijiazhuang 050051, P. R. China
| | - Yuanjie Lv
- National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute, Shijiazhuang 050051, P. R. China
| | - Zhihong Feng
- National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute, Shijiazhuang 050051, P. R. China
| | - Wanli Zhang
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, P. R. China
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Zhang N, Kislyakov IM, Xia C, Qi H, Wang J, Mohamed HF. Anisotropic luminescence and third-order electric susceptibility of Mg-doped gallium oxide under the half-bandgap edge. OPTICS EXPRESS 2021; 29:18587-18600. [PMID: 34154112 DOI: 10.1364/oe.427021] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/06/2021] [Accepted: 05/21/2021] [Indexed: 06/13/2023]
Abstract
Strong anisotropy of photoluminescence of a (100)-cut β-Ga2O3 and a Mg-doped β-Ga2O3 single crystals was found in UV and visible spectral range, the bands of which were attributed to different types of transitions in the samples. Green photoluminescence in the Mg-doped sample was enhanced approximately twice. A remarkable enhancement of two-photon absorption and self-focusing in β-Ga2O3 after doping was revealed by 340-fs laser Z-scanning at 515 nm. The absolute value of complex third order susceptibility χ(3) determined from the study increases by 19 times in [001] lattice direction. Saturable absorption and associated self-defocusing were found in the undoped crystal in the [010] direction, which was explained by the anisotropic excitation of F-centers on intrinsic oxygen defects. This effect falls out of resonance in the Mg-doped crystal. The χ(3) values which are provided by a decrease of bandgap in Mg-doped β-Ga2O3 are χ(3) [001] = 1.85·10-12 esu and χ(3) [010]=χ(3)yyyy = 0.92·10-12 esu. Our result is only one order of magnitude lower than the best characteristic in green demonstrated by a Mg-doped GaN, which encourages subsequent development of Mg-doped β-Ga2O3 as an effective nonlinear optical material in this region.
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