Copper Thiocyanate as an Anode Interfacial Layer for Efficient Near-Infrared Organic Photodetector

Ultranarrow-bandgap small-molecule acceptor enables sensitive SWIR detection and dynamic upconversion imaging

Short-wavelength infrared (SWIR) light detection plays a key role in modern technologies. Emerging solution-processed organic semiconductors are promising for cost-effective, flexible, and large-area SWIR organic photodiodes (OPDs). However, the spectral responsivity (R) and specific detectivity (D*) of SWIR OPDs are restricted by insufficient exciton dissociation and high noise current. In this work, we synthesized an SWIR small molecule with a spectral coverage of 0.3 to 1.3 micrometers peaking at 1100 nanometers. The photodiode, with optimized exciton dissociation, charge injection, and SWIR transmittance, achieves a record high R of 0.53 ampere per watt and D* of 1.71 × 1013 Jones at 1110 nanometers under zero bias. The D* at 1 to 1.2 micrometers surpasses that of the uncooled commercial InGaAs photodiode. Furthermore, large-area semitransparent all-organic upconversion devices integrating the SWIR photodiode realized static and dynamic SWIR-to-visible imaging, along with excellent upconversion efficiency and spatial resolution. This work provides alternative insights for developing sensitive organic SWIR detection.

Advancing Detectivity and Stability of Near-Infrared Organic Photodetectors via a Facile and Efficient Cathode Interlayer

Near-infrared (NIR) organic photodetectors (OPDs) are pivotal in numerous technological applications due to their excellent responsivity within the NIR region. Polyethylenimine ethoxylated (PEIE) has conventionally been employed as an electron transport layer (hole-blocking layer) to suppress dark current (JD) and enhance charge transport. However, the limitations of PEIE in chemical stability, processing conditions, environmental impact, and absorption range have spurred the development of alternative materials. In this study, we introduced a novel solution: a hybrid of sol-gel zinc oxide (ZnO) and N,N'-bis(N,N-dimethylpropan-1-amine oxide)perylene-3,4,9,10-tetracarboxylic diimide (PDINO) as the electron transport layer for NIR-OPDs. Our fabricated OPD exhibited significantly improved responsivity, reduced internal traps, and enhanced charge transfer efficiency. The detectivity, spanning from 400 to 1100 nm, surpassed ∼5 × 1012 Jones, reaching ∼1.1 × 1012 Jones at 1000 nm, accompanied by an increased responsivity of 0.47 A/W. Also, the unpackaged OPD remarkedly demonstrated stable JD and external quantum efficiency (EQE) over 1000 h under dark storage conditions. This innovative approach not only addresses the drawbacks of conventional PEIE-based OPDs but also offers promising avenues for the development of high-performance OPDs in the future.

Plasmonic-Enhanced Tunable Near-Infrared Photoresponse for Narrowband Organic Photodetectors

Near-infrared (NIR) narrowband organic photodetectors (OPDs) can be essential building blocks for emerging applications including wireless optical communication and light detection, but further improvement of their performances remains to be a great challenge. Herein, a light manipulation strategy combining solution-processable gold nanorings (AuNRs)-based hole transporting layer (HTL) and an optical microcavity is proposed to achieve high-performance NIR narrowband OPDs. Optical microcavities with a Fabry-Pérot resonator structure, guided by theoretical simulation, are coupled with PM6:BTP-eC9-based OPDs to exhibit highly tunable NIR selectivity. The further integration of AuNRs array with NIR-customized localized surface plasmon resonance in the HTL of the NIR narrowband OPDs enables evident NIR absorption enhancement, yielding a specific detectivity exceeding 1013 Jones (1.5 × 1012 Jones, calculated from noise spectral density) at 820 nm, along with a finely selective photoresponse (full width at half-maximum of 80 nm) and a 3-fold increase in photocurrent intensity. Finally, the practical application of our OPDs is demonstrated in an NIR communication system. These results reveal the great potential of an appropriate optical design for developing highly performing NIR narrowband OPDs.

Electrical characterization of optical resonance effects in laterally-nanostructured organic photodetectors

Optoelectronic devices based on organic semiconductor materials are on the rise for sensing applications due to their integrability with a variety of substrates - including flexible substrates for wearables. For sensing applications often narrowband absorption is desired with suppression of light at other wavelengths. Here, we investigate narrowband absorption enhancement of organic photodetectors (OPD) with an integrated lateral nanostructure. We show with finite-element simulations, that resonant excitation of low absorbing wavelength regimes allow for up to 3 times the absolute absorption at wavelengths on resonance compared to wavelengths off resonance. We present experimental results for CuPc/C60 OPDs fabricated on grating nanostructures with periods of 350 nm and 400 nm and a grating depth of 140 nm as well as a grating period of 370 nm and grating depths of 30 nm. Angle-resolved transmission spectra clearly show the optical resonance effects. In order to evaluate the electrical resonance effects a measurement system is introduced based on angular laser excitation. An angular resolution of 0.1° is achieved in the analysis of the OPD photocurrent response. Using the measurement setup an increase of the photocurrent by up to 50% is observed for the TE-resonance. It is demonstrated that the resonance wavelength is tuned simply by adjusting the grating period without changes in the layer thicknesses. This opens up new opportunities in realizing pixels of different wavelength response next to each other employing a single active stack design.

CuSCN/Si heterojunction near-infrared photodetector based on micro/nano light-trapping structure

In this paper, high-performance CuSCN/Si heterojunction near-infrared photodetectors were successfully prepared using nanoscale light-trapping optical structures. Various light-trapping structures of ortho-pyramids, inverted pyramids and silicon nanowires were prepared on silicon substrates. Then, CuSCN films were spin-coated on silicon substrates with high crystalline properties for the assembly of CuSCN/Si photodetectors. Their reflectance spectra and interfacial passivation properties were characterized, demonstrating their superiority of light-trapping structures in high light response. Under the irradiation of 980 nm near-infrared light, a maximum responsivity of 2.88 A W^-1at -4 V bias and a specific detectivity of 5.427 × 10¹⁰Jones were obtained in the CuSCN/Si heterojunction photodetectors prepared on planner silicon due to 3.6 eV band gap of CuSCN. The substrates of the light-trapping structure were then applied to the CuSCN/Si heterojunction photodetectors. A maximum responsivity of 10.16 A W^-1and a maximum specific detectivity of 1.001 × 10¹¹Jones were achieved under the 980 nm near-infrared light irradiation and -4 V bias, demonstrating the advanced performance of CuSCN/Si heterojunction photodetectors with micro-nano light-trapping substrates in the field of near-infrared photodetection compared to other silicon-based photodetectors.

Architecturally simple organic photodiodes with highly competitive figures of merit via a facile self-assembly strategy

Photodetectors (PDs) based on organic materials exhibit potential advantages such as low-temperature processing, and superior mechanical properties and form factors. They have seen rapid strides toward achieving performance metrics comparable to inorganic counterparts. Here, a simplified device architecture is employed to realize stable and high-performance organic PDs (OPDs) while further easing the device fabrication process. In contrast to the sequential deposition of the hole blocking layer (HBL) and active layer (conventional 'two-step' processing), the proposed strategy forms a self-assembled HBL and active layer in a 'single-step' process. A high-performance UV-Vis-NIR OPD based on the PM6:BTP-eC9 system is demonstrated using this cost-effective processing strategy. The green solvent processed proof-of-concept device exhibits remarkable responsivity of ∼0.5 A W^-1, lower noise current than conventional two-step OPD, ultrafast rise/fall times of 1.4/1.6 μs (comparable to commercial silicon diode), and a broad linear dynamic range of 140 dB. Importantly, highly stable (light and heat) devices compared to those processed by the conventional method are realized. The broad application potential of this elegant strategy is proven by demonstrating the concept in three representative systems with broadband sensing competence.

Organic photodiodes: device engineering and applications

Organic photodiodes (OPDs) have shown great promise for potential applications in optical imaging, sensing, and communication due to their wide-range tunable photoelectrical properties, low-temperature facile processes, and excellent mechanical flexibility. Extensive research work has been carried out on exploring materials, device structures, physical mechanisms, and processing approaches to improve the performance of OPDs to the level of their inorganic counterparts. In addition, various system prototypes have been built based on the exhibited and attractive features of OPDs. It is vital to link the device optimal design and engineering to the system requirements and examine the existing deficiencies of OPDs towards practical applications, so this review starts from discussions on the required key performance metrics for different envisioned applications. Then the fundamentals of the OPD device structures and operation mechanisms are briefly introduced, and the latest development of OPDs for improving the key performance merits is reviewed. Finally, the trials of OPDs for various applications including wearable medical diagnostics, optical imagers, spectrometers, and light communications are reviewed, and both the promises and challenges are revealed.

Dual-Band, Efficient Self-Powered Organic Photodetectors with Isotype Subphthalocyanine-Based Heterojunctions toward Secure Optical Communications

High-performance heterojunction organic photodetectors (OPDs) are of great significance in optical detecting technology due to their tailorable optoelectronic properties. Herein, we designed and synthesized three n-type subphthalocyanine (SubPc) derivatives PhO-BSubPcF₁₂, CHO-PhO-BSubPcF₁₂, and NO₂-PhO-BSubPcF₁₂ via axial nonhalogen substitution on fluorinated SubPc. These SubPc derivatives exhibit improved intramolecular charge transfer, high electron mobilities, optimized energy levels, and good thermal stability. The novel isotype p-n SubPc heterojunctions are evaluated as photosensitive layers in OPDs, which show a UV-visible dual-band response and self-powered effect. The optimal OPD with Br-BSubPc/NO₂-PhO-BSubPcF₁₂ presents stable and superior performances with a high responsivity (R) of 0.14 A W^-1, a peak external quantum efficiency (EQE) of 30.6%, and an extremely low dark current of 0.92 nA cm^-2 under a 570-595 nm illumination without a bias voltage. It has outperformed most of the reported SubPc-based OPDs. The better interfacial contact of p-n SubPc derivatives leads to a large depletion region with decreased trap densities as well as a low carrier recombination rate, which is conducive to the photoinduced carriers' separation and well-balanced transport, resulting in high device performances. Moreover, a secure communication strategy is successfully demonstrated by dual-band optimal OPD. This work is expected to provide some guidance for molecular engineering and device performance toward multifunctional electronics.

Efficient Optoelectronic Devices Enabled by Near-Infrared Organic Semiconductors with a Photoresponse beyond 1050 nm

Organic optoelectronic devices exhibit distinctive photoresponse to the near-infrared (NIR) light and show great potential in many fields. However, the optoelectronic properties of the existing devices hardly meet the technical requirements of new applications such as energy conversion and health sensing, thus raising the demand to develop high-performance NIR organic semiconductors. To address this issue, a new NIR material, namely, BFIC, is designed and synthesized by inserting fluorothieno[3,4-b]thiophene (FTT) as a π-bridge. Since the introduction of FTT can extend the conjugation, stabilize the quinoid resonant structure, and enhance the intramolecular charge transfer, BFIC displays a broad and intense absorption in the NIR region, ranging from 700 to 1050 nm. As a result, the organic solar cell based on BFIC and a polymer donor PTB7-Th realizes a power conversion efficiency of 10.38%. The semitransparent organic solar cell (OSC) shows a power conversion efficiency of 6.15%, accompanied by an average visible transmittance of 38.79% due to the selective photoresponse in the NIR range. The organic photodetector based on PTB7-Th:BFIC delivers a broad spectral response ranging from 330 to 1030 nm with a specific detectivity over 10¹³ Jones under the self-powered mode, which is one of the highest detectivities among the broad-band organic photodetectors.

High-Performance All-Polymer Photodetectors Enabled by New Random Terpolymer Acceptor with Fine-Tuned Molecular Weight

Reducing the dark current density and enhancing the overall performance of the device is the focal point in research for organic photodetectors. Two novel random terpolymers (P3 and P4) with different molecular weights are synthesized and evaluated as acceptors in bulk heterojunction (BHJ) polymer photodetectors. Compared with known acceptor materials, such as N2200 (P1) and F-N2200 (P2), polymer P4 has a lower lowest unoccupied molecular orbital (LUMO) energy level, favorable morphology, and good miscibility with a donor material J71, which leads to proper phase separation of the blend film and better dissociation of excitons and transport of carriers. Therefore, a considerably low dark current density (Jd) of 1.9 × 10-10 A/cm2 and a high specific detectivity (D*) of 1.8 × 1013 cm Hz1/2/W (also "Jones") at 580 nm under a -0.1 V bias are realized for the P4-based photodetector. More importantly, the device also exhibits a fast response speed (τr/τf = 1.24/1.87 μs) and a wide linear dynamic range (LDR) of 109.2 dB. This work demonstrates that high-performance all-polymer photodetectors with ideal morphology can be realized by random polymer acceptors with a fine-tuned molecular weight.

Narrowband organic photodetectors - towards miniaturized, spectroscopic sensing

Omnipresent quality monitoring in food products, blood-oxygen measurement in lightweight conformal wrist bands, or data-driven automated industrial production: Innovation in many fields is being empowered by sensor technology. Specifically, organic photodetectors (OPDs) promise great advances due to their beneficial properties and low-cost production. Recent research has led to rapid improvement in all performance parameters of OPDs, which are now on-par or better than their inorganic counterparts, such as silicon or indium gallium arsenide photodetectors, in several aspects. In particular, it is possible to directly design OPDs for specific wavelengths. This makes expensive and bulky optical filters obsolete and allows for miniature detector devices. In this review, recent progress of such narrowband OPDs is systematically summarized covering all aspects from narrow-photo-absorbing materials to device architecture engineering. The recent challenges for narrowband OPDs, like achieving high responsivity, low dark current, high response speed, and good dynamic range are carefully addressed. Finally, application demonstrations covering broadband and narrowband OPDs are discussed. Importantly, several exciting research perspectives, which will stimulate further research on organic-semiconductor-based photodetectors, are pointed out at the very end of this review.

Carrier Blocking Layer Materials and Application in Organic Photodetectors

As a promising candidate for next-generation photodetectors, organic photodetectors (OPDs) have gained increasing interest as they offer cost-effective fabrication methods using solution processes and a tunable spectral response range, making them particularly attractive for large area image sensors on lightweight flexible substrates. Carrier blocking layers engineering is very important to the high performance of OPDs that can select a certain charge carriers (holes or electrons) to be collected and suppress another carrier. Carrier blocking layers of OPDs play a critical role in reducing dark current, boosting their efficiency and long-time stability. This Review summarizes various materials for carrier blocking layers and some of the latest progress in OPDs. This provides the reader with guidelines to improve the OPD performance via carrier blocking layers engineering.