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Mo̷lnås H, Paul SJ, Scimeca MR, Mattu N, Zuo J, Parashar N, Li L, Riedo E, Sahu A. Dedoping of Intraband Silver Selenide Colloidal Quantum Dots through Strong Electronic Coupling at Organic/Inorganic Hybrid Interfaces. CRYSTAL GROWTH & DESIGN 2024; 24:2821-2832. [PMID: 38585377 PMCID: PMC10995946 DOI: 10.1021/acs.cgd.3c01474] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/10/2023] [Revised: 03/08/2024] [Accepted: 03/11/2024] [Indexed: 04/09/2024]
Abstract
Colloidal quantum dot (CQD) infrared (IR) photodetectors can be fabricated and operated with larger spectral tunability, fewer limitations in terms of cooling requirements and substrate lattice matching, and at a potentially lower cost than detectors based on traditional bulk materials. Silver selenide (Ag2Se) has emerged as a promising sustainable alternative to current state-of-the-art toxic semiconductors based on lead, cadmium, and mercury operating in the IR. However, an impeding gap in available absorption bandwidth for Ag2Se CQDs exists in the short-wave infrared (SWIR) region due to degenerate doping by the environment, switching the CQDs from intrinsic interband semiconductors in the near-infrared (NIR) to intraband absorbing CQDs in the mid-wave infrared (MWIR). Herein, we show that the small molecular p-type dopant 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ) can be used to extract electrons from the 1Se state of MWIR active Ag2Se CQDs to activate their intrinsic energy gap in the SWIR window. We demonstrate quenching of the MWIR Ag2Se absorbance peak, shifting of nitrile vibrational peaks characteristic of charge-neutral F4-TCNQ, as well as enhanced CQD absorption around ∼2500 nm after doping both in ambient and under air-free conditions. We elucidate the doping mechanism to be one that involves an integer charge transfer akin to doping in semiconducting polymers. These indications of charge transfer are promising milestones on the path to achieving sustainable SWIR Ag2Se CQD photodetectors.
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Affiliation(s)
- Håvard Mo̷lnås
- Department of Chemical and
Biomolecular Engineering, Tandon School of Engineering, New York University, Brooklyn, New York 11201, United States
| | - Shlok Joseph Paul
- Department of Chemical and
Biomolecular Engineering, Tandon School of Engineering, New York University, Brooklyn, New York 11201, United States
| | - Michael R. Scimeca
- Department of Chemical and
Biomolecular Engineering, Tandon School of Engineering, New York University, Brooklyn, New York 11201, United States
| | - Navkawal Mattu
- Department of Chemical and
Biomolecular Engineering, Tandon School of Engineering, New York University, Brooklyn, New York 11201, United States
| | - Jiaqi Zuo
- Department of Chemical and
Biomolecular Engineering, Tandon School of Engineering, New York University, Brooklyn, New York 11201, United States
| | - Nitika Parashar
- Department of Chemical and
Biomolecular Engineering, Tandon School of Engineering, New York University, Brooklyn, New York 11201, United States
| | - Letian Li
- Department of Chemical and
Biomolecular Engineering, Tandon School of Engineering, New York University, Brooklyn, New York 11201, United States
| | - Elisa Riedo
- Department of Chemical and
Biomolecular Engineering, Tandon School of Engineering, New York University, Brooklyn, New York 11201, United States
| | - Ayaskanta Sahu
- Department of Chemical and
Biomolecular Engineering, Tandon School of Engineering, New York University, Brooklyn, New York 11201, United States
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Dang TH, Cavallo M, Khalili A, Dabard C, Bossavit E, Zhang H, Ledos N, Prado Y, Lafosse X, Abadie C, Gacemi D, Ithurria S, Vincent G, Todorov Y, Sirtori C, Vasanelli A, Lhuillier E. Multiresonant Grating to Replace Transparent Conductive Oxide Electrode for Bias Selected Filtering of Infrared Photoresponse. NANO LETTERS 2023; 23:8539-8546. [PMID: 37712683 DOI: 10.1021/acs.nanolett.3c02306] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/16/2023]
Abstract
Optoelectronic devices rely on conductive layers as electrodes, but they usually introduce optical losses that are detrimental to the device performances. While the use of transparent conductive oxides is established in the visible region, these materials show high losses at longer wavelengths. Here, we demonstrate a photodiode based on a metallic grating acting as an electrode. The grating generates a multiresonant photonic structure over the diode stack and allows strong broadband absorption. The obtained device achieves the highest performances reported so far for a midwave infrared nanocrystal-based detector, with external quantum efficiency above 90%, detectivity of 7 × 1011 Jones at 80 K at 5 μm, and a sub-100 ns time response. Furthermore, we demonstrate that combining different gratings with a single diode stack can generate a bias reconfigurable response and develop new functionalities such as band rejection.
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Affiliation(s)
- Tung Huu Dang
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, 4 place Jussieu, 75005 Paris, France
- Laboratoire de Physique de l'Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université Paris Cité, 24 Rue Lhomond, 75005 Paris, France
| | - Mariarosa Cavallo
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, 4 place Jussieu, 75005 Paris, France
| | - Adrien Khalili
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, 4 place Jussieu, 75005 Paris, France
| | - Corentin Dabard
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, 4 place Jussieu, 75005 Paris, France
| | - Erwan Bossavit
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, 4 place Jussieu, 75005 Paris, France
| | - Huichen Zhang
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, 4 place Jussieu, 75005 Paris, France
| | - Nicolas Ledos
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, 4 place Jussieu, 75005 Paris, France
| | - Yoann Prado
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, 4 place Jussieu, 75005 Paris, France
| | - Xavier Lafosse
- Centre de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Université Paris-Saclay, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France
| | - Claire Abadie
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, 4 place Jussieu, 75005 Paris, France
| | - Djamal Gacemi
- Laboratoire de Physique de l'Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université Paris Cité, 24 Rue Lhomond, 75005 Paris, France
| | - Sandrine Ithurria
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI, PSL Research University, Sorbonne Université, CNRS UMR 8213, 10 rue Vauquelin, 75005 Paris, France
| | - Grégory Vincent
- DOTA, ONERA, Université Paris Saclay, 6 Chem. de la Vauve aux Granges, 91120 Palaiseau, France
| | - Yanko Todorov
- Laboratoire de Physique de l'Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université Paris Cité, 24 Rue Lhomond, 75005 Paris, France
| | - Carlo Sirtori
- Laboratoire de Physique de l'Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université Paris Cité, 24 Rue Lhomond, 75005 Paris, France
| | - Angela Vasanelli
- Laboratoire de Physique de l'Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université Paris Cité, 24 Rue Lhomond, 75005 Paris, France
| | - Emmanuel Lhuillier
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, 4 place Jussieu, 75005 Paris, France
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Al Mahfuz MM, Park J, Islam R, Ko DK. Colloidal Ag 2Se intraband quantum dots. Chem Commun (Camb) 2023; 59:10722-10736. [PMID: 37606169 DOI: 10.1039/d3cc02203j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/23/2023]
Abstract
With the emergence of the Internet of Things, wearable electronics, and machine vision, the exponentially growing demands for miniaturization, energy efficiency, and cost-effectiveness have imposed critical requirements on the size, weight, power consumption and cost (SWaP-C) of infrared detectors. To meet this demand, new sensor technologies that can reduce the fabrication cost associated with semiconductor epitaxy and remove the stringent requirement for cryogenic cooling are under active investigation. In the technologically important spectral region of mid-wavelength infrared, intraband colloidal quantum dots are currently at the forefront of this endeavor, with wafer-scale monolithic integration and Auger suppression being the key material capabilities to minimize the sensor's SWaP-C. In this Feature Article, we provide a focused review on the development of sensors based on Ag2Se intraband colloidal quantum dots, a heavy metal-free colloidal nanomaterial that has merits for wide-scale adoption in consumer and industrial sectors.
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Affiliation(s)
- Mohammad Mostafa Al Mahfuz
- Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, New Jersey 07102, USA.
| | - Junsung Park
- Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, New Jersey 07102, USA.
| | - Rakina Islam
- Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, New Jersey 07102, USA.
| | - Dong-Kyun Ko
- Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, New Jersey 07102, USA.
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Qin Y, Guo T, Liu J, Lin T, Wang J, Chu J. Colloidal Quantum Dots in Very-Long-Wave Infrared Detection: Progress, Challenges, and Opportunities. ACS OMEGA 2023; 8:19137-19144. [PMID: 37305230 PMCID: PMC10249132 DOI: 10.1021/acsomega.3c00403] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/19/2023] [Accepted: 04/19/2023] [Indexed: 06/13/2023]
Abstract
The very long wave infrared (VLWIR) is an electromagnetic wave with a wavelength range of 15-30 μm, which plays an important role in missile defense and weather monitoring. This paper briefly introduces the development of intraband absorption of colloidal quantum dots (CQDs) and investigates the possibility of using CQDs to produce VLWIR detectors. We calculated the detectivity of CQDs for VLWIR. The results show that the detectivity is affected by parameters such as quantum dot size, temperature, electron relaxation time, and distance between quantum dots. The theoretical derivation results, combined with the current development status, show that the detection of VLWIR by CQDs is still in the theoretical stage.
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Affiliation(s)
- Yilu Qin
- School of Physical Science and Technology, Shanghai Tech University, 393 Middle Huaxia Road, Shanghai 201210, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
| | - Tianle Guo
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
| | - Jingjing Liu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
| | - Tie Lin
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
| | - Jianlu Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
- Frontier Institute of Chip and System, Institute of Optoelectronics, Shanghai Frontier Base of Intelligent Optoelectronics and Perception, Fudan University, Shanghai 200438, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Hangzhou 330106, China
| | - Junhao Chu
- School of Physical Science and Technology, Shanghai Tech University, 393 Middle Huaxia Road, Shanghai 201210, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
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Zhang H, Peterson JC, Guyot-Sionnest P. Intraband Transition of HgTe Nanocrystals for Long-Wave Infrared Detection at 12 μm. ACS NANO 2023; 17:7530-7538. [PMID: 37027314 DOI: 10.1021/acsnano.2c12636] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
The synthesis of n-doped HgTe colloidal quantum dots was optimized to produce samples with a 1Se-1Pe intraband transition in the long-wave infrared (8-12 μm). The spin-orbit splitting of 1Pe states places the 1Se-1Pe1/2 transition around 10 μm. The narrow line width of 130 cm-1 at 300 K is limited by the size distribution. This narrowing leads to an absorption coefficient about 5 times stronger than is possible with the HgTe CQD interband transition at similar energies. From 300 to 80 K, the intraband transition blueshifts by 90 cm-1, while the interband transition redshifts by 350 cm-1. These shifts are assigned to the temperature dependence of the band structure. With ∼2 electrons/dot doping at 80 K, a photoconductive film of 80 nm thickness on a quarter wave reflector substrate showed a detectivity (D*) of ∼107 Jones at 500 Hz in the 8-12 μm range.
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Affiliation(s)
- Haozhi Zhang
- The James Franck Institute, The University of Chicago, Chicago, Illinois 60637, United States
| | - John C Peterson
- The James Franck Institute, The University of Chicago, Chicago, Illinois 60637, United States
| | - Philippe Guyot-Sionnest
- The James Franck Institute, The University of Chicago, Chicago, Illinois 60637, United States
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Khalili A, Cavallo M, Dang TH, Dabard C, Zhang H, Bossavit E, Abadie C, Prado Y, Xu XZ, Ithurria S, Vincent G, Coinon C, Desplanque L, Lhuillier E. Mid-wave infrared sensitized InGaAs using intraband transition in doped colloidal II-VI nanocrystals. J Chem Phys 2023; 158:094702. [PMID: 36889960 DOI: 10.1063/5.0141328] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/05/2023] Open
Abstract
Narrow bandgap nanocrystals (NCs) are now used as infrared light absorbers, making them competitors to epitaxially grown semiconductors. However, these two types of materials could benefit from one another. While bulk materials are more effective in transporting carriers and give a high degree of doping tunability, NCs offer a larger spectral tunability without lattice-matching constraints. Here, we investigate the potential of sensitizing InGaAs in the mid-wave infrared throughout the intraband transition of self-doped HgSe NCs. Our device geometry enables the design of a photodiode remaining mostly unreported for intraband-absorbing NCs. Finally, this strategy allows for more effective cooling and preserves the detectivity above 108 Jones up to 200 K, making it closer to cryo-free operation for mid-infrared NC-based sensors.
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Affiliation(s)
- Adrien Khalili
- Sorbonne Université, CNRS-UMR 7588, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Mariarosa Cavallo
- Sorbonne Université, CNRS-UMR 7588, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Tung Huu Dang
- Sorbonne Université, CNRS-UMR 7588, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Corentin Dabard
- Sorbonne Université, CNRS-UMR 7588, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Huichen Zhang
- Sorbonne Université, CNRS-UMR 7588, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Erwan Bossavit
- Sorbonne Université, CNRS-UMR 7588, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Claire Abadie
- Sorbonne Université, CNRS-UMR 7588, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Yoann Prado
- Sorbonne Université, CNRS-UMR 7588, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Xiang Zhen Xu
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin, 75005 Paris, France
| | - Sandrine Ithurria
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin, 75005 Paris, France
| | - Grégory Vincent
- ONERA-The French Aerospace Lab, 6, chemin de la Vauve aux Granges, BP 80100, 91123 Palaiseau, France
| | - Christophe Coinon
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520-IEMN, F-59000 Lille, France
| | - Ludovic Desplanque
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520-IEMN, F-59000 Lille, France
| | - Emmanuel Lhuillier
- Sorbonne Université, CNRS-UMR 7588, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
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Hao Q, Zhao X, Tang X, Chen M. The Historical Development of Infrared Photodetection Based on Intraband Transitions. MATERIALS (BASEL, SWITZERLAND) 2023; 16:ma16041562. [PMID: 36837192 PMCID: PMC9960069 DOI: 10.3390/ma16041562] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/04/2023] [Revised: 02/04/2023] [Accepted: 02/09/2023] [Indexed: 05/10/2023]
Abstract
The infrared technology is entering widespread use as it starts fulfilling a growing number of emerging applications, such as smart buildings and automotive sectors. Majority of infrared photodetectors are based on interband transition, which is the energy gap between the valence band and the conduction band. As a result, infrared materials are mainly limited to semi-metal or ternary alloys with narrow-bandgap bulk semiconductors, whose fabrication is complex and expensive. Different from interband transition, intraband transition utilizing the energy gap inside the band allows for a wider choice of materials. In this paper, we mainly discuss the recent developments on intraband infrared photodetectors, including 'bottom to up' devices such as quantum well devices based on the molecular beam epitaxial approach, as well as 'up to bottom' devices such as colloidal quantum dot devices based on the chemical synthesis.
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Affiliation(s)
- Qun Hao
- School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China
- Beijing Key Laboratory for Precision Optoelectronic Measurement Instrument and Technology, Beijing 100081, China
- Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314019, China
| | - Xue Zhao
- School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China
| | - Xin Tang
- School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China
- Beijing Key Laboratory for Precision Optoelectronic Measurement Instrument and Technology, Beijing 100081, China
- Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314019, China
| | - Menglu Chen
- School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China
- Beijing Key Laboratory for Precision Optoelectronic Measurement Instrument and Technology, Beijing 100081, China
- Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314019, China
- Correspondence:
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Hafiz SB, Al Mahfuz MM, Lee S, Ko DK. Midwavelength Infrared p-n Heterojunction Diodes Based on Intraband Colloidal Quantum Dots. ACS APPLIED MATERIALS & INTERFACES 2021; 13:49043-49049. [PMID: 34613686 DOI: 10.1021/acsami.1c14749] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/17/2023]
Abstract
As an emerging member of the colloidal semiconductor quantum dot materials family, intraband quantum dots are being extensively studied for thermal infrared sensing applications. High-performance detectors can be realized using a traditional p-n junction device design; however, the heavily doped nature of intraband quantum dots presents a new challenge in realizing diode devices. In this work, we utilize a trait uniquely available in a colloidal quantum dot material system to overcome this challenge: the ability to blend two different types of quantum dots to control the electrical property of the resulting film. We report on the preparation of binary mixture films containing midwavelength infrared Ag2Se intraband quantum dots and the fabrication of p-n heterojunction diodes with strong rectifying characteristics. The peak specific detectivity at 4.5 μm was measured to be 107 Jones at room temperature, which is an orders of magnitude improvement compared to the previous generation of intraband quantum dot detectors.
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Affiliation(s)
- Shihab Bin Hafiz
- Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, New Jersey 07102, United States
| | - Mohammad M Al Mahfuz
- Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, New Jersey 07102, United States
| | - Sunghwan Lee
- School of Engineering Technology, Purdue University, West Lafayette, Indiana 47907, United States
| | - Dong-Kyun Ko
- Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, New Jersey 07102, United States
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