1
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Zhang H, Prado Y, Alchaar R, Lehouelleur H, Cavallo M, Dang TH, Khalili A, Bossavit E, Dabard C, Ledos N, Silly MG, Madouri A, Fournier D, Utterback JK, Pierucci D, Parahyba V, Potet P, Darson D, Ithurria S, Bartłomiej Szafran, Diroll BT, Climente JI, Lhuillier E. Infrared Imaging Using Thermally Stable HgTe/CdS Nanocrystals. Nano Lett 2024. [PMID: 38608158 DOI: 10.1021/acs.nanolett.4c00907] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/14/2024]
Abstract
Transferring nanocrystals (NCs) from the laboratory environment toward practical applications has raised new challenges. HgTe appears as the most spectrally tunable infrared colloidal platform. Its low-temperature synthesis reduces the growth energy cost yet also favors sintering. Once coupled to a read-out circuit, the Joule effect aggregates the particles, leading to a poorly defined optical edge and large dark current. Here, we demonstrate that CdS shells bring the expected thermal stability (no redshift upon annealing, reduced tendency to form amalgams, and preservation of photoconduction after an atomic layer deposition process). The electronic structure of these confined particles is unveiled using k.p self-consistent simulations showing a significant exciton binding energy of ∼200 meV. After shelling, the material displays a p-type behavior that favors the generation of photoconductive gain. The latter is then used to increase the external quantum efficiency of an infrared imager, which now reaches 40% while presenting long-term stability.
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Affiliation(s)
- Huichen Zhang
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, Paris 75005, France
| | - Yoann Prado
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, Paris 75005, France
| | - Rodolphe Alchaar
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, Paris 75005, France
| | - Henri Lehouelleur
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université, CNRS, Paris 75005, France
| | - Mariarosa Cavallo
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, Paris 75005, France
| | - Tung Huu Dang
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, Paris 75005, France
- Laboratoire de Physique de l'Ecole normale supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Sorbonne Paris Cité, Paris 75005, France
| | - Adrien Khalili
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, Paris 75005, France
| | - Erwan Bossavit
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, Paris 75005, France
- Synchrotron SOLEIL, Saint-Aubin 91190, France
| | - Corentin Dabard
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université, CNRS, Paris 75005, France
| | - Nicolas Ledos
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, Paris 75005, France
| | | | - Ali Madouri
- Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Saclay, C2N, Palaiseau 91120, France
| | - Daniele Fournier
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, Paris 75005, France
| | - James K Utterback
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, Paris 75005, France
| | - Debora Pierucci
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, Paris 75005, France
| | - Victor Parahyba
- New Imaging Technologies SA, Verrières le Buisson 91370, France
| | - Pierre Potet
- New Imaging Technologies SA, Verrières le Buisson 91370, France
| | - David Darson
- Laboratoire de Physique de l'Ecole normale supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Sorbonne Paris Cité, Paris 75005, France
| | - Sandrine Ithurria
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université, CNRS, Paris 75005, France
| | - Bartłomiej Szafran
- Faculty of Physics and Applied Computer Science, AGH University, Kraków PL-30-059, Poland
| | - Benjamin T Diroll
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Juan I Climente
- Departament de Quimica Fisica i Analitica, Universitat Jaume I, Castello de la Plana E-12080, Spain
| | - Emmanuel Lhuillier
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, Paris 75005, France
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2
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Dang TH, Cavallo M, Khalili A, Dabard C, Bossavit E, Zhang H, Ledos N, Prado Y, Lafosse X, Abadie C, Gacemi D, Ithurria S, Vincent G, Todorov Y, Sirtori C, Vasanelli A, Lhuillier E. Multiresonant Grating to Replace Transparent Conductive Oxide Electrode for Bias Selected Filtering of Infrared Photoresponse. Nano Lett 2023; 23:8539-8546. [PMID: 37712683 DOI: 10.1021/acs.nanolett.3c02306] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/16/2023]
Abstract
Optoelectronic devices rely on conductive layers as electrodes, but they usually introduce optical losses that are detrimental to the device performances. While the use of transparent conductive oxides is established in the visible region, these materials show high losses at longer wavelengths. Here, we demonstrate a photodiode based on a metallic grating acting as an electrode. The grating generates a multiresonant photonic structure over the diode stack and allows strong broadband absorption. The obtained device achieves the highest performances reported so far for a midwave infrared nanocrystal-based detector, with external quantum efficiency above 90%, detectivity of 7 × 1011 Jones at 80 K at 5 μm, and a sub-100 ns time response. Furthermore, we demonstrate that combining different gratings with a single diode stack can generate a bias reconfigurable response and develop new functionalities such as band rejection.
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Affiliation(s)
- Tung Huu Dang
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, 4 place Jussieu, 75005 Paris, France
- Laboratoire de Physique de l'Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université Paris Cité, 24 Rue Lhomond, 75005 Paris, France
| | - Mariarosa Cavallo
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, 4 place Jussieu, 75005 Paris, France
| | - Adrien Khalili
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, 4 place Jussieu, 75005 Paris, France
| | - Corentin Dabard
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, 4 place Jussieu, 75005 Paris, France
| | - Erwan Bossavit
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, 4 place Jussieu, 75005 Paris, France
| | - Huichen Zhang
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, 4 place Jussieu, 75005 Paris, France
| | - Nicolas Ledos
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, 4 place Jussieu, 75005 Paris, France
| | - Yoann Prado
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, 4 place Jussieu, 75005 Paris, France
| | - Xavier Lafosse
- Centre de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Université Paris-Saclay, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France
| | - Claire Abadie
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, 4 place Jussieu, 75005 Paris, France
| | - Djamal Gacemi
- Laboratoire de Physique de l'Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université Paris Cité, 24 Rue Lhomond, 75005 Paris, France
| | - Sandrine Ithurria
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI, PSL Research University, Sorbonne Université, CNRS UMR 8213, 10 rue Vauquelin, 75005 Paris, France
| | - Grégory Vincent
- DOTA, ONERA, Université Paris Saclay, 6 Chem. de la Vauve aux Granges, 91120 Palaiseau, France
| | - Yanko Todorov
- Laboratoire de Physique de l'Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université Paris Cité, 24 Rue Lhomond, 75005 Paris, France
| | - Carlo Sirtori
- Laboratoire de Physique de l'Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université Paris Cité, 24 Rue Lhomond, 75005 Paris, France
| | - Angela Vasanelli
- Laboratoire de Physique de l'Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université Paris Cité, 24 Rue Lhomond, 75005 Paris, France
| | - Emmanuel Lhuillier
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, 4 place Jussieu, 75005 Paris, France
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3
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Cavallo M, Alchaar R, Bossavit E, Zhang H, Dang TH, Khalili A, Prado Y, Silly MG, Utterback JK, Ithurria S, Dudin P, Avila J, Pierucci D, Lhuillier E. Inside a nanocrystal-based photodiode using photoemission microscopy. Nanoscale 2023. [PMID: 37158270 DOI: 10.1039/d3nr00999h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
As nanocrystal-based devices gain maturity, a comprehensive understanding of their electronic structure is necessary for further optimization. Most spectroscopic techniques typically examine pristine materials and disregard the coupling of the active material to its actual environment, the influence of an applied electric field, and possible illumination effects. Therefore, it is critical to develop tools that can probe device in situ and operando. Here, we explore photoemission microscopy as a tool to unveil the energy landscape of a HgTe NC-based photodiode. We propose a planar diode stack to facilitate surface-sensitive photoemission measurements. We demonstrate that the method gives direct quantification of the diode's built-in voltage. Furthermore, we discuss how it is affected by particle size and illumination. We show that combining SnO2 and Ag2Te as electron and hole transport layers is better suited for extended-short-wave infrared materials than materials with larger bandgaps. We also identify the effect of photodoping over the SnO2 layer and propose a strategy to overcome it. Given its simplicity, the method appears to be of utmost interest for screening diode design strategies.
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Affiliation(s)
- Mariarosa Cavallo
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France.
| | - Rodolphe Alchaar
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France.
| | - Erwan Bossavit
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France.
- Synchrotron SOLEIL, L'Orme des Merisiers, Départementale 128, 91190 Saint-Aubin, France
| | - Huichen Zhang
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France.
| | - Tung Huu Dang
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France.
| | - Adrien Khalili
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France.
| | - Yoann Prado
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France.
| | - Mathieu G Silly
- Synchrotron SOLEIL, L'Orme des Merisiers, Départementale 128, 91190 Saint-Aubin, France
| | - James K Utterback
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France.
| | - Sandrine Ithurria
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin, 75005 Paris, France
| | - Pavel Dudin
- Synchrotron SOLEIL, L'Orme des Merisiers, Départementale 128, 91190 Saint-Aubin, France
| | - José Avila
- Synchrotron SOLEIL, L'Orme des Merisiers, Départementale 128, 91190 Saint-Aubin, France
| | - Debora Pierucci
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France.
| | - Emmanuel Lhuillier
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France.
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4
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Pierini S, Abadie C, Dang TH, Khalili A, Zhang H, Cavallo M, Prado Y, Gallas B, Ithurria S, Sauvage S, Dayen JF, Vincent G, Lhuillier E. Lithium-Ion Glass Gating of HgTe Nanocrystal Film with Designed Light-Matter Coupling. Materials (Basel) 2023; 16:2335. [PMID: 36984214 PMCID: PMC10054404 DOI: 10.3390/ma16062335] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/31/2023] [Revised: 03/01/2023] [Accepted: 03/08/2023] [Indexed: 06/18/2023]
Abstract
Nanocrystals' (NCs) band gap can be easily tuned over the infrared range, making them appealing for the design of cost-effective sensors. Though their growth has reached a high level of maturity, their doping remains a poorly controlled parameter, raising the need for post-synthesis tuning strategies. As a result, phototransistor device geometry offers an interesting alternative to photoconductors, allowing carrier density control. Phototransistors based on NCs that target integrated infrared sensing have to (i) be compatible with low-temperature operation, (ii) avoid liquid handling, and (iii) enable large carrier density tuning. These constraints drive the search for innovative gate technologies beyond traditional dielectric or conventional liquid and ion gel electrolytes. Here, we explore lithium-ion glass gating and apply it to channels made of HgTe narrow band gap NCs. We demonstrate that this all-solid gate strategy is compatible with large capacitance up to 2 µF·cm-2 and can be operated over a broad range of temperatures (130-300 K). Finally, we tackle an issue often faced by NC-based phototransistors:their low absorption; from a metallic grating structure, we combined two resonances and achieved high responsivity (10 A·W-1 or an external quantum efficiency of 500%) over a broadband spectral range.
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Affiliation(s)
- Stefano Pierini
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, 75005 Paris, France
| | - Claire Abadie
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, 75005 Paris, France
- ONERA-The French Aerospace Lab, 6 Chemin de la Vauve aux Granges, 91123 Palaiseau, France
| | - Tung Huu Dang
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, 75005 Paris, France
| | - Adrien Khalili
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, 75005 Paris, France
| | - Huichen Zhang
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, 75005 Paris, France
| | - Mariarosa Cavallo
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, 75005 Paris, France
| | - Yoann Prado
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, 75005 Paris, France
| | - Bruno Gallas
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, 75005 Paris, France
| | - Sandrine Ithurria
- Laboratoire de Physique et d’Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université, CNRS, 10 Rue Vauquelin, 75005 Paris, France
| | - Sébastien Sauvage
- CNRS, Centre de Nanosciences et de Nanotechnologies, Université Paris-Saclay, 91120 Palaiseau, France
| | - Jean Francois Dayen
- IPCMS-CNRS, Université de Strasbourg, 23 Rue du Loess, 67034 Strasbourg, France
- Institut Universitaire de France, 1 Rue Descartes, CEDEX 05, 75231 Paris, France
| | - Grégory Vincent
- ONERA-The French Aerospace Lab, 6 Chemin de la Vauve aux Granges, 91123 Palaiseau, France
| | - Emmanuel Lhuillier
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, 75005 Paris, France
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Khalili A, Cavallo M, Dang TH, Dabard C, Zhang H, Bossavit E, Abadie C, Prado Y, Xu XZ, Ithurria S, Vincent G, Coinon C, Desplanque L, Lhuillier E. Mid-wave infrared sensitized InGaAs using intraband transition in doped colloidal II-VI nanocrystals. J Chem Phys 2023; 158:094702. [PMID: 36889960 DOI: 10.1063/5.0141328] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/05/2023] Open
Abstract
Narrow bandgap nanocrystals (NCs) are now used as infrared light absorbers, making them competitors to epitaxially grown semiconductors. However, these two types of materials could benefit from one another. While bulk materials are more effective in transporting carriers and give a high degree of doping tunability, NCs offer a larger spectral tunability without lattice-matching constraints. Here, we investigate the potential of sensitizing InGaAs in the mid-wave infrared throughout the intraband transition of self-doped HgSe NCs. Our device geometry enables the design of a photodiode remaining mostly unreported for intraband-absorbing NCs. Finally, this strategy allows for more effective cooling and preserves the detectivity above 108 Jones up to 200 K, making it closer to cryo-free operation for mid-infrared NC-based sensors.
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Affiliation(s)
- Adrien Khalili
- Sorbonne Université, CNRS-UMR 7588, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Mariarosa Cavallo
- Sorbonne Université, CNRS-UMR 7588, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Tung Huu Dang
- Sorbonne Université, CNRS-UMR 7588, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Corentin Dabard
- Sorbonne Université, CNRS-UMR 7588, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Huichen Zhang
- Sorbonne Université, CNRS-UMR 7588, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Erwan Bossavit
- Sorbonne Université, CNRS-UMR 7588, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Claire Abadie
- Sorbonne Université, CNRS-UMR 7588, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Yoann Prado
- Sorbonne Université, CNRS-UMR 7588, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Xiang Zhen Xu
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin, 75005 Paris, France
| | - Sandrine Ithurria
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin, 75005 Paris, France
| | - Grégory Vincent
- ONERA-The French Aerospace Lab, 6, chemin de la Vauve aux Granges, BP 80100, 91123 Palaiseau, France
| | - Christophe Coinon
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520-IEMN, F-59000 Lille, France
| | - Ludovic Desplanque
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520-IEMN, F-59000 Lille, France
| | - Emmanuel Lhuillier
- Sorbonne Université, CNRS-UMR 7588, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
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6
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Cavallo M, Bossavit E, Zhang H, Dabard C, Dang TH, Khalili A, Abadie C, Alchaar R, Mastrippolito D, Prado Y, Becerra L, Rosticher M, Silly MG, Utterback JK, Ithurria S, Avila J, Pierucci D, Lhuillier E. Mapping the Energy Landscape from a Nanocrystal-Based Field Effect Transistor under Operation Using Nanobeam Photoemission Spectroscopy. Nano Lett 2023; 23:1363-1370. [PMID: 36692377 DOI: 10.1021/acs.nanolett.2c04637] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
As the field of nanocrystal-based optoelectronics matures, more advanced techniques must be developed in order to reveal the electronic structure of nanocrystals, particularly with device-relevant conditions. So far, most of the efforts have been focused on optical spectroscopy, and electrochemistry where an absolute energy reference is required. Device optimization requires probing not only the pristine material but also the material in its actual environment (i.e., surrounded by a transport layer and an electrode, in the presence of an applied electric field). Here, we explored the use of photoemission microscopy as a strategy for operando investigation of NC-based devices. We demonstrate that the method can be applied to a variety of materials and device geometries. Finally, we show that it provides direct access to the metal-semiconductor interface band bending as well as the distance over which the gate effect propagates in field-effect transistors.
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Affiliation(s)
- Mariarosa Cavallo
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Erwan Bossavit
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
- Synchrotron SOLEIL, L'Orme des Merisiers, Départementale 128, 91190 Saint-Aubin, France
| | - Huichen Zhang
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Corentin Dabard
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin, 75005 Paris, France
| | - Tung Huu Dang
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
- Laboratoire de Physique de l'Ecole normale supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université Paris-Diderot, Sorbonne Paris Cité, 75005 Paris, France
| | - Adrien Khalili
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Claire Abadie
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Rodolphe Alchaar
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Dario Mastrippolito
- Department of Physical and Chemical Sciences (DSFC), University of L'Aquila, Via Vetoio, 67100 L'Aquila, Italy
| | - Yoann Prado
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Loïc Becerra
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Michael Rosticher
- Laboratoire de Physique de l'Ecole normale supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université Paris-Diderot, Sorbonne Paris Cité, 75005 Paris, France
| | - Mathieu G Silly
- Synchrotron SOLEIL, L'Orme des Merisiers, Départementale 128, 91190 Saint-Aubin, France
| | - James K Utterback
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Sandrine Ithurria
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin, 75005 Paris, France
| | - José Avila
- Synchrotron SOLEIL, L'Orme des Merisiers, Départementale 128, 91190 Saint-Aubin, France
| | - Debora Pierucci
- Centre de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Université Paris-Saclay, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France
| | - Emmanuel Lhuillier
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
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7
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Abadie C, Paggi L, Fabas A, Khalili A, Dang TH, Dabard C, Cavallo M, Alchaar R, Zhang H, Prado Y, Bardou N, Dupuis C, Xu XZ, Ithurria S, Pierucci D, Utterback JK, Fix B, Vincent G, Bouchon P, Lhuillier E. Helmholtz Resonator Applied to Nanocrystal-Based Infrared Sensing. Nano Lett 2022; 22:8779-8785. [PMID: 36190814 DOI: 10.1021/acs.nanolett.2c02769] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
While the integration of nanocrystals as an active medium for optoelectronic devices progresses, light management strategies are becoming required. Over recent years, several photonic structures (plasmons, cavities, mirrors, etc.) have been coupled to nanocrystal films to shape the absorption spectrum, tune the directionality, and so on. Here, we explore a photonic equivalent of the acoustic Helmholtz resonator and propose a design that can easily be fabricated. This geometry combines a strong electromagnetic field magnification and a narrow channel width compatible with efficient charge conduction despite hopping conduction. At 80 K, the device reaches a responsivity above 1 A·W-1 and a detectivity above 1011 Jones (3 μm cutoff) while offering a significantly faster time-response than vertical geometry diodes.
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Affiliation(s)
- Claire Abadie
- DOTA, ONERA, Université Paris Saclay, F-91123 Palaiseau, France
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place jussieu, F-75005 Paris, France
| | - Laura Paggi
- DOTA, ONERA, Université Paris Saclay, F-91123 Palaiseau, France
| | - Alice Fabas
- DOTA, ONERA, Université Paris Saclay, F-91123 Palaiseau, France
| | - Adrien Khalili
- DOTA, ONERA, Université Paris Saclay, F-91123 Palaiseau, France
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place jussieu, F-75005 Paris, France
| | - Tung Huu Dang
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place jussieu, F-75005 Paris, France
| | - Corentin Dabard
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place jussieu, F-75005 Paris, France
| | - Mariarosa Cavallo
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place jussieu, F-75005 Paris, France
| | - Rodolphe Alchaar
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place jussieu, F-75005 Paris, France
| | - Huichen Zhang
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place jussieu, F-75005 Paris, France
| | - Yoann Prado
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place jussieu, F-75005 Paris, France
| | - Nathalie Bardou
- Centre de Nanosciences et de Nanotechnologies (C2N), CNRS, Université Paris-Saclay, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France
| | - Christophe Dupuis
- Centre de Nanosciences et de Nanotechnologies (C2N), CNRS, Université Paris-Saclay, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France
| | - Xiang Zhen Xu
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin 75005 Paris, France
| | - Sandrine Ithurria
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin 75005 Paris, France
| | - Debora Pierucci
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place jussieu, F-75005 Paris, France
| | - James K Utterback
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place jussieu, F-75005 Paris, France
| | - Baptiste Fix
- DOTA, ONERA, Université Paris Saclay, F-91123 Palaiseau, France
| | - Grégory Vincent
- DOTA, ONERA, Université Paris Saclay, F-91123 Palaiseau, France
| | - Patrick Bouchon
- DOTA, ONERA, Université Paris Saclay, F-91123 Palaiseau, France
| | - Emmanuel Lhuillier
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place jussieu, F-75005 Paris, France
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8
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Pierini S, Capitani F, Scimeca M, Kozlov S, Pierucci D, Alchaar R, Abadie C, Khalili A, Cavallo M, Dang TH, Zhang H, Bossavit E, Gréboval C, Avila J, Baptiste B, Klotz S, Sahu A, Feuillet-Palma C, Xu XZ, Ouerghi A, Ithurria S, Utterback JK, Sauvage S, Lhuillier E. Vanishing Confinement Regime in Terahertz HgTe Nanocrystals Studied under Extreme Conditions of Temperature and Pressure. J Phys Chem Lett 2022; 13:6919-6926. [PMID: 35867700 DOI: 10.1021/acs.jpclett.2c01636] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
While HgTe nanocrystals (NCs) in the mid-infrared region have reached a high level of maturity, their far-infrared counterparts remain far less studied, raising the need for an in-depth investigation of the material before efficient device integration can be considered. Here, we explore the effect of temperature and pressure on the structural, spectroscopic, and transport properties of HgTe NCs displaying an intraband absorption at 10 THz. The temperature leads to a very weak modulation of the spectrum as opposed to what was observed for strongly confined HgTe NCs. HgTe NC films present ambipolar conduction with a clear prevalence of electron conduction as confirmed by transistor and thermoelectric measurements. Under the application of pressure, the material undergoes phase transitions from the zinc blende to cinnabar phase and later to the rock salt phase which we reveal using joint X-ray diffraction and infrared spectroscopy measurements. We discuss how the pressure existence domain of each phase is affected by the particle size.
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Affiliation(s)
- Stefano Pierini
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, CNRS, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France
| | | | - Michael Scimeca
- Department of Chemical and Biomolecular Engineering, New York University, Brooklyn, New York 11201, United States
| | - Sergei Kozlov
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin, 75005 Paris, France
| | - Debora Pierucci
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, CNRS, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France
| | - Rodolphe Alchaar
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Claire Abadie
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Adrien Khalili
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Mariarosa Cavallo
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Tung Huu Dang
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Huichen Zhang
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Erwan Bossavit
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Charlie Gréboval
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - José Avila
- Synchrotron SOLEIL, Saint-Aubin, BP48, 91190 Saint-Aubin, France
| | - Benoit Baptiste
- Sorbonne Université, CNRS, Institut de Minéralogie, de Physique des Matériaux et de Cosmochimie, IMPMC, F-75005 Paris, France
| | - Stefan Klotz
- Sorbonne Université, CNRS, Institut de Minéralogie, de Physique des Matériaux et de Cosmochimie, IMPMC, F-75005 Paris, France
| | - Ayaskanta Sahu
- Department of Chemical and Biomolecular Engineering, New York University, Brooklyn, New York 11201, United States
| | - Cheryl Feuillet-Palma
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin, 75005 Paris, France
| | - Xiang Zhen Xu
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin, 75005 Paris, France
| | - Abdelkarim Ouerghi
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, CNRS, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France
| | - Sandrine Ithurria
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin, 75005 Paris, France
| | - James K Utterback
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Sebastien Sauvage
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, CNRS, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France
| | - Emmanuel Lhuillier
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
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9
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Chehaibou B, Izquierdo E, Chu A, Abadie C, Cavallo M, Khalili A, Dang TH, Gréboval C, Xu XZ, Ithurria S, Vincent G, Gallas B, Mugny G, Arnaud A, Lhuillier E, Delerue C. The complex optical index of PbS nanocrystal thin films and their use for short wave infrared sensor design. Nanoscale 2022; 14:2711-2721. [PMID: 35112698 DOI: 10.1039/d1nr07770h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
As nanocrystals (NCs) gain maturity, they become central building blocks for optoelectronics in devices such as solar cells and, more recently, infrared focal plane arrays. Now that the proof of concept of these devices has been established, their optimization requires a deeper understanding of their electronic and optical features to engineer their optoelectronic properties accurately. Though PbS NCs have been extensively investigated, the complex optical index of PbS NC thin films remains mostly unknown. Some previous works have unveiled the optical index for this type of material optimized for solar cells (excitonic peak at 940 nm), but longer wavelengths remain scarce and surface chemistry effects, which are known to be of central importance for layer doping, are simply unexplored. Here, we conduct a systematic investigation of the complex optical index of PbS NC thin films using broadband spectrally resolved ellipsometry. The obtained results are then compared with simulations combining tight-binding (TB) modeling at the NC level and the Bruggeman model to expand the results to the film scale. While TB calculation gives the NC optical indices, we extract the key NC film parameters such as the NC volume fraction and ligand indices by fitting the Bruggeman formula to ellipsometry measurements. We also bring evidence that this joint modeling method can be conducted without the need for ellipsometry data while preserving the main feature of the experimental results. Finally, the unveiled optical indices are used to model the absorption of short-wave infrared diode stacks based on PbS NCs and are relevant for state-of-the-art devices. Our electromagnetic modeling shows that the absorption within the contact is now a major limitation of the current device operated at the telecom wavelength.
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Affiliation(s)
- Bilal Chehaibou
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia, UMR 8520 - IEMN, F-59000 Lille, France.
| | - Eva Izquierdo
- Sorbonne Université, CNRS - UMR 7588, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France.
| | - Audrey Chu
- Sorbonne Université, CNRS - UMR 7588, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France.
| | - Claire Abadie
- ONERA - The French Aerospace Lab, 6, chemin de la Vauve aux Granges, BP 80100, 91123 Palaiseau, France
| | - Mariarosa Cavallo
- Sorbonne Université, CNRS - UMR 7588, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France.
| | - Adrien Khalili
- Sorbonne Université, CNRS - UMR 7588, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France.
| | - Tung Huu Dang
- Sorbonne Université, CNRS - UMR 7588, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France.
| | - Charlie Gréboval
- Sorbonne Université, CNRS - UMR 7588, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France.
| | - Xiang Zhen Xu
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin, 75005 Paris, France
| | - Sandrine Ithurria
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin, 75005 Paris, France
| | - Grégory Vincent
- ONERA - The French Aerospace Lab, 6, chemin de la Vauve aux Granges, BP 80100, 91123 Palaiseau, France
| | - Bruno Gallas
- Sorbonne Université, CNRS - UMR 7588, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France.
| | - Gabriel Mugny
- STMicroelectronics, 12 rue Jules Horowitz, 38019 Grenoble, France
| | - Arthur Arnaud
- STMicroelectronics, 850 rue J. Monnet, 38926 Crolles, France
| | - Emmanuel Lhuillier
- Sorbonne Université, CNRS - UMR 7588, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France.
| | - Christophe Delerue
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia, UMR 8520 - IEMN, F-59000 Lille, France.
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10
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Dang TH, Vasanelli A, Todorov Y, Sirtori C, Prado Y, Chu A, Gréboval C, Khalili A, Cruguel H, Delerue C, Vincent G, Lhuillier E. Bias Tunable Spectral Response of Nanocrystal Array in a Plasmonic Cavity. Nano Lett 2021; 21:6671-6677. [PMID: 34339191 DOI: 10.1021/acs.nanolett.1c02193] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Nanocrystals (NCs) have gained considerable attention for their broadly tunable absorption from the UV to the THz range. Nevertheless, their optical features suffer from a lack of tunability once integrated into optoelectronic devices. Here, we show that bias tunable aspectral response is obtained by coupling a HgTe NC array with a plasmonic resonator. Up to 15 meV blueshift can be achieved from a 3 μm absorbing wavelength structure under a 3 V bias voltage when the NC exciton is coupled with a mode of the resonator. We demonstrate that the blueshift arises from the interplay between hopping transport and inhomogeneous absorption due to the presence of the photonic structure. The observed tunable spectral response is qualitatively reproduced in simulation by introducing a bias-dependent diffusion length in the charge transport. This work expands the realm of existing NC-based devices and paves the way toward light modulators.
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Affiliation(s)
- Tung Huu Dang
- Laboratoire de Physique de l'Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université de Paris, 75005 Paris, France
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, 75005 Paris, France
| | - Angela Vasanelli
- Laboratoire de Physique de l'Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université de Paris, 75005 Paris, France
| | - Yanko Todorov
- Laboratoire de Physique de l'Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université de Paris, 75005 Paris, France
| | - Carlo Sirtori
- Laboratoire de Physique de l'Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université de Paris, 75005 Paris, France
| | - Yoann Prado
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, 75005 Paris, France
| | - Audrey Chu
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, 75005 Paris, France
- ONERA - The French Aerospace Lab, 6, chemin de la Vauve aux Granges, BP 80100, 91123 Palaiseau, France
| | - Charlie Gréboval
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, 75005 Paris, France
| | - Adrien Khalili
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, 75005 Paris, France
| | - Herve Cruguel
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, 75005 Paris, France
| | - Christophe Delerue
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia, UMR 8520 - IEMN, F-59000 Lille, France
| | - Gregory Vincent
- ONERA - The French Aerospace Lab, 6, chemin de la Vauve aux Granges, BP 80100, 91123 Palaiseau, France
| | - Emmanuel Lhuillier
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, 75005 Paris, France
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11
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Chee SS, Gréboval C, Magalhaes DV, Ramade J, Chu A, Qu J, Rastogi P, Khalili A, Dang TH, Dabard C, Prado Y, Patriarche G, Chaste J, Rosticher M, Bals S, Delerue C, Lhuillier E. Correlating Structure and Detection Properties in HgTe Nanocrystal Films. Nano Lett 2021; 21:4145-4151. [PMID: 33956449 DOI: 10.1021/acs.nanolett.0c04346] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
HgTe nanocrystals (NCs) enable broadly tunable infrared absorption, now commonly used to design light sensors. This material tends to grow under multipodic shapes and does not present well-defined size distributions. Such point generates traps and reduces the particle packing, leading to a reduced mobility. It is thus highly desirable to comprehensively explore the effect of the shape on their performance. Here, we show, using a combination of electron tomography and tight binding simulations, that the charge dissociation is strong within HgTe NCs, but poorly shape dependent. Then, we design a dual-gate field-effect-transistor made of tripod HgTe NCs and use it to generate a planar p-n junction, offering more tunability than its vertical geometry counterpart. Interestingly, the performance of the tripods is higher than sphere ones, and this can be correlated with a stronger Te excess in the case of sphere shapes which is responsible for a higher hole trap density.
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Affiliation(s)
- Sang-Soo Chee
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place Jussieu, 75005 Paris, France
- Nanomaterials and Nanotechnology Center, Korea Institute of Ceramic Engineering and Technology (KICET), 101 Soho-ro, 52851 Jinju-si, Republic of Korea
| | - Charlie Gréboval
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place Jussieu, 75005 Paris, France
| | - Debora Vale Magalhaes
- Electron Microscopy for Materials Science, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
- NANOlab Center of Excellence, University of Antwerp, B-2020 Antwerp, Belgium
| | - Julien Ramade
- Electron Microscopy for Materials Science, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
- NANOlab Center of Excellence, University of Antwerp, B-2020 Antwerp, Belgium
| | - Audrey Chu
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place Jussieu, 75005 Paris, France
| | - Junling Qu
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place Jussieu, 75005 Paris, France
| | - Prachi Rastogi
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place Jussieu, 75005 Paris, France
| | - Adrien Khalili
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place Jussieu, 75005 Paris, France
| | - Tung Huu Dang
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place Jussieu, 75005 Paris, France
- Laboratoire de Physique de l'Ecole normale supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université Paris-Diderot, Sorbonne Paris Cité, 75005 Paris, France
| | - Corentin Dabard
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place Jussieu, 75005 Paris, France
| | - Yoann Prado
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place Jussieu, 75005 Paris, France
| | - Gilles Patriarche
- Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Saclay, C2N, Palaiseau 2110, France
| | - Julien Chaste
- Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Saclay, C2N, Palaiseau 2110, France
| | - Michael Rosticher
- Laboratoire de Physique de l'Ecole normale supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université Paris-Diderot, Sorbonne Paris Cité, 75005 Paris, France
| | - Sara Bals
- Electron Microscopy for Materials Science, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
- NANOlab Center of Excellence, University of Antwerp, B-2020 Antwerp, Belgium
| | - Christophe Delerue
- Université Lille, CNRS, Centrale Lille, Université Polytechnique Hauts-de-France, Junia, UMR 8520 - IEMN F-59000 Lille, France
| | - Emmanuel Lhuillier
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place Jussieu, 75005 Paris, France
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