1
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Xia K, Gao XD, Fei GT, Xu SH, Liang YF, Qu XX. High-Performance Visible to Mid-Infrared Photodetectors Based on HgTe Colloidal Quantum Dots under Room Temperature. ACS Appl Mater Interfaces 2024. [PMID: 38669621 DOI: 10.1021/acsami.4c00641] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/28/2024]
Abstract
HgTe colloidal quantum dots (CQDs) are one of few materials that can realize near-to-midwave infrared photodetection. And the quality of HgTe CQD directly affects the performance of photodetection. In this work, we optimize the method of synthesizing HgTe CQDs to reduce the defect concentration, therefore improving the photoelectric properties. The photodetector based on HeTe CQD can respond to the light from the visible to mid-infrared band. Notably, a photoresponse to 4000 nm light at room temperature is realized. The responsivity and detectivity are 90.6 mA W-1 and 6.9 × 107 Jones under 1550 nm light illumination, which are better than these of most reported HgTe CQD photodetectors. The response speed reaches a magnitude of microseconds with a rising time of τr = 1.9 μs and a falling time of τf = 1.5 μs at 10 kHz under 1550 nm light illumination.
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Affiliation(s)
- Kai Xia
- Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, Anhui 230031, PR China
- University of Science and Technology of China, Hefei, Anhui 230026, PR China
| | - Xu Dong Gao
- Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, Anhui 230031, PR China
| | - Guang Tao Fei
- Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, Anhui 230031, PR China
| | - Shao Hui Xu
- Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, Anhui 230031, PR China
| | - Yi Fei Liang
- Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, Anhui 230031, PR China
- University of Science and Technology of China, Hefei, Anhui 230026, PR China
| | - Xiao Xuan Qu
- Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, Anhui 230031, PR China
- University of Science and Technology of China, Hefei, Anhui 230026, PR China
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2
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Zhang H, Prado Y, Alchaar R, Lehouelleur H, Cavallo M, Dang TH, Khalili A, Bossavit E, Dabard C, Ledos N, Silly MG, Madouri A, Fournier D, Utterback JK, Pierucci D, Parahyba V, Potet P, Darson D, Ithurria S, Bartłomiej Szafran, Diroll BT, Climente JI, Lhuillier E. Infrared Imaging Using Thermally Stable HgTe/CdS Nanocrystals. Nano Lett 2024. [PMID: 38608158 DOI: 10.1021/acs.nanolett.4c00907] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/14/2024]
Abstract
Transferring nanocrystals (NCs) from the laboratory environment toward practical applications has raised new challenges. HgTe appears as the most spectrally tunable infrared colloidal platform. Its low-temperature synthesis reduces the growth energy cost yet also favors sintering. Once coupled to a read-out circuit, the Joule effect aggregates the particles, leading to a poorly defined optical edge and large dark current. Here, we demonstrate that CdS shells bring the expected thermal stability (no redshift upon annealing, reduced tendency to form amalgams, and preservation of photoconduction after an atomic layer deposition process). The electronic structure of these confined particles is unveiled using k.p self-consistent simulations showing a significant exciton binding energy of ∼200 meV. After shelling, the material displays a p-type behavior that favors the generation of photoconductive gain. The latter is then used to increase the external quantum efficiency of an infrared imager, which now reaches 40% while presenting long-term stability.
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Affiliation(s)
- Huichen Zhang
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, Paris 75005, France
| | - Yoann Prado
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, Paris 75005, France
| | - Rodolphe Alchaar
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, Paris 75005, France
| | - Henri Lehouelleur
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université, CNRS, Paris 75005, France
| | - Mariarosa Cavallo
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, Paris 75005, France
| | - Tung Huu Dang
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, Paris 75005, France
- Laboratoire de Physique de l'Ecole normale supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Sorbonne Paris Cité, Paris 75005, France
| | - Adrien Khalili
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, Paris 75005, France
| | - Erwan Bossavit
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, Paris 75005, France
- Synchrotron SOLEIL, Saint-Aubin 91190, France
| | - Corentin Dabard
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université, CNRS, Paris 75005, France
| | - Nicolas Ledos
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, Paris 75005, France
| | | | - Ali Madouri
- Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Saclay, C2N, Palaiseau 91120, France
| | - Daniele Fournier
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, Paris 75005, France
| | - James K Utterback
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, Paris 75005, France
| | - Debora Pierucci
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, Paris 75005, France
| | - Victor Parahyba
- New Imaging Technologies SA, Verrières le Buisson 91370, France
| | - Pierre Potet
- New Imaging Technologies SA, Verrières le Buisson 91370, France
| | - David Darson
- Laboratoire de Physique de l'Ecole normale supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Sorbonne Paris Cité, Paris 75005, France
| | - Sandrine Ithurria
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université, CNRS, Paris 75005, France
| | - Bartłomiej Szafran
- Faculty of Physics and Applied Computer Science, AGH University, Kraków PL-30-059, Poland
| | - Benjamin T Diroll
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Juan I Climente
- Departament de Quimica Fisica i Analitica, Universitat Jaume I, Castello de la Plana E-12080, Spain
| | - Emmanuel Lhuillier
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, Paris 75005, France
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3
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Savchenko M, Kozlov DA, Vasilev N, Mikhailov N, Dvoretsky SA, Kvon ZD. Transport properties of a 1000-nm HgTe film: the interplay of surface and bulk carriers. J Phys Condens Matter 2023; 35. [PMID: 37187189 DOI: 10.1088/1361-648x/acd5a2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/17/2023] [Accepted: 05/15/2023] [Indexed: 05/17/2023]
Abstract
We report on systematic study of transport properties of a 1000-nm HgTe film. Unlike thinner and strained HgTe films, which are known as high-quality three-dimensional (3D) topological insulators, the film under study is much thicker than the limit of pseudomorphic growth of HgTe on a CdTe substrate. Therefore, it is expected to be fully relaxed and has the band structure of bulk HgTe, i.e., a zero gap semiconductor. Additionally, the system is characterized by the bands inversion, so that the two-dimensional (2D) topological surface states are expected to exist. To check this claim we studied classical and quantum transport response of the system. We demonstrate that by tuning the top-gate voltage one can change the electron-dominating transport to the hole one. The highest electron mobility is found to be more than 300 × 103 cm2/Vs. The system exhibits Shubnikov-de Haas (SdH) oscillations with a complicated pattern and shows up to 5 independent frequencies in corresponding Fourier spectra. They are attributed to the topological surface states, Volkov-Pankratov states and spin-degenerate bulk states in the accumulation layer near the gate. The observed peculiarities of the quantum transport are the strong SdH oscillations of the Hall resistance, and the suppressed oscillatory response of the topological surface states.
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Affiliation(s)
| | - D A Kozlov
- Institute of Semiconductor Physics, 630090 Novosibirsk, Novosibirsk, 630090, RUSSIAN FEDERATION
| | - Nikita Vasilev
- Rzhanov Institute of Semiconductor Physics SB RAS, 630090 Novosibirsk, Russia, Novosibirsk, Novosibirskaja, 630090, RUSSIAN FEDERATION
| | - N Mikhailov
- SB RAS, Institute of Semiconductor Physics, 630090 Novosibirsk, Novosibirsk, 630090, RUSSIAN FEDERATION
| | - Sergey Alekseevich Dvoretsky
- Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 630090 Novosibirsk, Novosibirsk, 630090, RUSSIAN FEDERATION
| | - Z D Kvon
- SB RAS, Institute of Semiconductor Physics, 630090 Novosibirsk, Novosibirsk, 630090, RUSSIAN FEDERATION
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4
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Peterson JC, Guyot-Sionnest P. Room-Temperature 15% Efficient Mid-Infrared HgTe Colloidal Quantum Dot Photodiodes. ACS Appl Mater Interfaces 2023; 15:19163-19169. [PMID: 37022942 DOI: 10.1021/acsami.3c00487] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Mid-infrared HgTe colloidal quantum dot photovoltaic devices previously achieved background-limited infrared photodetection at cryogenic temperatures but also decreased from 20 to 1% efficiency from 150 to 300 K. The reduced quantum efficiency was tentatively attributed to the carrier diffusion length being much shorter than the device thickness of ∼400 nm at room temperature. Here, the carrier diffusion length is measured and is found to peak at 215 nm at 200 K and decrease only to 180 nm at 295 K. It is therefore not the cause of the much larger reduced quantum efficiency. Instead, it is shown that the efficiency drops due to the series resistance. With the device size reduced to 50 by 50 μm, the room-temperature quantum efficiency reaches 10 and 15% for HgTe colloidal quantum dot devices with 2400 cm-1 (4.2 μm) and 2675 cm-1 (3.7 μm) cutoff, respectively. These small-area devices achieve background-limited photodetection at 150 K and a detectivity above 109 Jones at room temperature with a cutoff at 2675 cm-1 (3.7 μm).
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Affiliation(s)
- John C Peterson
- James Franck Institute, The University of Chicago, 929 E 57th Street, Chicago, Illinois 60627, United States
| | - Philippe Guyot-Sionnest
- James Franck Institute, The University of Chicago, 929 E 57th Street, Chicago, Illinois 60627, United States
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5
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Pierini S, Abadie C, Dang TH, Khalili A, Zhang H, Cavallo M, Prado Y, Gallas B, Ithurria S, Sauvage S, Dayen JF, Vincent G, Lhuillier E. Lithium-Ion Glass Gating of HgTe Nanocrystal Film with Designed Light-Matter Coupling. Materials (Basel) 2023; 16:2335. [PMID: 36984214 PMCID: PMC10054404 DOI: 10.3390/ma16062335] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/31/2023] [Revised: 03/01/2023] [Accepted: 03/08/2023] [Indexed: 06/18/2023]
Abstract
Nanocrystals' (NCs) band gap can be easily tuned over the infrared range, making them appealing for the design of cost-effective sensors. Though their growth has reached a high level of maturity, their doping remains a poorly controlled parameter, raising the need for post-synthesis tuning strategies. As a result, phototransistor device geometry offers an interesting alternative to photoconductors, allowing carrier density control. Phototransistors based on NCs that target integrated infrared sensing have to (i) be compatible with low-temperature operation, (ii) avoid liquid handling, and (iii) enable large carrier density tuning. These constraints drive the search for innovative gate technologies beyond traditional dielectric or conventional liquid and ion gel electrolytes. Here, we explore lithium-ion glass gating and apply it to channels made of HgTe narrow band gap NCs. We demonstrate that this all-solid gate strategy is compatible with large capacitance up to 2 µF·cm-2 and can be operated over a broad range of temperatures (130-300 K). Finally, we tackle an issue often faced by NC-based phototransistors:their low absorption; from a metallic grating structure, we combined two resonances and achieved high responsivity (10 A·W-1 or an external quantum efficiency of 500%) over a broadband spectral range.
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Affiliation(s)
- Stefano Pierini
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, 75005 Paris, France
| | - Claire Abadie
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, 75005 Paris, France
- ONERA-The French Aerospace Lab, 6 Chemin de la Vauve aux Granges, 91123 Palaiseau, France
| | - Tung Huu Dang
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, 75005 Paris, France
| | - Adrien Khalili
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, 75005 Paris, France
| | - Huichen Zhang
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, 75005 Paris, France
| | - Mariarosa Cavallo
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, 75005 Paris, France
| | - Yoann Prado
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, 75005 Paris, France
| | - Bruno Gallas
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, 75005 Paris, France
| | - Sandrine Ithurria
- Laboratoire de Physique et d’Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université, CNRS, 10 Rue Vauquelin, 75005 Paris, France
| | - Sébastien Sauvage
- CNRS, Centre de Nanosciences et de Nanotechnologies, Université Paris-Saclay, 91120 Palaiseau, France
| | - Jean Francois Dayen
- IPCMS-CNRS, Université de Strasbourg, 23 Rue du Loess, 67034 Strasbourg, France
- Institut Universitaire de France, 1 Rue Descartes, CEDEX 05, 75231 Paris, France
| | - Grégory Vincent
- ONERA-The French Aerospace Lab, 6 Chemin de la Vauve aux Granges, 91123 Palaiseau, France
| | - Emmanuel Lhuillier
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, 75005 Paris, France
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6
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Shekhar P, Shamim S, Hartinger S, Schlereth R, Hock V, Buhmann H, Kleinlein J, Molenkamp LW. Low-Temperature Atomic Layer Deposition of Hafnium Oxide for Gating Applications. ACS Appl Mater Interfaces 2022; 14:33960-33967. [PMID: 35820660 DOI: 10.1021/acsami.2c06176] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
We present a novel low-temperature (30 °C) atomic layer deposition process for hafnium oxide and apply the layers as gate dielectric to fabricate devices out of the thermally sensitive topological insulator HgTe. The key to achieving self-limiting growth at these low temperatures is the incorporation of sufficiently long purge times ( ≥150 s) in the deposition cycles. We investigate the structural and compositional properties of these thin films using X-ray reflectometry and photoelectron spectroscopy, finding a growth rate of 1.6 Å per cycle and an atomic ratio of Hf/O of 1:1.85. In addition, we report on the transport properties of the microstructured devices, which are much enhanced compared to previous device generations. We determine a relative permittivity of ∼15 for our HfO2 layers. Our process considerably reduces the thermal load of the samples during microfabrication and can be adapted to a broad range of materials, enabling the fabrication of high-quality gate insulators on various temperature-sensitive materials.
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Affiliation(s)
- Pragya Shekhar
- Physikalisches Institut (EP3), Universität Würzburg, Am Hubland, 97074 Würzburg, Germany
- Institute for Topological Insulators, Am Hubland, 97074 Würzburg, Germany
| | - Saquib Shamim
- Physikalisches Institut (EP3), Universität Würzburg, Am Hubland, 97074 Würzburg, Germany
- Institute for Topological Insulators, Am Hubland, 97074 Würzburg, Germany
| | - Simon Hartinger
- Physikalisches Institut (EP3), Universität Würzburg, Am Hubland, 97074 Würzburg, Germany
- Institute for Topological Insulators, Am Hubland, 97074 Würzburg, Germany
| | - Raimund Schlereth
- Physikalisches Institut (EP3), Universität Würzburg, Am Hubland, 97074 Würzburg, Germany
- Institute for Topological Insulators, Am Hubland, 97074 Würzburg, Germany
| | - Volkmar Hock
- Physikalisches Institut (EP3), Universität Würzburg, Am Hubland, 97074 Würzburg, Germany
- Institute for Topological Insulators, Am Hubland, 97074 Würzburg, Germany
| | - Hartmut Buhmann
- Physikalisches Institut (EP3), Universität Würzburg, Am Hubland, 97074 Würzburg, Germany
- Institute for Topological Insulators, Am Hubland, 97074 Würzburg, Germany
| | - Johannes Kleinlein
- Physikalisches Institut (EP3), Universität Würzburg, Am Hubland, 97074 Würzburg, Germany
- Institute for Topological Insulators, Am Hubland, 97074 Würzburg, Germany
| | - Laurens W Molenkamp
- Physikalisches Institut (EP3), Universität Würzburg, Am Hubland, 97074 Würzburg, Germany
- Institute for Topological Insulators, Am Hubland, 97074 Würzburg, Germany
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7
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Gudina SV, Neverov VN, Popov MR, Turutkin KV, Podgornykh SM, Shelushinina NG, Yakunin MV, Mikhailov NN, Dvoretsky SA. Rashba Spin Splitting in HgCdTe Quantum Wells with Inverted and Normal Band Structures. Nanomaterials (Basel) 2022; 12:1238. [PMID: 35407355 DOI: 10.3390/nano12071238] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/03/2022] [Revised: 03/23/2022] [Accepted: 03/31/2022] [Indexed: 02/01/2023]
Abstract
In quantum wells (QWs) formed in HgCdTe/CdHgTe heterosystems with a variable composition of Cd(Hg), Shubnikov-de-Haas (SdH) oscillations are investigated to characterize the Rashba-type spin-orbit coupling in QWs with both a normal and inverted band structure. Several methods of extracting the Rashba spin-splitting at zero magnetic field and their magnetic field dependences from the beatings of SdH oscillations are used for greater reliability. The large and similar Rashba splitting (25–27 meV) is found for different kinds of spectrum, explained by a significant fraction of the p-type wave functions, in both the E1 subband of the sample with a normal spectrum and the H1 subband for the sample with an inverted one.
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8
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Mahler DM, Müller VL, Thienel C, Wiedenmann J, Beugeling W, Buhmann H, Molenkamp LW. Massive and Topological Surface States in Tensile-Strained HgTe. Nano Lett 2021; 21:9869-9874. [PMID: 34812638 DOI: 10.1021/acs.nanolett.1c02456] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Magneto-transport measurements on gated high-mobility heterostructures containing a 60 nm layer of tensile-strained HgTe, a three-dimensional topological insulator, show well-developed Hall quantization from surface states both in the n- as well as in the p-type regime. While the n-type behavior is due to transport in the topological surface state of the material, we find from 8-orbital k·p calculations that the p-type transport results from massive Volkov-Pankratov states. Their formation prevents the Dirac point and thus the p-conducting topological surface state from being accessible in transport experiments. This interpretation is supported by low-field magneto-transport experiments demonstrating the coexistence of n-conducting topological surface states and p-conducting Volkov-Pankratov states at the relevant gate voltages.
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Affiliation(s)
- David M Mahler
- Institute for Topological Insulators and Physikalisches Institut, Experimentelle Physik III, Universität Würzburg, Am Hubland, 97074 Würzburg, Germany
| | - Valentin L Müller
- Institute for Topological Insulators and Physikalisches Institut, Experimentelle Physik III, Universität Würzburg, Am Hubland, 97074 Würzburg, Germany
| | - Cornelius Thienel
- Institute for Topological Insulators and Physikalisches Institut, Experimentelle Physik III, Universität Würzburg, Am Hubland, 97074 Würzburg, Germany
| | - Jonas Wiedenmann
- Institute for Topological Insulators and Physikalisches Institut, Experimentelle Physik III, Universität Würzburg, Am Hubland, 97074 Würzburg, Germany
| | - Wouter Beugeling
- Institute for Topological Insulators and Physikalisches Institut, Experimentelle Physik III, Universität Würzburg, Am Hubland, 97074 Würzburg, Germany
| | - Hartmut Buhmann
- Institute for Topological Insulators and Physikalisches Institut, Experimentelle Physik III, Universität Würzburg, Am Hubland, 97074 Würzburg, Germany
| | - Laurens W Molenkamp
- Institute for Topological Insulators and Physikalisches Institut, Experimentelle Physik III, Universität Würzburg, Am Hubland, 97074 Würzburg, Germany
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9
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Müller VL, Yan Y, Kashuba O, Trauzettel B, Abdelghany M, Kleinlein J, Beugeling W, Buhmann H, Molenkamp LW. Electron-Hole Scattering Limited Transport of Dirac Fermions in a Topological Insulator. Nano Lett 2021; 21:5195-5200. [PMID: 34115500 DOI: 10.1021/acs.nanolett.1c01271] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
We have experimentally investigated the effect of electron temperature on transport in the two-dimensional Dirac surface states of the three-dimensional topological insulator HgTe. We have found that around the minimal conductivity point, where both electrons and holes are present, heating the carriers with a DC current results in a nonmonotonic differential resistance of narrow channels. We have shown that the observed initial increase in resistance can be attributed to electron-hole scattering, while the decrease follows naturally from the change in Fermi energy of the charge carriers. Both effects are governed dominantly by a van Hove singularity in the bulk valence band. The results demonstrate the importance of interband electron-hole scattering in the transport properties of topological insulators.
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Affiliation(s)
- Valentin L Müller
- Institute for Topological Insulators and Experimentelle Physik III, Physikalisches Institut, Universität Würzburg, Am Hubland, 97074 Würzburg, Germany
| | - Yuan Yan
- Institute for Topological Insulators and Experimentelle Physik III, Physikalisches Institut, Universität Würzburg, Am Hubland, 97074 Würzburg, Germany
| | - Oleksiy Kashuba
- Theoretische Physik IV, Institut für Theoretische Physik und Astrophysik, Universität Würzburg, 97074 Würzburg, Germany
| | - Björn Trauzettel
- Theoretische Physik IV, Institut für Theoretische Physik und Astrophysik, Universität Würzburg, 97074 Würzburg, Germany
| | - Mohamed Abdelghany
- Institute for Topological Insulators and Experimentelle Physik III, Physikalisches Institut, Universität Würzburg, Am Hubland, 97074 Würzburg, Germany
| | - Johannes Kleinlein
- Institute for Topological Insulators and Experimentelle Physik III, Physikalisches Institut, Universität Würzburg, Am Hubland, 97074 Würzburg, Germany
| | - Wouter Beugeling
- Institute for Topological Insulators and Experimentelle Physik III, Physikalisches Institut, Universität Würzburg, Am Hubland, 97074 Würzburg, Germany
| | - Hartmut Buhmann
- Institute for Topological Insulators and Experimentelle Physik III, Physikalisches Institut, Universität Würzburg, Am Hubland, 97074 Würzburg, Germany
| | - Laurens W Molenkamp
- Institute for Topological Insulators and Experimentelle Physik III, Physikalisches Institut, Universität Würzburg, Am Hubland, 97074 Würzburg, Germany
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10
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Chee SS, Gréboval C, Magalhaes DV, Ramade J, Chu A, Qu J, Rastogi P, Khalili A, Dang TH, Dabard C, Prado Y, Patriarche G, Chaste J, Rosticher M, Bals S, Delerue C, Lhuillier E. Correlating Structure and Detection Properties in HgTe Nanocrystal Films. Nano Lett 2021; 21:4145-4151. [PMID: 33956449 DOI: 10.1021/acs.nanolett.0c04346] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
HgTe nanocrystals (NCs) enable broadly tunable infrared absorption, now commonly used to design light sensors. This material tends to grow under multipodic shapes and does not present well-defined size distributions. Such point generates traps and reduces the particle packing, leading to a reduced mobility. It is thus highly desirable to comprehensively explore the effect of the shape on their performance. Here, we show, using a combination of electron tomography and tight binding simulations, that the charge dissociation is strong within HgTe NCs, but poorly shape dependent. Then, we design a dual-gate field-effect-transistor made of tripod HgTe NCs and use it to generate a planar p-n junction, offering more tunability than its vertical geometry counterpart. Interestingly, the performance of the tripods is higher than sphere ones, and this can be correlated with a stronger Te excess in the case of sphere shapes which is responsible for a higher hole trap density.
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Affiliation(s)
- Sang-Soo Chee
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place Jussieu, 75005 Paris, France
- Nanomaterials and Nanotechnology Center, Korea Institute of Ceramic Engineering and Technology (KICET), 101 Soho-ro, 52851 Jinju-si, Republic of Korea
| | - Charlie Gréboval
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place Jussieu, 75005 Paris, France
| | - Debora Vale Magalhaes
- Electron Microscopy for Materials Science, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
- NANOlab Center of Excellence, University of Antwerp, B-2020 Antwerp, Belgium
| | - Julien Ramade
- Electron Microscopy for Materials Science, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
- NANOlab Center of Excellence, University of Antwerp, B-2020 Antwerp, Belgium
| | - Audrey Chu
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place Jussieu, 75005 Paris, France
| | - Junling Qu
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place Jussieu, 75005 Paris, France
| | - Prachi Rastogi
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place Jussieu, 75005 Paris, France
| | - Adrien Khalili
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place Jussieu, 75005 Paris, France
| | - Tung Huu Dang
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place Jussieu, 75005 Paris, France
- Laboratoire de Physique de l'Ecole normale supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université Paris-Diderot, Sorbonne Paris Cité, 75005 Paris, France
| | - Corentin Dabard
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place Jussieu, 75005 Paris, France
| | - Yoann Prado
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place Jussieu, 75005 Paris, France
| | - Gilles Patriarche
- Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Saclay, C2N, Palaiseau 2110, France
| | - Julien Chaste
- Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Saclay, C2N, Palaiseau 2110, France
| | - Michael Rosticher
- Laboratoire de Physique de l'Ecole normale supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université Paris-Diderot, Sorbonne Paris Cité, 75005 Paris, France
| | - Sara Bals
- Electron Microscopy for Materials Science, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
- NANOlab Center of Excellence, University of Antwerp, B-2020 Antwerp, Belgium
| | - Christophe Delerue
- Université Lille, CNRS, Centrale Lille, Université Polytechnique Hauts-de-France, Junia, UMR 8520 - IEMN F-59000 Lille, France
| | - Emmanuel Lhuillier
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place Jussieu, 75005 Paris, France
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11
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Qu J, Rastogi P, Gréboval C, Lagarde D, Chu A, Dabard C, Khalili A, Cruguel H, Robert C, Xu XZ, Ithurria S, Silly MG, Ferré S, Marie X, Lhuillier E. Electroluminescence from HgTe Nanocrystals and Its Use for Active Imaging. Nano Lett 2020; 20:6185-6190. [PMID: 32662652 DOI: 10.1021/acs.nanolett.0c02557] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Mercury telluride (HgTe) nanocrystals are among the most versatile infrared (IR) materials with the absorption of lowest energy optical absorption which can be tuned from the visible to the terahertz range. Therefore, they have been extensively considered as near IR emitters and as absorbers for low-cost IR detectors. However, the electroluminescence of HgTe remains poorly investigated despite its ability to go toward longer wavelengths compared to traditional lead sulfide (PbS). Here, we demonstrate a light-emitting diode (LED) based on an indium tin oxide (ITO)/zinc oxide (ZnO)/ZnO-HgTe/PbS/gold-stacked structure, where the emitting layer consists of a ZnO/HgTe bulk heterojunction which drives the charge balance in the system. This LED has low turn-on voltage, long lifetime, and high brightness. Finally, we conduct short wavelength infrared (SWIR) active imaging, where illumination is obtained from a HgTe NC-based LED, and demonstrate moisture detection.
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Affiliation(s)
- Junling Qu
- Institut des NanoSciences de Paris, Sorbonne Université, CNRS, INSP, F-75005 Paris, France
| | - Prachi Rastogi
- Institut des NanoSciences de Paris, Sorbonne Université, CNRS, INSP, F-75005 Paris, France
| | - Charlie Gréboval
- Institut des NanoSciences de Paris, Sorbonne Université, CNRS, INSP, F-75005 Paris, France
| | - Delphine Lagarde
- INSA-CNRS-UPS, LPCNO, Université de Toulouse, 31000, Toulouse, France
| | - Audrey Chu
- Institut des NanoSciences de Paris, Sorbonne Université, CNRS, INSP, F-75005 Paris, France
| | - Corentin Dabard
- Institut des NanoSciences de Paris, Sorbonne Université, CNRS, INSP, F-75005 Paris, France
| | - Adrien Khalili
- Institut des NanoSciences de Paris, Sorbonne Université, CNRS, INSP, F-75005 Paris, France
| | - Hervé Cruguel
- Institut des NanoSciences de Paris, Sorbonne Université, CNRS, INSP, F-75005 Paris, France
| | - Cédric Robert
- INSA-CNRS-UPS, LPCNO, Université de Toulouse, 31000, Toulouse, France
| | - Xiang Zhen Xu
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin 75005 Paris, France
| | - Sandrine Ithurria
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin 75005 Paris, France
| | - Mathieu G Silly
- Synchrotron-SOLEIL, Saint-Aubin, BP48, F91192 Gif sur Yvette, Cedex, France
| | - Simon Ferré
- New Imaging Technologies SA, 1 impasse de la Noisette 91370 Verrières le Buisson, France
| | - Xavier Marie
- INSA-CNRS-UPS, LPCNO, Université de Toulouse, 31000, Toulouse, France
| | - Emmanuel Lhuillier
- Institut des NanoSciences de Paris, Sorbonne Université, CNRS, INSP, F-75005 Paris, France
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12
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Noumbé UN, Gréboval C, Livache C, Chu A, Majjad H, Parra López LE, Mouafo LDN, Doudin B, Berciaud S, Chaste J, Ouerghi A, Lhuillier E, Dayen JF. Reconfigurable 2D/0D p-n Graphene/ HgTe Nanocrystal Heterostructure for Infrared Detection. ACS Nano 2020; 14:4567-4576. [PMID: 32223229 DOI: 10.1021/acsnano.0c00103] [Citation(s) in RCA: 18] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Nanocrystals are promising building blocks for the development of low-cost infrared optoelectronics. Gating a nanocrystal film in a phototransistor geometry is commonly proposed as a strategy to tune the signal-to-noise ratio by carefully controlling the carrier density within the semiconductor. However, the performance improvement has so far been quite marginal. With metallic electrodes, the gate dependence of the photocurrent follows the gate-induced change of the dark current. Graphene presents key advantages: (i) infrared transparency that allows back-side illumination, (ii) vertical electric field transparency, and (iii) carrier selectivity under gate bias. Here, we investigate a configuration of 2D/0D infrared photodetectors taking advantage of a high capacitance ionic glass gate, large-scale graphene electrodes, and a HgTe nanocrystals layer of high carrier mobility. The introduction of graphene electrodes combined with ionic glass enables one to reconfigure selectively the HgTe nanocrystals and the graphene electrodes between electron-doped (n) and hole-doped (p) states. We unveil that this functionality enables the design a 2D/0D p-n junction that expands throughout the device, with a built-in electric field that assists charge dissociation. We demonstrate that, in this specific configuration, the signal-to-noise ratio for infrared photodetection can be enhanced by 2 orders of magnitude, and that photovoltaic operation can be achieved. The detectivity now reaches 109 Jones, whereas the device only absorbs 8% of the incident light. Additionally, the time response of the device is fast (<10 μs), which strongly contrasts with the slow response commonly observed for 2D/0D mixed-dimensional heterostructures, where larger photoconduction gains come at the cost of slower response.
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Affiliation(s)
- Ulrich Nguétchuissi Noumbé
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504, 23 rue du Loess, Strasbourg 67034, France
| | - Charlie Gréboval
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, Paris F-75005, France
| | - Clément Livache
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, Paris F-75005, France
| | - Audrey Chu
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, Paris F-75005, France
| | - Hicham Majjad
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504, 23 rue du Loess, Strasbourg 67034, France
| | - Luis E Parra López
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504, 23 rue du Loess, Strasbourg 67034, France
| | - Louis Donald Notemgnou Mouafo
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504, 23 rue du Loess, Strasbourg 67034, France
| | - Bernard Doudin
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504, 23 rue du Loess, Strasbourg 67034, France
| | - Stéphane Berciaud
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504, 23 rue du Loess, Strasbourg 67034, France
- Institut Universitaire de France, 1 rue Descartes, Paris 75231 Cedex 05, France
| | - Julien Chaste
- Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Saclay, C2N, Palaiseau 2110, France
| | - Abdelkarim Ouerghi
- Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Saclay, C2N, Palaiseau 2110, France
| | - Emmanuel Lhuillier
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, Paris F-75005, France
| | - Jean-Francois Dayen
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504, 23 rue du Loess, Strasbourg 67034, France
- Institut Universitaire de France, 1 rue Descartes, Paris 75231 Cedex 05, France
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13
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Chu A, Martinez B, Ferré S, Noguier V, Gréboval C, Livache C, Qu J, Prado Y, Casaretto N, Goubet N, Cruguel H, Dudy L, Silly MG, Vincent G, Lhuillier E. HgTe Nanocrystals for SWIR Detection and Their Integration up to the Focal Plane Array. ACS Appl Mater Interfaces 2019; 11:33116-33123. [PMID: 31426628 DOI: 10.1021/acsami.9b09954] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/15/2023]
Abstract
Infrared applications remain too often a niche market due to their prohibitive cost. Nanocrystals offer an interesting alternative to reach cost disruption especially in the short-wave infrared (SWIR, λ < 1.7 μm) where material maturity is now high. Two families of materials are candidate for SWIR photoconduction: lead and mercury chalcogenides. Lead sulfide typically benefits from all the development made for a wider band gap such as the one made for solar cells, while HgTe takes advantage of the development relative to mid-wave infrared detectors. Here, we make a fair comparison of the two material detection properties in the SWIR and discuss the material stability. At such wavelengths, studies have been mostly focused on PbS rather than on HgTe, therefore we focus in the last part of the discussion on the effect of surface chemistry on the electronic spectrum of HgTe nanocrystals. We unveil that tuning the capping ligands is a viable strategy to adjust the material from the p-type to ambipolar. Finally, HgTe nanocrystals are integrated into multipixel devices to quantize spatial homogeneity and onto read-out circuits to obtain a fast and sensitive infrared laser beam profile.
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Affiliation(s)
- Audrey Chu
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP , F-75005 Paris , France
- ONERA-The French Aerospace Lab , Chemin de la Hunière, BP 80100 , F-91123 Palaiseau , France
| | - Bertille Martinez
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP , F-75005 Paris , France
- Laboratoire de Physique et d'Étude des Matériaux , ESPCI Paris PSL Research University, Sorbonne Université Univ Paris 06, CNRS , 10 rue Vauquelin 75005 Paris , France
| | - Simon Ferré
- New Imaging Technologies SA , 1 impasse de la Noisette 91370 Verrières le Buisson , France
| | - Vincent Noguier
- New Imaging Technologies SA , 1 impasse de la Noisette 91370 Verrières le Buisson , France
| | - Charlie Gréboval
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP , F-75005 Paris , France
| | - Clément Livache
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP , F-75005 Paris , France
- Laboratoire de Physique et d'Étude des Matériaux , ESPCI Paris PSL Research University, Sorbonne Université Univ Paris 06, CNRS , 10 rue Vauquelin 75005 Paris , France
| | - Junling Qu
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP , F-75005 Paris , France
| | - Yoann Prado
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP , F-75005 Paris , France
| | - Nicolas Casaretto
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP , F-75005 Paris , France
| | - Nicolas Goubet
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP , F-75005 Paris , France
- Sorbonne Université, CNRS, De la Molécule aux Nano-objets: Réactivité, Interactions et Spectroscopies, MONARIS , F-75005 Paris , France
| | - Hervé Cruguel
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP , F-75005 Paris , France
| | - Lenart Dudy
- Synchrotron-SOLEIL , Saint-Aubin, BP48 , F91192 Gif sur Yvette Cedex , France
| | - Mathieu G Silly
- Synchrotron-SOLEIL , Saint-Aubin, BP48 , F91192 Gif sur Yvette Cedex , France
| | - Grégory Vincent
- ONERA-The French Aerospace Lab , Chemin de la Hunière, BP 80100 , F-91123 Palaiseau , France
| | - Emmanuel Lhuillier
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP , F-75005 Paris , France
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14
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Gréboval C, Noumbe U, Goubet N, Livache C, Ramade J, Qu J, Chu A, Martinez B, Prado Y, Ithurria S, Ouerghi A, Aubin H, Dayen JF, Lhuillier E. Field-Effect Transistor and Photo-Transistor of Narrow-Band-Gap Nanocrystal Arrays Using Ionic Glasses. Nano Lett 2019; 19:3981-3986. [PMID: 31059646 DOI: 10.1021/acs.nanolett.9b01305] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The gating of nanocrystal films is currently driven by two approaches: either the use of a dielectric such as SiO2 or the use of electrolyte. SiO2 allows fast bias sweeping over a broad range of temperatures but requires a large operating bias. Electrolytes, thanks to large capacitances, lead to the significant reduction of operating bias but are limited to slow and quasi-room-temperature operation. None of these operating conditions are optimal for narrow-band-gap nanocrystal-based phototransistors, for which the necessary large-capacitance gate has to be combined with low-temperature operation. Here, we explore the use of a LaF3 ionic glass as a high-capacitance gating alternative. We demonstrate for the first time the use of such ionic glasses to gate thin films made of HgTe and PbS nanocrystals. This gating strategy allows operation in the 180 to 300 K range of temperatures with capacitance as high as 1 μF·cm-2. We unveil the unique property of ionic glass gate to enable the unprecedented tunability of both magnitude and dynamics of the photocurrent thanks to high charge-doping capability within an operating temperature window relevant for infrared photodetection. We demonstrate that by carefully choosing the operating gate bias, the signal-to-noise ratio can be improved by a factor of 100 and the time response accelerated by a factor of 6. Moreover, the good transparency of LaF3 substrate allows back-side illumination in the infrared range, which is highly valuable for the design of phototransistors.
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Affiliation(s)
- Charlie Gréboval
- Sorbonne Université, CNRS , Institut des NanoSciences de Paris, INSP , F-75005 Paris , France
| | - Ulrich Noumbe
- Université de Strasbourg, CNRS , Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504 , F-67000 Strasbourg , France
| | - Nicolas Goubet
- Sorbonne Université, CNRS , Institut des NanoSciences de Paris, INSP , F-75005 Paris , France
- Laboratoire de Physique et d'Étude des Matériaux , ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213 , 10 rue Vauquelin , 75005 Paris , France
| | - Clément Livache
- Sorbonne Université, CNRS , Institut des NanoSciences de Paris, INSP , F-75005 Paris , France
- Laboratoire de Physique et d'Étude des Matériaux , ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213 , 10 rue Vauquelin , 75005 Paris , France
| | - Julien Ramade
- Sorbonne Université, CNRS , Institut des NanoSciences de Paris, INSP , F-75005 Paris , France
| | - Junling Qu
- Sorbonne Université, CNRS , Institut des NanoSciences de Paris, INSP , F-75005 Paris , France
| | - Audrey Chu
- Sorbonne Université, CNRS , Institut des NanoSciences de Paris, INSP , F-75005 Paris , France
| | - Bertille Martinez
- Sorbonne Université, CNRS , Institut des NanoSciences de Paris, INSP , F-75005 Paris , France
- Laboratoire de Physique et d'Étude des Matériaux , ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213 , 10 rue Vauquelin , 75005 Paris , France
| | - Yoann Prado
- Sorbonne Université, CNRS , Institut des NanoSciences de Paris, INSP , F-75005 Paris , France
| | - Sandrine Ithurria
- Laboratoire de Physique et d'Étude des Matériaux , ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213 , 10 rue Vauquelin , 75005 Paris , France
| | - Abdelkarim Ouerghi
- Centre de Nanosciences et de Nanotechnologies, CNRS , Univ. Paris-Sud, Université Paris-Saclay, C2N-Palaiseau , 91120 Palaiseau , France
| | - Herve Aubin
- Centre de Nanosciences et de Nanotechnologies, CNRS , Univ. Paris-Sud, Université Paris-Saclay, C2N-Palaiseau , 91120 Palaiseau , France
| | - Jean-Francois Dayen
- Université de Strasbourg, CNRS , Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504 , F-67000 Strasbourg , France
| | - Emmanuel Lhuillier
- Sorbonne Université, CNRS , Institut des NanoSciences de Paris, INSP , F-75005 Paris , France
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15
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Bendias K, Shamim S, Herrmann O, Budewitz A, Shekhar P, Leubner P, Kleinlein J, Bocquillon E, Buhmann H, Molenkamp LW. High Mobility HgTe Microstructures for Quantum Spin Hall Studies. Nano Lett 2018; 18:4831-4836. [PMID: 29975844 DOI: 10.1021/acs.nanolett.8b01405] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
The topic of two-dimensional topological insulators has blossomed after the first observation of the quantum spin Hall (QSH) effect in HgTe quantum wells. However, studies have been hindered by the relative fragility of the edge states. Their stability has been a subject of both theoretical and experimental investigation in the past decade. Here, we present a new generation of high quality (Cd,Hg)Te/HgTe-structures based on a new chemical etching method. From magnetotransport measurements on macro- and microscopic Hall bars, we extract electron mobilities μ up to about 400 × 103 cm2/(V s), and the mean free path λmfp becomes comparable to the sample dimensions. The Hall bars show quantized spin Hall conductance, which is remarkably stable up to 15 K. The clean and robust edge states allow us to fabricate high quality side-contacted Josephson junctions, which are significant in the context of topological superconductivity. Our results open up new avenues for fundamental research on QSH effect as well as potential applications in spintronics and topological quantum computation.
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Affiliation(s)
- Kalle Bendias
- Physikalisches Institut (EP3) , Universität Würzburg , Am Hubland, 97074 Würzburg , Germany
| | - Saquib Shamim
- Physikalisches Institut (EP3) , Universität Würzburg , Am Hubland, 97074 Würzburg , Germany
| | - Oliver Herrmann
- Physikalisches Institut (EP3) , Universität Würzburg , Am Hubland, 97074 Würzburg , Germany
| | - Andreas Budewitz
- Physikalisches Institut (EP3) , Universität Würzburg , Am Hubland, 97074 Würzburg , Germany
| | - Pragya Shekhar
- Physikalisches Institut (EP3) , Universität Würzburg , Am Hubland, 97074 Würzburg , Germany
| | - Philipp Leubner
- Physikalisches Institut (EP3) , Universität Würzburg , Am Hubland, 97074 Würzburg , Germany
| | - Johannes Kleinlein
- Physikalisches Institut (EP3) , Universität Würzburg , Am Hubland, 97074 Würzburg , Germany
| | - Erwann Bocquillon
- Physikalisches Institut (EP3) , Universität Würzburg , Am Hubland, 97074 Würzburg , Germany
- Laboratoire Pierre Aigrain, Ecole Normale Supériere, PSL Research University, Sorbonne Université, Université Paris Diderot, Sorbonne Paris Cité, CNRS , 24 rue Lhomond , 75005 Paris , France
| | - Hartmut Buhmann
- Physikalisches Institut (EP3) , Universität Würzburg , Am Hubland, 97074 Würzburg , Germany
| | - Laurens W Molenkamp
- Physikalisches Institut (EP3) , Universität Würzburg , Am Hubland, 97074 Würzburg , Germany
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16
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Abstract
Colloidal quantum dots (CQDs) with a band gap tunable in the mid-wave infrared (MWIR) region provide a cheap alternative to epitaxial commercial photodetectors such as HgCdTe (MCT) and InSb. Photoconductive HgTe CQD devices have demonstrated the potential of CQDs for MWIR photodetection but face limitations in speed and sensitivity. Recently, a proof-of-concept HgTe photovoltaic (PV) detector was realized, achieving background-limited infrared photodetection at cryogenic temperatures. Using a modified PV device architecture, we report up to 2 orders of magnitude improvement in the sensitivity of the HgTe CQD photodetectors. A solid-state cation exchange method was introduced during device fabrication to chemically modify the interface potential, leading to an order of magnitude improvement of external quantum efficiency at room temperature. At 230 K, the HgTe CQD photodetectors reported here achieve a sensitivity of 109 Jones with a cutoff wavelength between 4 and 5 μm, which is comparable to that of commercial photodetectors. In addition to the chemical treatment, a thin-film interference structure was devised using an optical spacer to achieve near unity internal quantum efficiency upon reducing the operating temperature. The enhanced sensitivity of the HgTe CQD photodetectors reported here should motivate interest in a cheap, solution-processed MWIR photodetector for applications extending beyond research and military defense.
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Affiliation(s)
- Matthew M Ackerman
- James Franck Institute , The University of Chicago , 929 E. 57th Street , Chicago , Illinois 60637 , United States
| | - Xin Tang
- James Franck Institute , The University of Chicago , 929 E. 57th Street , Chicago , Illinois 60637 , United States
| | - Philippe Guyot-Sionnest
- James Franck Institute , The University of Chicago , 929 E. 57th Street , Chicago , Illinois 60637 , United States
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17
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Livache C, Goubet N, Martinez B, Jagtap A, Qu J, Ithurria S, Silly MG, Dubertret B, Lhuillier E. Band Edge Dynamics and Multiexciton Generation in Narrow Band Gap HgTe Nanocrystals. ACS Appl Mater Interfaces 2018; 10:11880-11887. [PMID: 29578678 DOI: 10.1021/acsami.8b00153] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/15/2023]
Abstract
Mercury chalcogenide nanocrystals and especially HgTe appear as an interesting platform for the design of low cost mid-infrared (mid-IR) detectors. Nevertheless, their electronic structure and transport properties remain poorly understood, and some critical aspects such as the carrier relaxation dynamics at the band edge have been pushed under the rug. Some of the previous reports on dynamics are setup-limited, and all of them have been obtained using photon energy far above the band edge. These observations raise two main questions: (i) what are the carrier dynamics at the band edge and (ii) should we expect some additional effect (multiexciton generation (MEG)) as such narrow band gap materials are excited far above the band edge? To answer these questions, we developed a high-bandwidth setup that allows us to understand and compare the carrier dynamics resonantly pumped at the band edge in the mid-IR and far above the band edge. We demonstrate that fast (>50 MHz) photoresponse can be obtained even in the mid-IR and that MEG is occurring in HgTe nanocrystal arrays with a threshold around 3 times the band edge energy. Furthermore, the photoresponse can be effectively tuned in magnitude and sign using a phototransistor configuration.
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Affiliation(s)
- Clément Livache
- Sorbonne Université, CNRS , Institut des NanoSciences de Paris, INSP , 75005 Paris , France
- LPEM, ESPCI Paris, PSL Research University, CNRS, Sorbonne Université, 75005 Paris , France
| | - Nicolas Goubet
- Sorbonne Université, CNRS , Institut des NanoSciences de Paris, INSP , 75005 Paris , France
- LPEM, ESPCI Paris, PSL Research University, CNRS, Sorbonne Université, 75005 Paris , France
| | - Bertille Martinez
- Sorbonne Université, CNRS , Institut des NanoSciences de Paris, INSP , 75005 Paris , France
- LPEM, ESPCI Paris, PSL Research University, CNRS, Sorbonne Université, 75005 Paris , France
| | - Amardeep Jagtap
- Sorbonne Université, CNRS , Institut des NanoSciences de Paris, INSP , 75005 Paris , France
| | - Junling Qu
- Sorbonne Université, CNRS , Institut des NanoSciences de Paris, INSP , 75005 Paris , France
| | - Sandrine Ithurria
- LPEM, ESPCI Paris, PSL Research University, CNRS, Sorbonne Université, 75005 Paris , France
| | - Mathieu G Silly
- Synchrotron-SOLEIL , Saint-Aubin BP48 , F91192 Gif sur Yvette Cedex , France
| | - Benoit Dubertret
- LPEM, ESPCI Paris, PSL Research University, CNRS, Sorbonne Université, 75005 Paris , France
| | - Emmanuel Lhuillier
- Sorbonne Université, CNRS , Institut des NanoSciences de Paris, INSP , 75005 Paris , France
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Livache C, Izquierdo E, Martinez B, Dufour M, Pierucci D, Keuleyan S, Cruguel H, Becerra L, Fave JL, Aubin H, Ouerghi A, Lacaze E, Silly MG, Dubertret B, Ithurria S, Lhuillier E. Charge Dynamics and Optolectronic Properties in HgTe Colloidal Quantum Wells. Nano Lett 2017; 17:4067-4074. [PMID: 28598629 DOI: 10.1021/acs.nanolett.7b00683] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
We investigate the electronic and transport properties of HgTe 2D colloidal quantum wells. We demonstrate that the material can be made p- or n-type depending on the capping ligands. In addition to the control of majority carrier type, the surface chemistry also strongly affects the photoconductivity of the material. These transport measurements are correlated with the electronic structure determined by high resolution X-ray photoemission. We attribute the change of majority carriers to the strong hybridization of an n-doped HgS layer resulting from capping the HgTe nanoplatelets by S2- ions. We further investigate the gate and temperature dependence of the photoresponse and its dynamics. We show that the photocurrent rise and fall times can be tuned from 100 μs to 1 ms using the gate bias. Finally, we use time-resolved photoemission spectroscopy as a probe of the transport relaxation to determine if the observed dynamics are limited by a fundamental process such as trapping. These pump probe surface photovoltage measurements show an even faster relaxation in the 100-500 ns range, which suggests that the current performances are rather limited by geometrical factors.
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Affiliation(s)
- Clément Livache
- Institut des NanoSciences de Paris, Sorbonne Universités, UPMC Univ. Paris 06, CNRS-UMR 7588 , 4 place Jussieu, 75005 Paris, France
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-ParisTech, PSL Research University, Sorbonne Université UPMC Univ. Paris 06, CNRS , 10 rue Vauquelin 75005 Paris, France
| | - Eva Izquierdo
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-ParisTech, PSL Research University, Sorbonne Université UPMC Univ. Paris 06, CNRS , 10 rue Vauquelin 75005 Paris, France
| | - Bertille Martinez
- Institut des NanoSciences de Paris, Sorbonne Universités, UPMC Univ. Paris 06, CNRS-UMR 7588 , 4 place Jussieu, 75005 Paris, France
| | - Marion Dufour
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-ParisTech, PSL Research University, Sorbonne Université UPMC Univ. Paris 06, CNRS , 10 rue Vauquelin 75005 Paris, France
| | - Debora Pierucci
- Institut Néel, CNRS-UJF , BP 166, 38042 Grenoble Cedex 9, France
| | - Sean Keuleyan
- Voxtel, Inc., University of Oregon, CAMCOR, 1241 University of Oregon , Eugene, Oregon 97403, United States
| | - Hervé Cruguel
- Institut des NanoSciences de Paris, Sorbonne Universités, UPMC Univ. Paris 06, CNRS-UMR 7588 , 4 place Jussieu, 75005 Paris, France
| | - Loic Becerra
- Institut des NanoSciences de Paris, Sorbonne Universités, UPMC Univ. Paris 06, CNRS-UMR 7588 , 4 place Jussieu, 75005 Paris, France
| | - Jean Louis Fave
- Institut des NanoSciences de Paris, Sorbonne Universités, UPMC Univ. Paris 06, CNRS-UMR 7588 , 4 place Jussieu, 75005 Paris, France
| | - Hervé Aubin
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-ParisTech, PSL Research University, Sorbonne Université UPMC Univ. Paris 06, CNRS , 10 rue Vauquelin 75005 Paris, France
| | - Abdelkarim Ouerghi
- Laboratoire de Photonique et de Nanostructures (CNRS-LPN), Route de Nozay, 91460 Marcoussis, France
| | - Emmanuelle Lacaze
- Institut des NanoSciences de Paris, Sorbonne Universités, UPMC Univ. Paris 06, CNRS-UMR 7588 , 4 place Jussieu, 75005 Paris, France
| | - Mathieu G Silly
- Synchrotron-SOLEIL, Saint-Aubin, BP48, F91192 Gif sur Yvette Cedex, France
| | - Benoit Dubertret
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-ParisTech, PSL Research University, Sorbonne Université UPMC Univ. Paris 06, CNRS , 10 rue Vauquelin 75005 Paris, France
| | - Sandrine Ithurria
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-ParisTech, PSL Research University, Sorbonne Université UPMC Univ. Paris 06, CNRS , 10 rue Vauquelin 75005 Paris, France
| | - Emmanuel Lhuillier
- Institut des NanoSciences de Paris, Sorbonne Universités, UPMC Univ. Paris 06, CNRS-UMR 7588 , 4 place Jussieu, 75005 Paris, France
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