Low-Temperature Atomic Layer Deposition of Hafnium Oxide for Gating Applications

We present a novel low-temperature (30 °C) atomic layer deposition process for hafnium oxide and apply the layers as gate dielectric to fabricate devices out of the thermally sensitive topological insulator HgTe. The key to achieving self-limiting growth at these low temperatures is the incorporation of sufficiently long purge times ( ≥150 s) in the deposition cycles. We investigate the structural and compositional properties of these thin films using X-ray reflectometry and photoelectron spectroscopy, finding a growth rate of 1.6 Å per cycle and an atomic ratio of Hf/O of 1:1.85. In addition, we report on the transport properties of the microstructured devices, which are much enhanced compared to previous device generations. We determine a relative permittivity of ∼15 for our HfO2 layers. Our process considerably reduces the thermal load of the samples during microfabrication and can be adapted to a broad range of materials, enabling the fabrication of high-quality gate insulators on various temperature-sensitive materials.

Dynamical Separation of Bulk and Edge Transport in HgTe-Based 2D Topological Insulators

Topological effects in edge states are clearly visible on short lengths only, thus largely impeding their studies. On larger distances, one may be able to dynamically enhance topological signatures by exploiting the high mobility of edge states with respect to bulk carriers. Our work on microwave spectroscopy highlights the response of the edges which host very mobile carriers, while bulk carriers are drastically slowed down in the gap. Though the edges are denser than expected, we establish that charge relaxation occurs on short timescales and suggest that edge states can be addressed selectively on timescales over which bulk carriers are frozen.

Birth weight at high altitudes in Peru

OBJECTIVE

To determine whether birth weights are lower at high altitudes, and whether gestational age at birth and a population's length of residence mitigate the effect of high altitude.

METHODS

The birth weights of 84,173 neonates recorded in the Peruvian Perinatal Information System Database were analyzed between 1995 and 2002 for the cities of Lima (150 m), Huancayo (3280 m), Cuzco (3400 m), and Juliaca (3800 m).

RESULTS

Birth weight was lower at high altitude, but there was no linear relation between altitude of residence and birth weight. Mean birth weight was higher in Juliaca than in Huancayo. There were no significant differences between the 4 cities regarding birth weights of infants born between 28 and 35 weeks of gestation. However, for infants born between 36 and 42 weeks, birth weight was lower at higher altitudes. This may be due to inadequate maternal oxygenation later in pregnancy at high altitude. In the multivariate analysis, after controlling for maternal age, marital status, parity, body mass index, pre-eclampsia or hemorrhage during pregnancy, and education, as well as sex of the newborn and gestational age at birth, birth weight was lower in all cities located at a higher altitude than Lima. Yet, longer residence at high altitudes may play a protective role. Juliaca (3800 m), where the population has resided the longest, had the lowest reduction in birth weight compared with Lima (150 m); Cuzco had intermediate values; and Huancayo (3280 m), where the population has resided the shortest, had the highest reduction in birth weight.

CONCLUSIONS

Birth weight reduction, which is independent of socioeconomic factors, occurs only in births at term and may be less severe in populations that have resided longer at high altitudes.