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Lee YB, Kang MH, Choi PK, Kim SH, Kim TS, Lee SY, Yoon JB. Sub-10 fJ/bit radiation-hard nanoelectromechanical non-volatile memory. Nat Commun 2023; 14:460. [PMID: 36709346 PMCID: PMC9884203 DOI: 10.1038/s41467-023-36076-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/22/2022] [Accepted: 01/12/2023] [Indexed: 01/30/2023] Open
Abstract
With the exponential growth of the semiconductor industry, radiation-hardness has become an indispensable property of memory devices. However, implementation of radiation-hardened semiconductor memory devices inevitably requires various radiation-hardening technologies from the layout level to the system level, and such technologies incur a significant energy overhead. Thus, there is a growing demand for emerging memory devices that are energy-efficient and intrinsically radiation-hard. Here, we report a nanoelectromechanical non-volatile memory (NEM-NVM) with an ultra-low energy consumption and radiation-hardness. To achieve an ultra-low operating energy of less than 10 [Formula: see text], we introduce an out-of-plane electrode configuration and electrothermal erase operation. These approaches enable the NEM-NVM to be programmed with an ultra-low energy of 2.83 [Formula: see text]. Furthermore, due to its mechanically operating mechanisms and radiation-robust structural material, the NEM-NVM retains its superb characteristics without radiation-induced degradation such as increased leakage current, threshold voltage shift, and unintended bit-flip even after 1 Mrad irradiation.
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Affiliation(s)
- Yong-Bok Lee
- grid.37172.300000 0001 2292 0500School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu Daejeon, 34141 Republic of Korea
| | - Min-Ho Kang
- grid.496766.c0000 0004 0546 0225National NanoFab Center (NNFC), 291 Daehak-ro, Yuseong-gu Daejeon, 34141 Republic of Korea
| | - Pan-Kyu Choi
- grid.37172.300000 0001 2292 0500School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu Daejeon, 34141 Republic of Korea ,Taiwan Semiconductor Manufacturing Company (TSMC) Ltd, Fab 21 Phoenix, AZ USA
| | - Su-Hyun Kim
- grid.37172.300000 0001 2292 0500School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu Daejeon, 34141 Republic of Korea ,grid.419666.a0000 0001 1945 5898SAMSUNG ELECTRONICS Co., Ltd, 1, Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do 18448 Republic of Korea
| | - Tae-Soo Kim
- grid.37172.300000 0001 2292 0500School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu Daejeon, 34141 Republic of Korea
| | - So-Young Lee
- grid.37172.300000 0001 2292 0500School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu Daejeon, 34141 Republic of Korea
| | - Jun-Bo Yoon
- grid.37172.300000 0001 2292 0500School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu Daejeon, 34141 Republic of Korea
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