Two-Dimensional Tetrahex-GeC2: A Material with Tunable Electronic and Optical Properties Combined with Ultrahigh Carrier Mobility

Sn9C15 monolayer with desirable bandgap, high carrier mobilities, and broadband light absorption for photovoltaic devices

Two-dimensional carbon-based materials show considerable promise for applications in a wide range of fields, including aerospace, energy storage, and catalysis, due to their great advantages of abundant carbon resources, relatively low-cost, non-toxicity, and excellent physical and chemical properties. However, their applications in photovoltaics remain limited. Here, we first theoretically predict a stable Sn9C15 monolayer (space group P321). The Sn9C15 monolayer exhibits numerous advantages, which make it an ideal candidate for photovoltaic applications: (1) The Sn9C15 monolayer is a direct bandgap semiconductor with a bandgap of 1.70 eV, which is closer to the optimal bandgap of 1.50 eV for photovoltaic devices; (2) the Sn9C15 monolayer exhibits electron mobilities in excess of 2 × 103 cm2 V-1 s-1; (3) the Sn9C15 monolayer shows a direct bandgap of 1.50 eV under a 3% compressive biaxial strain; (4) the Sn9C15 monolayer shows a benign light absorption in the whole visible region (380-780 nm); (5) the Sn9C15 monolayer possesses an optical bandgap of 0.97 eV and an exciton binding energy of 1.63 eV; and (6) the Sn9C15/TMD heterostructures are predicted to have a power conversion efficiency of 9%-23%. In terms of its formation energy, we expect that the Sn9C15 monolayer will be fabricated similarly to the synthesized Si9C15 monolayer. Importantly, the target bandgap of the Sn9C15 monolayer is achieved by the synergistic mechanism of the crystal lattice spacing and the atomic contribution of band edges (referred to as lattice-band edge synergistic mechanism). We anticipate that this synergistic mechanism will facilitate the design of a great number of new materials with targeted bandgaps.

Effect and mechanism analysis of surface hydrogenation and fluorination on the electronic properties of th-GeC2

A two-dimensional (2D) tetrahex-GeC2 nanosheet demonstrates excellent electronic properties such as a finite direct band gap and high carrier mobilities, as predicted from theoretical calculations. To further expand its potential applications, various strategies can be employed to tailor its electronic properties. These strategies include alloying, strain application, and edge and surface functionalization. This work specifically focuses on the impact of surface functionalization with hydrogen and fluorine adsorption on the 2D tetrahex-GeC2 nanostructures. It was discovered that the electronic properties of these nanostructures undergo significant alterations through surface functionalization by adjusting the adsorption sites and coverage of H/F species. The underlying mechanisms responsible for these property changes have been thoroughly analyzed and discussed in detail. Our calculations, based on density functional theory, reveal that the band gap of tetrahex-GeC2 widens as the surface coverage of H atoms increases. Conversely, the band gap narrows in the case of F adsorption. Additionally, the indirect-direct band gap transition can be triggered through surface functionalization. Such modifications in the electronic band structure are primarily due to the disappearance of the π bond when the C atom is converted from sp2 to sp3 hybridization through the adsorption of surface functionalized species. Furthermore, the results indicate that surface adsorption can regulate the effective mass of carriers, electron affinity, and work function in the 2D tetrahex-GeC2 nanostructure.

Comprehensive understanding of electron mobility and superior performance in sub-10 nm DG ML tetrahex-GeC2 n-type MOSFETs

In this study, we have investigated the electron mobility of monolayered (ML) tetrahex-GeC2 by solving the linearized Boltzmann transport equation (BTE) with the normalized full-band relaxation time approximation (RTA) using density functional theory (DFT). Contrary to what the deformation potential theory (DPT) suggested, the ZA acoustic mode was determined to be the most restrictive for electron mobility, not the LA mode. The electron mobility at 300 K is 803 cm2 (V s)-1, exceeding the 400 cm2 (V s)-1 of MoS2 which was calculated using the same method and measured experimentally. The ab initio quantum transport simulations were performed to assess the performance limits of sub-10 nm DG ML tetrahex-GeC2 n-type MOSFETs, including gate lengths (Lg) of 3 nm, 5 nm, 7 nm, and 9 nm, with the underlap (UL) effect considered for the first two. For both high-performance (HP) and low-power (LP) applications, their on-state currents (Ion) can meet the requirements of similar nodes in the ITRS 2013. In particular, the Ion is more remarkable for HP applications than that of the extensively studied MoS2. For LP applications, the Ion values at Lg of 7 and 9 nm surpass those of arsenene, known for having the largest Ion among 2D semiconductors. Subthreshold swings (SSs) as low as 69/53 mV dec-1 at an Lg of 9 nm were observed for HP/LP applications, and 73 mV dec-1 at an Lg of 5 nm for LP applications, indicating the excellent gate control capability. Moreover, the delay time τ and power dissipation (PDP) at Lg values of 3 nm, 5 nm, 7 nm, and 9 nm are all below the upper limits of the ITRS 2013 HP/LP proximity nodes and are comparable to or lower than those of typical 2D semiconductors. The sub-10 nm DG ML tetrahex-GeC2 n-type MOSFETs can be down-scaled to 9 nm and 5 nm for HP and LP applications, respectively, displaying desirable Ion, delay time τ, and PDP in the ballistic limit, making them a potential choice for sub-10 nm transistors.

The electronic structure of a strongly bound sandwich MoS2-WS2 heterobilayer

First of all, we show that two kinds of sandwich bilayers (BLs) are dynamically, thermally, and mechanically stable, which are degenerate p-type materials with intercalated Ca atoms, i.e., Nb-doped MoS₂ homobilayers (HoBLs) and Nb-doped WS₂-MoS₂ heterobilayers (HtBLs) with 25% Nb content. Specifically, their interlayer bindings are five times stronger than van der Waals interactions in their pristine counterparts. Both of them are semiconductors with indirect band gaps in the visible region within the HSE06 exchange-correlation functional. Depending upon the presence and absence of centrosymmetry, they display interesting spin-valley coupling effects in such a way that opposite hidden spin polarization or opposite spin splitting is observed at opposite k-points. They can be easily engineered into direct gap materials under compressive (>2%) strain along the zigzag direction even with an explicit consideration of giant spin splitting. Under strain, they satisfy thermodynamic conditions for bifunctional catalysis in photocatalytic water splitting. In addition, the photoholes of the BLs can be subjected to lower overpotentials than those of pristine BLs for the oxygen evolution reaction. Electrons and holes in the sandwich HtBL can be separated into different layers under photon irradiation, allowing it to be more efficient than the corresponding HoBL in solar energy harvesting.

A semiconductor Sc2S3 monolayer with ultrahigh carrier mobility for UV blocking filter application

For humans, ultraviolet (UV) light from sun is harmful to our eyes and eye-related cells. This detrimental fact requires scientists to search for a material that can efficiently absorb UV light while allowing lossless transmission of visible light. Using an unbiased first-principles swarm intelligence structure search, we explored two-dimensional (2D) Sc-S crystals and identified a novel Sc₂S₃ monolayer with good thermal and dynamical stability. The optoelectronic property simulations revealed that the Sc₂S₃ monolayer has a wide indirect bandgap (3.05 eV) and possesses an ultrahigh carrier mobility (2.8 × 10³ cm² V^-1 s^-1). Remarkably, it has almost transparent visible light absorption, while it exhibits an ultrahigh absorption coefficient up to × 10⁵ cm^-1 in the ultraviolet region. Via the application of biaxial strain and thickness modulation, the UV light absorption coefficients of Sc₂S₃ can be further improved. These findings manifest an attractive UV blocking optoelectronic characteristic of the Sc₂S₃ configuration as a prototypical nanomaterial for the potential application in UV blocking filters.

A novel two-dimensional transition metal dichalcogenide as water splitting photocatalyst with excellent performances

With the rising demand for renewable energy, photocatalysts are considered the most promising solution to harness solar energy, and the search for photocatalysts with excellent performances remains an urgent task. Here, based on density functional theory (DFT), the photocatalytic properties of MoWS₄ are systematically investigated. The MoWS₄ monolayer and bilayer are demonstrated as semiconductors with indirect band gaps of 2.01 and 1.48 eV. Moreover, they exhibit high and anisotropic light absorption coefficients of up to ∼10⁵ cm⁻¹ in the visible-ultraviolet region. The intrinsic band edge positions could fully satisfy the redox potentials of water without any external adjustment. The electron mobility of MoWS₄ monolayer is 557 cm² V⁻¹s⁻¹, which is seven times higher than MoS₂ monolayer. Hence, MoWS₄ can be regarded as a promising 2D photocatalyst candidate for water splitting.

Two-Dimensional GeC2 with Tunable Electronic and Carrier Transport Properties and a High Current ON/OFF Ratio

In this study, we present that 2D tetrahex-GeC₂ materials possess novel electronic and carrier transport properties based on density functional theory computations combined with the nonequilibrium Green's function method. We show that under the 4% (-4%) in-plane expansion (compression) along the a-direction (b-direction) of the tetrahex-GeC₂ monolayer, the bandgap can be enlarged to a desirable 1.26 eV (1.32 eV), close to that of silicon. The carrier transport properties of both the sub-10 nm tetrahex-GeC₂ monolayer and the bilayer show strong anisotropy within the bias from -1 to 1 V. The current ON (a-direction)/OFF (b-direction) ratio amounts to 10⁵ for the tetrahex-GeC₂ monolayer. A striking negative differential conductance arises with the maximum I_peak/I_valley on the order of 10⁴ under the 4% uniaxial expansion along the b-direction of the tetrahex-GeC₂ monolayer. Overall, the 2D tetrahex-GeC₂ monolayer and bilayer possess highly tunable electronic and carrier transport properties under uniaxial strain, which can be exploited for potential applications in nanoelectronics.

Structural, Electronic, and Optical Properties of Hexagonal XC6 (X=N, P, As, and Sb) Monolayers

Based on first-principles calculations, a novel family of two-dimensional (2D) IV-V compounds, XC₆ (X=N, P, As and Sb), is proposed. These compounds exhibit excellent stability, as determined from the cohesive energies, phonon dispersion analysis, ab initio molecular dynamics (AIMD) simulations, and mechanical properties. In this type of structure, the carbon atom is sp² hybridized, whereas the X (N, P, As and Sb) atom is nonplanar sp³ hybridized with one 2p_z orbital filled with lone pair electrons. NC₆ , PC₆ , AsC₆ and SbC₆ monolayers are intrinsic indirect semiconductors with wide bandgaps of 2.02, 2.36, 2.77, and 2.85 eV (based on HSE06 calculations), respectively. After applying mechanical strain, PC₆ , AsC₆ and SbC₆ monolayers can be transformed from indirect to direct semiconductors. The appropriate bandgaps and well-located band edge positions make XC₆ monolayers potential materials for photocatalytic water splitting. XC₆ family members also have high absorption coefficients (∼10⁵  cm^-1 ) in the ultraviolet region and higher electron mobilities (∼10³  cm²  V^-1  s^-1 ) than many known 2D semiconductors.