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Li M, Liu M, Qi F, Lin FR, Jen AKY. Self-Assembled Monolayers for Interfacial Engineering in Solution-Processed Thin-Film Electronic Devices: Design, Fabrication, and Applications. Chem Rev 2024; 124:2138-2204. [PMID: 38421811 DOI: 10.1021/acs.chemrev.3c00396] [Citation(s) in RCA: 82] [Impact Index Per Article: 82.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/02/2024]
Abstract
Interfacial engineering has long been a vital means of improving thin-film device performance, especially for organic electronics, perovskites, and hybrid devices. It greatly facilitates the fabrication and performance of solution-processed thin-film devices, including organic field effect transistors (OFETs), organic solar cells (OSCs), perovskite solar cells (PVSCs), and organic light-emitting diodes (OLEDs). However, due to the limitation of traditional interfacial materials, further progress of these thin-film devices is hampered particularly in terms of stability, flexibility, and sensitivity. The deadlock has gradually been broken through the development of self-assembled monolayers (SAMs), which possess distinct benefits in transparency, diversity, stability, sensitivity, selectivity, and surface passivation ability. In this review, we first showed the evolution of SAMs, elucidating their working mechanisms and structure-property relationships by assessing a wide range of SAM materials reported to date. A comprehensive comparison of various SAM growth, fabrication, and characterization methods was presented to help readers interested in applying SAM to their works. Moreover, the recent progress of the SAM design and applications in mainstream thin-film electronic devices, including OFETs, OSCs, PVSCs and OLEDs, was summarized. Finally, an outlook and prospects section summarizes the major challenges for the further development of SAMs used in thin-film devices.
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Affiliation(s)
- Mingliang Li
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- Hong Kong Institute for Clean Energy, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Ming Liu
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- Hong Kong Institute for Clean Energy, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Feng Qi
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- Hong Kong Institute for Clean Energy, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Francis R Lin
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- Hong Kong Institute for Clean Energy, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Alex K-Y Jen
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- Hong Kong Institute for Clean Energy, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195, United States
- State Key Laboratory of Marine Pollution, City University of Hong Kong, Kowloon, Hong Kong 999077, China
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Chae YB, Kim SY, Choi HD, Moon DG, Lee KH, Kim CK. Enhancing Efficiency in Inverted Quantum Dot Light-Emitting Diodes through Arginine-Modified ZnO Nanoparticle Electron Injection Layer. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:266. [PMID: 38334536 PMCID: PMC10856329 DOI: 10.3390/nano14030266] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/27/2023] [Revised: 01/22/2024] [Accepted: 01/24/2024] [Indexed: 02/10/2024]
Abstract
Many quantum dot light-emitting diodes (QLEDs) utilize ZnO nanoparticles (NPs) as an electron injection layer (EIL). However, the use of the ZnO NP EIL material often results in a charge imbalance within the quantum dot (QD) emitting layer (EML) and exciton quenching at the interface of the QD EML and ZnO NP EIL. To overcome these challenges, we introduced an arginine (Arg) interlayer (IL) onto the ZnO NP EIL. The Arg IL elevated the work function of ZnO NPs, thereby suppressing electron injection into the QD, leading to an improved charge balance within the QDs. Additionally, the inherent insulating nature of the Arg IL prevented direct contact between QDs and ZnO NPs, reducing exciton quenching and consequently improving device efficiency. An inverted QLED (IQLED) utilizing a 20 nm-thick Arg IL on the ZnO NP EIL exhibited a 2.22-fold increase in current efficiency and a 2.28-fold increase in external quantum efficiency (EQE) compared to an IQLED without an IL. Likewise, the IQLED with a 20 nm-thick Arg IL on the ZnO NP EIL demonstrated a 1.34-fold improvement in current efficiency and a 1.36-fold increase in EQE compared to the IQLED with a 5 nm-thick polyethylenimine IL on ZnO NPs.
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Affiliation(s)
| | | | | | | | - Kyoung-Ho Lee
- Department of Electronic Materials, Devices and Equipment Engineering, Soonchunhyang University, Asan 31538, Republic of Korea; (Y.-B.C.); (S.-Y.K.); (H.-D.C.); (D.-G.M.)
| | - Chang-Kyo Kim
- Department of Electronic Materials, Devices and Equipment Engineering, Soonchunhyang University, Asan 31538, Republic of Korea; (Y.-B.C.); (S.-Y.K.); (H.-D.C.); (D.-G.M.)
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Li R, Wang Y, Chen Y, Zhao J, Wang Y, An J, Lu Y, Chen Y, Lai W, Zhang X, Huang W. Efficient Flexible Fabric-Based Top-Emitting Polymer Light-Emitting Devices for Wearable Electronics. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2305327. [PMID: 37670556 DOI: 10.1002/smll.202305327] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/26/2023] [Revised: 08/12/2023] [Indexed: 09/07/2023]
Abstract
Low-cost fabric-based top-emitting polymer light-emitting devices (Fa-TPLEDs) have aroused increasing attention due to their remarkable potential applications in wearable displays. However, it is still challenging to realize efficient all-solution-processed devices from bottom electrodes to top electrodes with large-scale fabrication. Here, a smooth reflective Ag cathode integrated on fabric by one-step silver mirror reaction and a composite transparent anode of polydimethylsiloxane/silver nanowires/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) via a water-assisted peeling method are presented, both of which possess excellent optoelectrical properties and robust mechanical flexibility. The Fa-TPLEDs are constructed by spin-coating functional layers on the bottom reflective cathodes and laminating the top transparent anodes. The Fa-TPLEDs show a current efficiency of 16.3 cd A-1 , an external quantum efficiency of 4.9% and angle-independent electroluminescence spectra. In addition, the Fa-TPLEDs possess excellent mechanical stability, maintaining a current efficiency of 14.3 cd A-1 after 200 bending cycles at a radius of 4 mm. The results demonstrate that the integration of solution-processed reflective cathodes and transparent anodes sheds light on a new avenue to construct low-cost and efficient fabric-based devices, showing great potential applications in emerging smart flexible/wearable electronics.
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Affiliation(s)
- Ruiqing Li
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, 210023, China
| | - Yeyang Wang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, 210023, China
| | - Yujie Chen
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, 210023, China
| | - Jiaxuan Zhao
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, 210023, China
| | - Yawei Wang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, 210023, China
| | - Jingxi An
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, 210023, China
| | - Yanan Lu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, 210023, China
| | - Yuehua Chen
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, 210023, China
| | - Wenyong Lai
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, 210023, China
| | - Xinwen Zhang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, 210023, China
| | - Wei Huang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, 210023, China
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Liu JW, Tang X, Liu C, Zhou HC, Wang S, Kang HP, Li YH, Lai WY. Improved electroluminescence efficiency derived from functionalized decoration of 1,3,4-oxadiazole (OXD)-based Ir(III) complexes. Dalton Trans 2023; 52:11691-11697. [PMID: 37552532 DOI: 10.1039/d3dt01548c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/09/2023]
Abstract
The performance of organic light emitting devices (OLEDs) fabricated using Ir(III) complexes bearing 1,3,4-oxadiazole (OXD)-based cyclometallic ligands still needs to be improved. In this work, Ir3+ was coordinated with a 2-(9,9-diethyl-9H-fluoren-2-yl)-1,3,4-oxadiazole (F-OXD) fragment, which was modified with various functionalized substituents, including fluorenyl, OXD and carbazolyl groups. Three complexes, named Ir-Flu, Ir-OXD and Ir-Cz, were synthesized successfully and their photophysical, electrochemical and electroluminescence properties were investigated in detail. All these complexes exhibited yellow-orange emission in solution and a distinct aggregation-induced phosphorescent emission (AIPE) phenomenon was observed. Monochrome OLEDs were fabricated using these phosphorescent dopants, and the turn-on voltage (V), luminance (L) and current efficiency (CE) showed significant improvement compared to analogous OXD-based Ir(III) complexes reported before. In particular, the device with Ir-OXD as the dopant achieved the highest maximum brightness of 25 014 cd m-2 and the lowest efficiency roll-off (42.6%) at the maximum luminance among all the devices. These results provided a proven strategy of functionalized decoration of OXD-based complexes to achieve superior luminous efficiency devices.
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Affiliation(s)
- Jia-Wei Liu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, China.
| | - Xiong Tang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, China.
| | - Chang Liu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, China.
| | - Han-Chen Zhou
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, China.
| | - Shi Wang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, China.
| | - Hai-Peng Kang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, China.
| | - Yong-Hua Li
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, China.
| | - Wen-Yong Lai
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, China.
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Guan K, Zhang Z, Zhang Q, Ling P, Gao F. Rational design of semiconducting polymer poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(6-{4-ethyl-piperazin-1-yl}-2-phenyl-benzo{de}isoquinoline-1,3-dione)] for highly selective photoelectrochemical assay of p-phenylenediamine. J Electroanal Chem (Lausanne) 2023. [DOI: 10.1016/j.jelechem.2023.117364] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/05/2023]
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Qin Y, Yao L, Zhang F, Li R, Chen Y, Chen Y, Cheng T, Lai W, Mi B, Zhang X, Huang W. Highly Stable Silver Nanowires/Biomaterial Transparent Electrodes for Flexible Electronics. ACS APPLIED MATERIALS & INTERFACES 2022; 14:38021-38030. [PMID: 35959592 DOI: 10.1021/acsami.2c09153] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Flexible transparent electrodes (FTEs) possess excellent optoelectrical properties, mechanical robustness, and environmental adaptability are important for the industrial scale development of flexible electronics. Silver nanowires (AgNWs) are widely used in FTEs owing to their excellent optoelectrical properties and mechanical flexibility. However, the high surface roughness and poor stability of AgNWs FTEs still limit their practical applications. Here, highly stable FTEs are demonstrated via combining AgNWs and biomaterial propolis which is eco-friendly and antioxidative. The AgNWs/propolis composite transparent electrodes exhibit excellent optoelectrical performance as well as a smooth surface (root-mean-square roughness ∼ 6.2 nm). Meanwhile, the composite electrodes possess high mechanical stability (10,000 bending cycles), thermal stability, and environmental adaptability (60 °C and 85 ± 3% humidity for 700 h). The versatile composite FTEs show great potential applications in organic light-emitting diodes and pressure sensors, which exhibit high performance, mechanical stability, and environmental adaptability. Our strategy of introducing biocompatible materials into metallic nanowires opens up new possibilities to achieve high-quality FTEs in a simple and eco-friendly way.
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Affiliation(s)
- Yue Qin
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing 210023, China
| | - Lanqian Yao
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing 210023, China
| | - Fangbo Zhang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing 210023, China
| | - Ruiqing Li
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing 210023, China
| | - Yujie Chen
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing 210023, China
| | - Yuehua Chen
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing 210023, China
| | - Tao Cheng
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing 210023, China
| | - Wenyong Lai
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing 210023, China
| | - Baoxiu Mi
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing 210023, China
| | - Xinwen Zhang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing 210023, China
| | - Wei Huang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing 210023, China
- Frontiers Science Center for Flexible Electronics (FSCFE), MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an 710072, China
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