Super-Resolution Nanolithography of Two-Dimensional Materials by Anisotropic Etching

Nanofabrication for Nanophotonics

Nanofabrication, a pivotal technology at the intersection of nanoscale engineering and high-resolution patterning, has substantially advanced over recent decades. This technology enables the creation of nanopatterns on substrates crucial for developing nanophotonic devices and other applications in diverse fields including electronics and biosciences. Here, this mega-review comprehensively explores various facets of nanofabrication focusing on its application in nanophotonics. It delves into high-resolution techniques like focused ion beam and electron beam lithography, methods for 3D complex structure fabrication, scalable manufacturing approaches, and material compatibility considerations. Special attention is given to emerging trends such as the utilization of two-photon lithography for 3D structures and advanced materials like phase change substances and 2D materials with excitonic properties. By highlighting these advancements, the review aims to provide insights into the ongoing evolution of nanofabrication, encouraging further research and application in creating functional nanostructures. This work encapsulates critical developments and future perspectives, offering a detailed narrative on the state-of-the-art in nanofabrication tailored for both new researchers and seasoned experts in the field.

Scalable Bottom-Up Synthesis of Nanoporous Hexagonal Boron Nitride (h-BN) for Large-Area Atomically Thin Ceramic Membranes

Nanopores embedded within monolayer hexagonal boron nitride (h-BN) offer possibilities of creating atomically thin ceramic membranes with unique combinations of high permeance (atomic thinness), high selectivity (via molecular sieving), increased thermal stability, and superior chemical resistance. However, fabricating size-selective nanopores in monolayer h-BN via scalable top-down processes remains nontrivial due to its chemical inertness, and characterizing nanopore size distribution over a large area remains extremely challenging. Here, we demonstrate a facile and scalable approach of exploiting the chemical vapor deposition (CVD) process temperature to enable direct incorporation of subnanometer/nanoscale pores into the monolayer h-BN lattice, in combination with manufacturing compatible polymer casting to fabricate centimeter-scale nanoporous atomically thin ceramic membranes. We leverage diffusive transport of analytes including size-selective Ficoll sieving to characterize subnanometer-scale and nanoscale defects that manifest as pores in centimeter-scale h-BN membranes, overcoming previous limitations in large-area characterization of nanoscale defects in h-BN. Our approach opens a new frontier to advance atomically thin membranes to 2D ceramic materials, such as h-BN via facile and direct formation of nanopores, for size-selective separations.

Patterning and nanoribbon formation in graphene by hot punching

Large area graphene patterning is critical for applications. Current graphene patterning techniques, such as electron beam lithography and nano imprint lithography, are time consuming and can scale unfavorably with sample size. Resist-based masking and subsequent dry plasma etching can lead to high roughness edges with no alignment to the underlying graphene crystal orientations. In this study, we present hot punching as a novel and feasible method for patterning of chemical vapor deposition (CVD) graphene sheets supported by a polyvinylalcohol (PVA) layer. Additionally, we observe the effect of such hot punching on graphene supported by PVA via optical microscopy, Raman spectroscopy, AFM, and TEM, including wrinkling, strain and the formation of nanoribbons with crystallographically aligned and smooth edges due to fracturing. We present hot punching as a facile technique for the production of arrays of such nanoribbons.

Local Strain-Dependent Etching Patterns of Chemical Vapor Deposited Molybdenum Disulfide

This study reveals a local strain-dependent etching behavior that enables the formation of distinguished etching patterns in differently strained chemical vapor deposited (CVD) 2D molybdenum disulfide (MoS2) monolayers. It is demonstrated that when the local tensile strain of CVD 2D MoS2 is as uniformly low as ɛ ≈ 0.33% or less, the oxidative etching pattern possesses conventional triangular etching pits (TEPs), while when the local tensile strain is as uniformly high as ɛ ≈ 0.55% or larger, the oxidative etching pattern consist of uniformly oriented hexagonal etching channels (HECs). More interestingly, when the CVD 2D MoS2 monolayer has heterogenous strain distribution from ɛ ≈ 0.55% (center region) to ɛ ≈ 0.33% (perimeter region), the oxidative etching pattern comprise of non-uniformly hexagonal-mixed-parallel etching channels (HPECs). The further characterization and analysis reveal the formation mechanism of such strain-dependent etching patterns is built on the local strain-related fractures propagation under oxidative etching, as well as the anisotropy fractures-based oxidative etching kinetics. This study may enhance the understanding of the relationship between etching and growth features of 2D TMDs, and paves the way to etching-nanostructured (or defect) engineering of 2D TMDs and other 2D materials for potential applications in electrocatalysis and optoelectronics.

High Q Hybrid Mie-Plasmonic Resonances in van der Waals Nanoantennas on Gold Substrate

Dielectric nanoresonators have been shown to circumvent the heavy optical losses associated with plasmonic devices; however, they suffer from less confined resonances. By constructing a hybrid system of both dielectric and metallic materials, one can retain low losses, while achieving stronger mode confinement. Here, we use a high refractive index multilayer transition-metal dichalcogenide WS2 exfoliated on gold to fabricate and optically characterize a hybrid nanoantenna-on-gold system. We experimentally observe a hybridization of Mie resonances, Fabry-Perot modes, and surface plasmon-polaritons launched from the nanoantennas into the substrate. We measure the experimental quality factors of hybridized Mie-plasmonic (MP) modes to be up to 33 times that of standard Mie resonances in the nanoantennas on silica. We then tune the nanoantenna geometries to observe signatures of a supercavity mode with a further increased Q factor of over 260 in experiment. We show that this quasi-bound state in the continuum results from strong coupling between a Mie resonance and Fabry-Perot-plasmonic mode in the vicinity of the higher-order anapole condition. We further simulate WS2 nanoantennas on gold with a 5 nm thick hBN spacer in between. By placing a dipole within this spacer, we calculate the overall light extraction enhancement of over 107, resulting from the strong, subwavelength confinement of the incident light, a Purcell factor of over 700, and high directivity of the emitted light of up to 50%. We thus show that multilayer TMDs can be used to realize simple-to-fabricate, hybrid dielectric-on-metal nanophotonic devices granting access to high-Q, strongly confined, MP resonances, along with a large enhancement for emitters in the TMD-gold gap.

Unzipping hBN with ultrashort mid-infrared pulses

Manipulating the nanostructure of materials is critical for numerous applications in electronics, magnetics, and photonics. However, conventional methods such as lithography and laser writing require cleanroom facilities or leave residue. We describe an approach to creating atomically sharp line defects in hexagonal boron nitride (hBN) at room temperature by direct optical phonon excitation with a mid-infrared pulsed laser from free space. We term this phenomenon "unzipping" to describe the rapid formation and growth of a crack tens of nanometers wide from a point within the laser-driven region. Formation of these features is attributed to the large atomic displacement and high local bond strain produced by strongly driving the crystal at a natural resonance. This process occurs only via coherent phonon excitation and is highly sensitive to the relative orientation of the crystal axes and the laser polarization. Its cleanliness, directionality, and sharpness enable applications such as polariton cavities, phonon-wave coupling, and in situ flake cleaving.

Precision nanoengineering for functional self-assemblies across length scales

As nanotechnology continues to push the boundaries across disciplines, there is an increasing need for engineering nanomaterials with atomic-level precision for self-assembly across length scales, i.e., from the nanoscale to the macroscale. Although molecular self-assembly allows atomic precision, extending it beyond certain length scales presents a challenge. Therefore, the attention has turned to size and shape-controlled metal nanoparticles as building blocks for multifunctional colloidal self-assemblies. However, traditionally, metal nanoparticles suffer from polydispersity, uncontrolled aggregation, and inhomogeneous ligand distribution, resulting in heterogeneous end products. In this feature article, I will discuss how virus capsids provide clues for designing subunit-based, precise, efficient, and error-free self-assembly of colloidal molecules. The atomically precise nanoscale proteinic subunits of capsids display rigidity (conformational and structural) and patchy distribution of interacting sites. Recent experimental evidence suggests that atomically precise noble metal nanoclusters display an anisotropic distribution of ligands and patchy ligand bundles. This enables symmetry breaking, consequently offering a facile route for two-dimensional colloidal crystals, bilayers, and elastic monolayer membranes. Furthermore, inter-nanocluster interactions mediated via the ligand functional groups are versatile, offering routes for discrete supracolloidal capsids, composite cages, toroids, and macroscopic hierarchically porous frameworks. Therefore, engineered nanoparticles with atomically precise structures have the potential to overcome the limitations of molecular self-assembly and large colloidal particles. Self-assembly allows the emergence of new optical properties, mechanical strength, photothermal stability, catalytic efficiency, quantum yield, and biological properties. The self-assembled structures allow reproducible optoelectronic properties, mechanical performance, and accurate sensing. More importantly, the intrinsic properties of individual nanoclusters are retained across length scales. The atomically precise nanoparticles offer enormous potential for next-generation functional materials, optoelectronics, precision sensors, and photonic devices.

Nanoscale View of Engineered Massive Dirac Quasiparticles in Lithographic Superstructures

Massive Dirac fermions are low-energy electronic excitations characterized by a hyperbolic band dispersion. They play a central role in several emerging physical phenomena such as topological phase transitions, anomalous Hall effects, and superconductivity. This work demonstrates that massive Dirac fermions can be controllably induced by lithographically patterning superstructures of nanoscale holes in a graphene device. Their band dispersion is systematically visualized using angle-resolved photoemission spectroscopy with nanoscale spatial resolution. A linear scaling of effective mass with feature sizes is reported, underlining the Dirac nature of the superstructures. In situ electrostatic doping dramatically enhances the effective hole mass and leads to the direct observation of an electronic band gap that results in a peak-to-peak band separation of 0.64 ± 0.03 eV, which is shown via first-principles calculations to be strongly renormalized by carrier-induced screening. The methodology demonstrates band structure engineering guided by directly viewing structurally and electrically tunable massive Dirac quasiparticles in lithographic superstructures at the nanoscale.

Optical Constants of Several Multilayer Transition Metal Dichalcogenides Measured by Spectroscopic Ellipsometry in the 300-1700 nm Range: High Index, Anisotropy, and Hyperbolicity

Transition metal dichalcogenides (TMDs) attract significant attention due to their remarkable optical and excitonic properties. It was understood already in the 1960s and recently rediscovered that many TMDs possess a high refractive index and optical anisotropy, which make them attractive for nanophotonic applications. However, accurate analysis and predictions of nanooptical phenomena require knowledge of dielectric constants along both in- and out-of-plane directions and over a broad spectral range, information that is often inaccessible or incomplete. Here, we present an experimental study of optical constants from several exfoliated TMD multilayers obtained using spectroscopic ellipsometry in the broad range of 300-1700 nm. The specific materials studied include semiconducting WS₂, WSe₂, MoS₂, MoSe₂, and MoTe₂, as well as in-plane anisotropic ReS₂ and WTe₂ and metallic TaS₂, TaSe₂, and NbSe₂. The extracted parameters demonstrate a high index (n up to ∼4.84 for MoTe₂), significant anisotropy (n _∥ - n _⊥ ≈ 1.54 for MoTe₂), and low absorption in the near-infrared region. Moreover, metallic TMDs show potential for combined plasmonic-dielectric behavior and hyperbolicity, as their plasma frequency occurs at around ∼1000-1300 nm depending on the material. The knowledge of optical constants of these materials opens new experimental and computational possibilities for further development of all-TMD nanophotonics.

Giant Magnetoresistance in a Chemical Vapor Deposition Graphene Constriction

Magnetic field-driven insulating states in graphene are associated with samples of very high quality. Here, this state is shown to exist in monolayer graphene grown by chemical vapor deposition (CVD) and wet transferred on Al₂O₃ without encapsulation with hexagonal boron nitride (h-BN) or other specialized fabrication techniques associated with superior devices. Two-terminal measurements are performed at low temperature using a GaAs-based multiplexer. During high-throughput testing, insulating properties are found in a 10 μm long graphene device which is 10 μm wide at one contact with an ≈440 nm wide constriction at the other. The low magnetic field mobility is ≈6000 cm² V^-1 s^-1. An energy gap induced by the magnetic field opens at charge neutrality, leading to diverging resistance and current switching on the order of 10⁴ with DC bias voltage at an approximate electric field strength of ≈0.04 V μm^-1 at high magnetic field. DC source-drain bias measurements show behavior associated with tunneling through a potential barrier and a transition between direct tunneling at low bias to Fowler-Nordheim tunneling at high bias from which the tunneling region is estimated to be on the order of ≈100 nm. Transport becomes activated with temperature from which the gap size is estimated to be 2.4 to 2.8 meV at B = 10 T. Results suggest that a local electronically high quality region exists within the constriction, which dominates transport at high B, causing the device to become insulating and act as a tunnel junction. The use of wet transfer fabrication techniques of CVD material without encapsulation with h-BN and the combination with multiplexing illustrates the convenience of these scalable and reasonably simple methods to find high quality devices for fundamental physics research and with functional properties.