1
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Zhang W, Chiao KH, Huang HW, Abid M, Ó Coileáin C, Hung KM, Chang CR, Wu YR, Wu HC. Broadband InSe/MoS 2 Type-II Heterojunction Photodetector with Gate-Tunable Polarity Induced Near-Linear Wavelength-Dependent Photocurrent Peak. ACS APPLIED MATERIALS & INTERFACES 2025; 17:12941-12951. [PMID: 39963896 DOI: 10.1021/acsami.4c22132] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/28/2025]
Abstract
Selectable polarity in van der Waals materials not only broadens the scope of design for electronic components but also opens new avenues for the development of advanced electronic, optoelectronic, and sensor devices. In this study, we fabricated vertically stacked InSe/MoS2 van der Waals type-II heterojunction photodetectors and conducted a systematic investigation of their photoelectrical properties. Our findings demonstrate the high performance of these photodetectors, characterized by effective suppression of charge recombination, the presence of both positive and negative photoconductivity under different incident light excitations, broad-spectrum detection ranging from 400 to 1064 nm, and remarkable responsivity and photodetectivity values of 10,200 A/W (-1430 A/W) and 3 × 1013 cm Hz-1/2 W-1 (3.6 × 1011 cm Hz-1/2 W-1) at 532 nm (1064 nm), respectively. Additionally, the fabricated photodetectors exhibit a gate-tunable polarity transition at a gate voltage of -20 V, leading to a photocurrent peak, the position of which shows a near-linear dependence on the incident light wavelength. By applying external gate voltages, the van der Waals heterojunctions can flexibly switch between functions such as photodetection, modulation, and storage in different applications, providing new scope for the design of integrated circuits and the development of multifunctional devices. Through Poisson and drift-diffusion simulations, we attribute the observed negative photoresponse to electrons excited from the InSe valence band to the MoS2 conduction band and subsequently trapped at the interface. The photocurrent peak arises from charge carrier accumulation at the interface, with its position determined by the interplay between the hole accumulation density in InSe and electron accumulation density in MoS2. Our results present a promising opportunity for the design of compact spectrometers based on van der Waals type-II heterojunction photodetectors.
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Affiliation(s)
- Wenying Zhang
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Kuan-Hao Chiao
- Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University. Taipei 10617, Taiwan, ROC
| | - Hsin-Wen Huang
- Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University. Taipei 10617, Taiwan, ROC
| | - Mohamed Abid
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Cormac Ó Coileáin
- Institute of Physics, Faculty of Electrical Engineering and Information Technology, University of the Bundeswehr Munich, Neubiberg 85577, Germany
| | - Kuan-Ming Hung
- Department of Electronics Engineering, National Kaohsiung University of Science and Technology, Kaohsiung 807, Taiwan, ROC
| | - Ching-Ray Chang
- Quantum information center, Chung Yuan Christian University, Taoyuan 32023, Taiwan, ROC
- Department of Physics, National Taiwan University, Taipei 106, Taiwan, ROC
| | - Yuh-Renn Wu
- Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University. Taipei 10617, Taiwan, ROC
| | - Han-Chun Wu
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
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2
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Li W, Yang R, Han X, Cheng L, Yin T, Gao K, Gan X, Wang Y, Wang S. Bias Tunable SnS 2/ReSe 2 Tunneling Photodetector with High Responsivity and Fast Response Speed. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2025; 21:e2408379. [PMID: 39726331 DOI: 10.1002/smll.202408379] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/14/2024] [Revised: 11/11/2024] [Indexed: 12/28/2024]
Abstract
2D photodetectors operating in photovoltaic mode exhibit a trade-off between response speed and photoresponsivity. This work presents a phototransistor based on SnS2/ReSe2 heterojunction. Under negative bias, the energy band spike at the heterojunction interface impedes the carrier drifting so that the dark current is as low as 10-13 A. The tunneling under positive bias significantly reduces the transmission time of photogenerated carriers, which enhances the responsivity and specific detectivity to 32.77 A W-1 and 5.77 × 1011 Jones, respectively. Under reverse bias, the enhanced built-in electric field strengthens the rapid separation of photogenerated carriers, which elevates a response speed to 10.5/24.1 µs and a 3 dB bandwidth to 54.8 kHz. The device also exhibits a broad spectral detection capability, extending from the near-ultraviolet to the near-infrared. Furthermore, this work also executed high-quality ASCII communication and high-resolution broadband single-pixel imaging, which demonstrates great promise for incorporation into future broadband optoelectronic systems.
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Affiliation(s)
- Wei Li
- School of Microelectronics, Northwestern Polytechnical University, 127 West Youyi Road, Beilin District, Xi'an, Shaanxi, 710072, P. R. China
| | - Ruijing Yang
- School of Microelectronics, Northwestern Polytechnical University, 127 West Youyi Road, Beilin District, Xi'an, Shaanxi, 710072, P. R. China
| | - Xiao Han
- School of Microelectronics, Northwestern Polytechnical University, 127 West Youyi Road, Beilin District, Xi'an, Shaanxi, 710072, P. R. China
| | - Lin Cheng
- School of Microelectronics, Northwestern Polytechnical University, 127 West Youyi Road, Beilin District, Xi'an, Shaanxi, 710072, P. R. China
| | - Tianle Yin
- School of Microelectronics, Northwestern Polytechnical University, 127 West Youyi Road, Beilin District, Xi'an, Shaanxi, 710072, P. R. China
| | - Kexin Gao
- School of Microelectronics, Northwestern Polytechnical University, 127 West Youyi Road, Beilin District, Xi'an, Shaanxi, 710072, P. R. China
| | - Xuetao Gan
- School of Microelectronics, Northwestern Polytechnical University, 127 West Youyi Road, Beilin District, Xi'an, Shaanxi, 710072, P. R. China
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 127 West Youyi Road, Beilin District, Xi'an, Shaanxi, 710072, P. R. China
| | - Yucheng Wang
- School of Microelectronics, Northwestern Polytechnical University, 127 West Youyi Road, Beilin District, Xi'an, Shaanxi, 710072, P. R. China
| | - Shaoxi Wang
- School of Microelectronics, Northwestern Polytechnical University, 127 West Youyi Road, Beilin District, Xi'an, Shaanxi, 710072, P. R. China
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3
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Li H, Zhang Y, Liu F, Lu J. Monolayer SnS 2 Schottky barrier field effect transistors: effects of electrodes. NANOSCALE 2024; 16:18005-18013. [PMID: 39248678 DOI: 10.1039/d4nr02419b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/10/2024]
Abstract
Achieving Ohmic contacts with low resistance is quite desirable for two-dimensional (2D) Schottky barrier field effect transistors (SBFETs). We verify the electrode effect on monolayer (ML) SnS2 SBFETs using ab initio calculations. With the aforeselected ML electrodes from matching lattices and work functions, we obtain n-type Ohmic contacts or quasi-Ohmic contacts to ML SnS2 with ML 1T-NbTe2, Sc2NF2, Mo2NF2, Nb2CF2, and graphene electrodes. The n-type ML SnS2 SBFET with the Ohmic-contact 1T-NbTe2 electrode exhibits remarkably better device performance than that with a Schottky-contact 2H-NbTe2 electrode, and their on-state currents of 629/1048 μA μm-1, delay times of 0.236/0.169 ps, and power dissipations of 0.074/0.089 fJ μm-1 exceed the International Roadmap for Devices and Systems targets for low-power/high-performance application. This study reports on Ohmic-contact electrodes for n-type ML SnS2 SBFETs and can give hints for future theoretical and experimental studies on 2D SBFETs.
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Affiliation(s)
- Hong Li
- College of Mechanical and Material Engineering, North China University of Technology, Beijing 100144, P. R. China.
| | - Yunfeng Zhang
- College of Mechanical and Material Engineering, North China University of Technology, Beijing 100144, P. R. China.
| | - Fengbin Liu
- College of Mechanical and Material Engineering, North China University of Technology, Beijing 100144, P. R. China.
| | - Jing Lu
- State Key Laboratory of Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China.
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, P. R. China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong 226000, P. R. China
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4
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Liu X, Yang Y, Huang Z, Jiang Z, Zhou J, Li B, Ma Z, Zhang Y, Huang Y, Li X. Enhanced Optoelectronic Performance of p-WSe 2/Re 0.12W 0.42Mo 0.46S 2 Heterojunction. ACS APPLIED MATERIALS & INTERFACES 2024; 16:42588-42596. [PMID: 39083669 DOI: 10.1021/acsami.4c05146] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/02/2024]
Abstract
Stacking of van der Waals (vdW) heterostructures and chemical element doping have emerged as crucial methods for enhancing the performance of semiconductors. This study proposes a novel strategy for modifying heterostructures by codoping MoS2 with two elements, Re and W, resulting in the construction of a RexWyMo1-x-yS2/WSe2 heterostructure for the preparation of photodetectors. This approach incorporates multiple strategies to enhance the performance, including hybrid stacking of materials, type-II band alignment, and regulation of element doping. As a result, the RexWyMo1-x-yS2/WSe2 devices demonstrate exceptional performance, including high photoresponsivity (1550.22 A/W), high detectivity (8.17 × 1013 Jones), and fast response speed (rise/fall time, 190 ms/1.42 s). Moreover, the ability to tune the band gap through element doping enables spectral response in the ultraviolet (UV), visible light, and near-infrared (NIR) regions. This heterostructure fabrication scheme highlights the high sensitivity and potential applications of vdW heterostructure (vdWH) in optoelectronic devices.
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Affiliation(s)
- Xinke Liu
- College of Materials Science and Engineering, Institute of Microelectronics (IME), Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, Shenzhen 518060, China
| | - Yongkai Yang
- College of Materials Science and Engineering, Institute of Microelectronics (IME), Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, Shenzhen 518060, China
| | - Zheng Huang
- College of Materials Science and Engineering, Institute of Microelectronics (IME), Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, Shenzhen 518060, China
| | - Zhongwei Jiang
- College of Materials Science and Engineering, Institute of Microelectronics (IME), Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, Shenzhen 518060, China
| | - Jie Zhou
- College of Materials Science and Engineering, Institute of Microelectronics (IME), Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, Shenzhen 518060, China
| | - Bo Li
- College of Materials Science and Engineering, Institute of Microelectronics (IME), Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, Shenzhen 518060, China
| | - Zhengweng Ma
- College of Materials Science and Engineering, Institute of Microelectronics (IME), Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, Shenzhen 518060, China
| | - Yating Zhang
- College of Materials Science and Engineering, Institute of Microelectronics (IME), Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, Shenzhen 518060, China
| | - Yeying Huang
- College of Materials Science and Engineering, Institute of Microelectronics (IME), Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, Shenzhen 518060, China
| | - Xiaohua Li
- College of Materials Science and Engineering, Institute of Microelectronics (IME), Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, Shenzhen 518060, China
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5
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Maity S, Kumar P. A synergistic heterojunction of SnS 2/SnSSe nanosheets on GaN for advanced self-powered photodetectors. NANOSCALE HORIZONS 2024; 9:1318-1329. [PMID: 38808592 DOI: 10.1039/d4nh00102h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/30/2024]
Abstract
Tin-based TMDCs are gaining traction in optoelectronics due to their eco-friendliness and easy synthesis, contrasting Mo/W-based counterparts. This study pioneers the solvothermal synthesis of highly crystalline SnSSe alloy, akin to Janus structures, bridging a notable research gap. By integrating SnS2/SnSSe materials onto a GaN platform, a synergistic heterojunction is created, enhancing light absorption and the electron-hole pair separation efficiency, demonstrating a self-powered photodetection. The GaN/SnS2/SnSSe heterojunction showcases a staircase-like (type-II) band alignment and exceptional performance metrics: high photoresponsivity of 314.96 A W-1, specific detectivity of 2.0 × 1014 jones, and external quantum efficiency of 10.7 × 104% under 365 nm illumination at 150 nW cm-2 intensity and 3 V bias. Notably, the device displays intensity-dependent photocurrent and photoswitching behaviors without external bias, highlighting its unique self-powered attributes. This study underscores SnS2's significance in optoelectronics and explores SnSSe integration into van der Waals heterostructures, promising advanced photodetection devices and bias-free optoelectronics.
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Affiliation(s)
- Sukhendu Maity
- School of Materials Science, Indian Association for the Cultivation of Science, Kolkata 700032, India.
| | - Praveen Kumar
- School of Materials Science, Indian Association for the Cultivation of Science, Kolkata 700032, India.
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6
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Yu X, Ji Y, Shen X, Le X. Progress in Advanced Infrared Optoelectronic Sensors. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:845. [PMID: 38786801 PMCID: PMC11123936 DOI: 10.3390/nano14100845] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/08/2024] [Revised: 05/09/2024] [Accepted: 05/10/2024] [Indexed: 05/25/2024]
Abstract
Infrared optoelectronic sensors have attracted considerable research interest over the past few decades due to their wide-ranging applications in military, healthcare, environmental monitoring, industrial inspection, and human-computer interaction systems. A comprehensive understanding of infrared optoelectronic sensors is of great importance for achieving their future optimization. This paper comprehensively reviews the recent advancements in infrared optoelectronic sensors. Firstly, their working mechanisms are elucidated. Then, the key metrics for evaluating an infrared optoelectronic sensor are introduced. Subsequently, an overview of promising materials and nanostructures for high-performance infrared optoelectronic sensors, along with the performances of state-of-the-art devices, is presented. Finally, the challenges facing infrared optoelectronic sensors are posed, and some perspectives for the optimization of infrared optoelectronic sensors are discussed, thereby paving the way for the development of future infrared optoelectronic sensors.
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Affiliation(s)
- Xiang Yu
- School of Physics, Beihang University, Beijing 100191, China
- Beijing Advanced Innovation Center for Big Data-Based Precision Medicine, School of Medicine and Engineering, Beihang University, Beijing 100191, China
- Beijing Key Laboratory of Advanced Nuclear Energy Materials and Physics, Beihang University, Beijing 100191, China
| | - Yun Ji
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117583, Singapore
| | - Xinyi Shen
- School of Physics, Beihang University, Beijing 100191, China
- Beijing Advanced Innovation Center for Big Data-Based Precision Medicine, School of Medicine and Engineering, Beihang University, Beijing 100191, China
- Beijing Key Laboratory of Advanced Nuclear Energy Materials and Physics, Beihang University, Beijing 100191, China
| | - Xiaoyun Le
- School of Physics, Beihang University, Beijing 100191, China
- Beijing Advanced Innovation Center for Big Data-Based Precision Medicine, School of Medicine and Engineering, Beihang University, Beijing 100191, China
- Beijing Key Laboratory of Advanced Nuclear Energy Materials and Physics, Beihang University, Beijing 100191, China
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7
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Shi M, Lv Y, Wu G, Cho J, Abid M, Hung KM, Coileáin CÓ, Chang CR, Wu HC. Band Alignment Transition and Enhanced Performance in Vertical SnS 2/MoS 2 van der Waals Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2024; 16:22622-22631. [PMID: 38625091 DOI: 10.1021/acsami.4c00781] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/17/2024]
Abstract
The strong light-matter interaction and naturally passivated surfaces of van der Waals materials make heterojunctions of such materials ideal candidates for high-performance photodetectors. In this study, we fabricated SnS2/MoS2 van der Waals heterojunctions and investigated their photoelectric properties. Using an applied gate voltage, we can effectively alter the band arrangement and achieve a transition in type II and type I junctions. It is found that the SnS2/MoS2 van der Waals heterostructures are type II heterojunctions when the gate voltage is above -25 V. Below this gate voltage, the heterojunctions become type I. Photoelectric measurements under various wavelengths of incident light reveal enhanced sensitivity in the ultraviolet region and a broadband sensing range from 400 to 800 nm. Moreover, due to the transition from type II to type I band alignment, the measured photocurrent saturates at a specific gate voltage, and this value depends crucially on the bias voltage and light wavelength, providing a potential avenue for designing compact spectrometers.
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Affiliation(s)
- Mingyu Shi
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Yanhui Lv
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Gang Wu
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Jiung Cho
- Western Seoul Center, Korea Basic Science Institute, Seoul 03579, Republic of Korea
- Department of Materials Science and Engineering, Hongik University, Sejong 30016, Republic of Korea
| | - Mohamed Abid
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Kuan-Ming Hung
- Department of Electronics Engineering, National Kaohsiung University of Science and Technology, Kaohsiung 807, Taiwan, ROC
| | - Cormac Ó Coileáin
- Institute of Physics, EIT 2, Faculty of Electrical Engineering and Information Technology, University of the Bundeswehr Munich, Neubiberg 85577, Germany
| | - Ching-Ray Chang
- Quantum Information Center, Chung Yuan Christian University, Taoyuan 32023, Taiwan, ROC
- Department of Physics, National Taiwan University, Taipei 106, Taiwan, ROC
| | - Han-Chun Wu
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
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8
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Wang F, Zhang T, Xie R, Liu A, Dai F, Chen Y, Xu T, Wang H, Wang Z, Liao L, Wang J, Zhou P, Hu W. Next-Generation Photodetectors beyond Van Der Waals Junctions. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2301197. [PMID: 36960667 DOI: 10.1002/adma.202301197] [Citation(s) in RCA: 10] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/07/2023] [Revised: 03/16/2023] [Indexed: 06/18/2023]
Abstract
With the continuous advancement of nanofabrication techniques, development of novel materials, and discovery of useful manipulation mechanisms in high-performance applications, especially photodetectors, the morphology of junction devices and the way junction devices are used are fundamentally revolutionized. Simultaneously, new types of photodetectors that do not rely on any junction, providing a high signal-to-noise ratio and multidimensional modulation, have also emerged. This review outlines a unique category of material systems supporting novel junction devices for high-performance detection, namely, the van der Waals materials, and systematically discusses new trends in the development of various types of devices beyond junctions. This field is far from mature and there are numerous methods to measure and evaluate photodetectors. Therefore, it is also aimed to provide a solution from the perspective of applications in this review. Finally, based on the insight into the unique properties of the material systems and the underlying microscopic mechanisms, emerging trends in junction devices are discussed, a new morphology of photodetectors is proposed, and some potential innovative directions in the subject area are suggested.
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Affiliation(s)
- Fang Wang
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Tao Zhang
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Runzhang Xie
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Anna Liu
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Fuxing Dai
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yue Chen
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Tengfei Xu
- School of Microelectronics, Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China
| | - Hailu Wang
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Zhen Wang
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Lei Liao
- College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China
| | - Jianlu Wang
- School of Microelectronics, Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China
| | - Peng Zhou
- School of Microelectronics, Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
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9
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Lin DY, Hsu HP, Liu KH, Wu PH, Shih YT, Wu YF, Wang YP, Lin CF. Enhanced Optical Response of SnS/SnS 2 Layered Heterostructure. SENSORS (BASEL, SWITZERLAND) 2023; 23:4976. [PMID: 37430888 DOI: 10.3390/s23104976] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/07/2023] [Revised: 05/17/2023] [Accepted: 05/18/2023] [Indexed: 07/12/2023]
Abstract
The SnS/SnS2 heterostructure was fabricated by the chemical vapor deposition method. The crystal structure properties of SnS2 and SnS were characterized by X-ray diffraction (XRD) pattern, Raman spectroscopy, and field emission scanning electron microscopy (FESEM). The frequency dependence photoconductivity explores its carrier kinetic decay process. The SnS/SnS2 heterostructure shows that the ratio of short time constant decay process reaches 0.729 with a time constant of 4.3 × 10-4 s. The power-dependent photoresponsivity investigates the mechanism of electron-hole pair recombination. The results indicate that the photoresponsivity of the SnS/SnS2 heterostructure has been increased to 7.31 × 10-3 A/W, representing a significant enhancement of approximately 7 times that of the individual films. The results show the optical response speed has been improved by using the SnS/SnS2 heterostructure. These results indicate an application potential of the layered SnS/SnS2 heterostructure for photodetection. This research provides valuable insights into the preparation of the heterostructure composed of SnS and SnS2, and presents an approach for designing high-performance photodetection devices.
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Affiliation(s)
- Der-Yuh Lin
- Department of Electronic Engineering, National Changhua University of Education, No. 2, Shi-Da Rd., Changhua 500, Taiwan
| | - Hung-Pin Hsu
- Department of Electronic Engineering, Ming Chi University of Technology, No. 84, Gongzhuan Rd., Taishan Dist., New Taipei City 243, Taiwan
| | - Kuang-Hsin Liu
- Department of Electronic Engineering, National Changhua University of Education, No. 2, Shi-Da Rd., Changhua 500, Taiwan
| | - Po-Hung Wu
- Department of Electrical Engineering, National Dong Hwa University, No. 1, Sec. 2, Da Hsueh Rd., Shoufeng, Hualien 974, Taiwan
| | - Yu-Tai Shih
- Department of Physics, National Changhua University of Education, No. 1, Jin-De Rd., Changhua 500, Taiwan
| | - Ya-Fen Wu
- Department of Electronic Engineering, Ming Chi University of Technology, No. 84, Gongzhuan Rd., Taishan Dist., New Taipei City 243, Taiwan
| | - Yi-Ping Wang
- Department of Electronic Engineering, Ming Chi University of Technology, No. 84, Gongzhuan Rd., Taishan Dist., New Taipei City 243, Taiwan
| | - Chia-Feng Lin
- Department of Materials Science and Engineering, National Chung Hsing University, No. 145, Xingda Rd., South Dist., Taichung 402, Taiwan
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10
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Zhao Y, Cho J, Choi M, Ó Coileáin C, Arora S, Hung KM, Chang CR, Abid M, Wu HC. Light-Tunable Polarity and Erasable Physisorption-Induced Memory Effect in Vertically Stacked InSe/SnS 2 Self-Powered Photodetector. ACS NANO 2022; 16:17347-17355. [PMID: 36153977 DOI: 10.1021/acsnano.2c08177] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
van der Waals heterojunctions with tunable polarity are being actively explored for more Moore and more-than-Moore device applications, as they can greatly simplify circuit design. However, inadequate control over the multifunctional operational states is still a challenge in their development. Here, we show that a vertically stacked InSe/SnS2 van der Waals heterojunction exhibits type-II band alignment, and its polarity can be tuned by an external electric field and by the wavelength and intensity of an illuminated light source. Moreover, such SnS2/InSe diodes are self-powered broadband photodetectors with good performance. The self-powered performance can be further enhanced significantly with gas adsorption, and the device can be quickly restored to the state before gas injection using a gate voltage pulse. Our results suggest a way to achieve and design multiple functions in a single device with multifield coupling of light, electrical field, gas, or other external stimulants.
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Affiliation(s)
- Yue Zhao
- School of Physics, Beijing Institute of Technology, Beijing 100081, P.R. China
| | - Jiung Cho
- Western Seoul Center, Korea Basic Science Institute, Seoul 03579, Republic of Korea
| | - Miri Choi
- Chuncheon Center, Korea Basic Science Institute, Chuncheon 24341, Republic of Korea
| | - Cormac Ó Coileáin
- Institute of Physics, EIT 2, Faculty of Electrical Engineering and Information Technology, University of the Bundeswehr Munich, Neubiberg 85577, Germany
| | - Sunil Arora
- Centre for Nanoscience and Nanotechnology, Panjab University, Chandigarh 160014, India
| | - Kuan-Ming Hung
- Department of Electronics Engineering, National Kaohsiung University of Science and Technology, Kaohsiung 807, Taiwan, ROC
| | - Ching-Ray Chang
- Quantum information center, Chung Yuan Christian University, Taoyuan 32023, Taiwan, ROC
- Department of Physics, National Taiwan University, Taipei 106, Taiwan, ROC
| | - Mohamed Abid
- School of Physics, Beijing Institute of Technology, Beijing 100081, P.R. China
| | - Han-Chun Wu
- School of Physics, Beijing Institute of Technology, Beijing 100081, P.R. China
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11
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Muhammad Z, Islam R, Wang Y, Autieri C, Lv Z, Singh B, Vallobra P, Zhang Y, Zhu L, Zhao W. Laser Irradiation Effect on the p-GaSe/n-HfS 2 PN-Heterojunction for High-Performance Phototransistors. ACS APPLIED MATERIALS & INTERFACES 2022; 14:35927-35939. [PMID: 35867860 DOI: 10.1021/acsami.2c08430] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Two-dimensional (2D)-based PN-heterojunction revealed a promising future of atomically thin optoelectronics with diverse functionalities in different environments. Herein, we reported a p-GaSe/n-HfS2 van der Waals (vdW) heterostructure for high-performance photodetectors and investigated the laser irradiation effect on the fabricated device. The fabricated 2D vdW heterostructure revealed a high photoresponsivity of 1 × 104 A W-1 with a photocurrent value of 377 nA due to unique type-II band alignment and enhanced surface potential under light illumination, which is further confirmed by density functional theory (DFT) calculations. Before laser irradiation, the device showed high field-effect mobility (μEF) of 26.37 cm2 V-1 s-1, ON/OFF ratio of ∼105, and threshold voltage swing (SS) of ∼463 mV dec-1. With the exposure of 690 mW cm-2 laser power density, μEF reached 204 cm2 V-1 s-1, although ∼2 V ΔVth shifts are observed along with the SS decreased to 175 mV dec-1. Interestingly, the reduced SS shows better channel control of the fabricated device with laser power. Similarly, the ON/OFF ratio decreased to ∼1.29 × 103. The results indicate that the creation of oxide trap charges at the interface of SiO2 and PN-heterojunction layers was observed with voltage biasing and high laser power density. The degradation of electrical parameters is attributed to fewer interface trap charges per surface area of the device rather than direct damage in PN-heterojunction layers. Considering the excellent 2D electronic properties, these materials are better candidates for future high-radiation environments.
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Affiliation(s)
- Zahir Muhammad
- Hefei Innovation Research Institute, School of Microelectronics, Beihang University, Hefei 230013, P. R. China
| | - Rajibul Islam
- International Research Centre Magtop, Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, PL-02668 Warsaw, Poland
| | - Yan Wang
- Hefei Innovation Research Institute, School of Microelectronics, Beihang University, Hefei 230013, P. R. China
| | - Carmine Autieri
- International Research Centre Magtop, Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, PL-02668 Warsaw, Poland
- Consiglio Nazionale delle Ricerche CNR-SPIN, UOS Salerno, I-84084 Fisciano, Salerno, Italy
| | - Ziyu Lv
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China
| | - Bahadur Singh
- Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai 400005, India
| | - Pierre Vallobra
- Hefei Innovation Research Institute, School of Microelectronics, Beihang University, Hefei 230013, P. R. China
| | - Yue Zhang
- Hefei Innovation Research Institute, School of Microelectronics, Beihang University, Hefei 230013, P. R. China
| | - Ling Zhu
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China
| | - Weisheng Zhao
- Hefei Innovation Research Institute, School of Microelectronics, Beihang University, Hefei 230013, P. R. China
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Zhou G, Zhao H, Li X, Sun Z, Wu H, Li L, An H, Ruan S, Peng Z. Highly-Responsive Broadband Photodetector Based on Graphene-PTAA-SnS 2 Hybrid. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:475. [PMID: 35159820 PMCID: PMC8839128 DOI: 10.3390/nano12030475] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/31/2021] [Revised: 01/26/2022] [Accepted: 01/26/2022] [Indexed: 12/10/2022]
Abstract
The development of wearable systems stimulate the exploration of flexible broadband photodetectors with high responsivity and stability. In this paper, we propose a facile liquid-exfoliating method to prepare SnS2 nanosheets with high-quality crystalline structure and optoelectronic properties. A flexible photodetector is fabricated using the SnS2 nanosheets with graphene-poly[bis(4-phenyl) (2,4,6-trimethylphenyl) amine (PTAA) hybrid structure. The liquid-exfoliated SnS2 nanosheets enable the photodetection from ultraviolet to near infrared with high responsivity and detectivity. The flexible broadband photodetector demonstrates a maximum responsivity of 1 × 105 A/W, 3.9 × 104 A/W, 8.6 × 102 A/W and 18.4 A/W under 360 nm, 405 nm, 532 nm, and 785 nm illuminations, with specific detectivity up to ~1012 Jones, ~1011 Jones, ~109 Jones, and ~108 Jones, respectively. Furthermore, the flexible photodetector exhibits nearly invariable performance over 3000 bending cycles, rendering great potentials for wearable applications.
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Affiliation(s)
- Guigang Zhou
- Center for Stretchable Electronics and NanoSensors, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China; (G.Z.); (Z.P.)
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China; (Z.S.); (H.W.)
| | - Huancheng Zhao
- Shenzhen Key Laboratory of Laser Engineering, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China; (H.Z.); (S.R.)
| | - Xiangyang Li
- Key Laboratory of Advanced Optical Precision Manufacturing Technology of Guangdong Higher Education Institutes, College of Applied Technology, Shenzhen University, Shenzhen 518060, China;
| | - Zhenhua Sun
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China; (Z.S.); (H.W.)
| | - Honglei Wu
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China; (Z.S.); (H.W.)
| | - Ling Li
- Shenzhen Key Laboratory of Laser Engineering, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China; (H.Z.); (S.R.)
| | - Hua An
- Center for Stretchable Electronics and NanoSensors, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China; (G.Z.); (Z.P.)
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China; (Z.S.); (H.W.)
| | - Shuangchen Ruan
- Shenzhen Key Laboratory of Laser Engineering, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China; (H.Z.); (S.R.)
| | - Zhengchun Peng
- Center for Stretchable Electronics and NanoSensors, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China; (G.Z.); (Z.P.)
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China; (Z.S.); (H.W.)
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13
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Sett S, Parappurath A, Gill NK, Chauhan N, Ghosh A. Engineering sensitivity and spectral range of photodetection in van der Waals materials and hybrids. NANO EXPRESS 2022. [DOI: 10.1088/2632-959x/ac46b9] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Abstract
Abstract
Exploration of van der Waals heterostructures in the field of optoelectronics has produced photodetectors with very high bandwidth as well as ultra-high sensitivity. Appropriate engineering of these heterostructures allows us to exploit multiple light-to-electricity conversion mechanisms, ranging from photovoltaic, photoconductive to photogating processes. These mechanisms manifest in different sensitivity and speed of photoresponse. In addition, integrating graphene-based hybrid structures with photonic platforms provides a high gain-bandwidth product, with bandwidths ≫1 GHz. In this review, we discuss the progression in the field of photodetection in 2D hybrids. We emphasize the physical mechanisms at play in diverse architectures and discuss the origin of enhanced photoresponse in hybrids. Recent developments in 2D photodetectors based on room temperature detection, photon-counting ability, integration with Si and other pressing issues, that need to be addressed for these materials to be integrated with industrial standards have been discussed.
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