Femtosecond Laser Irradiation-Mediated MoS2-Metal Contact Engineering for High-Performance Field-Effect Transistors and Photodetectors

Can 2D Semiconductors Be Game-Changers for Nanoelectronics and Photonics?

2D semiconductors have interesting physical and chemical attributes that have led them to become one of the most intensely investigated semiconductor families in recent history. They may play a crucial role in the next technological revolution in electronics as well as optoelectronics or photonics. In this Perspective, we explore the fundamental principles and significant advancements in electronic and photonic devices comprising 2D semiconductors. We focus on strategies aimed at enhancing the performance of conventional devices and exploiting important properties of 2D semiconductors that allow fundamentally interesting device functionalities for future applications. Approaches for the realization of emerging logic transistors and memory devices as well as photovoltaics, photodetectors, electro-optical modulators, and nonlinear optics based on 2D semiconductors are discussed. We also provide a forward-looking perspective on critical remaining challenges and opportunities for basic science and technology level applications of 2D semiconductors.

Local modulation of Au/MoS2 Schottky barriers using a top ZnO nanowire gate for high-performance photodetection

Schottky junctions are commonly used for fabricating heterojunction-based 2D transition metal dichalcogenide (TMD) photodetectors, characteristically offering a wide detection range, high sensitivity and fast response. However, these devices often suffer from reduced detectivity due to the high dark current, making it challenging to discover a simple and efficient universal way to improve the photoelectric performances. Here, we demonstrate a novel approach for integrating ZnO nanowire gates into a MoS2-Au Schottky junction to improve the photoelectric performances of photodetectors by locally controlling the Schottky barrier. This strategy remarkably reduces the dark current level of the device without affecting its photocurrent and the Schottky detectivity can be modified to a maximum detectivity of 1.4 × 1013 Jones with -20 V NG bias. This work provides potential possibilities for tuning the band structure of other materials and optimizing the performance of heterojunction photodetectors.

Artificial Intelligence Meets Flexible Sensors: Emerging Smart Flexible Sensing Systems Driven by Machine Learning and Artificial Synapses

The recent wave of the artificial intelligence (AI) revolution has aroused unprecedented interest in the intelligentialize of human society. As an essential component that bridges the physical world and digital signals, flexible sensors are evolving from a single sensing element to a smarter system, which is capable of highly efficient acquisition, analysis, and even perception of vast, multifaceted data. While challenging from a manual perspective, the development of intelligent flexible sensing has been remarkably facilitated owing to the rapid advances of brain-inspired AI innovations from both the algorithm (machine learning) and the framework (artificial synapses) level. This review presents the recent progress of the emerging AI-driven, intelligent flexible sensing systems. The basic concept of machine learning and artificial synapses are introduced. The new enabling features induced by the fusion of AI and flexible sensing are comprehensively reviewed, which significantly advances the applications such as flexible sensory systems, soft/humanoid robotics, and human activity monitoring. As two of the most profound innovations in the twenty-first century, the deep incorporation of flexible sensing and AI technology holds tremendous potential for creating a smarter world for human beings.

Laser doping of 2D material for precise energy band design

The number of excellent 2D materials is finite for nano optoelectric devices including transistors, diodes, sensors, and so forth, thus the modulation of 2D materials is important to improve the performance of the current eligible 2D materials, and even to transform unqualified 2D materials into eligible 2D materials. Here we develop a fine laser doping strategy based on highly controllable laser direct writing, and investigate its effectivity and practicability by doping multilayer molybdenum ditelluride (MoTe₂). Power-gradient laser doping and patterned laser doping, for the first time, are presented for designable and fine doping of 2D materials. The laser-induced polar transition of MoTe₂ indicates good controllability of the method for the carrier concentration distribution in MoTe₂. Multiple devices with finely tuned energy band structures are demonstrated by means of power-gradient laser doping and patterned laser doping, further illustrating the design capability of a precise energy band in 2D materials.

Laser-assisted synthesis of two-dimensional transition metal dichalcogenides: a mini review

The atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDCs) have attracted the researcher's interest in the field of flexible electronics due to their high mobility, tunable bandgaps, and mechanical flexibility. As an emerging technique, laser-assisted direct writing has been used for the synthesis of TMDCs due to its extremely high preparation accuracy, rich light-matter interaction mechanism, dynamic properties, fast preparation speed, and minimal thermal effects. Currently, this technology has been focused on the synthesis of 2D graphene, while there are few literatures that summarize the progress in direct laser writing technology in the synthesis of 2D TMDCs. Therefore, in this mini-review, the synthetic strategies of applying laser to the fabrication of 2D TMDCs have been briefly summarized and discussed, which are divided into top-down and bottom-up methods. The detailed fabrication steps, main characteristics, and mechanism of both methods are discussed. Finally, prospects and further opportunities in the booming field of laser-assisted synthesis of 2D TMDCs are addressed.

Ultrafast and Resist-Free Nanopatterning of 2D Materials by Femtosecond Laser Irradiation

The performance of two-dimensional (2D) materials is promising for electronic, photonic, and sensing devices since they possess large surface-to-volume ratios, high mechanical strength, and broadband light sensitivity. While significant advances have been made in synthesizing and transferring 2D materials onto different substrates, there is still the need for scalable patterning of 2D materials with nanoscale precision. Conventional lithography methods require protective layers such as resist or metals that can contaminate or degrade the 2D materials and deteriorate the final device performance. Current resist-free patterning methods are limited in throughput and typically require custom-made equipment. To address these limitations, we demonstrate the noncontact and resist-free patterning of platinum diselenide (PtSe₂), molybdenum disulfide (MoS₂), and graphene layers with nanoscale precision at high processing speed while preserving the integrity of the surrounding material. We use a commercial, off-the-shelf two-photon 3D printer to directly write patterns in the 2D materials with features down to 100 nm at a maximum writing speed of 50 mm/s. We successfully remove a continuous film of 2D material from a 200 μm × 200 μm substrate area in less than 3 s. Since two-photon 3D printers are becoming increasingly available in research laboratories and industrial facilities, we expect this method to enable fast prototyping of devices based on 2D materials across various research areas.

Ultrafast Laser Plasmonic Fabrication of Nanocrystals by Molecule Modulation for Photoresponse Multifunctional Structures

Nanotechnology has attracted wide research attention in constructing functional devices, including integrated circuits, transparent electrodes, and flexible actuators. Bottom-up fabrication is an important approach for functional structure manufacture, however, the controllable fabrication of complex architectures for practical applications has long been a challenge. Here, a novel strategy of laser plasmonic fabrication based on glue molecule modulation is proposed that can assemble metal nanocrystals into interconnected pattern networks. The plasmonic response of nanocrystals is adjustable with molecule modulation, which is a benefit for the effective formation of laser-induced localized oscillating electrons. The further decomposition of molecules and the movement of nanocrystal surface atoms can achieve the coalescence of assembled nanocrystals. It demonstrates that complex architectures can be controllably constructed by molecule level modulation. Through molecule-assisted laser plasmonic fabrication, the functional nanocrystals with enhanced photothermal capacity can be used for information encryption and soft machinery. This work expands the knowledge of bottom-up fabrication and provides a method for designing functional nanocrystals for a wide range of applications.

Femtosecond laser upgrading the quality of bismuth films to enhance ultra-broadband photodetection

Topological insulator bismuth has attracted considerable attention for the fabrication of room-temperature, wide bandwidth, and high-performance photodetectors due to the gapless edge state and insulating bulk state properties. However, both the photoelectric conversion and carrier transportation of the bismuth films are extremely affected by the surface morphology and grain boundaries to limit optoelectronic properties further. Here, we demonstrate a strategy of femtosecond laser treatment for upgrading the quality of bismuth films. After the treatment with proper laser parameters, the measurement of average surface roughness can be reduced from Ra = 44 nm to 6.9 nm, especially with accompany of the evident grain boundary elimination. Consequently, the photoresponsivity of the bismuth films increases approximately 2 times within an ultra-broad spectrum range from the visible to mid-infrared. This investigation suggests that the femtosecond laser treatment can help to benefit the performance of topological insulator ultra-broadband photodetectors.

High performance 1D-2D CuO/MoS2 photodetectors enhanced by femtosecond laser-induced contact engineering

The integration of 2D materials with other dimensional materials opens up rich possibilities for both fundamental physics and exotic nanodevices. However, current mixed-dimensional heterostructures often suffer from interfacial contact issues and environment-induced degradation, which severely limits their performance in electronics/optoelectronics. Herein, we demonstrate a novel BN-encapsulated CuO/MoS₂ 2D-1D van der Waals heterostructure photodetector with an ultrahigh photoresponsivity which is 10-fold higher than its previous 2D-1D counterparts. The interfacial contact state and photodetection capabilities of 2D-1D heterojunctions are significantly improved via femtosecond laser irradiation induced MoS₂ wrapping and contamination removal. These h-BN protected devices show highly sensitive, gate-tunable and robust photoelectronic properties. By controlling the gate and bias voltages, the device can achieve a photoresponsivity as high as 2500 A W^-1 in the forward bias mode, or achieve a high detectivity of 6.5 × 10¹¹ Jones and a typical rise time of 2.5 ms at reverse bias. Moreover, h-BN encapsulation effectively protects the mixed-dimensional photodetector from electrical depletion by gas molecules such as O₂ and H₂O during fs laser treatment or the operation process, thus greatly improving the stability and service life in harsh environments. This work provides a new way for the further development of high performance, low cost, and robust mixed-dimensional heterostructure photodetectors by femtosecond laser contact engineering.