Ultraviolet Photodetectors Based on Polymer Microwire Arrays toward Wearable Medical Devices

Recent progress in ultraviolet photodetectors based on low-dimensional materials

Ultraviolet (UV) photodetectors (PDs) are crucial for various advanced applications, yet conventional technologies suffer from limitations like low sensitivity, slow response, and high costs. Low-dimensional materials (LDMs) have emerged as a promising alternative due to their unique optoelectronic properties, including quantum confinement, tunable bandgaps, and high carrier mobility. While existing reviews on UV-PDs often focus narrowly on specific materials or structures, this review offers a comprehensive overview of LDM-based UV-PDs, covering 0D, 1D, and 2D materials and their heterostructures. We highlight recent advances that enhance UV-PD performance across the full UV spectrum, addressing challenges such as limited spectral range and high dark current. The review also explores diverse applications, from medicine to space science, demonstrating the growing impact of LDM-based UV-PDs. By focusing on the latest developments and addressing research gaps, this review provides essential insights into the future of UV photodetection.

Enhancing the Carrier Transport in Dielectric Passivation Layers via the Introduction of Trap States toward Improved CH3NH3PbI3/Si Heterojunction Photodetectors

Dielectric thin layers have commonly been employed to passivate interfacial defects to improve the performance of heterojunction photodetectors (PDs), whereas their insulating nature severely hinders the out-of-plane carrier transport, thereby limiting the improvements in performance. Fortunately, such a problem can be well addressed by modulating the charge carriers' transport process by introducing trap states. Herein, we reported the fabrication of much-improved CH3NH3PbI3/Si heterojunction PDs achieved by employing a HfO2+x thin film with high-density (OH)O (i.e., OH substitute for O lattice site) as the interfacial passivation layer. Theoretical studies suggested that (OH)O defects have a low formation energy and exhibit hole-trapping behaviors. Notably, the interfacial passivation effects of the HfO2+x thin films are comparable to those of the HfO2 thin films. In addition, the out-of-plane hole transport was enhanced in the HfO2+x thin films benefiting from the efficient (OH)O trap-assisted transport of holes. Finally, the performance of HfO2+x-passivated PDs was remarkably improved. It is believed that the results demonstrated in this work provide a promising strategy for the fabrication of efficient heterojunction PDs in the future.

Capillary-Assisted Confinement Assembly for Advanced Sensor Fabrication: From Superwetting Interfaces to Capillary Bridge Patterning

Precise patterning of sensing materials, particularly the long-range-ordered assembly of micro/nanostructures, is pivotal for improving sensor performance, facilitating miniaturization, and enabling seamless integration. This paper examines the importance of interfacial confined assembly in sensor patterning, including gas-liquid and liquid-liquid confined assembly, wettability-assisted or microstructure-assisted solid-liquid interfacial confined assembly, and tip-induced confined assembly. The application of capillary bridge confined assembly technology in chemical sensors, flexible electronics, and optoelectronics is highlighted. The advantages of capillary bridge confined assembly technology include the ability to achieve high-resolution patterning, scalability, and material arrangement in long-range order. It is, therefore, an ideal processing platform for next-generation sensors. Finally, the broad prospects of this technology in the miniaturization and integration of high-performance multifunctional sensors are discussed.

Ultraviolet Photodetector Using Nanostructured Hexagonal Boron Nitride with Gold Nanoparticles

Ultraviolet (UV) photodetectors play a crucial role in various applications, ranging from environmental monitoring to biomedical diagnostics. This paper presents the fabrication and characterization of a high-performance UV photodetector using hexagonal boron nitride (hBN) decorated with gold nanoparticles (AuNPs). The hBN flakes were mechanically exfoliated onto SiO2 substrates, and AuNPs were formed via thermal evaporation, resulting in the creation of a plasmonically active surface that enhanced light absorption and carrier dynamics. Raman spectroscopy, transmission electron microscopy, and electrical measurements were performed to comprehensively analyze the device structure and performance. The photodetector exhibited significantly improved photocurrent and responsivity under UV-B (306 nm) and UV-C (254 nm) illumination, with the responsivity reaching an increase of nearly two orders of magnitude compared to that of the pristine hBN device. These improvements are attributed to the synergistic effects of the wide bandgap of hBN and the localized surface plasmon resonance of the AuNPs. These findings demonstrate the potential of AuNP-decorated hBN for advanced UV photodetection applications and provide a pathway toward more efficient and miniaturized optoelectronic devices.

Recent Progress in Photodetectors: From Materials to Structures and Applications

Photodetectors are critical components in a wide range of applications, from imaging and sensing to communications and environmental monitoring. Recent advancements in material science have led to the development of emerging photodetecting materials, such as perovskites, polymers, novel two-dimensional materials, and quantum dots, which offer unique optoelectronic properties and high tunability. This review presents a comprehensive overview of the synthesis methodologies for these cutting-edge materials, highlighting their potential to enhance photodetection performance. Additionally, we explore the design and fabrication of photodetectors with novel structures and physics, emphasizing devices that achieve high figure-of-merit parameters, such as enhanced sensitivity, fast response times, and broad spectral detection. Finally, we discuss the demonstration of new applications enabled by these advanced photodetectors, including flexible and wearable devices, next-generation imaging systems, and environmental sensing technologies. Through this review, we aim to provide insights into the current trends and future directions in the field of photodetection, guiding further research and development in this rapidly evolving area.

Novel elastomeric spiropyran-doped poly(dimethylsiloxane) optical waveguide for UV sensing

Novel poly(dimethylsiloxane) (PDMS) doped with two different spiropyran derivatives (SP) were investigated as potential candidates for the preparation of elastomeric waveguides with UV-dependent optical properties. First, free-standing films were prepared and evaluated with respect to their photochromic response to UV irradiation. Kinetics, reversibility as well as photofatigue and refractive index of the SP-doped PDMS samples were assessed. Second, SP-doped PDMS waveguides were fabricated and tested as UV sensors by monitoring changes in the transmitted optical power of a visible laser (633 nm). UV sensing was successfully demonstrated by doping PDMS using one spiropyran derivative whose propagation loss was measured as 1.04 dB/cm at 633 nm, and sensitivity estimated at 115% change in transmitted optical power per unit change in UV dose. The decay and recovery time constants were measured at 42 and 107 s, respectively, with an average UV saturation dose of 0.4 J/cm2. The prepared waveguides exhibited a reversible and consistent response even under bending. The sensor parameters can be tailored by varying the waveguide length up to 21 cm, and are affected by white light and temperatures up to 70 ℃. This work is relevant to elastomeric optics, smart optical materials, and polymer optical waveguide sensors.

Optimal design of graphene-based plasmonic enhanced photodetector using PSO

In this paper, we report a graphene-based plasmonic photodetector optimized using the particle swarm optimization (PSO) algorithm and compatible with complementary metal-oxide-semiconductor (CMOS) technology. The proposed photodetector structure is designed to minimize fabrication challenges and reduce production costs compared to more complex alternatives. Graphene has been used for its unique properties in the detection region, titanium nitride (TiN) as a CMOS-compatible metal, and both to aid in plasmonic excitation. Photodetectors have key parameters influenced by multiple independent variables. However, practical constraints prevent thorough adjustment of all variables to achieve optimal parameter values, often resulting in analysis based on several simplified models. Here we optimize these variables by presenting a new approach in the field of photodetectors using the capabilities of the PSO algorithm. As a result, for the proposed device at the wavelength of 1550 nm, the voltage responsivity is 210.6215 V/W, the current responsivity is 3.7213 A/W, the ultra-compressed length is less than 3 μ m , and the specific detectivity is 2.566×10 7 Jones were obtained. Furthermore, the device in question works under the photothermoelectric effect (PTE) at zero bias and has zero dark current, which ultimately resulted in a very low noise equivalent power (NEP) of 4.5361 pW / Hz .

A self-powered photodetector through facile processing using polyethyleneimine/carbon quantum dots for highly sensitive UVC detection

Ultraviolet C (UVC) photodetectors have garnered considerable attention recently because the detection of UVC is critical for preventing skin damage in humans, monitoring environmental conditions, detecting power aging in facilities, and military applications. As UVC detectors are "solar-blind", they encounter less interference than other environmental signals, resulting in low disturbance levels. This study employed a natural precursor (glucose) and a one-step ultrasonic reaction procedure to prepare carbon quantum dots (CQDs), which served as a convenient and environmentally friendly material to combine with polyethyleneimine (PEI). The prepared materials were used to develop a self-powered, high-performance UVC photodetector. The thickness of the constitutive film was investigated in detail based on the conditions of the electron transport pathway and trap positions to further improve the performance of the PEI/CQD photodetectors. Under the optimized conditions, the photodetector could generate a strong signal (1.5 mA W-1 at 254 nm) and exhibit high detectability (1.8 × 1010 Jones at 254 nm), an ultrafast response, and long-term stability during the power supply sequence. The developed solar-blind UVC photodetector can be applied in various ways to monitor UVC in an affordable, straightforward, and precise manner.

Flexible and Stretchable Light-Emitting Diodes and Photodetectors for Human-Centric Optoelectronics

Optoelectronic devices with unconventional form factors, such as flexible and stretchable light-emitting or photoresponsive devices, are core elements for the next-generation human-centric optoelectronics. For instance, these deformable devices can be utilized as closely fitted wearable sensors to acquire precise biosignals that are subsequently uploaded to the cloud for immediate examination and diagnosis, and also can be used for vision systems for human-interactive robotics. Their inception was propelled by breakthroughs in novel optoelectronic material technologies and device blueprinting methodologies, endowing flexibility and mechanical resilience to conventional rigid optoelectronic devices. This paper reviews the advancements in such soft optoelectronic device technologies, honing in on various materials, manufacturing techniques, and device design strategies. We will first highlight the general approaches for flexible and stretchable device fabrication, including the appropriate material selection for the substrate, electrodes, and insulation layers. We will then focus on the materials for flexible and stretchable light-emitting diodes, their device integration strategies, and representative application examples. Next, we will move on to the materials for flexible and stretchable photodetectors, highlighting the state-of-the-art materials and device fabrication methods, followed by their representative application examples. At the end, a brief summary will be given, and the potential challenges for further development of functional devices will be discussed as a conclusion.

Disentangling the Role of the SnO Layer on the Pyro-Phototronic Effect in ZnO-Based Self-Powered Photodetectors

Self-powered photodetectors (PDs) have been recognized as one of the developing trends of next-generation optoelectronic devices. Herein, it is shown that by introducing a thin layer of SnO film between the Si substrate and the ZnO film, the self-powered photodetector Al/Si/SnO/ZnO/ITO exhibits a stable and uniform violet sensing ability with high photoresponsivity and fast response. The SnO layer introduces a built-in electrostatic field to highly enhance the photocurrent by over 1000%. By analyzing energy diagrams of the p-n junction, the underlying physical mechanism of the self-powered violet PDs is carefully illustrated. A high photo-responsivity (R) of 93 mA W-1 accompanied by a detectivity (D*) of 3.1 × 1010 Jones are observed under self-driven conditions, when the device is exposed to 405 nm excitation laser wavelength, with a laser power density of 36 mW cm-2 and at a chopper frequency of 400 Hz. The Si/SnO/ZnO/ITO device shows an enhancement of 3067% in responsivity when compared to the Al/Si/ZnO/ITO. The photodetector holds an ultra-fast response of ≈ 2 µs, which is among the best self-powered photodetectors reported in the literature based on ZnO.

D-A Structural Oligomers Containing Benzothiadiazole or Benzophenone as Novel Multifunctional Materials for Electrochromic and Photodetector Devices

In this study, six conjugated oligomers containing D-A structures were synthesized using the Stille coupling reaction and named PHZ1-PHZ6. All the oligomers utilized demonstrated excellent solubilities in common solvents and notable color variations in the domain of electrochromic characteristics. By designing and synthesizing two electron-donating groups modified with alkyl side chains and a common aromatic electron-donating group, as well as cross-binding them with two electron-withdrawing groups with lower molecular weights, the six oligomers presented good color-rendering efficiencies, among which PHZ4 presented the best color-rendering efficiency (283 cm²·C^-1). The products also demonstrated excellent electrochemical switching-response times. PHZ5 presented the fastest coloring time (0.7 s), PHZ3 and PHZ6 presented the fastest bleaching times (2.1 s). Following 400 s of cycling activity, all the oligomers under study showed good working stabilities. Moreover, three kinds of photodetectors based on conducting oligomers were prepared, and the experimental results show that the three photodetectors have better specific detection performances and gains. These characteristics indicate that oligomers containing D-A structures are suitable for use as electrochromic and photodetector materials in the research.

CuSCN/Si heterojunction near-infrared photodetector based on micro/nano light-trapping structure

In this paper, high-performance CuSCN/Si heterojunction near-infrared photodetectors were successfully prepared using nanoscale light-trapping optical structures. Various light-trapping structures of ortho-pyramids, inverted pyramids and silicon nanowires were prepared on silicon substrates. Then, CuSCN films were spin-coated on silicon substrates with high crystalline properties for the assembly of CuSCN/Si photodetectors. Their reflectance spectra and interfacial passivation properties were characterized, demonstrating their superiority of light-trapping structures in high light response. Under the irradiation of 980 nm near-infrared light, a maximum responsivity of 2.88 A W^-1at -4 V bias and a specific detectivity of 5.427 × 10¹⁰Jones were obtained in the CuSCN/Si heterojunction photodetectors prepared on planner silicon due to 3.6 eV band gap of CuSCN. The substrates of the light-trapping structure were then applied to the CuSCN/Si heterojunction photodetectors. A maximum responsivity of 10.16 A W^-1and a maximum specific detectivity of 1.001 × 10¹¹Jones were achieved under the 980 nm near-infrared light irradiation and -4 V bias, demonstrating the advanced performance of CuSCN/Si heterojunction photodetectors with micro-nano light-trapping substrates in the field of near-infrared photodetection compared to other silicon-based photodetectors.