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Liu W, Jiang J, Li Z, Gao B, Liu C, Liu C, Hao W, Fan R, Liu J, Yu T, Zou Z, Li Z. Effective Hole Utilization for Atomically Dispersed Low-Coordination Molybdenum Accelerating Photocatalytic C─H Activation. Angew Chem Int Ed Engl 2025:e202507312. [PMID: 40317797 DOI: 10.1002/anie.202507312] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/01/2025] [Revised: 04/22/2025] [Accepted: 05/02/2025] [Indexed: 05/07/2025]
Abstract
Photocatalytic acceptorless dehydrogenation of alcohols offers a promising strategy to produce the corresponding carbonyl compounds and clean fuel H2. However, the sluggish kinetics of the alkoxy C─H bond cleavage attributes to the inefficient utilization of photogenerated holes greatly restricts the photocatalytic activity. Here we develmically dispersed low-coordination Mo on ultrathin ZnIn2S4 nanosheets that can greatly accelerate photocatalytic C─H activation. An internal quantum efficiency of 45.2% at 400 nm together with 99% benzaldehyde (BAD) selectivity is achieved using benzyl alcohol (BA) as a model substrate. Extensive experimental characterizations and theoretical calculations reveal that the low-coordination Mo tunes the local atomic configuration of highest occupied molecular orbital to trap holes produced under photoexcitation within picoseconds. Moreover, the incorporated site-specific Mo greatly improves the lifetime and diffusion length of photogenerated holes and optimizes the driving force of alkoxy C─H activation, which are responsible for the excellent performance. This work marks a significant stride to enhance the utilization efficiency of holes for promoting photocatalytic C─H activation.
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Affiliation(s)
- Wangxi Liu
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, 210093, P.R. China
- Jiangsu Key Laboratory for Nano Technology, College of Engineering and Applied Sciences, Nanjing University, Nanjing, 210093, P.R. China
| | - Jingwen Jiang
- Jiangsu Key Laboratory for Nano Technology, College of Engineering and Applied Sciences, Nanjing University, Nanjing, 210093, P.R. China
| | - Zhonghua Li
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, 210093, P.R. China
- Jiangsu Key Laboratory for Nano Technology, College of Engineering and Applied Sciences, Nanjing University, Nanjing, 210093, P.R. China
| | - Bin Gao
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, 210093, P.R. China
- Jiangsu Key Laboratory for Nano Technology, College of Engineering and Applied Sciences, Nanjing University, Nanjing, 210093, P.R. China
| | - Changhao Liu
- Jiangsu Key Laboratory for Nano Technology, College of Engineering and Applied Sciences, Nanjing University, Nanjing, 210093, P.R. China
| | - Chen Liu
- Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing, 100049, P.R. China
| | - Weichang Hao
- School of Physics and Centre of Quantum and Matter Sciences, International Research Institute for Multidisciplinary Science, Beihang University, Beijing, 100191, P.R. China
| | - Rongli Fan
- Jiangsu Key Laboratory for Nano Technology, College of Engineering and Applied Sciences, Nanjing University, Nanjing, 210093, P.R. China
| | - Jianming Liu
- Jiangsu Key Laboratory for Nano Technology, College of Engineering and Applied Sciences, Nanjing University, Nanjing, 210093, P.R. China
| | - Tao Yu
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, 210093, P.R. China
| | - Zhigang Zou
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, 210093, P.R. China
- Jiangsu Key Laboratory for Nano Technology, College of Engineering and Applied Sciences, Nanjing University, Nanjing, 210093, P.R. China
| | - Zhaosheng Li
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, 210093, P.R. China
- Jiangsu Key Laboratory for Nano Technology, College of Engineering and Applied Sciences, Nanjing University, Nanjing, 210093, P.R. China
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Ritter K, Gurieva G, Eckner S, Schwiddessen R, d'Acapito F, Welter E, Schorr S, Schnohr CS. Atomic scale structure and bond stretching force constants in stoichiometric and off-stoichiometric kesterites. J Chem Phys 2023; 159:154705. [PMID: 37855314 DOI: 10.1063/5.0169755] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/28/2023] [Accepted: 09/29/2023] [Indexed: 10/20/2023] Open
Abstract
The deviation from stoichiometry and the understanding of its consequences are key factors for the application of kesterites as solar cell absorbers. Therefore, this study investigates the local atomic structure of off-stoichiometric Cu2ZnSnS4 (CZTS), Cu2ZnSnSe4 (CZTSe) and Cu2ZnGeSe4 (CZGSe) by means of Extended X-ray Absorption Fine Structure Spectroscopy. Temperature dependent measurements yield the bond stretching force constants of all cation-anion bonds in stoichiometric CZTS and CZTSe and nearly stoichiometric CZGSe. Low temperature measurements allow high precision analysis of the influence of off-stoichiometry on the element specific average bond lengths and their variances. The overall comparison between the materials is in excellent agreement with measures like ionic/atomic radii and bond ionicities. Furthermore, the small uncertainties allow the identification of systematic trends in the Cu-Se and Zn-Se bond lengths of CZTSe and CZGSe. These trends are discussed in context of the types and concentrations of certain point defects, which gives insight into the possible local configurations and their influence on the average structural parameters. The findings complement the understanding of the effect of off-stoichiometry on the local structure of kesterites, which affects their electronic properties and thus their application for solar cells.
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Affiliation(s)
- Konrad Ritter
- Felix-Bloch-Institut für Festkörperphysik, Universität Leipzig, Linnéstraße 5, 04103 Leipzig, Germany
- Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena, Germany
| | - Galina Gurieva
- Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin, Germany
| | - Stefanie Eckner
- Felix-Bloch-Institut für Festkörperphysik, Universität Leipzig, Linnéstraße 5, 04103 Leipzig, Germany
- Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena, Germany
| | - René Schwiddessen
- Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin, Germany
| | | | - Edmund Welter
- Deutsches Elektronen-Synchrotron DESY, Notkestr. 85, 22607 Hamburg, Germany
| | - Susan Schorr
- Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin, Germany
- Institut für Geologische Wissenschaften, Freie Universität Berlin, Malteserstr. 74-100, 12249 Berlin, Germany
| | - Claudia S Schnohr
- Felix-Bloch-Institut für Festkörperphysik, Universität Leipzig, Linnéstraße 5, 04103 Leipzig, Germany
- Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena, Germany
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Kumar P, Vahidzadeh E, Alam KM, Laishram D, Cui K, Shankar K. Radial Nano-Heterojunctions Consisting of CdS Nanorods Wrapped by 2D CN:PDI Polymer with Deep HOMO for Photo-Oxidative Water Splitting, Dye Degradation and Alcohol Oxidation. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:nano13091481. [PMID: 37177028 PMCID: PMC10180281 DOI: 10.3390/nano13091481] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/26/2023] [Revised: 04/17/2023] [Accepted: 04/19/2023] [Indexed: 05/15/2023]
Abstract
Solar energy harvesting using semiconductor photocatalysis offers an enticing solution to two of the biggest societal challenges, energy scarcity and environmental pollution. After decades of effort, no photocatalyst exists which can simultaneously meet the demand for excellent absorption, high quantum efficiency and photochemical resilience/durability. While CdS is an excellent photocatalyst for hydrogen evolution, pollutant degradation and organic synthesis, photocorrosion of CdS leads to the deactivation of the catalyst. Surface passivation of CdS with 2D graphitic carbon nitrides (CN) such as g-C3N4 and C3N5 has been shown to mitigate the photocorrosion problem but the poor oxidizing power of photogenerated holes in CN limits the utility of this approach for photooxidation reactions. We report the synthesis of exfoliated 2D nanosheets of a modified carbon nitride constituted of tris-s-triazine (C6N7) linked pyromellitic dianhydride polydiimide (CN:PDI) with a deep oxidative highest occupied molecular orbital (HOMO) position, which ensures sufficient oxidizing power for photogenerated holes in CN. The heterojunction formed by the wrapping of mono-/few layered CN:PDI on CdS nanorods (CdS/CN:PDI) was determined to be an excellent photocatalyst for oxidation reactions including photoelectrochemical water splitting, dye decolorization and the photocatalytic conversion of benzyl alcohol to benzaldehyde. Extensive structural characterization using HR-TEM, Raman, XPS, etc., confirmed wrapping of few-layered CN:PDI on CdS nanorods. The increased photoactivity in CdS/CN:PDI catalyst was ascribed to facile electron transfer from CdS to CN:PDI in comparison to CdS/g-C3N4, leading to an increased electron density on the surface of the photocatalyst to drive chemical reactions.
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Affiliation(s)
- Pawan Kumar
- Department of Electrical and Computer Engineering, University of Alberta, 9211-116 St., Edmonton, AB T6G 1H9, Canada
- Department of Chemical and Petroleum Engineering, University of Calgary, 2500 University Drive NW, Calgary, AB T2N 1N4, Canada
| | - Ehsan Vahidzadeh
- Department of Electrical and Computer Engineering, University of Alberta, 9211-116 St., Edmonton, AB T6G 1H9, Canada
| | - Kazi M Alam
- Department of Electrical and Computer Engineering, University of Alberta, 9211-116 St., Edmonton, AB T6G 1H9, Canada
- Nanotechnology Research Centre, National Research Council of Canada, Edmonton, AB T6G 2M9, Canada
| | - Devika Laishram
- Department of Electrical and Computer Engineering, University of Alberta, 9211-116 St., Edmonton, AB T6G 1H9, Canada
- Department of Chemistry, Indian Institute of Technology Jodhpur, Jodhpur 34201, India
| | - Kai Cui
- Nanotechnology Research Centre, National Research Council of Canada, Edmonton, AB T6G 2M9, Canada
| | - Karthik Shankar
- Department of Electrical and Computer Engineering, University of Alberta, 9211-116 St., Edmonton, AB T6G 1H9, Canada
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Wu T, Hu J, Chen S, Zheng Z, Cathelinaud M, Ma H, Su Z, Fan P, Zhang X, Liang G. Energy Band Alignment by Solution-Processed Aluminum Doping Strategy toward Record Efficiency in Pulsed Laser-Deposited Kesterite Thin-Film Solar Cell. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 36880785 DOI: 10.1021/acsami.2c22174] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Kesterite-based Cu2ZnSnS4 (CZTS) thin-film photovoltaics involve a serious interfacial dilemma, leading to severe recombination of carriers and insufficient band alignment at the CZTS/CdS heterojunction. Herein, an interface modification scheme by aluminum doping is introduced for CZTS/CdS via a spin coating method combined with heat treatment. The thermal annealing of the kesterite/CdS junction drives the migration of doped Al from CdS to the absorber, achieving an effective ion substitution and interface passivation. This condition greatly reduces interface recombination and improves device fill factor and current density. The JSC and FF of the champion device increased from 18.01 to 22.33 mA cm-2 and 60.24 to 64.06%, respectively, owing to the optimized band alignment and remarkably enhanced charge carrier generation, separation, and transport. Consequently, a photoelectric conversion efficiency (PCE) of 8.65% was achieved, representing the highest efficiency in CZTS thin-film solar cells fabricated by pulsed laser deposition (PLD) to date. This work proposed a facile strategy for interfacial engineering treatment, opening a valuable avenue to overcome the efficiency bottleneck of CZTS thin-film solar cells.
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Affiliation(s)
- Tong Wu
- Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, Guangdong, P. R. China
- CNRS, ISCR (Institut des Sciences Chimiques de Rennes) UMR 6226, Univ Rennes, Rennes F-35000, France
| | - Juguang Hu
- Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, Guangdong, P. R. China
| | - Shuo Chen
- Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, Guangdong, P. R. China
| | - Zhuanghao Zheng
- Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, Guangdong, P. R. China
| | - Michel Cathelinaud
- Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, Guangdong, P. R. China
| | - Hongli Ma
- CNRS, ISCR (Institut des Sciences Chimiques de Rennes) UMR 6226, Univ Rennes, Rennes F-35000, France
| | - Zhenghua Su
- Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, Guangdong, P. R. China
| | - Ping Fan
- Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, Guangdong, P. R. China
| | - Xianghua Zhang
- CNRS, ISCR (Institut des Sciences Chimiques de Rennes) UMR 6226, Univ Rennes, Rennes F-35000, France
| | - Guangxing Liang
- Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, Guangdong, P. R. China
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