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Erbas B, Conde-Rubio A, Liu X, Pernollet J, Wang Z, Bertsch A, Penedo M, Fantner G, Banerjee M, Kis A, Boero G, Brugger J. Combining thermal scanning probe lithography and dry etching for grayscale nanopattern amplification. MICROSYSTEMS & NANOENGINEERING 2024; 10:28. [PMID: 38405129 PMCID: PMC10891065 DOI: 10.1038/s41378-024-00655-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/25/2023] [Revised: 01/03/2024] [Accepted: 01/07/2024] [Indexed: 02/27/2024]
Abstract
Grayscale structured surfaces with nanometer-scale features are used in a growing number of applications in optics and fluidics. Thermal scanning probe lithography achieves a lateral resolution below 10 nm and a vertical resolution below 1 nm, but its maximum depth in polymers is limited. Here, we present an innovative combination of nanowriting in thermal resist and plasma dry etching with substrate cooling, which achieves up to 10-fold amplification of polymer nanopatterns into SiO2 without proportionally increasing surface roughness. Sinusoidal nanopatterns in SiO2 with 400 nm pitch and 150 nm depth are fabricated free of shape distortion after dry etching. To exemplify the possible applications of the proposed method, grayscale dielectric nanostructures are used for scalable manufacturing through nanoimprint lithography and for strain nanoengineering of 2D materials. Such a method for aspect ratio amplification and smooth grayscale nanopatterning has the potential to find application in the fabrication of photonic and nanoelectronic devices.
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Affiliation(s)
- Berke Erbas
- Microsystems Laboratory, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, 1015 Switzerland
| | - Ana Conde-Rubio
- Microsystems Laboratory, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, 1015 Switzerland
- Present Address: Institute of Materials Science of Barcelona ICMAB-CSIC, Campus UAB, Bellaterra, 08193 Spain
| | - Xia Liu
- Microsystems Laboratory, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, 1015 Switzerland
- Present Address: School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081 China
| | - Joffrey Pernollet
- Center of MicroNanoTechnology (CMi), EPFL, Lausanne, 1015 Switzerland
| | - Zhenyu Wang
- Laboratory of Nanoscale Electronics and Structures, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, 1015 Switzerland
| | - Arnaud Bertsch
- Microsystems Laboratory, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, 1015 Switzerland
| | - Marcos Penedo
- Laboratory for Bio- and Nano- Instrumentation, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, 1015 Switzerland
| | - Georg Fantner
- Laboratory for Bio- and Nano- Instrumentation, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, 1015 Switzerland
| | - Mitali Banerjee
- Laboratory of Quantum Physics, Topology and Correlations, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, 1015 Switzerland
| | - Andras Kis
- Laboratory of Nanoscale Electronics and Structures, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, 1015 Switzerland
| | - Giovanni Boero
- Microsystems Laboratory, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, 1015 Switzerland
| | - Juergen Brugger
- Microsystems Laboratory, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, 1015 Switzerland
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2
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Zhou H, Zhang C, Gao A, Shi E, Guo Y. Patterned growth of two-dimensional atomic layer semiconductors. Chem Commun (Camb) 2024; 60:943-955. [PMID: 38168791 DOI: 10.1039/d3cc04866g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/05/2024]
Abstract
Transition metal dichalcogenides (TMDCs), which are representative of two-dimensional (2D) semiconductors, have attracted tremendous attention over the last two decades. TMDCs are regarded as potential candidates in modern nano- and optoelectronic applications due to their unique crystal structures and outstanding electronic and optoelectronic properties. For practical use, 2D semiconductors need to be fabricated with diverse morphologies for integration into electronic devices and to perform different functionalities. Controlled patterning synthesis with programmable geometries is therefore highly desired. We review state-of-the-art strategies for the patterned growth of atomic layer TMDCs and their heterostructures, including additive manufacturing and subtractive manufacturing for patterning single TMDC materials and the introduction of other low-dimensional nanomaterials as growth templates or hetero-atoms for element conversion in patterning TMDC heterostructures. The optoelectronic and electronic applications of the as-grown monolayer TMDC patterns are introduced. Future challenges and the prospects for the patterned growth of 2D semiconductors are discussed based on present achievements.
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Affiliation(s)
- Hao Zhou
- Key Laboratory of Polar Materials and Devices(MOE), Department of Electronics, East China Normal University, Shanghai, 200241, China.
- Key Laboratory of Excited-State Materials of Zhejiang Province, State Key Laboratory of Silicon Materials, Department of Chemistry, Zhejiang University, Hangzhou 310058, China.
| | - Chiyu Zhang
- Key Laboratory of Excited-State Materials of Zhejiang Province, State Key Laboratory of Silicon Materials, Department of Chemistry, Zhejiang University, Hangzhou 310058, China.
| | - Anran Gao
- Key Laboratory of Polar Materials and Devices(MOE), Department of Electronics, East China Normal University, Shanghai, 200241, China.
| | - Enzheng Shi
- School of Engineering, Westlake University, Hangzhou, 310030, China.
| | - Yunfan Guo
- Key Laboratory of Excited-State Materials of Zhejiang Province, State Key Laboratory of Silicon Materials, Department of Chemistry, Zhejiang University, Hangzhou 310058, China.
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3
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Ramò L, Giordano MC, Ferrando G, Canepa P, Telesio F, Repetto L, Buatier de Mongeot F, Canepa M, Bisio F. Thermal Scanning-Probe Lithography for Broad-Band On-Demand Plasmonic Nanostructures on Transparent Substrates. ACS APPLIED NANO MATERIALS 2023; 6:18623-18631. [PMID: 37854851 PMCID: PMC10580238 DOI: 10.1021/acsanm.3c04398] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/14/2023] [Accepted: 09/21/2023] [Indexed: 10/20/2023]
Abstract
Thermal scanning-probe lithography (t-SPL) is a high-resolution nanolithography technique that enables the nanopatterning of thermosensitive materials by means of a heated silicon tip. It does not require alignment markers and gives the possibility to assess the morphology of the sample in a noninvasive way before, during, and after the patterning. In order to exploit t-SPL at its peak performances, the writing process requires applying an electric bias between the scanning hot tip and the sample, thereby restricting its application to conductive, optically opaque, substrates. In this work, we show a t-SPL-based method, enabling the noninvasive high-resolution nanolithography of photonic nanostructures onto optically transparent substrates across a broad-band visible and near-infrared spectral range. This was possible by intercalating an ultrathin transparent conductive oxide film between the dielectric substrate and the sacrificial patterning layer. This way, nanolithography performances comparable with those typically observed on conventional semiconductor substrates are achieved without significant changes of the optical response of the final sample. We validated this innovative nanolithography approach by engineering periodic arrays of plasmonic nanoantennas and showing the capability to tune their plasmonic response over a broad-band visible and near-infrared spectral range. The optical properties of the obtained systems make them promising candidates for the fabrication of hybrid plasmonic metasurfaces supported onto fragile low-dimensional materials, thus enabling a variety of applications in nanophotonics, sensing, and thermoplasmonics.
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Affiliation(s)
- Lorenzo Ramò
- OptMatLab,
Dipartimento di Fisica, Università
di Genova, Via Dodecaneso 33, I-16146 Genova, Italy
| | - Maria Caterina Giordano
- LabNano,
Dipartimento di Fisica, Università
di Genova, Via Dodecaneso
33, I-16146 Genova, Italy
| | - Giulio Ferrando
- LabNano,
Dipartimento di Fisica, Università
di Genova, Via Dodecaneso
33, I-16146 Genova, Italy
| | - Paolo Canepa
- OptMatLab,
Dipartimento di Fisica, Università
di Genova, Via Dodecaneso 33, I-16146 Genova, Italy
| | - Francesca Telesio
- Dipartimento
di Fisica, Università di Genova, Via Dodecaneso 33, I-16146 Genova, Italy
| | - Luca Repetto
- Nanomed
Laboratories, Dipartimento di Fisica, Università
di Genova, Via Dodecaneso
33, I-16146 Genova, Italy
| | | | - Maurizio Canepa
- OptMatLab,
Dipartimento di Fisica, Università
di Genova, Via Dodecaneso 33, I-16146 Genova, Italy
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4
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Batool S, Idrees M, Han ST, Roy VAL, Zhou Y. Electrical Contacts With 2D Materials: Current Developments and Future Prospects. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2206550. [PMID: 36587964 DOI: 10.1002/smll.202206550] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/24/2022] [Revised: 12/07/2022] [Indexed: 06/17/2023]
Abstract
Current electrical contact models are occasionally insufficient at the nanoscale owing to the wide variations in outcomes between 2D mono and multi-layered and bulk materials that result from their distinctive electrostatics and geometries. Contrarily, devices based on 2D semiconductors present a significant challenge due to the requirement for electrical contact with resistances close to the quantum limit. The next generation of low-power devices is already hindered by the lack of high-quality and low-contact-resistance contacts on 2D materials. The physics and materials science of electrical contact resistance in 2D materials-based nanoelectronics, interface configurations, charge injection mechanisms, and numerical modeling of electrical contacts, as well as the most pressing issues that need to be resolved in the field of research and development, will all be covered in this review.
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Affiliation(s)
- Saima Batool
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Muhammad Idrees
- Additive Manufacturing Institute, College of Mechatronics and Control Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Su-Ting Han
- College of Electronics Science & Technology, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Vellaisamy A L Roy
- James Watt School of Engineering, University of Glasgow, Glasgow, G12 8QQ, UK
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
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