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Jiang J, Shi M, Xia Z, Cheng Y, Chu Z, Zhang W, Li J, Yin Z, You J, Zhang X. Efficient pure-red perovskite light-emitting diodes with strong passivation via ultrasmall-sized molecules. SCIENCE ADVANCES 2024; 10:eadn5683. [PMID: 38701203 PMCID: PMC11067999 DOI: 10.1126/sciadv.adn5683] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/18/2023] [Accepted: 04/02/2024] [Indexed: 05/05/2024]
Abstract
Perovskite light-emitting diodes (PeLEDs) have attracted great attention in recent years; however, the halogen vacancy defects in perovskite notably hamper the development of high-efficiency devices. Previously, large-sized passivation agents have been usually used, while the effect of defect passivation is limited due to the weak bonding or the large space steric hindrance. Here, we predict that the ultrasmall-sized formate (Fa) and acetate (Ac) have more efficient passivation ability because of the stronger binding with the perovskite, as demonstrated by density functional theory calculation. We introduce ultrasmall-sized cesium salts (CsFa/CsAc) into buried interface, which can also diffuse into the bulk, resulting in both buried interface and bulk passivation. In addition, the improved perovskite growth has been found due to the enhanced hydrophily after introducing CsFa/CsAc as additive. According to these advantages, a pure-red PeLED with 24.2% efficiency at 639 nm has been achieved.
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Affiliation(s)
- Ji Jiang
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Mingming Shi
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Zhengchang Xia
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Yong Cheng
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Zema Chu
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Wei Zhang
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
| | - Jingzhen Li
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Zhigang Yin
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Jingbi You
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Xingwang Zhang
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
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Zhao B, Chen H, Zhu Z, Yu X, Huang W, Gao S, Li Y. Polycrystalline Lead-Free Perovskite Direct X-Ray Detectors with High Durability and Low Limit of Detection via Low-Temperature Coating. ACS APPLIED MATERIALS & INTERFACES 2024; 16:6113-6121. [PMID: 38270060 DOI: 10.1021/acsami.3c16581] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/26/2024]
Abstract
Direct X-ray detectors represent a transformative technology in the realm of radiography and imaging. The double halide-based perovskite cesium silver bismuth bromide (Cs2AgBiBr6) has emerged as a promising material for use in direct X-ray imaging, owing to its nontoxic composition, strong X-ray absorption, decent charge mobility lifetime product (μτ), and low-cost preparation. However, formidable issues related to scalability and ion migration, stemming from intrinsic factors such as halogen vacancies and grain boundaries, have presented significant impediments. These issues have been associated with substantial noise, baseline instability, and a curtailment of detection performance. In response to these multifaceted challenges, we propose a slurry-based in situ treatment technique for fabricating robust Cs2AgBiBr6 thick films. This novel approach adeptly mitigates halogen vacancies, actively passivates grain boundaries, and concurrently elevates the ion migration activation energy, thus effectively suppressing ion migration. Consequently, the obtained X-ray detector exhibits excellent operating stability with minimal signal drift of 8.5 × 10-9 nA cm-1 s-1 V-1 and achieves a remarkable 385% increase in sensitivity with a limit of detection as low as 7.8 nGyair s-1. These results mark a significant step toward the development of high-performance and long-lasting lead-free perovskite direct X-ray detectors.
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Affiliation(s)
- Bo Zhao
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
| | - Huiwen Chen
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
| | - Ziyao Zhu
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
| | - Xuefeng Yu
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
| | - Weixiong Huang
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
| | - Sheng Gao
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
| | - Yunlong Li
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
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