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Wang R, Ma W, Feng Q, Yuan Y, Geng C, Xu S. Toward Ultra-stable Barrier-free Quantum Dots-Color Conversion Film via Zinc Phenylbutyrate Modification. ACS APPLIED MATERIALS & INTERFACES 2025; 17:18790-18799. [PMID: 40066937 DOI: 10.1021/acsami.5c01384] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/28/2025]
Abstract
Quantum dot (QD) color conversion films (CCFs) hold significant promise for advancing display technologies with their superior color performance and efficiency. However, achieving long-term stability in QD-CCFs without additional air-barrier film coatings remains a challenge. Here, we develop a surface passivation strategy using zinc phenylbutyrate (Zn(PA)2) to modify QDs through a trioctylphosphine-mediated surface reaction, which results in the selective capping of surface sulfur atoms by zinc-monophenylbutyrate. Density functional theory calculations and multiple-washing tests reveal robust -ZnPA binding that effectively passivates the QD surface and enhances resistance to environmental conditions. Moreover, the phenylbutyrate groups enhance the solubility of QDs in styrene, facilitating their copolymerization to create QD-PS CCFs with high QD concentration, excellent light uniformity, and long-term stability even after 500 h of water immersion and photoaging. CCFs incorporating mixtures of green and red QDs achieve a wide color gamut exceeding 120% of the NTSC standard, demonstrating the advantage of this approach for enhancing the color performance of the QD-CCFs.
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Affiliation(s)
- Runchi Wang
- School of Electronics and Information Engineering, Hebei University of Technology, Tianjin 300401, China
| | - Wei Ma
- School of Electronics and Information Engineering, Hebei University of Technology, Tianjin 300401, China
| | - Qian Feng
- School of Electronics and Information Engineering, Hebei University of Technology, Tianjin 300401, China
| | - Yaqian Yuan
- School of Electronics and Information Engineering, Hebei University of Technology, Tianjin 300401, China
| | - Chong Geng
- School of Electronics and Information Engineering, Hebei University of Technology, Tianjin 300401, China
| | - Shu Xu
- School of Electronics and Information Engineering, Hebei University of Technology, Tianjin 300401, China
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2
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Huang J, Li Z, Zhu Y, Yang L, Lin X, Li Y, Wang Y, Wang Y, Fu Y, Xu W, Huang M, Li D, Pan A. Monolithic Integration of Full-Color Microdisplay Screen with Sub-5 µm Quantum-Dot Pixels. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2409025. [PMID: 39267409 DOI: 10.1002/adma.202409025] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/24/2024] [Revised: 08/22/2024] [Indexed: 09/17/2024]
Abstract
Monolithic integration of color-conversion materials onto blue-backlight micro-light-emitting-diodes (micro-LEDs) has emerged as a promising strategy for achieving full-color microdisplay devices. However, this approach still encounters challenges such as the blue-backlight leakage and the poor fabrication yield rate due to unsatisfied quantum dot (QD) material and fabrication process. Here, the monolithic integration of 0.39-inch micro-display screens displaying colorful pictures and videos are demonstrated, which are enabled by creating interfacial chemical bonds for wafer-scale adhesion of sub-5 µm QD-pixels on blue-backlight micro-LED wafer. The ligand molecule with chlorosulfonyl and silane groups is selected as the synthesis ligand and surface treatment material, facilitating the preparation of high-efficiency QD photoresist and the formation of robust chemical bonds for pixel integration. This is a leading record in micro-display devices achieving the highest brightness larger than 400 thousand nits, the ultrahigh resolution of 3300 PPI, the wide color gamut of 130.4% NTSC, and the ultimate performance of service life exceeding 1000 h. These results extend the mature integrated circuit technique into the manufacture of micro-display device, which also lead the road of industrialization process of full-color micro-LEDs.
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Affiliation(s)
- Jianhua Huang
- Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Ziwei Li
- Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, 410082, P. R. China
- School of Physics and Electronics, Hunan Normal University, Changsha, 410081, P. R. China
| | - Youliang Zhu
- Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, 410082, P. R. China
- Innovation Technology (Suzhou) Co., Ltd, Suzhou, 215011, P. R. China
| | - Liuli Yang
- Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Xiao Lin
- Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, 410082, P. R. China
- Innovation Technology (Suzhou) Co., Ltd, Suzhou, 215011, P. R. China
| | - Yi Li
- Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Yizhe Wang
- Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Yazhou Wang
- Innovation Technology (Suzhou) Co., Ltd, Suzhou, 215011, P. R. China
| | - Yi Fu
- LatticePower Co., Ltd, Nanchang, 330038, P. R. China
| | - Weidong Xu
- Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Ming Huang
- Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Dong Li
- Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Anlian Pan
- Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, 410082, P. R. China
- School of Physics and Electronics, Hunan Normal University, Changsha, 410081, P. R. China
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Dai BL, Ji JW, Wu BH, Chen KA, Kuroda H, Kou HC, Akada T, Li CY. Investigation and comparison of the influence of modified DBR and yellow color filters for quantum dot color conversion-based micro LED applications. Heliyon 2024; 10:e35492. [PMID: 39220994 PMCID: PMC11363836 DOI: 10.1016/j.heliyon.2024.e35492] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/29/2024] [Revised: 07/29/2024] [Accepted: 07/30/2024] [Indexed: 09/04/2024] Open
Abstract
This study compares how a modified distributed Bragg reflector (DBR) and yellow color filter (Y-CF) increase the color purity, viewing angle, and brightness of the quantum dot color conversion layer (QDCC) for micro-LED displays. We designed and built a 53-layer high-performance modified DBR with almost total blue leakage filtering (T %: 0.16 %) and very high G/R band transmittance (T %: 96.97 %) for comparison. We also use a Y-CF that filters blue light (T %: 0.84 %) and has good G/R band transmittance (T %: 94.83 %). Due to DBR's angle dependency effect, the modified DBR/QDCC structure offers a remarkable color gamut (117.41 % NTSC) at the forward viewing angle, but this rapidly diminishes beyond 30°. The Y-CF/QDCC structure retains 116 % NTSC color at all viewing angles. Because of its consistent color performance at all viewing angles, sufficient brightness, and outstanding color gamut, the Y-CF/QDCC structure is the best option for contemporary QDCC-based micro-LED displays.
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Affiliation(s)
- Bao-Le Dai
- Graduate School of Electronic Engineering and Technology, National Yunlin University of Science and Technology, Douliu, 640301, Taiwan
| | - Jing-Wei Ji
- Graduate School of Electronic Engineering and Technology, National Yunlin University of Science and Technology, Douliu, 640301, Taiwan
| | - Bing-Han Wu
- Graduate School of Electronic Engineering and Technology, National Yunlin University of Science and Technology, Douliu, 640301, Taiwan
| | - Kuan-An Chen
- SynthEdge Advanced Materials Corp. Ltd., Taoyuan, 327008, Taiwan
| | - Hideki Kuroda
- Otsuka Tech Electronics Corp. Ltd., Tainan, 700019, Taiwan
| | - Hung-Chen Kou
- Otsuka Tech Electronics Corp. Ltd., Tainan, 700019, Taiwan
| | - Tomohiro Akada
- Otsuka Tech Electronics Corp. Ltd., Tainan, 700019, Taiwan
| | - Chun-Yu Li
- Department of Electronic Engineering, National Yunlin University of Science and Technology, Douliu, 640301, Taiwan
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Ha ST, Lassalle E, Liang X, Do TTH, Foo I, Shendre S, Durmusoglu EG, Valuckas V, Adhikary S, Paniagua-Dominguez R, Demir HV, Kuznetsov AI. Dual-Resonance Nanostructures for Color Downconversion of Colloidal Quantum Emitters. NANO LETTERS 2023; 23:11802-11808. [PMID: 38085099 DOI: 10.1021/acs.nanolett.3c03786] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/28/2023]
Abstract
We present a dual-resonance nanostructure made of a titanium dioxide (TiO2) subwavelength grating to enhance the color downconversion efficiency of CdxZn1-xSeyS1-y colloidal quantum dots (QDs) emitting at ∼530 nm when excited with a blue light at ∼460 nm. A large mode volume can be created within the QD layer by the hybridization of the grating resonances and waveguide modes, resulting in large absorption and emission enhancements. Particularly, we achieved polarized light emission with a maximum photoluminescence enhancement of ∼140 times at a specific angular direction and a total enhancement of ∼34 times within a 0.55 numerical aperture (NA) of the collecting objective. The enhancement encompasses absorption, Purcell and outcoupling enhancements. We achieved a total absorption of 35% for green QDs with a remarkably thin color conversion layer of ∼400 nm. This work provides a guideline for designing large-volume cavities for absorption/fluorescence enhancement in microLED display, detector, or photovoltaic applications.
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Affiliation(s)
- Son Tung Ha
- Institute of Materials Research and Engineering (IMRE), Agency for Science Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Emmanuel Lassalle
- Institute of Materials Research and Engineering (IMRE), Agency for Science Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Xiao Liang
- LUMINOUS! Center of Excellence for Semiconductor Lighting and Displays, The Photonics Institute, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Thi Thu Ha Do
- Institute of Materials Research and Engineering (IMRE), Agency for Science Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Ian Foo
- Institute of Materials Research and Engineering (IMRE), Agency for Science Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Sushant Shendre
- LUMINOUS! Center of Excellence for Semiconductor Lighting and Displays, The Photonics Institute, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Emek G Durmusoglu
- LUMINOUS! Center of Excellence for Semiconductor Lighting and Displays, The Photonics Institute, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Vytautas Valuckas
- Institute of Materials Research and Engineering (IMRE), Agency for Science Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Sourav Adhikary
- Institute of Materials Research and Engineering (IMRE), Agency for Science Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Ramon Paniagua-Dominguez
- Institute of Materials Research and Engineering (IMRE), Agency for Science Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Hilmi Volkan Demir
- LUMINOUS! Center of Excellence for Semiconductor Lighting and Displays, The Photonics Institute, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
- UNAM─Institute of Materials Science and Nanotechnology, The National Nanotechnology Research Center, Department of Electrical and Electronics Engineering, Department of Physics, Bilkent University, Bilkent, Ankara 06800, Turkey
| | - Arseniy I Kuznetsov
- Institute of Materials Research and Engineering (IMRE), Agency for Science Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
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Hu S, Huan X, Yang J, Cui H, Gao W, Liu Y, Yu SF, Shum HC, Kim JT. Three-Dimensionally Printed, Vertical Full-Color Display Pixels for Multiplexed Anticounterfeiting. NANO LETTERS 2023; 23:9953-9962. [PMID: 37871156 DOI: 10.1021/acs.nanolett.3c02916] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/25/2023]
Abstract
Information encryption strategies have become increasingly essential. Most of the fluorescent security patterns have been made with a lateral configuration of red, green, and blue subpixels, limiting the pixel density and security level. Here we report vertically stacked, luminescent heterojunction micropixels that construct high-resolution, multiplexed anticounterfeiting labels. This is enabled by meniscus-guided three-dimensional (3D) microprinting of red, green, and blue (RGB) dye-doped materials. High-precision vertical stacking of subpixel segments achieves full-color pixels without sacrificing lateral resolution, achieving a small pixel size of ∼μm and a high density of over 13,000 pixels per inch. Furthermore, a full-scale color synthesis for individual pixels is developed by modulating the lengths of the RGB subpixels. Taking advantage of these unique 3D structural designs, trichannel multiplexed anticounterfeiting Quick Response codes are successfully demonstrated. We expect that this work will advance data encryption technology while also providing a versatile manufacturing platform for diverse 3D display devices.
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Affiliation(s)
- Shiqi Hu
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong 999077, China
| | - Xiao Huan
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong 999077, China
| | - Jihyuk Yang
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong 999077, China
| | - Huanqing Cui
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong 999077, China
| | - Wei Gao
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong 999077, China
| | - Yu Liu
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong 999077, China
| | - Siu Fung Yu
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong 999077, China
| | - Ho Cheung Shum
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong 999077, China
| | - Ji Tae Kim
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong 999077, China
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Park SY, Lee S, Yang J, Kang MS. Patterning Quantum Dots via Photolithography: A Review. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2300546. [PMID: 36892995 DOI: 10.1002/adma.202300546] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/17/2023] [Revised: 02/28/2023] [Indexed: 06/18/2023]
Abstract
Pixelating patterns of red, green, and blue quantum dots (QDs) is a critical challenge for realizing high-end displays with bright and vivid images for virtual, augmented, and mixed reality. Since QDs must be processed from a solution, their patterning process is completely different from the conventional techniques used in the organic light-emitting diode and liquid crystal display industries. Although innovative QD patterning technologies are being developed, photopatterning based on the light-induced chemical conversion of QD films is considered one of the most promising methods for forming micrometer-scale QD patterns that satisfy the precision and fidelity required for commercialization. Moreover, the practical impact will be significant as it directly exploits mature photolithography technologies and facilities that are widely available in the semiconductor industry. This article reviews recent progress in the effort to form QD patterns via photolithography. The review begins with a general description of the photolithography process. Subsequently, different types of photolithographical methods applicable to QD patterning are introduced, followed by recent achievements using these methods in forming high-resolution QD patterns. The paper also discusses prospects for future research directions.
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Affiliation(s)
- Se Young Park
- Department of Chemical and Biomolecular Engineering, Sogang University, Seoul, 04107, South Korea
| | - Seongjae Lee
- School of Chemical and Biological Engineering, Seoul National University, Seoul, 08826, South Korea
| | - Jeehye Yang
- Department of Chemical and Biomolecular Engineering, Sogang University, Seoul, 04107, South Korea
| | - Moon Sung Kang
- Department of Chemical and Biomolecular Engineering, Sogang University, Seoul, 04107, South Korea
- Institute of Emergent Materials, Sogang University, Seoul, 04107, South Korea
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Yang L, Huang J, Tan Y, Lu W, Li Z, Pan A. All-inorganic lead halide perovskite nanocrystals applied in advanced display devices. MATERIALS HORIZONS 2023; 10:1969-1989. [PMID: 37039776 DOI: 10.1039/d3mh00062a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Advanced display devices are in greater demand due to their large color gamut, high color purity, ultrahigh visual resolution, and small size pixels. All-inorganic lead halide perovskite (AILHP) nanocrystals (NCs) possess inherent advantages such as narrow emission width, saturated color, and flexible integration, and have been developed as functional films, light sources, backlight components, and display panels. However, some drawbacks still restrict the practical application of advanced display devices based on AILHP NCs, including working stability, large-scale synthesis, and cost. In this review, we focus on AILHP NCs, review the recent progress in materials synthesis, stability improvement, patterning techniques, and device application. We also highlight the important role of materials systems in creating advanced display devices, followed by the challenges and opportunities in industrial processes. This review provides beneficial inspiration for the future development of AILHP NCs in colorful and white backlight, as well as high resolution full-color displays.
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Affiliation(s)
- Liuli Yang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, P. R. China.
| | - Jianhua Huang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, P. R. China.
| | - Yike Tan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, P. R. China.
| | - Wei Lu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, P. R. China.
| | - Ziwei Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, P. R. China.
- Wuhan National Laboratory for Optoelectronics and School of Physics, Huazhong University of Science and Technology, Wuhan, China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, P. R. China.
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