Pyro-Phototronic Effect Enhanced Pyramid Structured p-Si/n-ZnO Nanowires Heterojunction Photodetector

Recent Progress in Pyro-Phototronic Effect-Based Photodetectors: A Path Toward Next-Generation Optoelectronics

Since photodetectors are widely used in a variety of applications, such as imaging, optical communication, security and safety, motion detection, environmental sensing, and more, they are a crucial part of many technologies. The performance of photodetectors has significantly improved due to the advanced development of third-generation semiconducting materials caused by the novel pyro-phototronic effect. This effect; induced by localized heating under pulsed incident light, enhances the generation, separation, and collection of charge carriers within photodetectors. The combined pyroelectric and photoelectric effects resulting from this process are collectively termed the pyro-phototronic effect. It is crucial to understand how the pyro-phototronic effect affects the optoelectronic processes that take place during photodetection. This review addresses the latest advancements in photodetector performance by presenting the pyro-phototronic effect for a range of semiconductors. We provide a comprehensive summary of the pyro-phototronic effect in different semiconducting materials and outline recent developments in photodetectors.

p-CuO/n-ZnO Heterojunction Pyro-Phototronic Photodetector Controlled by CuO Preparation Parameters

The combination of ZnO with narrow bandgap materials such as CuO is now a common method to synthesize high-performance optoelectronic devices. This study focuses on optimizing the performance of p-CuO/n-ZnO heterojunction pyroelectric photodetectors, fabricated through magnetron sputtering, by leveraging the pyro-phototronic effect. The devices' photoresponse to UV (365 nm) and visible (405 nm) lasers is thoroughly examined. The results show that when the device performance is regulated by adjusting the three parameters-sputtering power, sputtering time, and sputtering oxygen-argon ratio-the optimal sputtering parameters should be as follows: sputtering power of 120 W, sputtering time of 15 min, and sputtering oxygen-argon ratio of 1:3. With the optimal sputtering parameters, the maximum responsivity of the pyroelectric effect and the traditional photovoltaic effect Rpyro+photo of the detector is 4.7 times that under the basic parameters, and the maximum responsivity of the traditional photovoltaic effect Rphoto is also 5.9 times that under the basic parameters. This study not only showcases the extensive potential of the pyro-phototronic effect in enhancing heterojunction photodetectors for high-performance photodetection but also provides some ideas for fabricating high-performance photodetectors.

Self-Powered p-NiO/n-ZnO Heterojunction Ultraviolet Photodetector Based on Honeycomb Nano-Mesh Structure

Ultraviolet (UV) photodetectors (PDs) are characterized by wide wavelength selectivity and strong anti-interference capability. The focus of research is not only limited to the adjustment of the structure composition, but it also delves deeper into its working mechanism and performance optimization. In this study, a heterojunction self-powered photodetector with a unique honeycomb structure was successfully constructed by combining the advantages of two semiconductor materials, zinc oxide (ZnO) and nickel oxide (NiO), using magnetron sputtering and hydrothermal synthesis. The detector has high responsivity, high detectivity and favorable spectral selectivity under UV irradiation. The nearly 10-fold increase in responsivity and detectivity of the detector with the introduction of the honeycomb structure under zero-bias conditions is attributed to the macroporous structure of the ZnO honeycomb nano-mesh, which increases the surface active sites and facilitates the enhancement of light trapping. This study provides significant value to the field of UV detection by improving detector performance through structural optimization.

Unveiling Superior Solar-Blind Photodetection with a NiO/ZnGa2O4 Heterojunction Diode

This investigation presents a self-powered, solar-blind photodetector utilizing a low-temperature fabricated crystalline NiO/ZnGa2O4 heterojunction with a staggered type-II band alignment. The device leverages the pyrophototronic effect (PPE), combining the photoelectric effect in the p-n junction and the pyroelectric effect in the non-centrosymmetric ZnGa2O4 crystal. This synergistic effect enhances the photodetector's performance parameters, thereby outperforming traditional solar-blind photodetectors. The device demonstrates an extremely low dark current of 5.39 fA, a high responsivity of 88 mA/W, and a very high specific detectivity of 2.03 × 1014 Jones under 246 nm light irradiation at 0 V bias. Significantly, due to the PPE, the impact demonstrates a much-enhanced transient response when tested under various light intensities, ranging from 18 to 122 μW/cm2. The photodetector shows a high responsivity of 338 A/W and an outstanding detectivity of 7.1 × 1018 Jones with an applied voltage of -13 V, showing its ability to detect weak signals. Single-crystalline ZnGa2O4 fabricated by MOCVD exhibits significant absorption of deep UV light, and the heterojunction's type-II band alignment with NiO is responsible for its exceptional self-powered pyrophotoelectric detecting and rectifying capabilities.

Piezophototronic Effect Enhanced Flexible Tunneling Devices by Separating the Photosensitive Layer and the Piezoelectric Modulation Layer

The piezo-phototronic effect uses the piezoelectric potential/piezoelectric charge generated by the piezoelectric semiconductor material to regulate the energy band structure and photogenerated carrier behavior at the interface/junction, thereby modulating the device's performance. The positive/negative piezoelectric charges generated at the interface of piezoelectric semiconductors can reduce the electron/hole barriers and thus enhance the transport of photogenerated carriers. However, electron/hole potential wells are formed when the electron/hole potential barrier caused by positive/negative piezoelectric charges is lowered too much, hindering the transport of photogenerated carriers. It is difficult to balance the relationship between potential barriers and potential wells while introducing the piezo-phototronic effect. In this work, a physical mechanism by separating the photosensitive layer and the piezoelectric modulation layer is proposed to deal with the above-mentioned issue in flexible tunneling devices. The piezoelectric modulation layer is solely used to adjust the electron/hole barriers, while the photosensitive layer is used to absorb photons and generate photogenerated carriers. This avoids the limitation on the transport of photogenerated carriers caused by potential wells in the piezoelectric semiconductor, thereby significantly increasing the adjustable range of the barriers. Experimental results show that the photoresponsivity of the flexible p-Si/Al2O3/n-ZnO tunneling device is optimized from 5.5 A/W to 35.8 A/W by the piezo-phototronic effect after separating the piezoelectric charges and photogenerated carriers. In addition, finite element analysis is used to simulate the influence of piezoelectric charges on the energy bands to corroborate the accuracy of the theoretical mechanism and experimental results. This work not only presents an optoelectronic device with excellent performance but also offers novel guidance for improving the performance of optoelectronic devices using the piezo-phototronic effect.

Investigations on Optical Absorption and the Pyro-phototronic Effect with Selectively Patterned Black Silicon for Advanced Photodetection

A novel property existing in the stain-etching technique that eliminates the need for expensive etchant masks in the texturization process of silicon wafers was identified. Through the combination of grayscale lithography and stain-etching methodologies, selective patterning of silicon with AR-P 3510 T, a positive-photoresist mask, was carried out. The etch area ratio was varied in nine different patterns of various feature sizes ranging from 400 to 1500 μm. The optical characteristics of the patterned substrates were determined from diffuse reflectance spectroscopy analysis, and the results were supported with finite-difference time-domain simulations. Complimenting the improvement in optical properties, the electrical losses in microwell-patterned photodetector devices have been reduced with an electro-optic optimum value of the surface enhancement factor, γ. The photodetecting efficiency of a selectively patterned microwell photodetector device exceeded the planar and black silicon photodetector devices with a considerable improvement in the pyro-phototronic effect. This work suggests an alternative for black silicon optoelectronic devices providing a new route to fabricate selectively patterned substrates with an achieved detectivity 16- and 20-fold higher than black and planar silicon photodetector devices, respectively.

Coupling of Pyro-Piezo-Phototronic Effects in a GaN Nanowire

In this paper, we systematically investigate the synergistic regulation of ultraviolet and mechanical loading on the electromechanical behavior of a GaN nanowire. The distributions of polarization charge, potential, carriers, and electric field in the GaN nanowire are analytically represented by using a one-dimensional model that combines pyro-phototronic and piezo-phototronic properties, and then, the electrical transmission characteristics are analyzed. The results suggest that, due to the pyro-phototronic effect and ultraviolet photoexcited non-equilibrium carriers, the electrical behavior of a nano-Schottky junction can be modulate by ultraviolet light. This provides a new method for the function improvement and performance regulation of intelligent optoelectronic nano-Schottky devices.

Pyro-Phototronic Effect for Advanced Photodetectors and Novel Light Energy Harvesting

Pyroelectricity was discovered long ago and utilized to convert thermal energy that is tiny and usually wasted in daily life into useful electrical energy. The combination of pyroelectricity and optoelectronic yields a novel research field named as Pyro-Phototronic, where light-induced temperature variation of the pyroelectric material produces pyroelectric polarization charges at the interfaces of semiconductor optoelectronic devices, capable of modulating the device performances. In recent years, the pyro-phototronic effect has been vastly adopted and presents huge potential applications in functional optoelectronic devices. Here, we first introduce the basic concept and working mechanism of the pyro-phototronic effect and next summarize the recent progress of the pyro-phototronic effect in advanced photodetectors and light energy harvesting based on diverse materials with different dimensions. The coupling between the pyro-phototronic effect and the piezo-phototronic effect has also been reviewed. This review provides a comprehensive and conceptual summary of the pyro-phototronic effect and perspectives for pyro-phototronic-effect-based potential applications.