Magnetodynamic properties of ultrathin films of Fe[Formula: see text]Sn[Formula: see text]-a topological kagome ferromagnet

Fe[Formula: see text]Sn[Formula: see text] is a topological kagome ferromagnet that possesses numerous Weyl points close to the Fermi energy, which can manifest various unique transport phenomena such as chiral anomaly, anomalous Hall effect, and giant magnetoresistance. However, the magnetodynamic properties of Fe[Formula: see text]Sn[Formula: see text] have not yet been explored. Here, we report, for the first time, the measurements of the intrinsic Gilbert damping constant ([Formula: see text]), and the effective spin mixing conductance (g[Formula: see text]) of Pt/Fe[Formula: see text]Sn[Formula: see text] bilayers for Fe[Formula: see text]Sn[Formula: see text] thicknesses down to 2 nm, for which [Formula: see text] is [Formula: see text], and g[Formula: see text] is [Formula: see text]. The films have a high saturation magnetization, [Formula: see text], and large anomalous Hall coefficient, [Formula: see text]. The large values of g[Formula: see text], together with the topological properties of Fe[Formula: see text]Sn[Formula: see text], make Fe[Formula: see text]Sn[Formula: see text]/Pt bilayers useful heterostructures for the study of topological spintronic devices.

Magnetic-Proximity-Induced Efficient Charge-to-Spin Conversion in Large-Area PtSe2/Ni80Fe20 Heterostructures

As a topological Dirac semimetal with controllable spin-orbit coupling and conductivity, PtSe2, a transition-metal dichalcogenide, is a promising material for several applications, from optoelectrics to sensors. However, its potential for spintronics applications has yet to be explored. In this work, we demonstrate that the PtSe2/Ni80Fe20 heterostructure can generate large damping-like current-induced spin-orbit torques (SOT), despite the absence of spin-splitting in bulk PtSe2. The efficiency of charge-to-spin conversion is found to be -0.1 ± 0.02 nm-1 in PtSe2/Ni80Fe20, which is 3 times that of the control sample, Ni80Fe20/Pt. Our band structure calculations show that the SOT due to PtSe2 arises from an unexpectedly large spin splitting in the interfacial region of PtSe2 introduced by the proximity magnetic field of the Ni80Fe20 layer. Our results open up the possibilities of using large-area PtSe2 for energy-efficient nanoscale devices by utilizing proximity-induced SOT.

Large-Area GeSe Realized Using Pulsed Laser Deposition for Ultralow-Noise and Ultrafast Broadband Phototransistors

Here, we report on the comprehensive growth, characterization, and optoelectronic application of large-area, two-dimensional germanium selenide (GeSe) layers prepared using the pulsed laser deposition (PLD) technique. Back-gated phototransistors based on few-layered 2D GeSe have been fabricated on a SiO₂/Si substrate for ultrafast, low noise, and broadband light detection, showing spectral functionalities over a broad wavelength range of 0.4-1.5 μm. The broadband detection capabilities of the device have been attributed to the self-assembled GeO_x/GeSe heterostructure and sub-bandgap absorption in GeSe. Besides a high photoresponsivity of 25 AW^-1, the GeSe phototransistor displayed a high external quantum efficiency of the order of 6.14 × 10³%, a maximum specific detectivity of 4.16 × 10¹⁰ Jones, and an ultralow noise equivalent power of 0.09 pW/Hz^1/2. The detector has an ultrafast response/recovery time of 3.2/14.9 μs and can show photoresponse up to a high cut-off frequency of 150 kHz. These promising device parameters exhibited by PLD-grown GeSe layers-based detectors make it a favorable choice against present-day mainstream van der Waals semiconductors with limited scalability and optoelectronic compatibility in the visible-to-infrared spectral range.

Large Spin-To-Charge Conversion at the Two-Dimensional Interface of Transition-Metal Dichalcogenides and Permalloy

Spin-to-charge conversion is an essential requirement for the implementation of spintronic devices. Recently, monolayers (MLs) of semiconducting transition-metal dichalcogenides (TMDs) have attracted considerable interest for spin-to-charge conversion due to their high spin-orbit coupling and lack of inversion symmetry in their crystal structure. However, reports of direct measurement of spin-to-charge conversion at TMD-based interfaces are very much limited. Here, we report on the room-temperature observation of a large spin-to-charge conversion arising from the interface of Ni₈₀Fe₂₀ (Py) and four distinct large-area (∼5 × 2 mm²) ML TMDs, namely, MoS₂, MoSe₂, WS₂, and WSe₂. We show that both spin mixing conductance and the Rashba efficiency parameter (λ_IREE) scale with the spin-orbit coupling strength of the ML TMD layers. The λ_IREE parameter is found to range between -0.54 and -0.76 nm for the four ML TMDs, demonstrating a large spin-to-charge conversion. Our findings reveal that the TMD/ferromagnet interface can be used for efficient generation and detection of spin current, opening new opportunities for novel spintronic devices.

Spin Pumping through Different Spin-Orbit Coupling Interfaces in β-W/Interlayer/Co2FeAl Heterostructures

Spin pumping has been considered a powerful tool to manipulate the spin current in a ferromagnetic/nonmagnetic (FM/NM) system, where the NM part exhibits large spin-orbit coupling (SOC). In this work, the spin pumping in β-W/Interlayer (IL)/Co₂FeAl (CFA) heterostructures grown on Si(100) is systematically investigated with different ILs in which SOC strength ranges from weak to strong. We first measure the spin pumping through the enhancement of effective damping in CFA by varying the thickness of β-W. The damping enhancement in the bilayer of β-W/CFA (without IL) is found to be ∼50% larger than the Gilbert damping in a single CFA layer with a spin diffusion length and spin mixing conductance of 2.12 ± 0.27 nm and 13.17 ± 0.34 nm^-2, respectively. Further, the ILs of different SOC strengths such as Al, Mg, Mo, and Ta were inserted at the β-W/CFA interface to probe their impact on damping in β-W/ILs/CFA. The effective damping reduced to 8% and 20% for Al and Mg, respectively, whereas it increased to 66% and 75% with ILs of Mo and Ta, respectively, compared to the β-W/CFA heterostructure. Thus, in the presence of ILs with weak SOC, the spin pumping at the β-W/CFA interface is suppressed, while for the high SOC ILs effective damping increased significantly from its original value of β-W/CFA bilayer using a thin IL. This is further confirmed by performing inverse spin Hall effect measurements. In summary, the transfer of spin angular momentum can be significantly enhanced by choosing a proper ultrathin interface layer. Our study provides a tool to increase the spin current production by inserting an appropriate thin interlayer which is useful in modifying the heterostructure for efficient performance in spintronics devices.

Intrinsic anomalous Hall effect in thin films of topological kagome ferromagnet Fe3Sn2

Fe₃Sn₂, a kagome ferromagnet, is a potential quantum material with intriguing topological features. Despite substantial experimental work on the bulk single crystals, the thin film growth of Fe₃Sn₂ remains relatively unexplored. Here, we investigate the effect of two different seed layers (Ta and Pt) on the growth of Fe₃Sn₂ thin films. We demonstrate the growth of polycrystalline Fe₃Sn₂ thin films on Si/SiO₂ substrates by room temperature sputter deposition, followed by in situ annealing at 500 °C. Our structural and magnetic measurements indicate that a pure ferromagnetic phase is formed for the Pt/Fe₃Sn₂ thin films with higher saturation magnetization of M_s = 464 emu cc^-1, while a mixed-phase (consisting of ferromagnetic, Fe₃Sn₂ and antiferromagnetic, FeSn) is formed for the Ta/Fe₃Sn₂ thin films with a lower M_s of 240 emu cc^-1. The Pt/Fe₃Sn₂ thin films also exhibit an anomalous Hall coefficient, R_s ≈ 2.6 × 10^-10 Ω cm^-1 G^-1 at room temperature, which is two order of magnitude higher compared to 3d-transition metal ferromagnets. A non-zero temperature-independent anomalous Hall conductivity σintxy = (23 ± 11) Ω^-1 cm^-1 indicates an intrinsic mechanism of anomalous Hall effect originating from Berry curvature. These results are important for realizing novel topological spintronic devices on a CMOS-compatible substrate.

A high-speed single sideband generator using a magnetic tunnel junction spin torque nano-oscillator

An important property of spin-torque nano-oscillators (STNOs) is their ability to produce a frequency modulated (FM) signal, which is very critical for communication applications. We here demonstrate a novel single sideband (SSB) modulation phenomenon using a magnetic tunnel junction (MTJ)-based STNO, which saves transmission bandwidth and in principle should minimize attenuation for wireless communication. Experimentally, lower single sidebands (LSSBs) have been successfully demonstrated over a wide range of modulation frequency, f m  = 150 MHz-1 GHz. The observed LSSBs are determined by the intrinsic properties of the device, which can be modeled well by a nonlinear frequency and amplitude modulation formulation and reproduced in macrospin simulations. Moreover, our macrospin simulation results show that the range of modulation current and modulation frequency for generating SSBs can be controlled by the field-like torque and biasing conditions.

Large local Hall effect in pin-hole dominated multigraphene spin-valves

We report local and non-local measurements in pin-hole dominated mesoscopic multigraphene spin-valves. Local spin-valve measurements show spurious switching behavior in resistance during magnetic field sweeping similar to the signal observed due to spin injection into multigraphene. The switching behavior has been explained in terms of a local Hall effect due to a thickness irregularity of the tunnel barrier. The local Hall effect appears due to a large local magnetostatic field produced near the roughness in the AlO(x) tunnel barrier. In our samples the resistance change due to the local Hall effect remains negligibly small above 75 K. A strong local Hall effect might hinder spin injection into multigraphene, resulting in no spin signal in non-local measurements.

Decoherence and mode hopping in a magnetic tunnel junction based spin torque oscillator

We discuss the coherence of magnetic oscillations in a magnetic tunnel junction based spin torque oscillator as a function of the external field angle. Time-frequency analysis shows mode hopping between distinct oscillator modes, which arises from linear and nonlinear couplings in the Landau-Lifshitz-Gilbert equation, analogous to mode hopping observed in semiconductor ring lasers. These couplings and, therefore, mode hopping are minimized near the current threshold for the antiparallel alignment of free-layer with reference layer magnetization. Away from the antiparallel alignment, mode hopping limits oscillator coherence.

Study of magnetic anisotropy and magnetization reversal using the quadratic magnetooptical effect in epitaxial Co(x)Mn(y)Ge(z)(111) films

Magnetic anisotropy, magnetization reversal and the magnetooptic Kerr effect in Co(x)Mn(y)Ge(z) have been studied over a range of compositions between 0 and 50 at.% of Ge and between 1 and 3 in the Co to Mn atomic ratio, including the Heusler alloy Co(2)MnGe. A strong quadratic magnetooptic Kerr effect has been observed within a narrow region of composition centered around the Co to Mn atomic ratio of 2, which has been used to probe and quantify the magnetic anisotropy and magnetization reversal of the system. The anisotropy is sixfold with a weak uniaxial component, and it exhibits sensitive dependence on composition, especially on the atomic ratio between Co and Mn. The magnetization reversal process is consistent with the single-domain Stoner-Wohlfarth model.