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Zhang Q, Shi S, Zheng Z, Zhou H, Shao DF, Zhao T, Su H, Liu L, Shu X, Jia L, Gu Y, Xiao R, Wang G, Zhao C, Li H, Chen J. Highly Energy-Efficient Spin Current Generation in SrIrO 3 by Manipulating the Octahedral Rotation. ACS Appl Mater Interfaces 2024; 16:1129-1136. [PMID: 38118124 DOI: 10.1021/acsami.3c15514] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/22/2023]
Abstract
Materials with strong spin-orbit coupling (SOC) have been continuously attracting intensive attention due to their promising application in energy-efficient, high-density, and nonvolatile spintronic devices. Particularly, transition-metal perovskite oxides with strong SOC have been demonstrated to exhibit efficient charge-spin interconversion. In this study, we systematically investigated the impact of epitaxial strain on the spin-orbit torque (SOT) efficiency in the SrIrO3(SIO)/Ni81Fe19(Py) bilayer. The results reveal that the SOT efficiency is strongly related to the octahedral rotation around the in-plane axes of the single-crystal SIO. By modulating the epitaxial strain using different substrates, the SOT efficiency can be remarkably improved from 0.15 to 1.45. This 10-fold enhancement of SOT efficiency suggests that modulating the epitaxial strain is an efficient approach to control the SOT efficiency in complex oxide-based heterostructures. Our work may have the potential to advance the application of complex oxides in energy-efficient spintronic devices.
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Affiliation(s)
- Qihan Zhang
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
| | - Shu Shi
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
| | - Zhenyi Zheng
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
| | - Hengan Zhou
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
| | - Ding-Fu Shao
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
| | - Tieyang Zhao
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
| | - Hanxin Su
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
| | - Liang Liu
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Xinyu Shu
- State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China
| | - Lanxin Jia
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
| | - Youdi Gu
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
| | - Rui Xiao
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
| | - Guilei Wang
- Beijing Superstring Academy of Memory Technology, Beijing 100176, China
| | - Chao Zhao
- Beijing Superstring Academy of Memory Technology, Beijing 100176, China
| | - Huihui Li
- Beijing Superstring Academy of Memory Technology, Beijing 100176, China
| | - Jingsheng Chen
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
- Chongqing Research Institute, National University of Singapore, Chongqing 401120, China
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Mudgal R, Jakhar A, Gupta P, Yadav RS, Biswal B, Sahu P, Bangar H, Kumar A, Chowdhury N, Satpati B, Kumar Nanda BR, Satpathy S, Das S, Muduli PK. Magnetic-Proximity-Induced Efficient Charge-to-Spin Conversion in Large-Area PtSe 2/Ni 80Fe 20 Heterostructures. Nano Lett 2023; 23:11925-11931. [PMID: 38088819 DOI: 10.1021/acs.nanolett.3c04060] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/28/2023]
Abstract
As a topological Dirac semimetal with controllable spin-orbit coupling and conductivity, PtSe2, a transition-metal dichalcogenide, is a promising material for several applications, from optoelectrics to sensors. However, its potential for spintronics applications has yet to be explored. In this work, we demonstrate that the PtSe2/Ni80Fe20 heterostructure can generate large damping-like current-induced spin-orbit torques (SOT), despite the absence of spin-splitting in bulk PtSe2. The efficiency of charge-to-spin conversion is found to be -0.1 ± 0.02 nm-1 in PtSe2/Ni80Fe20, which is 3 times that of the control sample, Ni80Fe20/Pt. Our band structure calculations show that the SOT due to PtSe2 arises from an unexpectedly large spin splitting in the interfacial region of PtSe2 introduced by the proximity magnetic field of the Ni80Fe20 layer. Our results open up the possibilities of using large-area PtSe2 for energy-efficient nanoscale devices by utilizing proximity-induced SOT.
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Affiliation(s)
- Richa Mudgal
- Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India
| | - Alka Jakhar
- Center for Applied Research in Electronics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India
| | - Pankhuri Gupta
- Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India
| | - Ram Singh Yadav
- Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India
| | - Bubunu Biswal
- Condensed Matter Theory and Computational Lab, Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India
- Center for Atomistic Modelling and Materials Design, Indian Institute of Technology Madras, Chennai 600036, India
| | - Pratik Sahu
- Condensed Matter Theory and Computational Lab, Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India
- Department of Physics & Astronomy, University of Missouri, Columbia, Missouri 65211, United States
| | - Himanshu Bangar
- Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India
| | - Akash Kumar
- Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India
- Department of Physics, University of Gothenburg, Gothenburg 412 96, Sweden
| | - Niru Chowdhury
- Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India
| | - Biswarup Satpati
- Surface Physics & Material Science Division, Saha Institute of Nuclear Physics, A CI of Homi Bhabha National Institute, 1/AF Bidhannagar, Kolkata 700064, India
| | - Birabar Ranjit Kumar Nanda
- Condensed Matter Theory and Computational Lab, Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India
- Center for Atomistic Modelling and Materials Design, Indian Institute of Technology Madras, Chennai 600036, India
| | - Sashi Satpathy
- Condensed Matter Theory and Computational Lab, Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India
- Center for Atomistic Modelling and Materials Design, Indian Institute of Technology Madras, Chennai 600036, India
- Department of Physics & Astronomy, University of Missouri, Columbia, Missouri 65211, United States
| | - Samaresh Das
- Center for Applied Research in Electronics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India
| | - Pranaba Kishor Muduli
- Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India
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Hwee Wong GD, Xu Z, Gan W, Ang CCI, Law WC, Tang J, Zhang W, Wong PKJ, Yu X, Xu F, Wee ATS, Seet CS, Lew WS. Strain-Mediated Spin-Orbit Torque Enhancement in Pt/Co on Flexible Substrate. ACS Nano 2021; 15:8319-8327. [PMID: 33970603 DOI: 10.1021/acsnano.0c09404] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Current-induced magnetization switching by spin-orbit torque generated in heavy metals offers an enticing realm for energy-efficient memory and logic devices. The spin Hall efficiency is a key parameter in describing the generation of spin current. Recent findings have reported enhancement of spin Hall efficiency by mechanical strain, but its origin remains elusive. Here, we demonstrate a 45% increase in spin Hall efficiency in the platinum/cobalt (Pt/Co) bilayer, of which 78% of the enhancement was preserved even after the strain was removed. Spin transparency and X-ray magnetic circular dichroism revealed that the enhancement was attributed to a bulk effect in the Pt layer. This was further confirmed by the linear relationship between the spin Hall efficiency and resistivity, which indicates an increase in skew-scattering. These findings shed light on the origin of enhancement and are promising in shaping future utilization of mechanical strain for energy-efficient devices.
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Affiliation(s)
- Grayson Dao Hwee Wong
- School of Physical & Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371
- GLOBALFOUNDRIES Singapore Pte. Ltd., 60 Woodlands Industrial Park D Street 2, Singapore 738406
| | - Zhan Xu
- School of Physical & Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371
- MIIT Key Laboratory of Advanced Metallic and Intermetallic Materials Technology, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Weiliang Gan
- School of Physical & Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371
| | - Calvin Ching Ian Ang
- School of Physical & Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371
| | - Wai Cheung Law
- School of Physical & Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371
- GLOBALFOUNDRIES Singapore Pte. Ltd., 60 Woodlands Industrial Park D Street 2, Singapore 738406
| | - Jiaxuan Tang
- MIIT Key Laboratory of Advanced Metallic and Intermetallic Materials Technology, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Wen Zhang
- School of Microelectronics, Northwestern Polytechnical University, Xi'an 710072, China
| | - Ping Kwan Johnny Wong
- School of Microelectronics, Northwestern Polytechnical University, Xi'an 710072, China
| | - Xiaojiang Yu
- Singapore Synchrotron Light Source, National University of Singapore, 5 Research Link, Singapore 117603
| | - Feng Xu
- MIIT Key Laboratory of Advanced Metallic and Intermetallic Materials Technology, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Andrew T S Wee
- Department of Physics and Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, Singapore 117546
| | - Chim Seng Seet
- GLOBALFOUNDRIES Singapore Pte. Ltd., 60 Woodlands Industrial Park D Street 2, Singapore 738406
| | - Wen Siang Lew
- School of Physical & Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371
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Bonell F, Goto M, Sauthier G, Sierra JF, Figueroa AI, Costache MV, Miwa S, Suzuki Y, Valenzuela SO. Control of Spin-Orbit Torques by Interface Engineering in Topological Insulator Heterostructures. Nano Lett 2020; 20:5893-5899. [PMID: 32584582 DOI: 10.1021/acs.nanolett.0c01850] [Citation(s) in RCA: 12] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
(Bi1-xSbx)2Te3 topological insulators (TIs) are gathering increasing attention owing to their large charge-to-spin conversion efficiency and the ensuing spin-orbit torques (SOTs) that can be used to manipulate the magnetization of a ferromagnet (FM). The origin of the torques, however, remains elusive, while the implications of hybridized states and the strong material intermixing at the TI/FM interface are essentially unexplored. By combining interface chemical analysis and spin-transfer ferromagnetic resonance (ST-FMR) measurements, we demonstrate that intermixing plays a critical role in the generation of SOTs. By inserting a suitable normal metal spacer, material intermixing is reduced and the TI properties at the interface are largely improved, resulting in strong variations in the nature of the SOTs. A dramatic enhancement of a field-like torque, opposing and surpassing the Oersted-field torque, is observed, which can be attributed to the non-equilibrium spin density in Rashba-split surface bands and to the suppression of spin memory loss. These phenomena can play a relevant role at other interfaces, such as those comprising transition metal dichalcogenides.
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Affiliation(s)
- Frédéric Bonell
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC, and The Barcelona Institute of Science and Technology (BIST), Campus UAB, Bellaterra, 08193 Barcelona, Spain
| | - Minori Goto
- Graduate School of Engineering Science and Center for Spintronics Research Network (CSRN), Osaka University, Toyonaka, Osaka 560-8531, Japan
| | - Guillaume Sauthier
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC, and The Barcelona Institute of Science and Technology (BIST), Campus UAB, Bellaterra, 08193 Barcelona, Spain
| | - Juan F Sierra
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC, and The Barcelona Institute of Science and Technology (BIST), Campus UAB, Bellaterra, 08193 Barcelona, Spain
| | - Adriana I Figueroa
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC, and The Barcelona Institute of Science and Technology (BIST), Campus UAB, Bellaterra, 08193 Barcelona, Spain
| | - Marius V Costache
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC, and The Barcelona Institute of Science and Technology (BIST), Campus UAB, Bellaterra, 08193 Barcelona, Spain
| | - Shinji Miwa
- Graduate School of Engineering Science and Center for Spintronics Research Network (CSRN), Osaka University, Toyonaka, Osaka 560-8531, Japan
| | - Yoshishige Suzuki
- Graduate School of Engineering Science and Center for Spintronics Research Network (CSRN), Osaka University, Toyonaka, Osaka 560-8531, Japan
| | - Sergio O Valenzuela
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC, and The Barcelona Institute of Science and Technology (BIST), Campus UAB, Bellaterra, 08193 Barcelona, Spain
- Institució Catalana de Recerca i Estudis Avançats (ICREA), 08070 Barcelona, Spain
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