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Singh AK, Gao W, Deb P. Large thermoelectric transport in magnetically coupled CrI 3/1T-MoS 2vdW heterostructure via spin-charge interconversion. J Phys Condens Matter 2024; 36:305704. [PMID: 38653260 DOI: 10.1088/1361-648x/ad4247] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/29/2024] [Accepted: 04/23/2024] [Indexed: 04/25/2024]
Abstract
Low-dimensional materials with prominent thermoelectric (TE) effect play a pivotal role in realizing state-of-the-art nanoscale TE devices. The fusion of TE effect with the magnetism through seamless integration of TE and magnetic materials in the 2D limit offers access to control longitudinal as well as transverse TE properties via magnetic proximity effect. Herein, we design a van der Waals (vdW) heterostructure of metallic 1T-MoS2with promising TE properties and a layer-dependent magnetic CrI3material. The result highlights exotic electronic and magnetic configurations of the designed monolayer-CrI3/1T-MoS2vdW heterostructure, which show magnetically-coupled TE characteristics. The observed remarkable magnetic proximity stems from large magnetic anisotropy energy and spin polarization, which are found to be 2.21 meV Cr-1and 12.30%, respectively. To this end, the semiconducting CrI3layer with intrinsic magnetism leads to efficient control and tunability of the observed spin-correlated anomalous Nernst effect. Moreover, a large dimensionless figure of merit of ∼6 and a power factor of∼3.8×1011/τ∘ Wm-1K-2s-1near the Fermi level at 300 K endorse the rejuvenated TE effect. The strong relativistic spin-orbit coupling validates the significant correlation of TE properties with intrinsic magnetic configuration. The present study underscores the significance of the magnetic proximity-governed TE effect in vdW heterostructures to engineer low-dimensional TE devices.
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Affiliation(s)
- Anil Kumar Singh
- Department of Physics, Tezpur University (Central University), Tezpur 784028, India
| | - Weibo Gao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 639798, Singapore
| | - Pritam Deb
- Department of Physics, Tezpur University (Central University), Tezpur 784028, India
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Mudgal R, Jakhar A, Gupta P, Yadav RS, Biswal B, Sahu P, Bangar H, Kumar A, Chowdhury N, Satpati B, Kumar Nanda BR, Satpathy S, Das S, Muduli PK. Magnetic-Proximity-Induced Efficient Charge-to-Spin Conversion in Large-Area PtSe 2/Ni 80Fe 20 Heterostructures. Nano Lett 2023; 23:11925-11931. [PMID: 38088819 DOI: 10.1021/acs.nanolett.3c04060] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/28/2023]
Abstract
As a topological Dirac semimetal with controllable spin-orbit coupling and conductivity, PtSe2, a transition-metal dichalcogenide, is a promising material for several applications, from optoelectrics to sensors. However, its potential for spintronics applications has yet to be explored. In this work, we demonstrate that the PtSe2/Ni80Fe20 heterostructure can generate large damping-like current-induced spin-orbit torques (SOT), despite the absence of spin-splitting in bulk PtSe2. The efficiency of charge-to-spin conversion is found to be -0.1 ± 0.02 nm-1 in PtSe2/Ni80Fe20, which is 3 times that of the control sample, Ni80Fe20/Pt. Our band structure calculations show that the SOT due to PtSe2 arises from an unexpectedly large spin splitting in the interfacial region of PtSe2 introduced by the proximity magnetic field of the Ni80Fe20 layer. Our results open up the possibilities of using large-area PtSe2 for energy-efficient nanoscale devices by utilizing proximity-induced SOT.
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Affiliation(s)
- Richa Mudgal
- Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India
| | - Alka Jakhar
- Center for Applied Research in Electronics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India
| | - Pankhuri Gupta
- Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India
| | - Ram Singh Yadav
- Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India
| | - Bubunu Biswal
- Condensed Matter Theory and Computational Lab, Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India
- Center for Atomistic Modelling and Materials Design, Indian Institute of Technology Madras, Chennai 600036, India
| | - Pratik Sahu
- Condensed Matter Theory and Computational Lab, Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India
- Department of Physics & Astronomy, University of Missouri, Columbia, Missouri 65211, United States
| | - Himanshu Bangar
- Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India
| | - Akash Kumar
- Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India
- Department of Physics, University of Gothenburg, Gothenburg 412 96, Sweden
| | - Niru Chowdhury
- Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India
| | - Biswarup Satpati
- Surface Physics & Material Science Division, Saha Institute of Nuclear Physics, A CI of Homi Bhabha National Institute, 1/AF Bidhannagar, Kolkata 700064, India
| | - Birabar Ranjit Kumar Nanda
- Condensed Matter Theory and Computational Lab, Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India
- Center for Atomistic Modelling and Materials Design, Indian Institute of Technology Madras, Chennai 600036, India
| | - Sashi Satpathy
- Condensed Matter Theory and Computational Lab, Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India
- Center for Atomistic Modelling and Materials Design, Indian Institute of Technology Madras, Chennai 600036, India
- Department of Physics & Astronomy, University of Missouri, Columbia, Missouri 65211, United States
| | - Samaresh Das
- Center for Applied Research in Electronics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India
| | - Pranaba Kishor Muduli
- Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India
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Li Q, Trang CX, Wu W, Hwang J, Cortie D, Medhekar N, Mo SK, Yang SA, Edmonds MT. Large Magnetic Gap in a Designer Ferromagnet-Topological Insulator-Ferromagnet Heterostructure. Adv Mater 2022; 34:e2107520. [PMID: 35261089 DOI: 10.1002/adma.202107520] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/20/2021] [Revised: 03/03/2022] [Indexed: 06/14/2023]
Abstract
Combining magnetism and nontrivial band topology gives rise to quantum anomalous Hall (QAH) insulators and exotic quantum phases such as the QAH effect where current flows without dissipation along quantized edge states. Inducing magnetic order in topological insulators via proximity to a magnetic material offers a promising pathway toward achieving the QAH effect at a high temperature for lossless transport applications. One promising architecture involves a sandwich structure comprising two single-septuple layers (1SL) of MnBi2 Te4 (a 2D ferromagnetic insulator) with ultrathin few quintuple layer (QL) Bi2 Te3 in the middle, and it is predicted to yield a robust QAH insulator phase with a large bandgap greater than 50 meV. Here, the growth of a 1SL MnBi2 Te4 /4QL Bi2 Te3 /1SL MnBi2 Te4 heterostructure via molecular beam epitaxy is demonstrated and the electronic structure probed using angle-resolved photoelectron spectroscopy. Strong hexagonally warped massive Dirac fermions and a bandgap of 75 ± 15 meV are observed. The magnetic origin of the gap is confirmed by the observation of the exchange-Rashba effect, as well as the vanishing bandgap above the Curie temperature, in agreement with density functional theory calculations. These findings provide insights into magnetic proximity effects in topological insulators and reveal a promising platform for realizing the QAH effect at elevated temperatures.
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Affiliation(s)
- Qile Li
- School of Physics and Astronomy, Monash University, Clayton, VIC, 3800, Australia
- ARC Centre for Future Low Energy Electronics Technologies, Monash University, Clayton, VIC, 3800, Australia
- Department of Materials Science and Engineering, Monash University, Clayton, VIC, 3800, Australia
| | - Chi Xuan Trang
- School of Physics and Astronomy, Monash University, Clayton, VIC, 3800, Australia
- ARC Centre for Future Low Energy Electronics Technologies, Monash University, Clayton, VIC, 3800, Australia
| | - Weikang Wu
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore, 487372, Singapore
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Jinwoong Hwang
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - David Cortie
- Australian Nuclear Science and Technology Organization, Lucas Heights, NSW, 2234, Australia
- Institute for Superconductivity and Electronic Materials, University of Wollongong, Wollongong, NSW, 2522, Australia
| | - Nikhil Medhekar
- ARC Centre for Future Low Energy Electronics Technologies, Monash University, Clayton, VIC, 3800, Australia
- Department of Materials Science and Engineering, Monash University, Clayton, VIC, 3800, Australia
| | - Sung-Kwan Mo
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Shengyuan A Yang
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore, 487372, Singapore
| | - Mark T Edmonds
- School of Physics and Astronomy, Monash University, Clayton, VIC, 3800, Australia
- ARC Centre for Future Low Energy Electronics Technologies, Monash University, Clayton, VIC, 3800, Australia
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Lee WY, Park NW, Kang MS, Kim GS, Yoon YG, Lee S, Choi KY, Kim KS, Kim JH, Seong MJ, Kikkawa T, Saitoh E, Lee SK. Extrinsic Surface Magnetic Anisotropy Contribution in Pt/Y 3Fe 5O 12 Interface in Longitudinal Spin Seebeck Effect by Graphene Interlayer. ACS Appl Mater Interfaces 2021; 13:45097-45104. [PMID: 34496563 DOI: 10.1021/acsami.1c13180] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
A recent study found that magnetization curves for Y3Fe5O12 (YIG) slab and thick films (>20 μm thick) differed from bulk system curves by their longitudinal spin Seebeck effect in a Pt/YIG bilayer system. The deviation was due to intrinsic YIG surface magnetic anisotropy, which is difficult to adopt extrinsic surface magnetic anisotropy even when in contact with other materials on the YIG surface. This study experimentally demonstrates evidence for extrinsic YIG surface magnetic anisotropy when in contact with a diamagnetic graphene interlayer by observing the spin Seebeck effect, directly proving intrinsic YIG surface magnetic anisotropy interruption. We show the Pt/YIG bilayer system graphene interlayer role using large area single and multilayered graphenes using the longitudinal spin Seebeck effect at room temperature, and address the presence of surface magnetic anisotropy due to magnetic proximity between graphene and YIG layer. These findings suggest a promising route to understand new physics of spin Seebeck effect in spin transport.
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Affiliation(s)
- Won-Yong Lee
- Department of Physics, Chung-Ang University, Seoul 06974, Republic of Korea
| | - No-Won Park
- Department of Physics, Chung-Ang University, Seoul 06974, Republic of Korea
| | - Min-Sung Kang
- Department of Physics, Chung-Ang University, Seoul 06974, Republic of Korea
| | - Gil-Sung Kim
- Department of Physics, Chung-Ang University, Seoul 06974, Republic of Korea
| | - Young-Gui Yoon
- Department of Physics, Chung-Ang University, Seoul 06974, Republic of Korea
| | - Suheon Lee
- Deopartment of Physics, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Kwang-Yong Choi
- Deopartment of Physics, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Keun Soo Kim
- Department of Physics and Astronomy, Sejong University, Seoul 05006, Republic of Korea
| | - Jin-Hyuk Kim
- Department of Physics, Chung-Ang University, Seoul 06974, Republic of Korea
| | - Maeng-Je Seong
- Department of Physics, Chung-Ang University, Seoul 06974, Republic of Korea
| | - Takashi Kikkawa
- Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan
| | - Eiji Saitoh
- Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan
- WPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
- Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
| | - Sang-Kwon Lee
- Department of Physics, Chung-Ang University, Seoul 06974, Republic of Korea
- WPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
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Liu Y, Luchini A, Martí-Sánchez S, Koch C, Schuwalow S, Khan SA, Stankevič T, Francoual S, Mardegan JRL, Krieger JA, Strocov VN, Stahn J, Vaz CAF, Ramakrishnan M, Staub U, Lefmann K, Aeppli G, Arbiol J, Krogstrup P. Coherent Epitaxial Semiconductor-Ferromagnetic Insulator InAs/EuS Interfaces: Band Alignment and Magnetic Structure. ACS Appl Mater Interfaces 2020; 12:8780-8787. [PMID: 31877013 DOI: 10.1021/acsami.9b15034] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Hybrid semiconductor-ferromagnetic insulator heterostructures are interesting due to their tunable electronic transport, self-sustained stray field, and local proximitized magnetic exchange. In this work, we present lattice-matched hybrid epitaxy of semiconductor-ferromagnetic insulator InAs/EuS heterostructures and analyze the atomic-scale structure and their electronic and magnetic characteristics. The Fermi level at the InAs/EuS interface is found to be close to the InAs conduction band and in the band gap of EuS, thus preserving the semiconducting properties. Both neutron and X-ray reflectivity measurements show that the overall ferromagnetic component is mainly localized in the EuS thin film with a suppression of the Eu moment in the EuS layer nearest the InAs and magnetic moments outside the detection limits on the pure InAs side. This work presents a step toward realizing defect-free semiconductor-ferromagnetic insulator epitaxial hybrids for spin-lifted quantum and spintronic applications without external magnetic fields.
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Affiliation(s)
- Yu Liu
- Microsoft Quantum Materials Lab Copenhagen , 2800 Lyngby , Denmark
| | | | - Sara Martí-Sánchez
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST , Campus UAB, Bellaterra , 08193 Barcelona , Catalonia , Spain
| | - Christian Koch
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST , Campus UAB, Bellaterra , 08193 Barcelona , Catalonia , Spain
| | - Sergej Schuwalow
- Microsoft Quantum Materials Lab Copenhagen , 2800 Lyngby , Denmark
| | - Sabbir A Khan
- Microsoft Quantum Materials Lab Copenhagen , 2800 Lyngby , Denmark
| | - Tomaš Stankevič
- Microsoft Quantum Materials Lab Copenhagen , 2800 Lyngby , Denmark
| | - Sonia Francoual
- Deutsches Elektronen-Synchrotron DESY , Hamburg 22603 , Germany
| | | | | | | | - Jochen Stahn
- Paul Scherrer Institute , CH-5232 Villigen , Switzerland
| | - Carlos A F Vaz
- Paul Scherrer Institute , CH-5232 Villigen , Switzerland
| | | | - Urs Staub
- Paul Scherrer Institute , CH-5232 Villigen , Switzerland
| | | | - Gabriel Aeppli
- Paul Scherrer Institute , CH-5232 Villigen , Switzerland
- ETH , CH-8093 Zürich , Switzerland
- EPFL , CH-1015 Lausanne , Switzerland
| | - Jordi Arbiol
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST , Campus UAB, Bellaterra , 08193 Barcelona , Catalonia , Spain
- ICREA , Pg. Lluís Companys 23 , 08010 Barcelona , Catalonia , Spain
| | - Peter Krogstrup
- Microsoft Quantum Materials Lab Copenhagen , 2800 Lyngby , Denmark
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