Large thermoelectric transport in magnetically coupled CrI3/1T-MoS2 vdW heterostructure via spin-charge interconversion

Low-dimensional materials with prominent thermoelectric (TE) effect play a pivotal role in realizing state-of-the-art nanoscale TE devices. The fusion of TE effect with the magnetism through seamless integration of thermoelectric and magnetic materials in the 2D limit offers access to control longitudinal as well as transverse TE properties via magnetic proximity effect (MPE). Herein, we design a vdW heterostructure of metallic 1T-MoS2 with promising TE properties and a layer-dependent magnetic CrI3 material. The result highlights exotic electronic and magnetic configurations of the designed ML-CrI3/1T-MoS2 vdW heterostructure, which show magnetically-coupled TE characteristics. The observed remarkable magnetic proximity stems from large magnetic anisotropy energy and spin polarization, which are found to be 2.21 meV/Cr and 12.30%, respectively. To this end, the semiconducting CrI3 layer with intrinsic magnetism leads to efficient control and tunability of the observed spin-correlated anomalous Nernst effect (ANE). Moreover, a large dimensionless Figure of merit of ~ 6 and a power factor of ~ 3.8×10^11/τ_° Wm^(-1) K^(-2) s^(-1) near the Fermi level at 300K endorse the rejuvenated TE effect. The strong relativistic spin-orbit coupling validates the significant correlation of TE properties with intrinsic magnetic configuration. The present study underscores the significance of the magnetic proximity-governed TE effect in vdW heterostructures to engineer low-dimensional thermoelectric (TE) devices. .

Combining linear-scaling quantum transport and machine-learning molecular dynamics to study thermal and electronic transports in complex materials

We propose an efficient approach for simultaneous prediction of thermal and electronic transport properties in complex materials. Firstly, a highly efficient machine-learned neuroevolution potential (NEP) is trained using reference data from quantum-mechanical density-functional theory calculations. This trained potential is then applied in large-scale molecular dynamics simulations, enabling the generation of realistic structures and accurate characterization of thermal transport properties. In addition, molecular dynamics simulations of atoms and linear-scaling quantum transport calculations of electrons are coupled to account for the electron-phonon scattering and other disorders that affect the charge carriers governing the electronic transport properties. We demonstrate the usefulness of this unified approach by studying electronic transport in pristine graphene and thermoelectric transport properties of a graphene antidot lattice, with a general-purpose NEP developed for carbon systems based on an extensive dataset.

Unveiling the temperature-dependent thermoelectric properties of the undoped and Na-doped monolayer SnSe allotropes: a comparative study

Motivated by the excellent thermoelectric (TE) performance of bulk SnSe, extensive attention has been drawn to the TE properties of the monolayer SnSe. To uncover the fundamental mechanism of manipulating the TE performance of the SnSe monolayer, we perform a systematic study on the TE properties of five monolayer SnSe allotropes such asα-,β-,γ-,δ-, andε-SnSe based on the density functional theory and the non-equilibrium Green's functions. By comparing the TE properties of the Na-doped SnSe allotropes with the undoped ones, the influences of the Na doping and the temperature on the TE properties are deeply investigated. It is shown that the figure of meritZTwill increase as the temperature increases, which is the same for almost all the Na-doped and undoped cases. The Na doping can enhance or suppress theZTin different SnSe allotropes at different temperatures, implying the presence of the anomalous suppression of theZT. The Na doping inducedZTsuppression may be caused basically by the sharp decrease of the power factor and the weak decrease of the electronic thermal conductance, rather than by the decrease of the phononic thermal conductance. We hope this work will be able to enrich the understanding of the manipulation of TE properties by means of dimensions, structurization, doping, and temperature.

Layer-dependent excellent thermoelectric materials: from monolayer to trilayer tellurium based on DFT calculation

Monoelemental two-dimensional (2D) materials, which are superior to binary and ternary 2D materials, currently attract remarkable interest due to their fascinating properties. Though the thermal and thermoelectric (TE) transport properties of tellurium have been studied in recent years, there is little research about the thermal and TE properties of multilayer tellurium with interlayer interaction force. Herein, the layer modulation of the phonon transport and TE performance of monolayer, bilayer, and trilayer tellurium is investigated by first-principles calcuations. First, it was found that thermal conductivity as a function of layer numbers possesses a robust, unusually non-monotonic behavior. Moreover, the anisotropy of the thermal transport properties of tellurium is weakened with the increase in the number of layers. By phonon-level systematic analysis, we found that the variation of phonon transport under the layer of increment was determined by increasing the phonon velocity in specific phonon modes. Then, the TE transport properties showed that the maximum figure of merit (ZT) reaches 6.3 (p-type) along the armchair direction at 700 K for the monolayer and 6.6 (p-type) along the zigzag direction at 700 K for the bilayer, suggesting that the TE properties of the monolayer are highly anisotropic. This study reveals that monolayer and bilayer tellurium have tremendous opportunities as candidates in TE applications. Moreover, further increasing the layer number to 3 hinders the improvement of TE performance for 2D tellurium.

Boosting Thermoelectric Power Factor of Carbon Nanotube Networks with Excluded Volume by Co-Embedded Microparticles

Carbon nanotube (CNT) networks embedded in a polymer matrix have been extensively studied as a flexible thermoelectric transport medium over the recent years. However, their power factor has been largely limited by the relatively inefficient tunneling transport at junctions between CNTs and the low-density conducting channels throughout the networks. This work demonstrates that significant power factor enhancements can be achieved by adding electrically insulating microscale particles in three-dimensional CNT networks embedded in the polymer matrix. When silica particles of a few μm diameters were co-embedded in single-walled CNT (SWCNT)-polydimethylsiloxane (PDMS) composites, both the electrical conductivity and the Seebeck coefficient were simultaneously enhanced, thereby boosting the power factor by more than a factor of six. We found that the silica microparticles excluded a large volume of the composite from the access of CNTs and caused CNT networks to form around them with the polymer as a binder, resulting in improved network connectivity and alignment of CNTs. Our theoretical calculations based on junction tunneling transport for three-dimensional CNT networks show that the significant power factor enhancement can be attributed to the enhanced tunneling with reduced junction distance between CNTs. Additional power factor enhancement by a factor of three was achieved by sample compression, which further reduced the mean junction distance to enhance tunneling but also reduced the geometric factor at the same time, limiting the enhancement of electrical conductivity.

Spin-dependent thermoelectric transport properties of Cr-doped blue phosphorene

We systematically investigate the thermoelectric properties of the Cr-doped blue phosphorene (blue-P) along the armchair and zigzag directions. First, we find the semiconducting band structure of the blue-P will become spin-polarized due to the Cr-doping, and can be seriously changed by the doping concentration. Then we show the Seebeck coefficient, the electric conductance, the electron thermal conductance, and the figure of meritsZTs are all dependent on the transport directions and doping concentration. However, two pairs of the peaks of the charge and spinZTs can be always observed with the low-height (high-height) pair on the side of the negative (positive) Fermi energy. In addition, at temperature 300 K the extrema of the charge (spin)ZTs of the blue-P along the two directions are kept to be larger than 22 (90) for the different doping concentrations and will be further enhanced at lower temperature. Therefore, we believe the Cr-doped blue-P should be a versatile high-performance thermoelectric material which may be used in the fields of the thermorelectrics and spin caloritronics.

Recent progress of two-dimensional heterostructures for thermoelectric applications

The rapid development of synthesis and fabrication techniques has opened up a research upsurge in two-dimensional (2D) material heterostructures, which have received extensive attention due to their superior physical and chemical properties. Currently, thermoelectric energy conversion is an effective means to deal with the energy crisis and increasingly serious environmental pollution. Therefore, an in-depth understanding of thermoelectric transport properties in 2D heterostructures is crucial for the development of micro-nano energy devices. In this review, the recent progress of 2D heterostructures for thermoelectric applications is summarized in detail. Firstly, we systematically introduce diverse theoretical simulations and experimental measurements of the thermoelectric properties of 2D heterostructures. Then, the thermoelectric applications and performance regulation of several common 2D materials, as well as in-plane heterostructures and van der Waals heterostructures, are also discussed. Finally, the challenges of improving the thermoelectric performance of 2D heterostructures materials are summarized, and related prospects are described.

Thermoelectric transport in two-terminal topological nodal-line semimetals nanowires

Recently discovered topological nodal-line semimetals (TNLSMs) have received considerable research interest due to their rich physical properties and potential applications. TNLSMs have the particular band structure to lead to many novel properties. Here we theoretically study the thermoelectric transport of a two-terminal pristine TNLSM nanowires and TNLSMsp-n-pjunctions. The Seebeck coefficientsS_cand the thermoelectrical figure of meritZTare calculated based on the Landauer-Büttiker formula combined with the nonequilibrium Green's function method. In pristine TNLSM nanowires, we discuss the effect of the magnetic fieldsφ, the disorderD, the on-site energyµ_z, and the mass termmon the thermoelectric coefficient and find that the transport gap can lead to a largeS_candZT. When transmission coefficient jumps from one integer plateau to another,S_candZTshow a series of peaks. The peaks ofS_candZTare determined by the jump of the transmission coefficient plateau and are not associated with the plateau itself. For TNLSMsp-n-pjunctions,S_candZTstrongly depend on the parameterξof potential well. We can get a largeZTby adjusting the parameterξand magnetic fieldφ. In TNLSMsp-n-pjunctions,ZThas the large value and is easily regulated. This setup has promising application prospects as a thermoelectric device.

Berry curvature induced magnetotransport in 3D noncentrosymmetric metals

We study the magnetoelectric and magnetothermal transport properties of noncentrosymmetric metals using semiclassical Boltzmann transport formalism by incorporating the effects of Berry curvature (BC) and orbital magnetic moment (OMM). These effects impart quadratic-Bdependence to the magnetoelectric and magnetothermal conductivities, leading to intriguing phenomena such as planar Hall effect, negative magnetoresistance (MR), planar Nernst effect and negative Seebeck effect. The transport coefficients associated with these effects show the usual oscillatory behavior with respect to the angle between the applied electric field and magnetic field. The bands of noncentrosymmetric metals are split by Rashba spin-orbit coupling except at a band touching point (BTP). For Fermi energy below (above) the BTP, giant (diminished) negative MR is observed. This difference in the nature of MR is related to the magnitudes of the velocities, BC and OMM on the respective Fermi surfaces, where the OMM plays the dominant role. The absolute MR and planar Hall conductivity show a decreasing (increasing) trend with Rashba coupling parameter for Fermi energy below (above) the BTP.

Charge and Thermoelectric Transport in Polymer-Sorted Semiconducting Single-Walled Carbon Nanotube Networks

Understanding the charge transport mechanisms in chirality-selected single-walled carbon nanotube (SWCNT) networks and the influence of network parameters is essential for further advances of their optoelectronic and thermoelectric applications. Here, we report on charge density and temperature-dependent field-effect mobility and on-chip field-effect-modulated Seebeck coefficient measurements of polymer-sorted monochiral small-diameter (6,5) (0.76 nm) and mixed large-diameter SWCNT (1.17-1.55 nm) networks (plasma torch nanotubes, RN) with different network densities and length distributions. All untreated networks display balanced ambipolar transport and electron-hole symmetric Seebeck coefficients. We show that charge and thermoelectric transport in SWCNT networks can be modeled by the Boltzmann transport formalism, incorporating transport in heterogeneous media and fluctuation-induced tunneling. Considering the diameter-dependent one-dimensional density of states (DoS) of the SWCNTs composing the network, we can simulate the charge density and temperature-dependent Seebeck coefficients. Our simulations suggest that scattering in these networks cannot be described as simple one-dimensional acoustic and optical phonon scattering as for single SWCNTs. Instead the relaxation time is inversely proportional to energy (τ ∝ (E - E_C)^s, s = -1, E_C being the energy of the first van Hove singularity), presumably pointing toward the more two-dimensional character of scattering events and the necessity to include scattering at the SWCNT junctions. Finally, our observation of higher power factors in trap-free, 1,2,4,5-tetrakis(tetramethylguanidino)benzene-treated (6,5) networks than in the RN networks emphasizes the importance of chirality selection to tune the width of the DoS. To benefit from both higher intrinsic mobilities and a large thermally accessible DoS, we propose trap-free, narrow DoS distribution, large-diameter SWCNT networks for both electronic and thermoelectric applications.

Thermoelectric Inversion in a Resonant Quantum Dot-Cavity System in the Steady-State Regime

We theoretically investigate thermoelectric effects in a quantum dot system under the influence of a linearly polarized photon field confined to a 3D cavity. A temperature gradient is applied to the system via two electron reservoirs that are connected to each end of the quantum dot system. The thermoelectric current in the steady state is explored using a quantum master equation. In the presence of the quantized photons, extra channels, the photon replica states, are formed generating a photon-induced thermoelectric current. We observe that the photon replica states contribute to the transport irrespective of the direction of the thermal gradient. In the off-resonance regime, when the energy difference between the lowest states of the quantum dot system is smaller than the photon energy, the thermoelectric current is almost blocked and a plateau is seen in the thermoelectric current for strong electron–photon coupling strength. In the resonant regime, an inversion of thermoelectric current emerges due to the Rabi-splitting. Therefore, the photon field can change both the magnitude and the sign of the thermoelectric current induced by the temperature gradient in the absence of a voltage bias between the leads.

All Electrical Access to Topological Transport Features in Mn1.8PtSn Films

The presence of nontrivial magnetic topology can give rise to nonvanishing scalar spin chirality and consequently a topological Hall or Nernst effect. In turn, topological transport signals can serve as indicators for topological spin structures. This is particularly important in thin films or nanopatterned materials where the spin structure is not readily accessible. Conventionally, the topological response is determined by combining magnetotransport data with an independent magnetometry experiment. This approach is prone to introduce measurement artifacts. In this study, we report the observation of large topological Hall and Nernst effects in micropatterned thin films of Mn_1.8PtSn below the spin reorientation temperature T_SR ≈ 190 K. The magnitude of the topological Hall effect ρ _xy^T = 8 nΩm is close to the value reported in bulk Mn₂PtSn, and the topological Nernst effect S _xy^T = 115 nV K^-1 measured in the same microstructure has a similar magnitude as reported for bulk MnGe ( S _xy^T ∼ 150 nV K^-1), the only other material where a topological Nernst was reported. We use our data as a model system to introduce a topological quantity, which allows one to detect the presence of topological transport effects without the need for independent magnetometry data. Our approach thus enables the study of topological transport also in nanopatterned materials without detrimental magnetization related limitations.

Resistivity bound for hydrodynamic bad metals

We obtain a rigorous upper bound on the resistivity [Formula: see text] of an electron fluid whose electronic mean free path is short compared with the scale of spatial inhomogeneities. When such a hydrodynamic electron fluid supports a nonthermal diffusion process-such as an imbalance mode between different bands-we show that the resistivity bound becomes [Formula: see text] The coefficient [Formula: see text] is independent of temperature and inhomogeneity lengthscale, and [Formula: see text] is a microscopic momentum-preserving scattering rate. In this way, we obtain a unified mechanism-without umklapp-for [Formula: see text] in a Fermi liquid and the crossover to [Formula: see text] in quantum critical regimes. This behavior is widely observed in transition metal oxides, organic metals, pnictides, and heavy fermion compounds and has presented a long-standing challenge to transport theory. Our hydrodynamic bound allows phonon contributions to diffusion constants, including thermal diffusion, to directly affect the electrical resistivity.